Page 1
PolarHV
TM
HiPerFET
IXFR 32N80P
Power MOSFET
ISOPLUS247
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TM
V
I
D25
R
t
rr
DSS
DS(on)
= 800 V
=20 A
≤≤
≤ 290 m
≤≤
≤≤
≤ 250 ns
≤≤
ΩΩ
Ω
ΩΩ
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
F
C
V
ISOL
Weight 5g
Symbol Test Conditions Characteristic Values
(TJ = 25° C, unless otherwise specified) Min. Typ. Max.
BV
DSS
V
GS(th)
I
GSS
I
DSS
TJ= 25° C to 150° C 800 V
TJ= 25° C to 150° C; RGS = 1 MΩ 800 V
Continuous ±30 V
Transient ±40 V
TC= 25° C20A
TC= 25° C, pulse width limited by T
TC= 25° C16A
TC= 25° C50mJ
TC= 25° C 1.5 J
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
TJ≤ 150° C, RG = 4 Ω
TC= 25° C 300 W
1.6 mm (0.062 in.) from case for 10 s 300 ° C
Mounting force 20..120/4.5..26 N/lb
50/60 Hz, RMS t = 1 minute 2500 V~
VGS= 0 V, ID = 250 µA 800 V
VDS= VGS, ID = 8 mA 3.0 5.0 V
VGS= ±30 VDC, VDS = 0 ±200 nA
VDS= V
VGS= 0 V TJ = 125° C 1000 µA
DSS
JM
, 10 V/ns
DSS
-55 ... +150 °C
-55 ... +150 °C
70 A
150 °C
25 µA
ISOPLUS247 (IXFR)
Features
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
Low drain to tab capacitance(<30pF)
l
Low R
l
Rugged polysilicon gate cell structure
l
Rated for Unclamped Inductive Load
Switching (UIS)
l
Fast intrinsic Rectifier
Applications
l
DC-DC converters
l
Battery chargers
l
Switched-mode and resonant-mode
power supplies
l
DC choppers
l
AC motor control
Advantages
l
Easy assembly
l
Space savings
l
High power density
E153432
(Isolated Tab)
G = Gate D = Drain
S = Source
HDMOSTM process
DS (on)
R
DS(on)
© 2006 IXYS All rights reserved
VGS= 10 V, ID = I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
T
290 m Ω
DS99419E(01/06)
Page 2
IXFR 32N80P
Symbol Test Conditions Characteristic Values
(TJ = 25° C unless otherwise specified)
Min. Typ. Max.
g
C
C
C
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
R
R
fs
iss
oss
rss
g(on)
gs
gd
thJC
thCs
VDS= 20 V; ID = IT, pulse test 23 38 S
8800 pF
VGS = 0 V, VDS = 25 V, f = 1 MHz 700 pF
26 pF
30 ns
VGS= 10 V, VDS = 0.5 V
, ID =0.5 I
DSS
D25
24 ns
RG= 2 Ω (External) 85 ns
24 ns
150 nC
VGS= 10 V, VDS = 0.5 V
DSS
, ID = I
T
40 nC
44 nC
0.42 ° C/W
0.15 ° C/W
Source-Drain Diode Characteristic Values
= 25° C unless otherwise specified)
(T
Symbol Test Conditions Min. Typ. Max.
J
ISOPLUS 247 OUTLINE
I
S
I
SM
V
SD
VGS = 0 V 32 A
Repetitive 70 A
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t
rr
Q
RM
I
RM
Note: Test current I
IF = 25A, -di/dt = 100 A/µs 250 ns
VR = 100V 0.8 µC
= 16A
T
6.0 A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
Page 3
IXFR 32N80P
Fig. 1. Output Characteristics
º
C
@ 25
35
V
= 10V
D S
GS
6V
5V
4V
- Volts
30
25
20
15
- Amperes
D
I
10
5
0
012 345678910
V
Fig. 3. Output Character istics
º
C
V
= 10V
GS
6V
5V
4V
- Amperes
I
@ 125
35
30
25
20
15
D
10
5
Fig. 2. Extended Output Characteristics
º
C
@ 25
70
V
= 10V
GS
60
50
40
30
- Amperes
D
I
20
10
0
0 5 10 15 20 25 30
Fig . 4. R
7V
6V
5V
4V
V
- Volts
D S
Norm alize d to ID = 16A
DS(on
)
Value vs. Junction Tem perature
3.1
2.8
2.5
2.2
1.9
- Normalized
1.6
1.3
D S ( o n )
1.0
R
0.7
VGS = 10V
I
D
= 32A
I
D
= 16A
0
03691215182124
Fig . 5. R
I
= 16A Value vs . Drain Cur re nt
D
2.8
- Normalized
D S ( o n )
R
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
VGS = 10V
0 10203040506070
DS(on)
© 2006 IXYS All rights reserved
V
- Volts
D S
Norm alize d to
I D - Amperes
T
= 125ºC
J
T
J
= 25ºC
0.4
-50 -25 0 25 50 75 100 125 150
T
- Degrees Centigrade
J
Fig. 6. Drain Curr e nt vs . Case
Tem perature
20
18
16
14
12
10
8
- Amperes
D
I
6
4
2
0
-50 -25 0 25 50 75 100 125 150
T
- Degrees Centigrade
C
Page 4
IXFR 32N80P
Fig. 7. Input Adm ittance
45
40
35
30
25
20
- Amperes
D
I
15
10
5
0
33.544.55
TJ = 125ºC
25
-40
º
º
V
G S
C
C
- Volts
Fig. 9. Sour ce Cu r r e nt vs .
Source-To-Drain Voltage
100
90
80
70
60
50
- Amperes
40
S
I
30
20
10
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
T
= 125ºC
J
V
S D
- Volts
T
J
= 25ºC
Fig. 8. Transconductance
70
60
50
40
- Siemens
30
f s
g
20
10
0
0 5 10 15 20 25 30 35 40 45
TJ = -40ºC
º
25
º
125
I
- Amperes
D
C
C
Fig. 10. Gate Char g e
10
9
V
= 400V
DS
I
= 16A
D
I
= 10m A
G
0 20 40 60 80 100 120 140 160
- Volts
V
G S
8
7
6
5
4
3
2
1
0
Q G - nanoCoulombs
Fig. 11. Capacitance
100000
f = 1MHz
C
10000
1000
Capacitance - picoFarads
100
10
0 5 10 15 20 25 30 35 40
V
- Volts
D S
iss
C
oss
C
rs
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 12. Maxim um Trans ie n t The rm al
Resistance
1.00
C / W
º
-
0.10
( t h ) J C
R
0.01
1 10 100 1000
Pulse Width - milliseconds
Page 5
IXFR 32N80P
Fig. 13. Maxim um Trans ient Therm al Res is tance
1.000
0.100
C / W
º
-
( t h ) J C
R
0.010
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
© 2006 IXYS All rights reserved
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