Page 1
© 1999 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
V
DSS
TJ= 25°C to 150°C 500 V
V
DGR
TJ= 25°C to 150°C; RGS = 1 MΩ 500 V
V
GS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
TC= 25°C 21N50 21 A
24N50 24 A
26N50 26 A
I
DM
TC= 25°C, pulse width limited by T
JM
21N50 84 A
24N50 96 A
26N50 104 A
I
AR
TC= 25°C 21N50 21 A
24N50 24 A
26N50 26 A
E
AR
TC= 25°C30mJ
dv/dt I
S
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
DSS
,5V/ns
TJ ≤ 150°C, RG = 2 Ω
P
D
TC= 25°C 300 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6 mm (0.062 in.) from case for 10 s 30 0 °C
M
d
Mounting torque 1.13/10 Nm/lb.in.
Weight TO-204 = 18 g, TO-247 = 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
DSS
VGS= 0 V, ID = 250 µA 500 V
V
GS(th)
VDS= VGS, ID = 4 mA 2 4 V
I
GSS
VGS= ±20 VDC, VDS = 0 ±100 nA
I
DSS
VDS= 0.8 • V
DSS
TJ = 25°C 200 µA
VGS= 0 V TJ = 125°C1mA
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
TO-247 AD (IXFH)
TO-204 AE (IXFM)
D
G
Features
• International standard packages
• Low R
DS (on)
HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• High power surface mountable package
• High power density
G = Gate, D = Drain,
S = Source, TAB = Drain
91525H (9/99)
(TAB)
V
DSS
I
D25
R
DS(on)
IXFH/IXFM21N50 500 V 21 A 0.25
ΩΩ
ΩΩ
Ω
IXFH/IXFM/IXFT24N50 500 V 24 A 0.23
ΩΩ
ΩΩ
Ω
IXFH/IXFT26N50 500 V 26 A 0.20
ΩΩ
ΩΩ
Ω
t
rr
≤ ≤
≤ ≤
≤ 250 ns
HiPerFET
TM
Power MOSFETs
TO-268 (D3) Case Style
(TAB)
G
S
Page 2
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
R
DS(on)
VGS= 10 V, ID = 0.5 I
D25
21N50 0.25 Ω
24N50 0.23 Ω
26N50 0.20 Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
g
fs
VDS= 10 V; ID = 0.5 I
D25
, pulse test 11 21 S
C
iss
4200 pF
C
oss
VGS= 0 V, VDS = 25 V, f = 1 MHz 450 p F
C
rss
135 pF
t
d(on)
16 25 ns
t
r
VGS= 10 V, VDS = 0.5 V
DSS
, ID = 0.5 I
D25
33 45 ns
t
d(off)
RG= 2 Ω (External) 65 80 ns
t
f
30 40 ns
Q
g(on)
135 160 n C
Q
gs
VGS= 10 V, VDS = 0.5 V
DSS
, ID = 0.5 I
D25
28 40 nC
Q
gd
62 85 nC
R
thJC
0.42 K/W
R
thCK
(TO-247 Case Style) 0.25 K/W
Source-Drain Diode Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
I
S
VGS= 0 V 21N50 21 A
24N50 24 A
26N50 26 A
I
SM
Repetitive; 21N50 84 A
pulse width limited by T
JM
24N50 96 A
26N50 104 A
V
SD
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t
rr
TJ = 25°C 250 ns
TJ = 125°C 400 ns
Q
RM
TJ = 25°C1µC
TJ = 125°C2µC
I
RM
TJ = 25°C10A
TJ = 125°C15A
IF = I
S
-di/dt = 100 A/µs,
VR = 100 V
Note 1: Add "S" suffix for TO-247 SMD package option (ex: IXFH24N50S)
Dim. Millimeter Inches
Min. Max. Min. Max.
