Page 1
TM TM
TM
HiPerFETHiPerFET
HiPerFET
HiPerFETHiPerFET
ISOPLUSISOPLUS
ISOPLUS
ISOPLUSISOPLUS
(Electrically Isolated Backside)(Electrically Isolated Backside)
(Electrically Isolated Backside)
(Electrically Isolated Backside)(Electrically Isolated Backside)
TM TM
Power MOSFETsPower MOSFETs
Power MOSFETs
Power MOSFETsPower MOSFETs
TMTM
TM
264264
264
264264
TMTM
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
Preliminary Data SheetPreliminary Data Sheet
Preliminary Data Sheet
Preliminary Data SheetPreliminary Data Sheet
SymbolSymbol
Symbol
SymbolSymbol
VV
V
VV
DSSDSS
DSS
DSSDSS
VV
V
VV
DGRDGR
DGR
DGRDGR
VV
V
VV
GSGS
GS
GSGS
VV
V
VV
GSMGSM
GSM
GSMGSM
II
I
II
D25D25
D25
D25D25
II
I
II
DMDM
DM
DMDM
II
I
II
ARAR
AR
ARAR
Test ConditionsTest Conditions
Test Conditions
Test ConditionsTest Conditions
T
= 25°C to 150°C 1000 V
J
T
= 25°C to 150°C; RGS = 1 MΩ 1000 V
J
Continuous ±20 V
Transient ±30 V
T
= 25°C30A
C
T
= 25°C, Note 1 136 A
C
T
= 25°C34A
C
rr
IXFL 34N100IXFL 34N100
IXFL 34N100
IXFL 34N100IXFL 34N100
Maximum RatingsMaximum Ratings
Maximum Ratings
Maximum RatingsMaximum Ratings
VV
V
VV
DSSDSS
DSS
DSSDSS
II
I
II
D25D25
D25
D25D25
RR
R
RR
DS(on)DS(on)
DS(on)
DS(on)DS(on)
ISOPLUS-264ISOPLUS-264
ISOPLUS-264
ISOPLUS-264ISOPLUS-264
G = Gate C = Collector
E = Emitter Tab = Collector
TMTM
TM
TMTM
G
==
=
==
==
=
==
==
=
==
C
E
10001000
1000
10001000
30 30
30
30 30
0.28 0.28
0.28
0.28 0.28
Ω Ω
Ω
Ω Ω
VV
V
VV
AA
A
AA
(TAB)
EE
E
EE
ARAR
AR
ARAR
EE
E
EE
ASAS
AS
ASAS
dv/dtdv/dt
dv/dt I
dv/dtdv/dt
PP
P
PP
DD
D
DD
TT
T
TT
JJ
J
JJ
TT
T
TT
JMJM
JM
JMJM
TT
T
TT
stgstg
stg
stgstg
TT
T
TT
LL
L
LL
VV
V
VV
ISOLISOL
ISOL
ISOLISOL
WeightWeight
Weight 5 g
WeightWeight
SymbolSymbol
Symbol
SymbolSymbol
V
DSS
V
GS(th)
II
I
II
GSSGSS
GSS
GSSGSS
II
I
II
DSSDSS
DSS
DSSDSS
RR
R
RR
DS(on)DS(on)
DS(on)
DS(on)DS(on)
T
= 25°C64mJ
C
T
= 25°C4J
C
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
T
≤ 150°C, RG = 2 Ω
J
T
= 25°C 550 W
C
1.6 mm (0.063 in.) from case for 10 s 300 °C
50/60 Hz, RMS t = 1 min 2500 V~
I
≤ 1 mA t = 1 s 3000 V~
ISOL
Test ConditionsTest Conditions
Test Conditions
Test ConditionsTest Conditions
V
V
V
VDS = V
V
VGS = 10 V, ID = I
Note 1
= 0 V, ID = 3mA 1000 V
GS
= VGS, ID = 8mA 2.5 5.0 V
DS
= ±20 V
GS
= 0 V T
GS
DSS
, V
= 0 ±100 nA
DC
DS
T
DSS
-55 ... +150 °C
150 °C
-55 ... +150 °C
Characteristic ValuesCharacteristic Values
Characteristic Values
Characteristic ValuesCharacteristic Values
(T
= 25°C, unless otherwise specified)
J
T
= 25°C 100 µA
J
= 125°C2 mA
J
min.min.
typ.typ.
min.
typ.
min.min.
typ.typ.
