Page 1
Preliminary Technical Information
High Voltage IGBT IXGN100N170
E
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA VGE= 15V, TVJ = 125°C, RG = 1Ω ICM = 200 A
(RBSOA) Clamped inductive load @ 0.8 • V
t
sc
(SCSOA) RG = 10Ω, non repetitive
P
C
T
J
T
JM
T
stg
V
ISOL
M
d
Terminal connection torque (M4) 1.3/11.5 Nm/lb.in.
Weight 30 g
T
= 25°C to 150°C 1700 V
J
TJ = 25°C to 150°C, RGE = 1MΩ 1700 V
Continuous ±20 V
Transient ±30 V
TC= 25°C 160 A
TC= 90°C 95 A
TC= 25°C, 1ms 600 A
CES
VGE= 15V, VCE = 1250V, TJ = 125°C 10 μs
TC= 25°C 735 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
50/60Hz t = 1min 2500 V~
I
≤ 1mA t = 1s 3000 V~
ISOL
Mounting torque 1.5/13 Nm/lb.in.
V
CES
I
C90
V
CE(sat)
= 1700V
= 95A
≤≤
≤ 3.0V
≤≤
SOT-227B, miniBLOC
E153432
E c
G
E c
C
G = Gate, C = Collector, E = Emitter
c either emitter terminal can be used as
Main or Kelvin Emitter
Features
z
Optimized for low conduction and
switching losses
z
Square RBSOA
z
Isolation voltage 3000 V~
z
High current handling capability
z
International standard package
Advantages
z
High power density
z
Low gate drive requirement
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BV
V
I
CES
CES
GE(th)
IC= 3mA, V
IC= 8mA, VCE = V
VCE= V
CES
= 0V 1700 V
GE
GE
3.0 5.0 V
50 μA
VGE = 0V TJ = 125°C 5 mA
I
GES
V
CE(sat)
© 2008 IXYS CORPORATION, All rights reserved
VCE= 0V, VGE = ±20V ±200 nA
IC= 100A, VGE = 15V, Note 1 2.5 3.0 V
Applications
z
Power Inverters
z
UPS
z
Motor Drives
z
SMPS
z
PFC Circuits
z
Welding Machines
DS100091(12/08)
Page 2
IXGN100N170
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
g
fs
C
ies
C
oes
C
res
Q
g(on)
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
tfi 395 ns
t
d(on)
t
ri
t
285 ns
d(off)
tfi 435 ns
R
thJC
R
thCK
IC = 60A, VCE = 10V, Note 1 36 64 S
9220 pF
VCE = 25V, VGE = 0 V, f = 1MHz 455 pF
150 pF
425 nC
IC = 100A, VGE = 15V, VCE = 0.5 • V
CES
65 nC
186 nC
Resistive load, TJ = 25
I
= 100A, VGE = 15V
C
= 0.5 • V
V
CE
, RG = 1Ω
CES
Resistive load, TJ = 125
= 100A, VGE = 15V
I
C
V
= 0.5 • V
CE
, RG = 1Ω
CES
°°
°C
°°
°°
°C
°°
35 ns
192 ns
285 ns
35 ns
250 ns
0.17 °C/W
0.05 °C/W
SOT-227B miniBLOC (IXGN)
Note: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Page 3
IXGN100N170
Fig. 1. Ou tp u t C h ar acteristics
@ 25ºC
200
180
160
140
120
100
- Amperes
80
C
I
60
40
20
0
0.00.51.01.5 2.02.53.03.54.0
VCE - Volts
V
= 15V
GE
13V
11V
9V
7V
5V
Fig. 3. Ou tp u t C h aracteristi cs
@ 125ºC
200
180
160
140
120
100
- Amperes
80
C
I
60
40
20
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4. 0 4.5 5.0
VCE - Volts
V
= 15V
GE
13V
11V
Fig. 2. Extended Output Characteristics
@ 25ºC
350
300
250
200
Amper es
150
-
C
I
100
50
0
012345678910
V
= 15V
GE
13V
11V
9V
7V
5V
VCE - Volts
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
2.0
V
= 15V
1.8
9V
7V
5V
1.6
1.4
- Normalized
1.2
CE(sat )
V
1.0
0.8
0.6
GE
I C =200A
I C = 100A
I C = 50A
-50 -25 0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 5. Collecto r -to -Emitter Vo l tag e
