Page 1
IGBT
Optimized for Switching
up to 5 kHz
IXGN 200N60A2 V
I
V
CES
C25
CE(sat)
= 600 V
= 200 A
= 1.35 V
Preliminary Data Sheet
E
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA V
(RBSOA) Clamped inductive load @ 0.8 V
P
C
T
J
T
JM
T
stg
V
ISOL
M
d
TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 1 MΩ 600 V
Continuous ±20 V
Transient ±30 V
TC= 25°C 200 A
TC= 110°C 100 A
TC= 25°C, 1 ms 400 A
= 15 V, TVJ = 125°C, RG = 2.0 Ω ICM = 200 A
GE
CES
TC= 25°C 700 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
50/60 Hz t = 1 min 2500 V~
I
≤ 1 mA t = 1 s 3000 V~
ISOL
Mounting torque 1.5/13 Nm/lb.in.
Terminal connection torque (M4) 1.5/13 Nm/lb.in.
Weight 30 g
SOT-227B, miniBLOC
E c
G
E c
C
G = Gate, C = Collector, E = Emitter
c either emitter terminal can be used as
Main or Kelvin Emitter
Features
z
International standard package
miniBLOC
z
Aluminium nitride isolation
- high power dissipation
z
Isolation voltage 3000 V~
z
Very high current IGBT
z
Low V
conduction losses
z
MOS Gate turn-on
- drive simplicity
z
Low collector-to-case capacitance
(< 50 pF)
z
Low package inductance (< 5 nH)
for minimum on-state
CE(sat)
- easy to drive and to protect
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
V
GE(th)
I
CES
I
GES
V
CE(sat)
© 2003 IXYS All rights reserved
IC= 1 mA, VCE = V
VCE= V
VGE= 0 V TJ = 125°C2mA
CES
VCE= 0 V, VGE = ±20 V ±400 nA
IC= I
, VGE = 15 V 1.2 1.35 V
C110
J
GE
TJ = 25°C50µA
min. typ. max.
2.5 5.5 V
Applications
z
AC motor speed control
z
DC servo and robot drives
z
DC choppers
z
Uninterruptible power supplies (UPS)
z
Switch-mode and resonant-mode
power supplies
Advantages
z
Easy to mount with 2 screws
z
Space savings
z
High power density
DS99087A(11/03)
Page 2
IXGN 200N60A2
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
J
g
fs
IC= 60 A; VCE = 10 V, 70 106 S
min. typ. max.
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
ies
oes
res
g
ge
gc
d(on)
ri
d(off)
fi
off
d(on)
ri
on
d(off)
fi
off
VCE = 25 V, VGE = 0 V, f = 1 MHz 740 pF
IC = I
Inductive load, TJ = 25
IC = I
VCE = 0.8 V
Inductive load, TJ = 125
IC = I
VCE = 0.8 V
, VGE = 15 V, VCE = 0.5 V
C110
, VGE = 15 V
C110
C110
, RG = R
CES
, VGE = 15 V
, RG = R
CES
°°
°C
°°
= 2.0 Ω
off
°°
°C
°°
= 2.4 Ω
off
CES
9900 pF
190 pF
480 nC
63 nC
169 nC
60 ns
45 ns
360 ns
250 ns
5mJ
60 ns
60 ns
3.0 m J
290 ns
660 ns
12 mJ
SOT-227B miniBLOC
R
thJC
R
thCK
0.05 K/W
0.17 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Page 3
IXGN 200N60A2
Fig. 1. Output Characte r is tics
@ 25 Deg. C
200
175
150
125
100
- Amperes
C
75
I
50
25
0
0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25
V
= 15V
GE
13V
11V
V
- Volts
C E
Fig. 3. Output Characte r is tics
@ 125 Deg. C
200
V
= 15V
175
150
GE
13V
11V
9V
5V
7V
9V
7V
Fig. 2. Exte nded Output Characte ris tics
@ 25 deg. C
350
300
250
200
150
- Amperes
C
I
100
50
0
0 0.5 1 1.5 2 2.5 3 3.5 4
V
= 15V
GE
13V
11V
V
- Volts
C E
Fig. 4. Depende nce of V
9V
7V
5V
CE(sat)
Tem pe rature
1.4
1.3
1.2
VGE = 15V
IC = 200A
on
125
100
- Amperes
C
75
I
50
25
0
0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25
VCE - Volts
Fig. 5. Collector -to-Em itter Voltage
vs. Gate -to-Em iiter Voltage
3.0
T
2.8
2.6
2.4
2.2
2.0
- Volts
C E
1.8
V
1.6
1.4
1.2
1.0
567891011121314151617
V
- Volts
G E
= 25ºC
J
IC = 200A
100A
50A
5V
1.1
1.0
- Normalized
0.9
C E (s at)
V
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
IC = 100A
IC = 50A
TJ - Degrees Centigrade
Fig. 6. Input Adm ittance
350
300
250
200
150
- Amperes
C
I
100
50
0
TJ = 125ºC
25ºC
-40ºC
4 4.5 5 5.5 6 6.5 7 7.5 8
V
- Volts
G E
© 2003 IXYS All rights reserved
Page 4
IXGN 200N60A2
Fig. 7. Transconductance
200
180
160
TJ = -40ºC
25ºC
140
125ºC
120
100
- Siemens
80
f s
g
60
40
20
0
0 50 100 150 200 250 300 350
I C - Amperes
Fig. 9. Depende nce of E
30
RG = 2.4 Ω
= 15V
V
25
20
15
- MilliJoules
off
E
10
5
0
GE
= 480V
V
CE
TJ = 125ºC
50 75 100 125 150 175 200
off
TJ = 25ºC
I C - Amperes
on I
Fig. 8. Depende nce of E
35
30
25
TJ = 125ºC
V
= 15V
20
15
- milliJoules
off
E
10
5
0
GE
= 480V
V
CE
0 5 10 15 20 25
on R
off
IC = 200A
IC = 100A
IC = 50A
G
R G - Ohms
c
30
25
20
15
- milliJoules
off
10
E
5
0
Fig. 10. Dependence of E
Tem perature
RG = 2.4 Ω
= 15V
V
GE
= 480V
V
CE
25 35 45 55 65 75 85 95 105 115 125
IC = 200A
IC = 100A
IC = 50A
off
on
TJ - Degrees Centigrade
Fig. 11. Gate Char ge
15
V
= 300V
CE
= 100A
I
12
9
- Volts
6
G E
V
3
0
C
= 10m A
I
G
0 50 100 150 200 250 300 350 400 450 500
Q G - nanoCoulombs
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
100000
10000
1000
Capacitance - p F
100
Fig. 12. Capacitance
f = 1 MHz
C
ies
C
oes
C
res
0 5 10 15 20 25 30 35 40
V
- Volts
C E
Page 5
0.18
0.16
0.14
0.12
0.1
(ºC/W)
-
0.08
(th) J C
R
0.06
0.04
0.02
IXGN 200N60A2
Fig. 13. Maximum Transient Thermal Resistance
0
1 10 100 1000
Pulse Width - millis econds
© 2003 IXYS All rights reserved
Loading...