
Advance Technical Data
HiPerFASTTM IGBT
IXGH 34N60B2
Optimized for 10-25 KHz hard
switching and up to 150 KHz
resonant switching
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA V
(RBSOA) Clamped inductive load @ ≤ 600 V
P
C
T
J
T
JM
T
stg
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
M
d
Weight TO-247 AD 6 g
TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 1 MΩ 600 V
Continuous ±20 V
Transient ±30 V
TC= 25°C (limited by leads) 70 A
TC= 110°C34A
TC= 25°C, 1 ms 15 0 A
= 15 V, TVJ = 125°C, RG = 10 Ω ICM = 60 A
GE
TC= 25°C 190 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
Mounting torque (M3) 1.13/10Nm/lb.in.
TO-268 SMD 4 g
V
CES
I
C25
V
CE(sat)
t
fi typ
= 600 V
= 70 A
< 1.55 V
= 150 ns
TO-247 AD
(IXGH)
G
C
E
G = Gate, C = Collector,
E = Emitter, TAB = Collector
Features
z
Medium frequency IGBT
z
Square RBSOA
z
High current handling capability
z
MOS Gate turn-on
- drive simplicity
Applications
C (TAB)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
GE(th)
I
CES
I
GES
V
CE(sat)
© 2005 IXYS All rights reserved
IC= 250 µA, VCE = V
VCE= V
VGE= 0 V TJ = 150°C1mA
CES
GE
TJ = 25°C50µA
2.5 5.0 V
VCE= 0 V, VGE = ±20 V ±100 nA
IC= 24 A, VGE = 15 V TJ = 25°C 1.55 V
z
PFC circuits
z
Uninterruptible power supplies (UPS)
z
Switched-mode and resonant-mode
power supplies
z
AC motor speed control
z
DC servo and robot drives
z
DC choppers
DS99345(02/05)

IXGH 34N60B2
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
fs
ies
oes
res
g
ge
gc
d(on)
ri
d(off)
fi
off
d(on)
ri
on
d(off)
fi
off
thJC
thCK
J
IC= 24 A; VCE = 10 V, 18 26 S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz 115 pF
IC = 24 A, VGE = 15 V, VCE = 300 V 9 nC
Inductive load, TJ = 25
°°
°C
°°
IC = 24 A, VGE = 15 V
VCE = 400 V, RG = 5 Ω
Inductive load, TJ = 125
°°
°C
°°
IC = 24 A, VGE = 15 V
VCE = 400 V, RG = 5 Ω
(TO-247) 0.25 K/W
min. typ. max.
1500 pF
40 pF
66 nC
22 nC
13 ns
15 ns
150 300 ns
150 250 ns
0.64 1.2 mJ
13 ns
17 ns
0.22 mJ
300 ns
250 ns
1.2 mJ
0.65 K/W
TO-247 AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
2.2 2.54 .087 .102
A
1
2.2 2.6 .059 .098
A
2
b 1.0 1.4 .040 .055
b
1.65 2.13 .065 .084
1
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
∅ P
e
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2