vs. Gate-to-Emitter Vol tage
6.5
6.0
5.5
5.0
I
= 200A
4.5
4.0
- Volts
CE
V
3.5
3.0
2.5
2.0
1.5
50A
56789101112131415
100A
C
VGE - Volts
© 2008 IXYS CORPORATION, All rights reserved
TJ = 25ºC
Fig. 6. Input Admittance
180
160
140
120
100
Amperes
80
-
C
I
60
40
20
0
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
TJ = - 40ºC
25ºC
125ºC
VGE - Volts
Page 4
IXGN100N170
Fig. 7. Transconductance
110
T
= - 40ºC
100
90
80
70
60
Siemens
50
-
f s
40
g
30
20
10
0
0 20 40 60 80 100 120 140 160 180 200
J
25ºC
125ºC
IC - Amperes
Fig. 9. R e ver se-B ias Safe Operati n g Ar ea
700
600
500
400
Fig. 8. Gate Charge
16
V
= 850V
14
12
10
- Volts
GE
V
CE
= 100A
I
C
= 10mA
I
G
8
6
4
2
0
0 50 100 150 200 250 300 350 400 450
QG - NanoCoulombs
Fig. 10. Capacitance
100,000
= 1 MHz
f
C
10,000
ies
300
- Amperes
C
I
200
T
= 125ºC
J
= 1Ω
R
100
G
dV / dt < 10V / ns
0
200 400 600 800 1000 1200 1400 1600 1800
VCE - Volts
1,000
Capacitance - PicoFarads
100
0 5 10 15 20 25 30 35 40
C
res
VCE - Volts
C
oes
Fig. 11. Maxim u m Transient Thermal Imped an ce
1.000
0.100
- ºC / W
(th)JC
Z
0.010
0.001
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Se conds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: G_100N170(9P)12-10-08
Page 5
IXGN100N170
Fig. 12. R esi st iv e Turn -o n R i se Time
vs. Junction Tem perature
320
R
= 1Ω
280
240
200
160
- Nanoseconds
r
t
120
80
40
G
V
= 15V
GE
V
= 850V
CE
I C = 100A
I C = 50A
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 14. Resistive Turn-on Switching Times
vs. Gate Resista n ce
450
t
400
TJ = 125ºC, VGE = 15V
V
350
300
250
200
- Nanoseconds
r
t
150
100
r
= 850V
CE
t
- - - -
)
d(on
I C = 100A
I C = 50A
Fig. 13. Resi stive Turn-o n R ise Time
vs. Col l ecto r C u r r e n t
320
R
= 1Ω
280
240
200
160
- Nanoseconds
r
t
120
80
40
G
= 15V
V
GE
V
= 850V
CE
50 55 60 65 70 75 80 85 90 95 100
TJ = 125ºC
TJ = 25ºC
IC - Amperes
Fig. 15. R esisti ve Turn-off Switch in g Times
vs. Junction Tem perature
65
60
t
55
d(on)
- Nanoseconds
50
45
40
35
30
1000
900
800
700
600
500
- Nanoseconds
f
t
400
300
t
f
RG = 1Ω, VGE = 15V
V
CE
t
d(off)
= 850V
- - - -
I C = 50A
I C = 100A
400
380
360
340
320
300
280
260
t
d(off)
- Nanoseconds
50
12345678910
RG - Ohms
Fig. 16. R esi sti ve Turn-o ff Switch i n g Times
vs. Col l ecto r C u r r e n t
1000
t
900
800
700
600
500
- Nanoseconds
f
t
400
300
200
TJ = 25ºC
50 55 60 65 70 75 80 85 90 95 100
f
RG = 1Ω, VGE = 15V
V
= 850V
CE
TJ = 125ºC
IC - Amperes
© 2008 IXYS CORPORATION, All rights reserved
t
d(off
- - - -
)
420
400
380
360
340
320
300
280
260
25
200
25 35 45 55 65 75 85 95 105 115 125
240
TJ - Degre es Centigra de
Fig. 17. R esisti ve Turn-off Switch in g Times
vs. Gate Resistance
1100
t
1000
t
d(off )
- Nanoseconds
900
800
700
600
- Nanoseconds
f
t
500
400
300
f
TJ = 125ºC, VGE = 15V
= 850V
V
CE
I C = 50A
12345678910
t
d(off
- - - -
)
I C = 100A
RG - Ohms
900
800
t
700
d(off )
- Nanoseconds
600
500
400
300
200
100
IXYS REF: G_100N170(9P)12-10-08
Loading...