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查询IXFH14N100供应商查询IXFH14N100供应商
HiPerFET
TM
Power MOSFETs
IXFH/IXFT/IXFX14 N100 1000 V 14 A 0.75 W
V
IXFH/IXFT/IXFX15 N100 1000 V 15 A 0.70 W
N-Channel Enhancement Mode
High dv/dt, Low t
Preliminary data sheet
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight 6 g
TJ= 25°C to 150°C 1000 V
TJ= 25°C to 150°C; RGS = 1 MW 1000 V
Continuous ±20 V
Transient ±30 V
TC= 25°C 14N100 14 A
TC= 25°C, pulse width limited by T
TC= 25°C 14N100 14 A
TC= 25°C45mJ
S
TJ£ 150°C, RG = 2 W
TC= 25°C 360 W
1.6 mm (0.062 in.) from case for 10 s 300 °C
Mounting torque 1.13/10 Nm/lb.in.
, HDMOSTM Family
rr
£ IDM, di/dt £ 100 A/ms, VDD £ V
15N100 15 A
14N100 56 A
JM
15N100 60 A
15N100 15 A
, 5 V/ns
DSS
-55 ... +150 °C
-55 ... +150 °C
trr £ 200 ns
150 °C
DSS
I
D25
R
DS(on)
TO-247 AD
(IXFH)
PLUS 247
TM
(IXFX)
G
D
TO-268 (D3)
(IXFT)
G
S
Features
●
International standard packages
●
Low R
●
Rugged polysilicon gate cell structure
●
Unclamped Inductive Switching (UIS)
HDMOSTM process
DS (on)
rated
●
Low package inductance
- easy to drive and to protect
●
Fast intrinsic Rectifier
(TAB)
(TAB)
(TAB)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
V
I
I
R
GSS
DSS
DSS
GS(th)
DS(on)
VGS= 0 V, ID = 1 mA 1000 V
VDS= VGS, ID = 4 mA 2.5 4.5 V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= 0.8 • V
VGS= 0 V TJ = 125°C1mA
DSS
VGS= 10 V, ID = 0.5 • I
TJ =25°C 250 mA
D25
14N100 0.75 W
15N100 0.70 W
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
Applications
●
DC-DC converters
●
Battery chargers
●
Switched-mode and resonant-mode
power supplies
●
DC choppers
●
AC motor control
●
Temperature and lighting controls
Advantages
●
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole) or
mounting clip or spring (PLUS 247TM)
●
High power surface mountable package
●
High power density
97535B (1/99)
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IXFH14N100 IXFT14N100 IXFX15N100
IXFH15N100 IXFT15N100 IXFX14N100
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
J
VDS= 10 V; ID = 0.5 • I
, pulse test 6 10 S
D25
VGS= 0 V, VDS = 25 V, f = 1 MHz 430 pF
VGS= 10 V, VDS = 0.5 • V
RG = 2 W (External), 120 ns
VGS= 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
, ID = 0.5 • I
DSS
(TO-247 Case Style)
min. typ. max.
4500 pF
150 pF
27 ns
D25
30 ns
30 ns
220 nC
D25
30 nC
85 nC
0.35 K/W
0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
TO-247 AD (IXFH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
PLUS247
TM
(IXFX) Outline
I
S
I
SM
V
SD
t
rr
VGS= 0 V 14N100 14 A
Repetitive; 14N100 56 A
pulse width limited by T
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IF = I
Q
RM
-di/dt = 100 A/ms,
VR = 100 V
I
RM
TO-268AA (D3 PAK)
15N100 15 A
JM
S
15N100 60 A
TJ =25°C 200 ns
TJ = 125°C 350 ns
TJ =25°C1mC
TJ = 125°C2mC
TJ =25°C10A
TJ = 125°C15A
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
2.7 2.9 .106 .114
A
1
A2.02 .25 .001 .010
b 1.15 1.45 .045 .057
b
1.9 2.1 .75 .83
2
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E
13.3 13.6 .524 .535
1
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
Min. Recommended Footprint
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
2.29 2.54 .090 .100
1
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
1.91 2.13 .075 .084
b
1
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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IXFH14N100 IXFT14N100 IXFX15N100
IXFH15N100 IXFT15N100 IXFX14N100
20
16
TJ = 25OC
= 9V
V
GS
8V
7V
6V
5V
16
12
= 125OC
T
J
V
= 9V
GS
8V
7V
6V
12
8
8
- Amperes
D
I
4
0
048121620
VDS - Volts
4V
- Amperes
D
I
4
0
0 4 8 12 16 20
VDS - Volts
Fig.1 Output Characteristics Fig.2 Output characteristics at elevated
temperature
- Normalized
DS(ON)
R
2.0
1.8
1.6
1.4
1.2
1.0
V
GS
= 10V
T
= 125OC
J
TJ = 25OC
- Normalized
DS(ON)
R
2.2
2.0
1.8
1.6
1.4
1.2
V
= 10V
GS
= 15A
I
D
ID = 7.5A
5V
4V
0.8
03691215
1.0
25 50 75 100 125 150
ID - Amperes
Fig.3 R
vs. Drain Current Fig.4 Temperature Dependence of Drain
DS(on)
to Source Resistance
20
16
12
8
- Amperes
D
I
IXF_15N100
IXF_14N100
4
0
-50 -25 0 25 50 75 100 125 150
14
12
10
8
6
- Amperes
D
I
4
T
= 125oC
J
2
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0
TC - Degrees C
Fig.5 Drain Current vs. Case Temperature Fig.6 Input admittance
TJ - Degrees C
TJ = 25oC
VGS - Volts
© 2000 IXYS All rights reserved
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IXFH14N100 IXFT14N100 IXFX15N100
IXFH15N100 IXFT15N100 IXFX14N100
12
V
= 500V
Vds=300V
10
I
I
I
I
DS
=30A
= 7.5A
D
D
=10mA
= 10mA
G
G
8
6
- Volts
GS
V
4
2
0
0 40 80 120 160 200 240 280
Gate Charge - nC
Fig.7 Gate Charge Characteristic Curve Fig.8 Capacitance Curves
40
32
24
TJ = 125OC
5000
2500
1000
500
Capacitance - pF
250
100
Ciss
f = 1MHz
Coss
Crss
0 5 10 15 20 25 30 35 40
VDS - Volts
16
- Amperes
D
I
TJ = 25OC
8
0
0.40.60.81.01.21.41.6
VSD - Volts
Fig.9 Source current vs Source drain voltage.
1
- K/W
0.1
JC
R(th)
0.01
10
-3
10
-2
10
Single pulse
-1
10
0
10
1
Fig.10 Transient Thermal Impedance
© 2000 IXYS All rights reserved
Pulse Width - Seconds
4 - 4
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