Page 1
Preliminary Technical Information
PolarHV
TM
HiPerFET
IXFP 3N50PM
Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
Continuous ± 30 V
V
GSS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight 4g
TJ= 25° C to 150° C 500 V
TJ= 25° C to 150° C; RGS = 1 MΩ 500 V
Transient ± 40 V
TC= 25° C 2.7 A
TC= 25° C, pulse width limited by T
TC= 25° C3A
TC= 25° C10mJ
TC= 25° C 100 mJ
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
TJ≤ 150° C, RG = 50 Ω
TC= 25° C36W
1.6 mm (0.062 in.) from case for 10 s 300 °C
Plastic body for 10 s 260 °C
Mounting torque 1.13/10 Nm/lb.in.
JM
, 10 V/ns
DSS
-55 ... +150 °C
-55 ... +150 °C
8A
150 °C
OVERMOLDED TO-220
(IXTP...M) OUTLINE
Features
l
Plastic overmolded tab for electrical
isolation
l
Fast intrinsic diode
l
International standard package
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
V
DSS
I
D25
R
DS(on)
t
rr
G
D
G = Gate D = Drain
S = Source
= 500 V
= 2.7 A
≤≤
≤ 2.0
≤≤
≤≤
≤ 200 ns
≤≤
S
Isolated Tab
ΩΩ
Ω
ΩΩ
Symbol Test Conditions Characteristic Values
(TJ = 25° C, unless otherwise specified) Min. Typ. Max.
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
© 2006 IXYS All rights reserved
VGS= 0 V, ID = 250 µA 500 V
VDS= VGS, ID = 250 µA 3.0 5.5 V
VGS= ±30 VDC, VDS = 0 ±100 nA
VDS= V
VGS= 0 V TJ = 125° C 200 µA
VGS= 10 V, ID = 1.8 A 2.0 Ω
Note 1
DSS
5 µA
Advantages
l
Easy to mount
l
Space savings
l
High power density
DS99509E(04/06)
Page 2
IXFP 3N50PM
Symbol Test Conditions Characteristic Values
= 25° C, unless otherwise specified)
J
Min. Typ. Max.
409 pF
6.1 pF
25 ns
29 ns
9.3 nC
3.4 nC
3.5 °C/W
g
C
C
C
t
t
t
t
Q
Q
Q
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
(T
VDS= 10 V; ID = 1.8 A, Note 1 3.5 S
VGS = 0 V, VDS = 25 V, f = 1 MHz 48 pF
VGS = 10 V, VDS = 0.5 V
, ID = 3.6 A 28 ns
DSS
RG = 50 Ω (External) 63 ns
VGS= 10 V, VDS = 0.5 V
, ID = 1.8 3.3 nC
DSS
Source-Drain Diode Characteristic Values
(T
Symbol Test Conditions Min. Typ. Max.
= 25° C unless otherwise specified)
J
ISOLATED TO-220 (IXTP...M)
123
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
VGS = 0 V 3.6 A
Repetitive 5 A
IF = IS, VGS = 0 V, Note 1 1.5 V
IF = 3.6 A, -di/dt = 100 A/µs, 200 ns
VR = 100 V, VGS = 0 V 0.1 µC
0.5 A
Notes: 1) Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
2) Test current I
= 2.5 A
T
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered
are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production
design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
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