Page 1
PolarHV
TM
HiPerFET
Power MOSFET
ISOPLUS264
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TM
IXFL 100N50P
V
DSS
I
D25
R
DS(on)
≤ ≤
t
≤ 200 ns
≤ ≤
rr
= 500 V
= 70 A
≤ ≤
≤ 52 m
≤ ≤
ΩΩ
Ω
ΩΩ
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
F
C
Weight 5g
TJ= 25° C to 150° C 500 V
TJ= 25° C to 150° C; RGS = 1 MΩ 500 V
Continuous ±30 V
Transient ±40 V
TC= 25° C70A
TC= 25° C, pulse width limited by T
TC= 25° C 100 A
TC= 25° C 100 mJ
TC= 25° C5J
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
TJ≤ 150° C, RG = 2 Ω
TC= 25° C 625 W
1.6 mm (0.062 in.) from case for 10 s 300 °C
50/60 Hz, RMS t = 1 min 2500 V~
I
≤ 1 mA t = 1 s 3000 V~
ISOL
Mounting force 28..150 / 6.4..30 N/lb
JM
, 20 V/ns
DSS
-55 ... +150 °C
-55 ... +150 °C
250 A
150 °C
ISOPLUS264
G = Gate D = Drain
S = Source
Features
l
International standard isolated
package
l
UL recognized package
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
l
Fast intrinsic diode
Advantages
G
D
S
ISOLATEDTAB
Symbol Test Conditions Characteristic Values
(TJ = 25° C, unless otherwise specified) Min. Typ. Max.
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
© 2006 IXYS All rights reserved
VGS= 0 V, ID = 3 mA 500 V
VDS= VGS, ID = 8 mA 3.0 5.0 V
VGS= ±30 VDC, VDS = 0 ±200 nA
VDS= V
VGS= 0 V TJ = 125° C 2000 µA
VGS= 10 V, ID = IT, Note 1 52 m Ω
DSS
25 µA
l
Easy to mount
l
Space savings
l
High power density
DS99563E(01/06)
Page 2
IXFL 100N50P
Symbol Test Conditions Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCS
VDS= 20 V; ID = IT, Note 1 50 80 S
20 nF
VGS = 0 V, VDS = 25 V, f = 1 MHz 1700 pF
140 pF
36 ns
VGS= 10 V, VDS = 0.5 V
DSS
, ID = I
T
29 ns
RG= 1 Ω (External) 110 ns
26 ns
240 nC
VGS= 10 V, VDS = 0.5 V
DSS
, ID = I
T
96 nC
78 nC
0.20 ° C/W
0.13 ° C/W
Source-Drain Diode Characteristic Values
= 25° C, unless otherwise specified)
(T
Symbol Test Conditions Min. Typ. Max.
J
ISOPLUS264 (IXFL) Outline
Note: Bottom heatsink meets
2500Vrms Isolation to the other pins.
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
VGS = 0 V 100 A
Repetitive 250 A
IF = IS, VGS = 0 V, Note 1 1.5 V
IF = 25A, -di/dt = 100 A/µs 200 ns
VR = 100V 0.6 µC
Notes:
1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Test Current IT = 50 A
Ref: IXYS CO 0128 R0
6.0 A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
Page 3
IXFL 100N50P
Fig. 1. Output Characteristics
@ 25ºC
100
90
80
70
60
50
- Amperes
40
D
I
30
20
10
0
00.511.522.533.544.555.5
V
GS
8V
VDS - Vo lts
= 10V
7V
6V
5V
Fig. 3. Output Characteristics
@ 125ºC
100
90
80
70
60
50
- Amperes
40
D
I
30
20
10
0
01234 567891011
VDS - Volts
V
= 10V
GS
8V
7V
6V
5V
Fig. 2. Extended Output Characteristics
@ 25ºC
220
200
180
160
140
120
100
- Amp eres
D
I
80
60
40
20
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26
Fig. 4. R
V
= 10V
GS
9V
8V
7V
6V
VDS - Vo lts
Normalized to ID = 50A Value
DS(on)
vs. Junction Temperature
3.1
V
2.8
2.5
2.2
1.9
- Normalized
1.6
1.3
DS(on)
R
1
0.7
0.4
-50 -25 0 25 50 75 100 125 150
= 10V
GS
TJ - Degrees Centigrade
I D = 100A
I D = 50A
Fig. 5. R
Norm a liz e d to ID = 50A Value
DS(on)
vs. Drain Current
3
V
2.8
2.6
2.4
2.2
2
- Normalize d
1.8
1.6
DS(on)
R
1.4
1.2
1
0.8
0 20 40 60 80 100 120 140 160 180 200 220
GS
= 10V
TJ = 125ºC
TJ = 25ºC
ID - Am peres
© 2006 IXYS All rights reserved
Fig. 6. Maximum Drain Current v s.
Case Temperature
80
70
60
50
40
- Amperes
D
I
30
20
10
0
-50 -25 0 25 50 75 100 125 150
TJ - Degrees Centigrade
Page 4
IXFL 100N50P
Fig. 7. Input Admittance
160
140
120
100
80
- Amp eres
D
I
60
40
20
0
4 4.5 5 5.5 6 6.5 7 7.5
T
= 125ºC
J
25ºC
- 40ºC
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrin s ic Diode
300
250
200
150
- Amperes
S
I
100
50
0
0.4 0.6 0.8 1 1.2 1.4 1.6
T
J
= 125ºC
TJ = 25ºC
VSD - Volts
Fig. 8. Transconductance
150
135
120
105
T
= - 40ºC
J
90
25ºC
125 ºC
75
- Siemens
f s
60
g
45
30
15
0
0 20 40 60 80 100 120 140 160 180
ID - Am pere s
Fig. 10. Gate Charge
10
V
= 250V
DS
9
8
7
6
5
- Volts
GS
V
4
3
2
1
0
= 50A
I
D
= 10mA
I
G
0 25 50 75 100 125 150 175 200 225 250
QG - NanoCoulombs
Fig. 11. Capacitance
100,000
f = 1 MHz
C
iss
10,000
C
oss
1,000
Capacitance - PicoFarads
C
rss
100
0 5 10 15 20 25 30 35 40
VDS - Vo lts
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 12. Forward-Bias Safe Operating Area
1,000
R
Limit
DS(on)
100
- Amperes
D
I
10
TJ = 150ºC
T
= 25ºC
C
1
10 100 1000
DC
VDS - Volts
25µs
100µs
1ms
10ms
Page 5
IXFL 100N50P
Fig. 13. Maximum Transient Thermal Resistance
1.000
0.100
- ºC / W
(th)JC
R
0.010
0.001
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
© 2006 IXYS All rights reserved
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