Page 1
查询IXFH26N50P供应商
PolarHV
TM
Power MOSFET
IXFH 26N50P
IXFV 26N50P
IXFV 26N50PS
Avalanche Rated
Fast Instrinsic Diode
Preliminary Data Sheet
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
TJ= 25°C to 150°C 500 V
TJ= 25°C to 150°C; RGS = 1 MΩ 500 V
Continuos ± 30 V
Transient ± 40 V
TC= 25°C26A
TC= 25°C, pulse width limited by T
TC= 25°C26A
TC= 25°C40mJ
TC= 25°C 1.0 J
JM
78 A
V
DSS
I
D25
R
DS(on)
t
rr
TO-247 (IXFH)
PLUS220 (IXFV)
= 500 V
=26A
≤≤
≤ 230 m
≤≤
≤≤
≤ 200 ns
≤≤
D (TAB)
ΩΩ
Ω
ΩΩ
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
M
d
F
C
Weight TO-3P 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
TJ≤ 150°C, RG = 4 Ω
TC= 25°C 400 W
1.6 mm (0.062 in.) from case for 10 s 300 °C
Plastic body 260 °C
Mounting torque (TO-247) 1.13/10 Nm/lb.in.
Mounting force (PLUS220SMD) 11..65/2.5..15 N/lb
PLUS220 & PLUS220SMD 5 g
VGS= 0 V, ID = 250 µA 500 V
VDS= VGS, ID = 4 mA 3.0 5.0 V
VGS= ±30 VDC, VDS = 0 ±100 nA
VDS= V
VGS= 0 V TJ = 125°C 250 µA
VGS= 10 V, ID = 0.5 I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
DSS
D25
, 10 V/ns
DSS
-55 ... +150 °C
150 °C
-55 ... +150 °C
25 µA
230 mΩ
G
D
S
PLUS220SMD (IXFV_S)
G
S
G = Gate D = Drain
S = Source TAB = Drain
Features
z
International standard packages
z
Fast intrinsic diode
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
Advantages
z
Easy to mount
z
Space savings
z
High power density
D (TAB)
D (TAB)
© 2005 IXYS All rights reserved
DS99276A(09/05)
Page 2
IXFH 26N50P
L3L1E1
E
L
A
AE1D1
L3L2L1A1E1eD1
L4
E
A
L
c
A2L4A
IXFV 26N50P
IXFV 26N50PS
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 20 V; ID = 0.5 I
VGS = 0 V, VDS = 25 V, f = 1 MHz 370 pF
VGS= 10 V, VDS = 0.5 I
RG= 4 Ω (External) 58 ns
VGS= 10 V, VDS = 0.5 V
, pulse test 16 26 S
D25
3600 pF
57 pF
20 ns
D25
25 ns
20 ns
60 nC
, ID = 0.5 I
DSS
D25
20 nC
25 nC
0.31 K/W
0.21 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
VGS = 0 V 26 A
Repetitive 104 A
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
TO-247 AD (IXFH) Outline
1 2 3
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
2.2 2.54 .087 .102
1
A
2.2 2.6 .059 .098
2
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BS C
PLUS220 (IXFV) Outline
L2
E1
A1
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
t
rr
Q
RM
IF = 25A, -di/dt = 100 A/µs 300 ns
VR = 100V 3.3 µC
1
PLUS220SMD (IXFV_S) Outline
L2
E1
1
Terminals: 1 - Gate 2 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
L
2X b
e
3 - Source TAB - Drain
A1
D
L3
E1
A
A2
3
A3
b
c
D
E
L
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463
2X e
A
A1
A2
b
c
D
D1
E
e
L
L2
D
L3
L
c
3X b
Terminals: 1 - Gate 2 - Drain
2
3 - Source TAB - Drain
Page 3
IXFH 26N50P
d
d
IXFV 26N50P
IXFV 26N50PS
Fig. 1. Output Characte ristics
@ 25ºC
30
V
= 10V
GS
27
24
21
18
15
- Amperes
12
D
I
9
6
3
0
012345678
7V
6V
V
- Volts
D S
5.5V
5V
4.5V
Fig. 3. Output Characte ristics
@ 125ºC
30
V
= 10V
GS
27
24
21
18
15
- Amperes
12
D
I
9
6
3
0
0 2 4 6 8 101214161820
7V
6V
V
- Volts
D S
5.5V
5V
4.5V
Fig. 2. Extended Output Characteristics
@ 25ºC
60
V
= 10V
GS
50
40
30
- Amperes
D
20
I
10
0
0 3 6 9 12 15 18 21 24 27 30
Fig . 4. R
V
- Volts
D S
Normalized to 0.5 I
DS(on
)
7V
6V
5.5V
5V
Value vs . Junction Tem per atur e
3.1
2.8
2.5
2.2
1.9
- Normalize
1.6
1.3
D S ( o n )
R
0.7
0.4
VGS = 10V
I
= 26A
D
I
= 13A
D
1
-50 -25 0 25 50 75 100 125 150
T
- Degrees Centigrade
J
D25
Fig . 5. R
0.5 I
3.4
VGS = 10V
3
2.6
2.2
- Normalize
1.8
1.4
D S ( o n )
R
1
0.6
0 5 10 15 20 25 30 35 40 45 50 55 60
Norm alize d to
DS(on)
Value vs. I
D25
T
I D - A mperes
= 125∫C
J
T
D
= 25∫C
J
Fig. 6. Drain Curre nt vs. Cas e
Tem pe rature
27
24
21
18
15
12
- Amperes
D
I
9
6
3
0
-50 -25 0 25 50 75 100 125 150
T
- Degrees Centigrade
C
© 2005 IXYS All rights reserved
Page 4
Fig. 7. Input Adm ittance
IXFH 26N50P
Fig. 8. Transconductance
IXFV 26N50P
IXFV 26N50PS
40
35
30
25
20
- Amperes
D
15
I
10
TJ = 125∫C
25∫C
-40∫C
5
0
3.5 4 4.5 5 5.5 6 6.5
V
- Volts
G S
Fig. 9. Source Curr ent vs.
Source-To-Drain Voltage
70
60
50
40
30
- Amperes
S
I
T
= 125∫ C
J
20
10
0
0.4 0. 5 0.6 0.7 0.8 0.9 1
T
= 25∫C
J
V
- Volts
S D
55
50
45
TJ = -40 ∫C
25∫C
40
125∫ C
35
30
25
- Siemens
f s
20
g
15
10
5
0
0 5 10 15 20 25 30 35 40 45
I
- Amperes
D
Fig. 10. Gate Charge
10
V
DS
I
D
I
G
= 250V
= 13A
= 10mA
9
8
7
6
5
- Volts
G S
4
V
3
2
1
0
0 1020 30405060 708090100
Q G - nanoCoulombs
Fig. 11. Capacitance
10000
C
iss
1000
C
oss
100
Capacitance - picoFarads
C
f = 1MHz
10
0 5 10 15 20 25 30 35 40
V
D S
- Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
rss
Fig. 12. Forw ard-Bias
Safe Operating Area
100
R
Limit
DS(on)
10
- Amperes
D
I
V
DC
D S
- Volts
TJ = 150∫C
= 25∫C
T
C
1
10 100 1000
25µs
100µs
1ms
10ms
Page 5
IXFH 26N50P
IXFV 26N50PS
Fig. 13. Maxim um Tr ans ient Ther mal Res istance
1.00
C / W
∫
-
0.10
( t h ) J C
R
0.01
0.1 1 10 100 1000
Pulse Width - milliseconds
IXFV 26N50P
© 2005 IXYS All rights reserved
Loading...