Page 1
PolarHV
TM
Power MOSFET
IXFH 16N80P
IXFT 16N80P
IXFV 16N80P
N-Channel Enhancement Mode
Fast Recovery Diode
Avalanche Rated
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
TJ = 25°C to 150°C 800 V
TJ = 25°C to 150°C; RGS = 1 MΩ 800 V
Continuous ±30 V
Transient ±40 V
TC = 25°C16A
TC = 25°C, pulse width limited by T
TC = 25°C8A
TC = 25°C30mJ
TC = 25°C 1.0 J
≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ V
S
TJ ≤ 150°C, RG = 5 Ω
IXFV 16N80PS
JM
DSS
40 A
10 V/ns
V
DSS
I
D25
R
DS(on)
t
rr
TO-247 (IXFH)
G
D
S
TO-268 (IXFT)
G
PLUS220 (IXFV)
= 800 V
=16 A
≤≤
≤ 600 m
≤≤
≤≤
≤ 250 ns
≤≤
S
ΩΩ
Ω
ΩΩ
D (TAB)
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
F
C
Weight TO-247 6.0 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
TC = 25°C 460 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
1.6 mm (0.062 in.) from case for 10 s 300 °C
Plastic body for 10 s 260 ° C
Mounting torque (TO-247) 1.13/10 Nm/lb.in.
Mounting force (PLUS220) 11..65/2.5..15 N/lb
TO-268 5.0 g
PLUS220 & PLUS220SMD 4.0 g
VGS= 0 V, ID = 250 μA 800 V
VDS= VGS, ID = 4 mA 3.0 5.0 V
VGS= ±30 V, VDS = 0 V ±100 nA
VDS= V
VGS= 0 V TJ = 125°C 250 μA
VGS= 10 V, ID = 0.5 I
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
DSS
D25
25 μA
600 mΩ
G
D
S
PLUS220SMD (IXFV...S)
G
S
G = Gate D = Drain
S = Source TAB = Drain
Features
z
Fast Recovery diode
z
Unclamped Inductive Switching (UIS)
rated
z
International standard packages
z
Low package inductance
- easy to drive and to protect
Advantages
z
Easy to mount
z
Space savings
z
High power density
D (TAB)
D (TAB)
© 2006 IXYS All rights reserved
DS99599E(07/06)
Page 2
IXFH 16N80P IXFT 16N80P
IXFV 16N80P IXFV 16N80PS
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
J
Min. Typ. Max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCS
VDS= 20 V; ID = 0.5 I
, pulse test 9 16 S
D25
4600 pF
VGS = 0 V, VDS = 25 V, f = 1 MHz 330 pF
23 pF
27 ns
VGS= 10 V, VDS = V
DSS, ID
= 0.5 I
D25
32 ns
RG= 5 Ω (External) 75 ns
29 ns
71 nC
VGS= 10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
D25
21 nC
23 nC
0.27 °C/W
(TO-247) 0.21 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
I
S
I
SM
V
SD
t
rr
I
RM
Q
RM
VGS = 0 V 16 A
Repetitive 48 A
IF = IS, VGS = 0 V, pulse test 1.5 V
IF = 25A, -di/dt = 100 A/μs 150 250 ns
VR = 100V; VGS = 0 V 7 A
0.7 μC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Page 3
IXFH 16N80P IXFT 16N80P
IXFV 16N80P IXFV 16N80PS
Fig. 1. Output Characteristics
@ 25ºC
16
V
= 10V
GS
14
12
10
8
- Amperes
D
I
6
4
2
0
012345678910
7V
6V
5V
VDS - Volts
Fig. 3. Output Characteristics
@ 125ºC
16
14
12
10
8
- Amperes
D
I
6
4
2
V
= 10V
GS
7V
6V
5V
Fig. 2. Extended Output Characteristics
@ 25 ºC
24
V
= 10V
GS
22
20
18
16
14
12
- Amperes
10
D
I
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20
7V
6V
5V
VDS - Volts
Fig. 4. R
Norm alized to ID = 8A Value
DS(on)
vs. Junction Temperature
3.1
V
= 10V
GS
2.8
2.5
2.2
1.9
- Normalized
1.6
DS(on)
1.3
R
1
0.7
I D = 16A
I D = 8A
0
0 2 4 6 8 10 12 14 16 18 20
Fig. 5. R
50
2.6
45
V
= 10V
GS
2.4
40
2.2
Normalized to ID = 8A Value
Fig. 7. Input Admittance
DS(on)
vs. Drain Current
35
2
30
1.8
25
- Normalized
1.6
- Amperes
20
D
I
DS(on)
1.4
15
R
1.2
10
5
1
0
0.8
0 2 4 6 8 10 12 14 16 18 2 0 22 24
4 4.5 5 5.5 6 6.5 7 7.5
TJ = 125ºC
25
-40
º
º
V
C
C
ID - Amperes
© 2006 IXYS All rights reserved
VDS - Volts
- Volts
G S
TJ = 125ºC
TJ = 25ºC
0.4
-50 -25 0 25 50 75 100 125 150
TJ - Degrees Cen tigra de
Fig. 6. Maximum Drain Current vs.
Fig. 8. Transconductance
50
20
45
18
TJ = -40ºC
40
16
25
35
14
125
30
12
25
10
- Siemens
- Amperes
20
f s
D
8
I
g
15
6
10
4
5
2
0
0
0 5 10 15 20 25 30 35 40 45 50
-50 -25 0 25 50 75 100 125 150
Case Temperature
º
C
º
C
TC - Degrees Centigrade
I
- Amperes
D
Page 4
IXFH 16N80P IXFT 16N80P
s
IXFV 16N80P IXFV 16N80PS
Fig. 7. Input Admittance
20
18
16
14
12
10
- Amperes
D
8
I
6
4
2
0
3 3.5 4 4.5 5 5.5 6
T
= 125ºC
J
25ºC
- 40ºC
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrin sic Dio de
50
45
40
35
30
25
- Amperes
S
20
I
15
10
5
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
T
= 125ºC
J
VSD - Volts
TJ = 25ºC
Fig. 8. Transconductance
28
24
20
T
= - 40ºC
J
25ºC
16
125ºC
- Siemens
12
f s
g
8
4
0
0 2 4 6 8 1012141618202224
ID - Amperes
Fig. 10. Gate Charge
10
V
= 400V
DS
9
8
7
6
5
- Volts
GS
V
4
3
2
1
0
= 8A
I
D
= 10mA
I
G
0 1020304050607080
QG - NanoCoulombs
Fig. 11. Capacitance
10,000
1,000
Capacitance - PicoFarad
f = 1 MHz
C
iss
C
oss
100
C
10
0 5 10 15 20 25 30 35 40
rss
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 12. Maximum Transient Thermal
Resistance
1.00
0.10
- ºC / W
(th)JC
R
0.01
0.0001 0.001 0.01 0.1 1 10
Pul s e Width - Seco nds
F_16N80P (67) 04-28-06.xls
Page 5
IXFH 26N60P IXFT 26N60P
IXFV 26N60P IXFV 26N60PS
1 2 3
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
2.2 2.54 .087 .102
A
1
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
1.65 2.13 .065 .084
b
1
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-268 (IXFT) Outline TO-247 AD (IXFH) Outline
PLUS220 (IXFV) Outline
PLUS220SMD (IXFV_S) Outline
© 2006 IXYS All rights reserved
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