0.28 Ω
5 V/ns
max.max.
max.
max.max.
FeaturesFeatures
Features
FeaturesFeatures
z
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z
Low drain to tab capacitance(<30pF)
z
Low R
z
Rugged polysilicon gate cell structure
z
Unclamped Inductive Switching (UIS)
rated
z
Fast intrinsic Rectifier
ApplicationsApplications
Applications
ApplicationsApplications
z
DC-DC converters
z
Battery chargers
z
Switched-mode and resonant-mode
power supplies
z
DC choppers
z
AC motor control
AdvantagesAdvantages
Advantages
AdvantagesAdvantages
z
Easy assembly
z
Space savings
z
High power density
HDMOSTM process
DS (on)
© 2002 IXYS All rights reserved
98932 (7/02)
Page 2
IXFL 34N100IXFL 34N100
IXFL 34N100
IXFL 34N100IXFL 34N100
SymbolSymbol
Symbol
SymbolSymbol
gg
g
gg
fsfs
fs
fsfs
CC
C
CC
ississ
iss
ississ
CC
C
CC
ossoss
oss
ossoss
CC
C
CC
rssrss
rss
rssrss
tt
t
tt
d(on)d(on)
d(on)
d(on)d(on)
tt
t
tt
rr
r
rr
tt
t
tt
d(off)d(off)
d(off)
d(off)d(off)
tt
t
tt
ff
f
ff
QQ
Q
QQ
g(on)g(on)
g(on)
g(on)g(on)
QQ
Q
QQ
gsgs
gs
gsgs
QQ
Q
QQ
gdgd
gd
gdgd
RR
R
RR
thJCthJC
thJC
thJCthJC
RR
R
RR
thCKthCK
thCK
thCKthCK
Source-Drain DiodeSource-Drain Diode
Source-Drain Diode
Source-Drain DiodeSource-Drain Diode
SymbolSymbol
Symbol
SymbolSymbol
Test ConditionsTest Conditions
Test Conditions
Test ConditionsTest Conditions
VDS= 15 V; ID = I
Test ConditionsTest Conditions
Test Conditions
Test ConditionsTest Conditions
Characteristic ValuesCharacteristic Values
Characteristic Values
Characteristic ValuesCharacteristic Values
= 25°C, unless otherwise specified)
(T
J
T
Note 2 18 40 S
min.min.
min.
min.min.
typ.typ.
typ.
typ.typ.
max.max.
max.
max.max.
9200 pF
VGS = 0 V, VDS = 25 V, f = 1 MHz 1200 pF
300 pF
41 ns
VGS = 10 V, VDS = 0.5 • V
R
= 1 Ω (External) 110 ns
G
DSS
, ID = I
T
65 ns
30 ns
380 nC
VGS = 10 V, VDS = 0.5 • V
DSS
, ID = I
T
65 nC
185 nC
0.225 K/W
0.05 K/W
Characteristic ValuesCharacteristic Values
Characteristic Values
Characteristic ValuesCharacteristic Values
(T
= 25°C, unless otherwise specified)
J
min.min.
min.
min.min.
typ.typ.
typ.
typ.typ.
max.max.
max.
max.max.
ISOPLUS 264 OUTLINE
II
I
II
SS
S
SS
II
I
II
SMSM
SM
SMSM
VV
V
VV
SDSD
SD
SDSD
tt
t
tt
rrrr
rr
rrrr
QQ
Q
QQ
RMRM
RM
RMRM
II
I
II
RMRM
RM
RMRM
Note: 1. Pulse width limited by T
VGS = 0 V 34 A
Repetitive; 136 A
pulse width limited by T
IF = IS, VGS = 0 V, Note 1 1.3 V
IF = I
,-di/dt = 100 A/µs, V
S
2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
3. Test current I
= 30A
T
JM
JM
= 100 V T
R
= 25°C 180 ns
J
T
= 125°C 330 ns
J
T
= 25°C2 µC
J
8A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Loading...