Page 1
PolarHV
TM
HiPerFET
Power MOSFET
ISOPLUS 220
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TM
IXFC 26N50P
V
I
D25
R
trr
DSS
DS(on)
= 500 V
=15 A
≤≤
≤ 260 m
≤≤
≤≤
≤ 250 ns
≤≤
ΩΩ
Ω
ΩΩ
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
F
C
Weight 2g
Symbol Test Conditions Characteristic Values
(TJ = 25° C, unless otherwise specified) Min. Typ. Max.
BV
DSS
V
GS(th)
I
GSS
I
DSS
TJ= 25° C to 150° C 500 V
TJ= 25° C to 150° C; RGS = 1 MΩ 500 V
Continuous ±30 V
Transient ±40 V
TC= 25° C15A
TC= 25° C, pulse width limited by T
TC= 25° C26A
TC= 25° C40mJ
TC= 25° C 1.0 J
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
TJ≤ 150° C, RG = 4 Ω
TC= 25° C 130 W
1.6 mm (0.062 in.) from case for 10 s 300 °C
50/60 Hz, RMS, t = 1, leads-to-tab 2500 V~
Mounting Force 11..65/2.5..15 N/lb
VGS= 0 V, ID = 250 µA 500 V
VDS= VGS, ID = 4 mA 3.0 5.5 V
VGS= ±30 VDC, VDS = 0 ±100 nA
VDS= V
VGS= 0 V TJ = 125° C 250 µA
DSS
JM
, 20 V/ns
DSS
-55 ... +150 °C
-55 ... +150 °C
78 A
150 °C
25 µA
ISOPLUS220
G
Features
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
Low drain to tab capacitance(<30pF)
Applications
l
DC-DC converters
l
Battery chargers
l
Switched-mode and resonant-mode
power supplies
l
DC choppers
l
AC motor control
Advantages
l
Easy assembly
l
Space savings
l
High power density
TM
(IXFC)
E153432
D
S
G = Gate D = Drain
S = Source
(Isolated Tab)
R
DS(on)
© 2006 IXYS All rights reserved
VGS= 10 V, ID = I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
T
260 m Ω
DS99310E(03/06)
Page 2
Symbol Test Conditions Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCS
VDS= 10 V; ID = IT, pulse test 18 28 S
3600 pF
VGS = 0 V, VDS = 25 V, f = 1 MHz 380 pF
48 pF
20 ns
VGS = 10 V, VDS = 0.5 V
DSS
, ID = I
T
25 ns
RG = 4 Ω (External) 58 ns
20 ns
65 nC
VGS= 10 V, VDS = 0.5 V
DSS
, ID = I
T
20 nC
20 nC
0.95° C/W
0.21 ° C/W
IXFC 26N50P
ISOPLUS220 Outline
Source-Drain Diode Characteristic Values
(T
Symbol Test Conditions Min. Typ. Max.
I
S
I
SM
V
SD
VGS = 0 V 26 A
Repetitive 78 A
IF = IS, VGS = 0 V, 1.5 V
= 25° C, unless otherwise specified)
J
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t
rr
IF = 25 A 250 ns
-di/dt = 100 A/µs
Q
RM
Note: Test Current I
VR = 100 V, VGS = 0 V 0.3 µC
= 13A
T
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
Page 3
IXFC 26N50P
Fig. 1. Output Characteristics
@ 25ºC
26
24
22
20
18
16
14
12
- Ampe res
D
10
I
8
6
4
2
0
01234567
V
GS
8V
7V
VDS - Volts
= 10V
6V
5V
Fig. 3. Output Characteristics
@ 125ºC
26
V
= 10V
GS
24
22
20
18
16
14
12
- Ampe res
D
10
I
8
6
4
2
0
0 2 4 6 8 10 12 14 16
VDS - Volts
7V
6V
5V
Fig. 2. Extended Output Characteristics
@ 25ºC
60
55
50
45
40
35
30
- Amperes
25
D
I
20
15
10
5
0
0 3 6 9 12 15 18 21 24 27 30
Fig. 4. R
DS(on)
V
= 10V
GS
8 V
7V
6V
5V
VDS - Vo lts
Normalized to ID = 13A Value
vs. Junction Temperature
3.1
V
= 10V
GS
2.8
2.5
2.2
1.9
- Normalized
1.6
1.3
DS(on)
R
1
0.7
0.4
-50 -25 0 25 50 75 100 125 150
I D = 26A
I D = 13A
TJ - Degrees Centigrade
Fig. 5. R
Norm a lized to ID = 13A Value
DS(on)
vs. Drain Current
3.2
3
V
= 10V
GS
2.8
2.6
2.4
2.2
2
- Normalized
1.8
1.6
DS(on)
R
1.4
1.2
1
0.8
0 5 10 15 20 25 30 35 40 45 50 55 60
© 2006 IXYS All rights reserved
ID - Ampe res
TJ = 125ºC
TJ = 25ºC
Fig. 6. Maximum Drain Current vs.
Case Temperature
16
14
12
10
8
- Amperes
D
I
6
4
2
0
-50 -25 0 25 50 75 100 125 150
TJ - Degrees Centigrade
Page 4
IXFC 26N50P
Fig. 7. Input Admittance
50
45
40
35
30
25
- Amperes
20
D
I
15
10
5
0
3.544.555.566.57
T
= 125ºC
J
25ºC
- 40ºC
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrin s ic Diod e
80
70
60
50
40
- Amperes
S
I
30
20
10
0
0.40.50.60.70.80.9 1 1.1
T
= 125ºC
J
VSD - Volts
TJ = 25ºC
Fig. 8. Transconductance
50
45
40
T
= - 40ºC
J
35
25ºC
125ºC
30
25
- Siemens
f s
20
g
15
10
5
0
0 5 10 15 20 25 30 35 40 45 50 55 60
ID - Am pe res
Fig. 10. Gate Charge
10
V
= 250V
DS
9
8
7
6
5
- Volts
GS
4
V
3
2
1
0
= 13A
I
D
= 10mA
I
G
0 5 10 15 20 25 30 35 40 45 50 55 60 65
QG - NanoCoulombs
Fig. 11. Capacitance
10,000
1,000
Capacitance - PicoFarads
f = 1 MHz
C
iss
C
oss
100
C
rss
10
0 5 10 15 20 25 30 35 40
VDS - Vo lts
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 12. Forward-Bias Safe Operating Area
100
R
Limit
DS(on)
25µs
100µs
10
- Amperes
D
I
TJ = 150ºC
= 25ºC
T
C
1
10 100 1000
DC
VDS - Volts
1ms
10ms
Page 5
IXFC 26N50P
Fig. 13. Maximum Transient Thermal Resistance
1.00
0.10
- ºC / W
(th)JC
R
0.01
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
© 2006 IXYS All rights reserved
IXYS REF: T_26N50P (6J) 02-09-06-B.xls
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