Page 1
PolarHT
TM
HiPerFET
IXFC 74N20P
Power MOSFET
ISOPLUS220
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Fast Recovery Diode, Avalanche
Rated
Symbol Test Conditions Maximum Ratings
TM
V
DSS
I
D25
R
DS(on)
t
rr
ISOPLUS 220
E153432
= 200 V
=35A
=36m
≤≤
≤ 200 ns
≤≤
TM
ΩΩ
Ω
ΩΩ
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
F
C
Weight 3g
TJ= 25°C to 175°C 200 V
TJ= 25°C to 175°C; RGS = 1 MΩ 200 V
Continuous ±20 V
G
Transient ±30 V
TC= 25°C35A
TC= 25°C, pulse width limited by T
JM
200 A
TC= 25°C60A
TC= 25°C40mJ
TC= 25°C 1.0 J
≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ V
S
, 10 V/ns
DSS
TJ≤ 150°C, RG = 4 Ω
TC= 25°C 120 W
-55 ... +175 °C
175 °C
-55 ... +150 °C
1.6 mm (0.062 in.) from case for 10 s 300 °C
50/60 Hz, RMS, I
≤ 1 mA, t = 1 minute 2500 V~
ISOL
Mounting Force 11..65 / 2.5..15 N/lb
Features
z
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z
Low drain to tab capacitance(<35pF)
z
Low R
z
Rugged polysilicon gate cell structure
z
Unclamped Inductive Switching (UIS)
rated
z
Fast intrinsic Rectifier
Applications
z
DC-DC converters
z
Battery chargers
z
Switched-mode and resonant-mode
power supplies
z
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BV
V
I
GSS
I
DSS
DSS
GS(th)
VGS= 0 V, ID = 250 μA 200 V
VDS= VGS, ID = 4 mA 2.5 5.0 V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= V
DSS
25 μA
VGS= 0 V TJ = 125°C 250 μA
DC choppers
z
AC motor control
Advantages
z
Easy assembly: no screws, or isolation
foils required
z
Space savings
z
High power density
z
Low collector capacitance to ground
(low EMI)
D
S
Isolated back surface*
G = Gate D = Drain
S = Source
HDMOSTM process
DS (on)
R
DS(on)
VGS= 10 V, ID = 37 A 36 mΩ
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
© 2006 IXYS All rights reserved
DS99243E(03/06)
Page 2
IXFC 74N20P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCS
VDS= 10 V; ID = 37 A, pulse test 30 44 S
3300 pF
VGS = 0 V, VDS = 25 V, f = 1 MHz 770 pF
190 pF
23 ns
VGS = 10 V, VDS = 0.5 V
, ID = 74 A 21 ns
DSS
RG = 4 Ω (External) 60 ns
21 ns
107 nC
VGS= 10 V, VDS = 0.5 V
, ID = 37 A 24 nC
DSS
52 nC
1.25K/W
0.21 K/W
Source-Drain Diode Characteristic Values
(T
Symbol Test Conditions Min. Typ. Max.
= 25°C, unless otherwise specified)
J
ISOPLUS220
TM
(IXFC) Outline
Note:
Bottom heatsink (Pin 4) is
electrically isolated from Pin
1,2, or 3.
