Page 1
1 - 6
© 2000 IXYS All rights reserved
C (TAB)
G = Gate, C = Collector,
E = Emitter, TAB = Collector
G
C
E
TO-247 AD
95567B (7/00)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BV
CES
IC= 750 mA, VGE = 0 V 600 V
V
GE(th)
IC= 250 mA, VCE = V
GE
2.5 5.5 V
I
CES
VCE= 0.8 • V
CES
TJ = 25°C 500 mA
VGE= 0 V TJ = 125°C8mA
I
GES
VCE= 0 V, VGE = ±20 V ±100 nA
V
CE(sat)
IC= I
C90
, VGE = 15 V 2.5 V
Symbol Test Conditions Maximum Ratings
V
CES
TJ= 25°C to 150°C 600 V
V
CGR
TJ= 25°C to 150°C; RGE = 1 MW 600 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
TC= 25°C60A
I
C90
TC= 90°C32A
I
CM
TC= 25°C, 1 ms 120 A
SSOA V
GE
= 15 V, TVJ = 125°C, RG = 33 W ICM = 64 A
(RBSOA) Clamped inductive load, L = 100 mH @ 0.8 V
CES
P
C
TC= 25°C 200 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
Maximum Lead and Tab temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
M
d
Mounting torque, TO-247 AD 1.13/10 Nm/lb.in.
Weight TO-247 AD 6 g
IXGH32N60BU1 V
CES
= 600 V
I
C25
= 60 A
V
CE(sat)
= 2.5V
t
fi
= 80 ns
HiPerFASTTM IGBT
with Diode
Features
• International standard package
JEDEC TO-247 AD
• High frequency IGBT and antiparallel
FRED in one package
• High current handling capability
• Newest generation HDMOSTM process
• MOS Gate turn-on
- drive simplicity
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
Advantages
• Space savings (two devices in one
package)
• High power density
• Very fast switching speeds for high
frequency applications
IXYS reserves the right to change limits, test conditions, and dimensions.
Page 2
2 - 6
© 2000 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
fs
IC= I
C90
; VCE = 10 V, 15 20 S
Pulse test, t £ 300 ms, duty cycle £ 2 %
C
ies
2500 pF
C
oes
VCE = 25 V, VGE = 0 V, f = 1 MHz 270 pF
C
res
70 pF
Q
g
125 150 nC
Q
ge
IC = I
C90
, VGE = 15 V, VCE = 0.5 V
CES
23 35 nC
Q
gc
50 75 nC
t
d(on)
25 ns
t
ri
30 ns
t
d(off)
100 200 ns
t
fi
80 150 ns
E
off
0.8 1.6 mJ
t
d(on)
25 ns
t
ri
35 ns
E
on
1mJ
t
d(off)
120 ns
t
fi
120 ns
E
off
1.4 mJ
R
thJC
0.62 K/W
R
thCK
0.25 K/W
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
V
F
IF = I
C90
, VGE = 0 V, 1.6 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
I
RM
IF = I
C90
, VGE = 0 V, -diF/dt = 240 A/ms1015A
t
rr
VR = 360 V TJ = 125°C 150 ns
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V TJ =25°C35 50ns
R
thJC
1K/W
Inductive load, TJ = 25°C
IC = I
C90
, VGE = 15 V, L = 100 mH,
VCE = 0.8 V
CES
, RG = R
off
= 4.7 W
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 • V
CES
,
higher TJ or increased R
G
Inductive load, TJ = 125°C
IC = I
C90
, VGE = 15 V, L = 100 mH
VCE = 0.8 V
CES
, RG = R
off
= 4.7 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • V
CES
,
higher TJ or increased R
G
IXGH32N60BU1
TO-247 AD (IXGH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Page 3
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© 2000 IXYS All rights reserved
TJ - Degrees C
-50 -25 0 25 50 75 100 125 150
B
V/V
GE(th)
- Normalized
0.70
0.75
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
