Page 1
HiPerFASTTM IGBT
IXGA 12N60C
IXGP 12N60C
I
V
V
CES
C25
CE(sat)
t
fi(typ)
= 600 V
=24 A
= 2.7 V
=55 ns
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA V
(RBSOA) Clamped inductive load, L = 300 µH @ 0.8 V
P
C
T
J
T
JM
T
stg
M
d
Weight 4g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 1 MΩ 600 V
Continuous ±20 V
Transient ±30 V
TC= 25°C24A
TC= 90°C12A
TC= 25°C, 1 ms 48 A
= 15 V, TVJ = 125°C, RG = 33 Ω ICM = 24 A
GE
CES
TC= 25°C 100 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
Mounting torque with screw M3 0.45/4 Nm/lb.in.
Mounting torque with screw M3.5 0.55/5 Nm/lb.in.
TO-263 AA (IXGA)
TO-220 AB
(IXGP)
Features
•Very high freqency IGBT
•New generation HDMOS
•International standard package
JEDEC TO-220AB and TO-263AA
•High peak current handling capability
G
E
G
C
E
G = Gate C = Collector
E = Emitter TAB = Collector
↑ C (tab)
TM
process
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
© 2002 IXYS All rights reserved
IC= 250 µA, VGE = 0 V 600 V
IC= 250 µA, VGE = V
VCE = 0.8, V
VGE= 0 V TJ = 125°C1mA
VCE= 0 V, VGE = ±20 V ±100 nA
IC= I
CES
, VGE = 15 2.1 2.7 V
CE90
GE
TJ = 25°C 200 µA
2.5 5.0 V
Applications
• PFC circuits
• AC motor speed control
• DC servo & robot drives
• Switch-mode and resonant-mode
power supplies
• High power audio amplifiers
Advantages
• Fast switching speed
• High power density
97534B (2/02)
Page 2
IXGA12N60C IXGP12N60C
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified) Min. Typ. Max.
(T
J
g
fs
IC= I
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
; VCE = 10 V, 7 11 S
C90
TO-220 AB Dimensions
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
ies
oes
res
g
ge
gc
d(on)
ri
d(off)
fi
off
d(on)
ri
on
d(off)
fi
off
860 pF
VCE = 25 V, VGE = 0 V, f = 1 MHz 64 pF
15 pF
32 nC
IC= I
, VGE = 15 V, VCE = 0.5 V
C90
CES
10 nC
10 nC
Inductive load, TJ = 25
= I
I
C
VCE= 0.8 V
, VGE = 15 V, L = 300 µH
C90
, RG = R
CES
°°
°C
°°
= 18 Ω
off
Remarks: Switching times may
increase for V
higher T
(Clamp) > 0.8 V
CE
or increased R
J
G
CES
,
20 n s
20 n s
60 n s
55 n s
0.09 mJ
20 n s
Inductive load, TJ = 125
IC= I
V
CE
, VGE = 15 V, L = 300 µH
C90
= 0.8 V
, RG = R
CES
Remarks: Switching times may
increase for V
higher T
(Clamp) > 0.8 V
CE
or increased R
J
°°
°C
°°
= 18 Ω
off
G
CES
20 n s
0.15 mJ
85 180 ns
,
85 180 ns
0.27 0.60 m J
Pins: 1 - Gate 2 - Collector
3 - Emitter 4 - Collector
Bottom Side
TO-263 AA Outline
R
thJC
R
thCK
Min. Recommended Footprint
(Dimensions in inches and mm)
1.25 K/W
0.25 K/W
1. Gate
2. Collector
3. Emitter
4. Collector
Bottom Side
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BS C .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Page 3
IXGA12N60C IXGP12N60C
50
TJ = 25°C
VGE = 15V
13V
11V
40
30
20
- Amperes
C
I
10
0
9V
7V
5V
0246810
VCE - Volts
Fig. 1. Saturation Voltage Characteristics
50
TJ = 125°C
40
30
20
- Amperes
C
I
10
0
0246810
VGE = 15V
13V
11V
VCE - Volts
100
TJ = 25°C
80
60
40
- Amperes
C
I
20
0
VGE = 15V
13V
11V
9V
7V
5V
0 4 8 12 16 20
VCE - Volts
Fig. 2. Extended Output Characteristics
1.75
VGE = 15V
1.50
1.25
9V
- Normalized
1.00
7V
5V
CE (sat)
V
0.75
0.50
25 50 75 100 125 150
TJ - Degrees C
I
= 24A
C
= 12A
I
C
IC = 6A
Fig. 3. Saturation Voltage Characteristics
30
25
20
15
- Amperes
C
I
10
= 10V
V
CE
T
= 125°C
J
5
TJ = 25°C
0
345678910
VGE - Volts
Fig. 5. Saturation Voltage Characteristics
© 2002 IXYS All rights reserved
Fig. 4. Temperature Dependence of V
C
iss
C
oss
C
rss
Capacitance - pF
1000
100
10
1
0 5 10 15 20 25 30 35 40
VCE-Volts
Fig. 6. Junction Capacitance Curves
CE(sat)
f = 1Mhz
Page 4
IXGA12N60C IXGP12N60C
1.5
TJ = 125°C
RG = 10Ω
- millijoules
E
(ON)
1.0
0.5
E
(ON)
E
(OFF)
0.0
0 5 10 15 20 25
IC - Amperes
Fig. 7. Dependence of EON and E
16
12
8
- Volts
GE
V
4
V
I
C
CE
= 12A
= 300V
OFF
on IC.
3
E
(OFF)
2
- milliJoules
1
0
1.5
TJ = 125°C
IC =24A
1.0
E
(ON)
E
0.5
(ON)
E
(ON)
- millijoules
(ON)
E
I
C
I
C
= 12A
= 6A
0.0
3
E
(OFF)
2
E
(OFF)
E
(OFF)
E
(OFF)
- millijoules
1
0
0 102030405060
RG - Ohms
Fig. 8. Dependence of E
and E
ON
on RG.
OFF
100
24
TJ = 125°C
RG = 4.7Ω
dV/dt < 5V/ns
- Amperes
C
I
10
1
0
0 1020304050
Qg - nanocoulombs
Fig. 9. Gate Charge
1
D=0.5
D=0.2
D=0.1
0.1
D=0.05
(K/W)
D=0.02
D=0.01
thJC
Z
0.01
Single puls e
D = Duty Cycle
0.1
0 100 200 300 400 500 600
VCE - Volts
Fig. 10. Turn-off Safe Operating Area
0.001
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Seco n ds
Fig. 11. Transient Thermal Resistance
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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