Page 1
HiPerFET
TM
V
DSS
I
D25
R
DS(on)
Power MOSFET s
IXFH/IXFT 24N50Q 500 V 24 A 0.23
IXFH/IXFT 26N50Q 500 V 26 A 0.20
Q-Class
t
N-Channel Enhancement Mode
Avalanche Rated, Low Q
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight TO-247 6 g
Symbol Test Conditions Characteristic Values
V
DSS
T
= 25°C to 150°C 500 V
J
T
= 25°C to 150°C; RGS = 1 MΩ 500 V
J
Continuous ±20 V
Transient ±30 V
T
= 25°C 24N50 24 A
C
T
= 25°C, Note 1 24N50 96 A
C
T
= 25°C 24N50 24 A
C
T
= 25°C 30 mJ
C
T
= 25°C 1.5 J
C
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
T
≤ 150°C, RG = 2 Ω
J
T
= 25°C 300 W
C
-55 ... +150 °C
150 °C
-55 ... +150 °C
1.6 mm (0.063 in) from case for 10 s 300 °C
Mounting torque 1.13/10 Nm/lb.in.
TO-268 4 g
VGS= 0 V, I
= 250 µA 500 V
D
High dv/dt
g,
26N50 26 A
26N50 104 A
26N50 26 A
, 5 V/ns
DSS
(T
= 25°C, unless otherwise specified)
J
min. typ. max.
≤ ≤
≤ 250 ns
≤ ≤
rr
TO-247 AD (IXFH)
TO-268 (D3) (IXFT) Case Style
G
S
G = Gate, D = Drain,
S = Source, TAB = Drain
Features
l
IXYS advanced low Qg process
l
International standard packages
l
Low R
l
DS (on)
Unclamped Inductive Switching (UIS)
rated
l
Fast switching
l
Molding epoxies meet UL 94 V-0
flammability classification
ΩΩ
Ω
ΩΩ
ΩΩ
Ω
ΩΩ
(TAB)
(TAB)
V
GS(th)
I
GSS
I
DSS
R
DS(on)
© 2001 IXYS All rights reserved
VDS= VGS, ID = 4 mA 2.5 4.5 V
V
= ±20 V
GS
VDS= V
VGS= 0 V T
DSS
VGS= 10 V, ID = 0.5 I
Note 2 26N50Q 0.20 Ω
, V
= 0 ±100 nA
DC
DS
T
= 25°C25µA
J
= 125°C1mA
J
D25
24N50Q 0.23 Ω
Advantages
l
Easy to mount
l
Space savings
l
High power density
98512G (5/01)
Page 2
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
J
min. typ. max.
IXFH 24N50Q IXFT 24N50Q
IXFH 26N50Q IXFT 26N50Q
TO-247 AD Outline
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 10 V; ID = 0.5 I
, Note 2 14 24 S
D25
3900 pF
VGS= 0 V, VDS = 25 V, f = 1 MHz 500 pF
130 pF
28 ns
VGS= 10 V, VDS = 0.5 V
R
= 2 Ω (External), 55 n s
G
, ID = 0.5 I
DSS
D25
30 ns
16 ns
95 nC
VGS= 10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
D25
27 nC
40 nC
0.42 K/W
(TO-247) 0.25 K/W
Source-Drain Diode Characteristic Values
(T
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
VGS= 0 V 24N50Q 24 A
J
26N50Q 26 A
1 2 3
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
2.2 2.54 .087 .102
1
2.2 2.6 .059 .098
A
2
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-268 Outline
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
I
SM
V
SD
t
rr
Q
RM
I
RM
Note 1. Pulse width limited by T
2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Repetitive; Note1 24N50Q 96 A
IF = IS, VGS = 0 V, 1. 3 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IF = I
, -di/dt = 100 A/µs, VR = 100 V 0.85 µC
S
JM
Min Recommended Footprint
26N50Q 104 A
250 ns
8A
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A
2.7 2.9 .106 .114
1
A2.02 .25 .001 .010
b 1.15 1.45 .045 .057
1.9 2.1 .75 .83
b
2
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E
13.3 13.6 .524 .535
1
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Page 3
IXFH 24N50Q IXFT 24N50Q
IXFH 26N50Q IXFT 26N50Q
60
TJ = 25OC
50
VGS=10V
9V
8V
7V
40
30
- Amperes
D
20
I
10
0
0 4 8 12 16 20
VDS - Volts
6V
5V
50
40
T
= 125OC
J
VGS=10V
9V
8V
7V
30
20
- Amp er es
D
I
10
0
048121620
VDS - Volts
6V
5V
Fig.1 Output Characteristics @ Tj = 25°C Fig.2 Output Characteristics @ Tj = 125°C
- Normalized
R
2.8
V
= 10V
GS
2.4
2.0
TJ = 125oC
1.6
DS(ON)
TJ = 25oC
1.2
- Normalized
R
2.4
= 10V
V
GS
2.0
ID = 26A
1.6
DS(ON)
1.2
ID = 13A
0.8
0 102030405060
ID - Amperes
Fig.3 R
v s. Dr ai n C urr en t Fig.4 Temperature Dependence of Drain
DS(on)
0.8
25 50 75 100 125 150
TJ - Degrees C
to Source Resistance
30
IXF_26N50Q
25
20
IXF_24N50Q
15
- Amperes
D
10
I
5
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees C
50
40
30
TJ = 125oC
20
- Amperes
D
I
TJ = 25oC
10
0
02468
VGS - Volts
Fig.5 Drain Current vs. Case Temperature Fig.6 Drain Current vs Gate Source Voltage
© 2001 IXYS All rights reserved
Page 4
IXFH 24N50Q IXFT 24N50Q
IXFH 26N50Q IXFT 26N50Q
Capacitance - pF
10000
1000
Coss
Crss
12
10
8
6
- Volts
GS
V
4
V
DS
I
I
= 250 V
= 13 A
D
= 10 mA
G
2
0
0 20406080100120
100
0 5 10 15 20 25 30 35 40
Gate Charge - nC
Fig.7 Gate Charge Characteristic Curve Fig.8 Capacitance Curves
50
45
40
35
30
25
20
- Ampere s
D
I
15
10
5
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
TJ = 125OC
TJ = 25OC
f = 1MHz
Ciss
VDS - Volts
VSD - Volts
Fig.9 Drain Current vs Drain to Source Voltage
1.00
D=0.5
0.10
D=0.2
0.01
0.00
D=0.1
D=0.05
D=0.02
D=0.01
Single Pulse
-5
10
10
-4
10
-3
10
-2
10
-1
10
0
10
- K/W
R(th)
JC
Pulse Width - Seconds
Fig.10 Transient Thermal Impedance
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
1
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