A 6.4 11.4 .250 .450
A1 1.53 3.42 .060 .135
∅b 1.45 1.60 .057 .063
∅D 22.22 .875
e 10.67 11.17 .420 .440
e1 5.21 5.71 .205 .225
L 11.18 12.19 .440 .480
∅p 3.84 4.19 .151 .165
∅p1 3.84 4.19 .151 .165
q 30.15 BSC 1.187 BSC
R 12.58 13.33 .495 .525
R1 3.33 4.77 .131 .188
s 16.64 17.14 .655 .675
TO-204 AE (IXFM) Outline
Pins: 1 - Gate, 2 - Source, Case - Drain
TO-247 AD (IXFH) Outline
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
Min. Recommended Footprint
TO-268 Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
IXFH21N50 IXFH24N50 IXFH26N50
IXFM21N50 IXFM24N50 IXFM26N50
IXFT24N50 IXFT26N50
Page 3
© 1999 IXYS All rights reserved
Fig. 1 Output Characteristics Fig. 2 Input Admittance
Fig. 5 Drain Current vs. Fig. 6 Temperature Dependence of
Case Temperature Breakdown and Threshold Voltage
Fig. 3 R
DS(on)
vs. Drain Current Fig. 4 Temperature Dependence
of Drain to Source Resistance
TJ - Degrees C
-50 -25 0 25 50 75 100 125 150
BV/V
G(th)
- Normalized
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
BV
DSS
V
GS(th)
TC - Degrees C
-50 -25 0 25 50 75 100 125 150
I
D
- Amperes
0
5
10
15
20
25
30
TJ - Degrees C
-50 -25 0 25 50 75 100 125 150
R
DS(on)
- Normalized
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
ID - Amperes
0 5 10 15 20 25 30 35 40 45 50
R
DS(on)
- Normalized
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
VGS - Volts
012345678910
I
D
- Amperes
0
5
10
15
20
25
30
35
40
45
50
TJ = 25°C
V
DS
= 10V
VDS - Volts
0 5 10 15 20 25 30 35
I
D
- Amperes
0
5
10
15
20
25
30
35
40
45
50
6V
5V
TJ = 25°C
VGS = 10V
VGS = 15V
ID = 12A
21N50
24N50
26N50
TJ = 25°C
VGS = 10V
7V
IXFH21N50 IXFH24N50 IXFH26N50
IXFM21N50 IXFM24N50 IXFM26N50
IXFT24N50 IXFT26N50
Page 4
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig.7 Gate Charge Characteristic Curve Fig.8 Forward Bias Safe Operating Area
Fig.9 Capacitance Curves Fig.10 Source Current vs. Source to Drain Voltage
Fig.11 Transient Thermal Impedance
VDS - Volts
1 10 100
I
D
- Amperes
0.1
1
10
100
Gate Charge - nCoulombs
0 25 50 75 100 125 150 175 200
V
GE
- Volts
0
1
2
3
4
5
6
7
8
9
10
VSD - Volt
0.00 0.25 0.50 0.75 1.00 1.25 1.50
I
D
- Amperes
0
5
10
15
20
25
30
35
40
45
50
VDS - Volts
0 5 10 15 20 25
Capacitance - pF
0
500
1000
1500
2000
2500
3000
3500
4000
4500
Time - Seconds
0.00001 0.0001 0.001 0.01 0.1 1 10
Thermal Response - K/W
0.001
0.01
0.1
1
D=0.2
D=0.02
D=0.5
D=0.1
D=0.05
D=0.01
Single pulse
C
rss
C
oss
VDS = 250V
I
D
= 12.5A
I
G
= 10mA
500
10µs
100µs
1ms
10ms
100ms
Limited by R
DS(on)
C
iss
TJ = 25°C
T
J
= 125°C
f = 1 Mhz
V
DS
= 25V
IXFH21N50 IXFH24N50 IXFH26N50
IXFM21N50 IXFM24N50 IXFM26N50
IXFT24N50 IXFT26N50
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