Datasheet ixgn200n60b3 Datasheet

GenX3TM 600V IGBT

Medium-Speed Low-Vsat PT IGBT for 5-40kHz Switching

IXGN200N60B3

V

CES

I

C110

V

CE(sat)

= 600V = 200A

≤≤

≤ 1.50V

≤≤

SOT-227B, miniBLOC

E153432

Symbol Test Conditions Maximum Ratings

V

I

C25

I

C110

I

LRMS

I

CM

CES

CGR

GES

GEM

T

= 25°C to 150°C 600 V

J

TJ = 25°C to 150°C, RGE = 1MΩ 600 V

Continuous ±20 V

Transient ±30 V

TC= 25°C 300 A TC= 110°C 200 A Terminal Current Limit 200 A TC= 25°C, 1ms 1200 A

SSOA VGE= 15V, TVJ = 125°C, RG = 1Ω ICM = 300 A

(RBSOA) Clamped Inductive Load VCE ≤ V

P

C

T

J

T

JM

T

stg

V

ISOL

M

d

Terminal Connection Torque (M4) 1.3/11.5 Nm/lb.in.

TC= 25°C 830 W

- 55 ... +150 °C

150 °C

- 55 ... +150 °C

50/60Hz t = 1min 2500 V~ I

≤ 1mA t = 1s 3000 V~

ISOL

Mounting Torque 1.5/13 Nm/lb.in.

CES

Weight 30 g

Symbol Test Conditions Characteristic Values (TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

V

I

GE(th)

CES

IC= 250μA, VCE = V

VCE= V

, VGE = 0V 50 μA

CES

3.0 5.0 V

GE

TJ = 125°C 5 mA

I

V

GES

CE(sat)

VCE= 0V, VGE = ±20V ±100 nA

IC= 100A, VGE = 15V, Note 1 1.35 1.50 V IC= 200A, 1.65 V

TJ = 125°C 1.75 V

E c

G

E c

C

G = Gate, C = Collector, E = Emitter c Either Emitter Terminal can be used as

Main or Kelvin Emitter

Features

z

International Standard Package miniBLOC

z

UL Recognized

z

Aluminium Nitride Isolation

- High Power Dissipation

z

Isolation Voltage 3000 V~

z

Very High Current IGBT

z

Low V

for Minimum on-state

CE(sat)

Conduction Losses

z

MOS Gate Turn-On

- Drive Simplicity

z

Low Collector-to-Case Capacitance (< 50 pF)

z

Low Package Inductance (< 5 nH)

- Easy to Drive and to Protect

Advantages

z

High Power Density

z

Low Gate Drive Requirement

Applications

• Switch-Mode and Resonant-Mode

Power Supplies

• Uninterruptible Power Supplies (UPS)

• DC Choppers

• AC Motor Speed Drives

• DC Servo and Robot Drives

DS99941B(8/09)

IXGN200N60B3

Symbol Test Conditions Characteristic Values (TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

g

fs

C

ies

C

oes

C

res

Q

g(on)

Q

ge

Q

gc

t

d(on)

t

ri

E

on

t

d(off)

t

183 300 ns

fi

E

off

t

d(on)

t

ri

E

on

t

430 ns

d(off)

tfi 300 ns

E

4.2 mJ

off

R

thJC

R

thCK

IC= 60A, VCE = 10 V, Note 1 95 160 S

26 nF

VCE = 25 V, VGE = 0 V, f = 1 MHz 1260 pF

97 pF

750 nC

IC = 100V, VGE = 15 V, VCE = 0.5 • V

CES

115 nC

245 nC

44 ns

Inductive load, TJ = 25°C

I

= 100A, VGE = 15V

C

= 300V, RG = 1Ω

V

CE

83 ns

1.6 mJ

310 450 ns

2.9 4.5 mJ

42 ns

Inductive load, TJ = 125°C

I

= 100A, VGE = 15V

C

V

= 300V, RG = 1Ω

CE

2.4 mJ

80 ns

0.15 °C/W

0.05 °C/W

SOT-227B miniBLOC

Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

IXGN200N60B3

V

A

Fig. 1. Ou tp u t C h ar acter i sti cs

= 25ºC

@ T

200

160

120

- Amperes

C

80

I

40

0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1. 4 1.6 1.8 2.0

J

V

= 15V

GE

11V

9V

7V

6V

5V

VCE - Volts

Fig. 3. Ou tp u t C h ar acter i sti cs

=125ºC

@ T

200

160

120

- Amperes

80

C

I

40

0

0.0 0.2 0.4 0.6 0. 8 1. 0 1.2 1.4 1. 6 1. 8 2.0

J

VCE - Volts

V

= 15V

GE

13 11V

Fig. 2. Extended Output Characteristics

= 25ºC

@ T

350

V

= 15V

GE

11V

9V

50

0

01234567 89

Amperes

-

C

I

300

250

200

150

100

J

7V

6V

5V

VCE - Volts

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

1.25

V

1.20

- Normalized

CE(sat)