TJ - Degrees C
25 50 75 100 125 150
V
CE (sat)
- Normalized
0.75
1.00
1.25
1.50
1.75
VCE - Volts
01234567
I
C
- Amperes
0
20
40
60
80
100
VGE - Volts
345678910
I
C
- Amperes
0
20
40
60
80
100
VCE - Volts
0246810
I
C
- Amperes
0
40
80
120
160
200
13V
11V
9V
7V
V
CE
= 10V
VGE = 15V
13V
11V
9V
7V
TJ = 25°C
VGE = 15V
TJ = 25°C
IC = 16A
I
C
= 32A
I
C
= 64A
T
J
= 125°C
V
GE(th)
IC
= 250µA
BV
CES
IC = 250µA
5V
5V
VGE = 15V
TJ = 25°C
VCE - Volts
01234567
I
C
- Amperes
0
20
40
60
80
100
TJ = 125°C
IXGH32N60BU1
Fig. 6. Temperature Dependence of BV
DSS
& V
GE(th)
Fig. 5. Admittance Curves
Fig. 3. Saturation Voltage Characteristics Fig. 4. Temperature Dependence of V
CE(sat)
Fig. 1. Saturation Voltage Characteristics
Fig. 2. Extended Output Characteristics
Page 4
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© 2000 IXYS All rights reserved
Pulse Width - Seconds
0.00001 0.0001 0.001 0.01 0.1 1
Z
thJC
(K/W)
0.001
0.01
0.1
1
D=0.2
VCE - Volts
0 100 200 300 400 500 600
I
C
- Amperes
0.1
1
10
100
Qg - nanocoulombs
0 25 50 75 100 125 150
V
GE
- Volts
0
3
6
9
12
15
RG - Ohms
0 102030405060
E
(OFF)
- millijoules
0
1
2
3
4
5
E
(ON)
- millijoules
0.0
0.5
1.0
1.5
2.0
2.5
TJ = 125°C
IC - Amp e re s
0 20406080
E
(OFF)
- milliJoules
0
1
2
3
4
5
E
(ON)
- millijoules
0.0
0.5
1.0
1.5
2.0
2.5
V
CE
= 300V
I
C
= 32A
I
C
= 32A
E
(ON)
E
(OFF)
E
(ON)
E
(OFF)
TJ = 125°C
RG = 4.7
W
dV/dt < 5V/ns
D=0.5
D=0.1
D=0.05
D=0.02
D=0.01
Single pulse
D = Duty Cycle
RG = 10
W
TJ = 125°C
IXGH32N60BU1
Fig. 11. Transient Thermal Resistance
Fig. 10. Turn-off Safe Operating Area
Fig. 9. Gate Charge
Fig. 8. Dependence of tfi and E
OFF
on RG.
Fig. 7. Dependence of tfi and E
OFF
on IC.
Page 5
5 - 6
© 2000 IXYS All rights reserved
IXGH32N60BU1
diF /dt - A/µs
0 200 400 600
t
rr
- nanoseconds
0.0
0.2
0.4
0.6
0.8
diF /dt - A/µs
200 400 600
I
RM
- Amperes
0
10
20
30
40
diF /dt - A/µs
1 10 100 1000
Q
r
- nanocoulombs
0
1
2
3
4
TJ - Degrees C
0 40 80 120 160
Normalized I
RM
/Q
r
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Q
r
I
RM
diF /dt - A/µs
0 100 200 300 400 500 600
t
fr
- nanoseconds
0
200
400
600
800
1000
V
FR
- Volts
0
5
10
15
20
25
t
fr
V
FR
Voltage Drop - Volts
0.5 1.0 1.5 2.0 2.5
Current - Amperes
0
20
40
60
80
100
TJ = 150°C
T
J
= 100°C
T
J
= 25°C
TJ = 125°C
I
F
= 37A
typ.
I
F
= 60A
I
F
= 30A
I
F
= 15A
IF = 30A
T
J
= 100°C
V
R
= 350V
T
J
= 100°C
V
R
= 350V
T
J
= 100°C
V
R
= 350V
typ.
I
F
= 60A
I
F
= 30A
I
F
= 15A
max.
IF = 30A
max.
IF = 30A
typ.
I
F
= 60A
I
F
= 30A
I
F
= 15A
max.
Fig.14 Junction Temperature Dependence Fig.15 Reverse Recovery Chargee
off IRM and Q
r
Fig.16 Peak Reverse Recovery Current Fig.17 Reverse Recovery Time
Fig.12 Maximum Forward Voltage Drop Fig.13 Peak Forward Voltage VFR and
Forward Recovery Time t
FR
microcoulombs
Page 6
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© 2000 IXYS All rights reserved
Pulse Width - Seconds
0.001 0.01 0.1 1
R
thJC
- K/W
0.01
0.10
1.00
Fig.18 Diode Transient Thermal resistance junction to case
IXGH32N60BU1
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