Page 1
PolarHT
TM
HiPerFET
Power MOSFET
ISOPLUS220
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Fast Recovery Diode, Avalanche Rated
TM
IXFC 96N15P
V
I
R
t
D25
rr
DSS
DS(on)
= 150 V
=42A
=26m
ΩΩ
Ω
ΩΩ
< 200 ns
ISOPLUS 220
E153432
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
F
C
V
ISOL
Weight 3g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
TJ= 25°C to 175°C 150 V
TJ= 25°C to 175°C; RGS = 1 MΩ 150 V
Continuous ±20 V
G
Transient ±30 V
TC= 25°C42A
TC= 25°C, pulse width limited by T
JM
250 A
TC= 25°C60A
TC= 25°C40mJ
TC= 25°C 1.0 J
≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ V
S
TJ≤ 175°C, RG = 4 Ω
, 10 V/ns
DSS
Features
z
Silicon chip on Direct-Copper-Bond
TC= 25°C 120 W
- High power dissipation
-55 ... +175 °C
175 °C
-55 ... +150 °C
1.6 mm (0.062 in.) from case for 10 s 300 °C
Mounting force 11...65/2.4...11 N/lb
50/60 Hz, 1 minute 2500 ~V
VGS= 0 V, ID = 250 μA 150 V
VDS= VGS, ID = 4 mA 3.0 5.0 V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= V
DSS
25 μA
VGS= 0 V TJ = 150 °C 300 μA
VGS= 10 V, ID = 48 A, Note 1 26 mΩ
- Isolated mounting surface
- 2500V electrical isolation
z
Low drain to tab capacitance(<35pF)
z
Low R
z
Rugged polysilicon gate cell structure
z
Unclamped Inductive Switching (UIS)
rated
z
Fast intrinsic Rectifier
Applications
z
DC-DC converters
z
Battery chargers
z
Switched-mode and resonant-mode
power supplies
z
DC choppers
z
AC motor control
Advantages
z
Easy assembly: no screws, or isolation
foils required
z
Space savings
z
High power density
z
Low collector capacitance to ground
(low EMI)
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
TM
D
S
Isolated back surface*
G = Gate D = Drain
S = Source
substrate
HDMOSTM process
DS (on)
© 2006 IXYS All rights reserved
DS99240E(03/06)
Page 2
IXFC 96N15P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCS
VDS= 10 V; ID = 48 A, Note 1 35 45 S
3500 pF
VGS = 0 V, VDS = 25 V, f = 1 MHz 1000 pF
280 pF
30 ns
VGS = 10 V, VDS = 0.5 V
, ID = 48 A 33 ns
DSS
RG = 4 Ω (External) 66 ns
18 ns
110 nC
VGS= 10 V, VDS = 0.5 V
, ID = 48 A 26 nC
DSS
59 nC
1.25K/W
(TO-247, PLUS220) 0.21 K/W
Source-Drain Diode Characteristic Values
(T
Symbol Test Conditions Min. Typ. Max.
= 25°C, unless otherwise specified)
J
ISOPLUS220
TM
(IXFC) Outline
Note:
Bottom heatsink (Pin 4) is
electrically isolated from Pin
1,2, or 3.
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
VGS = 0 V 96 A
Repetitive 250 A
IF = IS, VGS = 0 V, 1.5 V
IF = 25 A 200 ns
-di/dt = 100 A/μs 600 nC
VR = 100 V, VGS = 0 V 6 A
Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
Ref: IXYS CO 0177 R0
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
Page 3
d
d
IXFC 96N15P
Fig. 1. Output Characteri stic s
º
C
@ 25
100
V
= 10V
90
80
70
60
50
- Amperes
40
D
I
30
20
10
0
00.511.522.5
9V
V
D S
GS
8V
7V
6V
- Volts
Fig. 3. Output Characteristics
º
= 10V
GS
- Volts
C
8V
7V
6V
5V
@ 150
100
90
80
70
60
50
- Amperes
40
D
I
30
20
10
0
00.511.522.533.544.555.5
V
9V
V
D S
Fig. 2. Extended Output Characteristics
º
C
@ 25
200
V
= 10V
GS
175
150
125
100
- Amperes
75
D
I
50
25
0
9V
8V
7V
6V
0 2 4 6 8101214161820
Fig. 4. R
V
- Volts
D S
N ormalized to 0.5 I
DS(on
)
ID = 48 A
Value vs. Junction Temperature
2.8
- Normal i z e
R
D S ( o n )
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
VGS = 10V
2
I
= 96A
D
ID = 48A
1
-50 -25 0 25 50 75 100 125 150 175
T
- Degrees Centigrade
J
D25
Fig. 5. R
0.5 I
3.8
3.4
3
2.6
2.2
- Normal i z e
1.8
D S ( o n )
1.4
R
1
0.6
0 50 100 150 200 250
ID = 48 A
VGS = 15V
N ormalized to
DS(on)
Value vs. I
D25
I D - Amperes
D
T
= 175ºC
J
VGS = 10V
T
J
= 25ºC
Fig. 6. Drain Current vs. Case
Fig. 6. Drain Current vs. Case
Temper atur e
80
45
40
70
Ext ernal Lead C urrent
Limit
35
60
30
50
25
40
20
- Amperes
- A mp eres
D
30
D
I
I
15
20
10
10
5
0
0
-50 -25 0 25 50 75 100 125 150 175
-50 -25 0 25 50 75 100 125 150 175
Tempe r ature
T
- Degrees Centigrade
C
T
- Degrees Centigrade
C
© 2006 IXYS All rights reserved
Page 4
IXFC 96N15P
Fig. 7. Input Admittance
180
160
140
120
100
80
- Amperes
D
I
60
TJ = 150ºC
40
25ºC
-40ºC
20
0
45678910
V
- Vol ts
G S
Fig. 9. Source Current vs.
Source-To-Drain Voltage
300
250
200
150
- Amperes
S
I
100
T
= 150ºC
50
0
J
T
= 25ºC
J
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
V
- Vol ts
S D
Fig. 8. Transconductance
TJ = -40 ºC
60
25ºC
150ºC
50
40
30
- S i em ens
f s
g
20
10
0
0 25 50 75 100 125 150 175 200
I
- Amperes
D
Fig. 10. G ate Charge
10
V
DS
I
= 48A
D
I
= 10m A
G
= 75V
9
8
7
6
5
- V olts
G S
4
V
3
2
1
0
0 102030405060708090100110
Q G - nanoCoulombs
Fig. 11. Capacitance
10000
f = 1MHz
C
iss
1000
C
oss
Capacitance - picoFarads
C
rss
100
0 5 10 15 20 25 30 35 40
VDS - Vol ts
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 12. Forward-Bias
Fig. 12. Forward-Bias
Sa fe Oper ating Area
Safe Operating Area
1000
1000
R
Limit
DS(on)
R
Limit
DS(on)
100
100
- Amperes
- Amperes
D
D
I
I
10
10
TJ = 175ºC
TJ = 175ºC
T
= 25ºC
C
= 25ºC
T
C
1
1
1 10 100 1000
1 10 100 1000
V
DC
D S
V
DC
D S
- Volts
- V olts
25µs
100µs
1ms
10ms
25µs
100µs
1m s
10m s
Page 5
Fig. 13. Maximum Transient Thermal Resistance
10.00
1.00
ºC / W
-
( t h ) J C
R
0.10
0.01
0.1 1 10 100 1000
P ulse Width - milliseconds
IXFC 96N15P
© 2006 IXYS All rights reserved
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