I
S
I
SM
V
SD
VGS = 0 V 74 A
Repetitive 180 A
IF = IS, VGS = 0 V, 1.5 V
Ref: IXYS CO 0177 R0
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
t
rr
Q
RM
I
RM
IF = 25 A, -di/dt = 100 A/μs 200 ns
VR = 100 V, VGS = 0 V 0.4 μC
6A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
Page 3
IXFC 74N20P
Fig. 1. Output Character istics
º
C
@ 25
80
V
= 10V
GS
70
60
50
40
- Amperes
30
D
I
20
10
0
0 0.5 1 1.5 2 2.5 3 3.5
9V
8V
V
D S
7V
6V
5V
- Volts
Fig. 3. Output Characteristics
º
80
70
60
50
@ 150
V
GS
9V
8V
= 10V
C
7V
Fig. 2. Extended Output Characteristics
º
C
@ 25
200
V
= 10V
GS
180
160
140
120
100
80
- Amperes
D
I
60
40
20
0
0 2 4 6 8101214161820
9V
Fig. 4. R
8V
7V
6V
5V
V
- Volts
D S
Nor m aliz ed to 0.5 I
DS(on
)
Value vs. Junction Tem perature
3
2.6
2.2
VGS = 10V
D25
40
- Amperes
D
30
I
20
10
0
01234567
V
D S
Fig. 5. R
5
4.5
4
3.5
3
- Normalized
2.5
2
VGS = 15V
1
0 20 40 60 80 100 120 140 160 180 200
R
D S ( o n )
1.5
0.5
0.5 I
DS(on)
Value vs. I
D25
6V
5V
- Volts
Nor m aliz ed to
D
T
= 175ºC
J
VGS = 10V
T
J
I D - Amperes
= 25ºC
I
1.8
- No rmalized
1.4
D S ( o n )
R
1
0.6
-50 -25 0 25 50 75 100 125 150 175
T
- Degrees Centigrade
J
D
= 74A
I
D
= 37A
Fig. 6. Drain Curre nt vs. Case
Tem pe rature
40
35
30
25
20
- Amperes
15
D
I
10
5
0
-50 -25 0 25 50 75 100 125 150 175
T
- Degrees Centigrade
C
© 2006 IXYS All rights reserved
Page 4
IXFC 74N20P
Fig. 7. Input A dmittance
100
90
80
70
60
50
- A mpe res
40
D
I
30
20
10
TJ = 150ºC
25ºC
-40ºC
0
3.544.555.566.57
V
G S
- Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
200
180
160
140
120
100
- A mpe re s
80
S
I
60
40
20
0
T
= 150ºC
J
T
= 25ºC
J
0.4 0.6 0.8 1 1.2 1.4
V
S D
- Volts
Fig. 11. Capacitance
10000
f = 1MHz
C
iss
C
1000
Capacitance - picoFarads
100
0 5 10 15 20 25 30 35 40
V
- Volts
D S
oss
C
rss
Fig. 8. Transconductance
60
50
40
30
TJ = -40ºC
25ºC
150ºC
- Siemens
f s
20
g
10
0
0 20406080100120
I
- Amperes
D
Fig. 10. Gate Charge
10
9
V
= 100V
DS
I
8
7
6
5
- V o lts
G S
4
V
3
2
1
0
= 37A
D
I
= 10mA
G
0 102030405060708090100110
Q G - nanoCoulombs
Fig. 12. Forw a rd-Bias
Fig. 12. Forw a rd-Bias
Fig. 12. Forw ard-Bias
Safe Operating Ar ea
Safe Operating Area
1000
1000
1000
R
DS(on)
R
DS(on)
R
100
100
100
- Amperes
- Amperes
- Amperes
D
D
D
I
I
I
10
10
DS(on)
10
TJ = 175ºC
TJ = 175ºC
T
T
1
1
1
1 10 100 1000
1 10 100 1000
10 100 1000
Safe Operating Area
Limit
Limit
Limit
DC
= 25ºC
= 25ºC
C
C
V
V
V
D S
D S
D S
DC
DC
- Volts
- Volts
- Volts
TJ = 175ºC
T
25µs
100µs
1ms
10ms
= 25ºC
C
25µs
25µs
100µs
100µs
1ms
1m s
10ms
10ms
IXYS reserves the right to change limits, test conditions, and dimensions.
Page 5
Fig. 13. Maximum Transient Thermal Resistance
10.00
1.00
ºC / W
-
( t h ) J C
R
0.10
0.01
0.1 1 10 100 1000
P ulse Width - milliseconds
IXFC 74N20P
© 2006 IXYS All rights reserved
IXYS REF: T_74N20P (6S) 6-15-05-D.xls
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