Page 1
PolarHV
TM
HiPerFET
IXFL 60N80P
Power MOSFET
ISOPLUS264
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol Test Conditions Maximum Ratings
TM
V
DSS
I
D25
R
DS(on)
≤ ≤
t
≤ 250 ns
≤ ≤
rr
ISOPLUS264
= 800 V
= 40 A
≤ ≤
≤ 150 m
≤ ≤
TM
(IXFL)
ΩΩ
Ω
ΩΩ
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
F
C
Weight 5g
TJ= 25° C to 150° C 800 V
TJ= 25° C to 150° C; RGS = 1 MΩ 800 V
Continuous ±30 V
Transient ±40 V
TC= 25° C40A
TC= 25° C, pulse width limited by T
TC= 25° C30A
TC= 25° C 100 mJ
TC= 25° C5J
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
TJ≤ 150° C, RG = 2 Ω
TC= 25° C 625 W
1.6 mm (0.062 in.) from case for 10 s 300 °C
50/60 Hz, RMS t = 1 min 2500 V~
I
≤ 1 mA t = 1 s 3000 V~
ISOL
Mounting force 28..150 / 6.4..30 N/lb
JM
, 20 V/ns
DSS
-55 ... +150 °C
-55 ... +150 °C
150 A
150 °C
G = Gate D = Drain
S = Source
Features
l
International standard isolated
package
l
UL recognized package
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
l
Fast intrinsic diode
Advantages
G
D
S
(Isolated Tab)
Symbol Test Conditions Characteristic Values
(TJ = 25° C, unless otherwise specified) Min. Typ. Max.
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
© 2006 IXYS All rights reserved
VGS= 0 V, ID = 3 mA 800 V
VDS= VGS, ID = 8 mA 3.0 5.0 V
VGS= ±30 VDC, VDS = 0 ±200 nA
VDS= V
VGS= 0 V TJ = 125° C 3000 µA
VGS= 10 V, ID = IT, Note 1 150 m Ω
DSS
25 µA
l
Easy to mount
l
Space savings
l
High power density
DS99561E(02/06)
Page 2
IXFL 60N80P
Symbol Test Conditions Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCS
VDS= 20 V; ID = IT, Note 1 35 67 S
18 nF
VGS = 0 V, VDS = 25 V, f = 1 MHz 1200 pF
44 pF
36 ns
VGS= 10 V, VDS = 0.5 V
DSS
, ID = I
T
29 ns
RG= 1 Ω (External) 110 ns
26 ns
250 nC
VGS= 10 V, VDS = 0.5 V
DSS
, ID = I
T
90 nC
78 nC
0.20 ° C/W
0.13 ° C/W
Source-Drain Diode Characteristic Values
(TJ = 25° C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISOPLUS264 (IXFL) Outline
Note: Bottom heatsink meets
2500Vrms Isolation to the other pins.
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
VGS = 0 V 60 A
Repetitive 150 A
IF = IS, VGS = 0 V, Note 1 1.5 V
IF = 25A, -di/dt = 100 A/µs 250 ns
VR = 100V 0.6 µC
Notes:
1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Test Current IT = 30 A
Ref: IXYS CO 0128 R0
6.0 A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
Page 3
IXFL 60N80P
Fig. 1. Output Characteristics
@ 25ºC
60
55
50
45
40
35
30
- Amperes
25
D
I
20
15
10
5
0
0123456789
VDS - Volts
V
= 10V
GS
7V
6V
5V
Fig. 3. Output Characteristics
@ 125ºC
60
V
= 10V
GS
55
50
45
40
35
30
- Amperes
25
D
I
20
15
10
5
0
0 2 4 6 8 10 12 14 16 18 20
VDS - Volts
7V
6V
5V
Fig. 2. Extended Output Characteristics
@ 25ºC
120
100
80
60
- Amperes
D
I
40
20
0
0 3 6 9 12 15 18 21 24 27 30
Fig. 4. R
DS(on)
V
= 10V
GS
7V
6V
5V
VDS - Vo lts
Normalized to ID = 30A Value
vs. Junction Temperature
3.2
V
= 10V
GS
2.8
2.4
2
- Normalized
1.6
DS(on)
R
1.2
0.8
0.4
-50 -25 0 25 50 75 100 125 150
I D = 60A
I D = 30A
TJ - Degrees Centigrade
Fig. 5. R
Norma lize d to ID = 30A Value
DS(on)
vs. Drain Current
2.8
V
= 10V
GS
2.6
2.4
2.2
2
1.8
- Normalize d
1.6
DS(on)
1.4
R
1.2
1
0.8
0 20 40 60 80 100 120
TJ = 125ºC
TJ = 25ºC
ID - Am peres
© 2006 IXYS All rights reserved
Fig. 6. Maximum Drain Current vs.
Case Temperature
45
40
35
30
25
20
- Amp eres
D
I
15
10
5
0
-50 -25 0 25 50 75 100 125 150
TJ - Degrees Centigrade
Page 4
IXFL 60N80P
Fig. 7. Input Admittance
80
70
60
50
40
- Amperes
D
I
30
20
10
0
4 4.25 4.5 4.75 5 5.25 5.5 5.75 6 6.25 6.5 6.75
T
= 125ºC
J
25ºC
- 40ºC
VGS - Vo lts
Fig. 9. Forward Voltage Drop of
Intrins ic Diode
180
160
140
120
100
80
- Amperes
S
I
60
40
20
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4
T
= 125ºC
J
VSD - Volts
TJ = 25ºC
Fig. 8. Transconductance
130
120
110
100
90
80
T
= - 40ºC
J
70
25ºC
60
125 ºC
- Siemens
f s
50
g
40
30
20
10
0
0 1020304050607080
ID - Amperes
Fig. 10. Gate Charge
10
V
= 400V
DS
9
8
7
6
5
- Volts
GS
V
4
3
2
1
0
= 30A
I
D
I
= 10mA
G
0 20 40 60 80 100 120 140 160 180 200 220 240 260
QG - NanoCoulo mbs
Fig. 11. Capacitance
100,000
f = 1 MHz
10,000
1,000
100
Capacitance - PicoFarads
10
0 5 10 15 20 25 30 35 40
C
iss
C
oss
C
rss
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 12. Maximum Transient Thermal
Resistance
1.000
0.100
- ºC / W
(th)JC
R
0.010
0.001
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
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