V

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

9V

7V

5V

= 15V

GE

I C = 200A

I C = 150A

I C = 100A

-50 -25 0 25 50 75 100 125 150

TJ - Degrees Ce ntigr ade

Fig. 5. C o l l ecto r -to -Emi tter Vo l tag e

vs. Gate-to-Emitter Vol tag e

3.4

3.0

2.6

2.2

- Volts

CE

V

1.8

1.4

1.0 56789101112131415

I

= 200

C

150A

100

VGE - Volts

TJ = 25ºC

Fig. 6. Input Admittance

160

140

120

100

80

Amperes

-

C

I

60

40

20

0

3.5 4.0 4.5 5.0 5.5 6.0 6.5

TJ = 125ºC

25ºC

- 40ºC

VGE - Volts

IXGN200N60B3

Fig. 7. Transconductance

240

200

160

Siemens

120

-

f s

g

80

40

0

0 20 40 60 80 100 120 140 160 180 200

T

= - 40ºC

J

IC - Amperes

25ºC

125ºC

Fig. 9. Capacitance

100,000

C

10,000

1,000

100

Capacitance - PicoFarads

= 1 MHz

f

10

0 5 10 15 20 25 30 35 40

VCE - Volts

ies

C

oes

C

res

Fig. 8. Gate Charge

16

V

= 300V

CE

14

12

10

- Volts

GE

V

= 100A

I

C

I

= 10mA

G

8

6

4

2

0

0 100 200 300 400 500 600 700 800

QG - NanoC oulombs

Fig. 10. R ever se-B i as Safe Op er ati n g Area

350

300

250

200

150

- Amperes

C

I

100

T

= 125ºC

J

= 1

R

50

0

G

dv / dt < 10V / ns

100 200 300 400 500 600

VCE - Volts

Fig. 11. Maximum Transient Thermal Impedance

1.000

0.100

- ºC / W

(th)JC

Z

0.010

0.001

0.0001 0.001 0.01 0.1 1 10

Pulse Width - Sec onds

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGN200N60B3

(

)

(

)

Fig. 12. In d u ctive Switchi n g

Energy Loss vs. Gate R es i stance

4.5

4.0

3.5

E

3.0

- MilliJoules

off

E

2.5

2.0

1.5

off

TJ = 125ºC , VGE = 15V

= 300V

V

CE

12345678910

on

- - - -

I C = 100A

I C = 50A

RG - Ohms

Fig. 14. Inductive Switching

Energy Loss vs. Junction Tem perature

4.5

E

off

4.0 RG = 1

= 300V

V

CE

3.5

3.0

2.5

- MilliJoules

off

2.0

E

1.5

1.0

0.5

25 35 45 55 65 75 85 95 105 115 125

- - - -

on

VGE = 15V

,

TJ - Degrees Centigrade

I C = 100A

I C = 50A

3.5

3.0

2.5

2.0

1.5

1.0

0.5

2.7

2.4

2.1

1.8

1.5

1.2

0.9

0.6

0.3

Fig. 13. Inductive Switching

Energy Loss vs. Collector Current

5.0

 ,

- - - -

on

VGE = 15V

TJ = 125ºC

TJ = 25ºC

E

off

4.5 RG = 1

4.0 V

= 300V

CE

E

on

- MilliJo ules

3.5

3.0

2.5

- MilliJoules

2.0

off

E

1.5

1.0

0.5

0.0

50 55 60 65 70 75 80 85 90 95 100

IC - Amperes

3.0

2.7

2.4

2.1

1.8

1.5

1.2

0.9

0.6

0.3

0.0

E

on

- MilliJoules

Fig. 15. Inductive Turn-off

Switchin g Times vs. Gate R esi sta n ce

330

t

320

310

300

E

on

290

- MilliJo ules

280

270

- Nanoseconds

f i

t

260

250

240

230

f i

TJ = 125ºC,

= 300V

V

CE

I C = 100A

12345678910

t

d(off)

= 15V

V

GE

I C = 50A

- - - -

RG - Ohms

1300

1200

1100

1000

900

800

700

600

500

400

300

t

d off

- Nanoseconds

Fig. 16. Inductive Turn-off

Switchin g Tim es vs. Collector C urren t

320

300

280

260

240

220

200

- Nanoseconds

f i

t

180

160

140

120

t

f i

RG = 1 , VGE = 15V

V

= 300V

CE

50 55 60 65 70 75 80 85 90 95 100

t

d(off)

- - - -

IC - Amperes

TJ = 125ºC

T

= 25ºC

J

500

480

460

440

420

400

380

360

340

320

300

Switchin g Tim es vs. Juncti o n Te mp er ature

360

t

320

t

d(off)

- Nanoseconds

280

240

- Nanoseconds

f i

200

t

160

120

RG = 1, VGE = 15V

V

I C = 50A, 100A

25 35 45 55 65 75 85 95 105 115 125

Fig. 17. Inductive Turn-off

f i

= 300V

CE

t

- - - -

d(off)

TJ - Degrees Centigrade

520

480

t

d off

440

- Nanoseconds

400

360

320

280

IXGN200N60B3

( )

(

)

Fig. 18. Inductive Turn-on

Switching Tim es vs. Gate Resistan ce

150

t

r i

130

TJ = 125ºC, VGE = 15V

= 300V

V

CE

110

90

- Nanoseconds

70

r i

t

50

30

12345678910

t

d(on)

- - - -

I C = 100A

I C = 50A

RG - Ohms

Fig. 20. Inductive Turn-on

Switching Times vs. Ju n cti o n Temperatu re

90

80

I C = 100A

70

60

- Nanoseconds

r i

50

t

40

t

r i

RG = 1 , VGE = 15V

V

= 300V

CE

t

d(on)

- - - -

I C = 50A

140

120

100

80

60

40

20

Fig. 19. Inductive Turn-on

Switching Ti mes vs. Collector Current

90

t

r i

80

RG = 1 , VGE = 15V

t

d on

V

70

= 300V

CE

t

d(on)

- - - -

- Nanoseconds

60

TJ = 25ºC, 125ºC

- Nanoseconds

r i

50

t

40

30

50 55 60 65 70 75 80 85 90 95 100

IC - Amperes

48

46

t

d(on)

44

- Nanoseconds

42

40

38

48

46

t

d on

44

- Nanoseconds

42

40

38

36

30

25 35 45 55 65 75 85 95 105 115 125

36

TJ - Degrees Centigrade

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS REF: G_200N60B3(97)3-28-08-A