Datasheet IXFT15N80Q, IXFH15N80Q Datasheet (IXYS)

HiPerFET

TM

Power MOSFETs

Q-Class

IXFH 15N80Q
IXFT 15N80Q

V
I

D25

R

DSS

DS(on)

= 800 V
= 15 A
= 0.60 W

N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q

Symbol Test Conditions Maximum Ratings
V

DSS

V

DGR

V

GS

V

GSM

I

D25

I

DM

I

AR

E

AR

E

AS

dv/dt I

P

D

T

J

T

JM

T

stg

T

L

M

d

Weight TO-247 6 g

Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

V

DSS

V

GS(th)

I

GSS

I

DSS

R

DS(on)

TJ= 25°C to 150°C 800 V
TJ= 25°C to 150°C; RGS = 1 MW 800 V

Continuous ±20 V
Transient ±30 V

TC= 25°C15A
TC= 25°C, pulse width limited by T
TC= 25°C15A

TC= 25°C30mJ
TC= 25°C 1.0 J

£ IDM, di/dt £ 100 A/ms, VDD £ V

S

£ 150°C, RG = 2 W

T

J

TC= 25°C 300 W

1.6 mm (0.062 in.) from case for 10 s 300 °C
Mounting torque 1.13/10 Nm/lb.in.

TO-268 4 g

VGS= 0 V, ID = 3 mA 800 V
VDS= VGS, ID = 4 mA 2.0 4.5 V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= V

V
VGS= 10 V, ID = 0.5 I

DSS

= 0 V TJ = 125°C1mA

GS

D25

Pulse test, t £ 300 ms, duty cycle d £ 2 %

g

JM

, 5 V/ns

DSS

60 A

-55 ... +150 °C
150 °C

-55 ... +150 °C

TJ = 25°C25mA

0.60 W

trr £ 250 ns

TO-247 AD (IXFH)

(TAB)

TO-268 (D3) (IXFT) Case Style

G

S

G = Gate D = Drain
S = Source TAB = Drain

Features

• IXYS advanced low Qg process

• International standard packages

• Low R

• Unclamped Inductive Switching (UIS)

DS (on)

rated

• Fast switching

• Molding epoxies meet UL 94 V-0
flammability classification

Advantages

• Easy to mount

• Space savings

• High power density

(TAB)

IXYS reserves the right to change limits, test conditions, and dimensions.

© 2000 IXYS All rights reserved

98514B (7/00)

1 - 4

IXFH 15N80Q
IXFT 15N80Q

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

Min. Typ. Max.

g
C

C
C

t
t
t
t

Q
Q
Q

R
R

fs

iss

oss

rss

d(on)

r

d(off)

f

g(on)

gs

gd

thJC

thCK

VDS= 10 V; ID = 0.5 I

, pulse test 8 16 S

D25

4300 pF

VGS = 0 V, VDS = 25 V, f = 1 MHz 36 0 pF

60 pF
18 ns

VGS = 10 V, VDS = 0.5 V

, ID = 0.5 I

DSS

D25

27 ns

RG = 1.5 W (External) 53 ns

16 ns
90 nC

VGS = 10 V, VDS = 0.5 V

, ID = 0.5 I

DSS

D25

20 nC
30 nC

0.42 K/W

(TO-247) 0.25 K/W

Source-Drain Diode Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.
I

S

I

SM

V

SD

VGS = 0 V 15 A
Repetitive; 60 A
IF = IS, VGS = 0 V, 1.5 V

Pulse test, t £ 300 ms, duty cycle d £ 2 %

TO-247 AD (IXFH) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845

C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144

E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244

G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177

J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433

L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031

N 1.5 2.49 0.087 0.102

t

rr

Q

RM

I

RM

IF = IS-di/dt = 100 A/ms, VR = 100 V 0.85 mC

TO-268AA (D3 PAK)

8A

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.9 5.1 .193 .201
A

2.7 2.9 .106 .114

1

A2.02 .25 .001 .010
b 1.15 1.45 .045 .057

b

1.9 2.1 .75 .83

2

C .4 .65 .016 .026
D 13.80 14.00 .543 .551

E 15.85 16.05 .624 .632

13.3 13.6 .524 .535

E

1

e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106

L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161

250 ns

Min. Recommended Footprint

© 2000 IXYS All rights reserved

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

2 - 4

IXFH 15N80Q
IXFT 15N80Q

20

TJ = 25OC

16

= 9V

V

GS

8V
7V
6V

12

8

- Amperes

D

I

4

0

0246810

VDS - Volts

2.6

V

= 10V

2.4

2.2

GS

= 125OC

T

J

2.0

1.8

1.6

- Normalized

1.4

DS(ON)

1.2

R

TJ = 25OC

1.0

0.8
0 5 10 15 20 25

ID - Amperes

5V

4V

20

= 125OC

T

J

16

V

= 9V

GS

8V
7V
6V

12

8

- Amperes

D

I

4

0

0 4 8 12 16 20

VDS - Volts

Figure 2. Output Characteristics at 125OCFigure 1. Output Characteristics at 25OC

2.6

V

= 10V

2.4

2.2

2.0

1.8

- Normalized

1.6

DS(ON)

1.4

R

1.2

1.0
25 50 75 100 125 150

GS

TJ - Degrees C

I

= 15A

D

ID = 7.5A

5V

4V

Figure 3. R

20

normalized to value at ID = 12A

DS(on)

Figure 4. R

16

14

normalized to value at ID = 12A

DS(on)

16

12

10

12

IXFH15N80

IXFH14N80

8

8

- Amperes

D

I

4

- Amperes

6

D

I

4

T

= 125oC

J

TJ = 25oC

2

0

-50 -25 0 25 50 75 100 125 150

TC - Degrees C

0

234567

VGS - Volts

Figure 5. Drain Current vs. Case Temperature Figure 6. Admittance Curves

© 2000 IXYS All rights reserved

3 - 4

IXFH 15N80Q
IXFT 15N80Q

12

10

8

6

- Volts

GS

V

4

V
I
I

= 400 V

DS

= 7.5 A

D

= 10 mA

G

2

0

0 20406080100120

Gate Charge - nC

Figure 7. Gate Charge

50

40

30

TJ = 125OC

20

- Amperes

D

I

TJ = 25OC

10

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

VSD - Volts

Figure 9. Source Current vs. Source to Drain Voltage

1.00

- Amperes
I

Capacitance - pF

D

10000

1000

100

Ciss

Crss

f = 1MHz

Coss

10

0 5 10 15 20 25 30 35

VDS - Volts

Figure 8. Capacitance Curves

100

60

10

1

TC = 25OC

0. 1

10 100 1000

V

- Volts

DS

Figure10. Forward Bias Safe Operating
Area

0.1 ms

1 ms
10
ms

100
ms
DC

D=0.5

0.10

D=0.2

0.01

0.00

D=0.1

D=0.05

D=0.02

D=0.01

Single Pulse

-5

10

10

- K/W

R(th)

JC

Figure 11. Transient Thermal Resistance

© 2000 IXYS All rights reserved

-4

10

-3

10

-2

10

-1

10

0

10

1

Pulse Width - Seconds

4 - 4