Page 1
PolarHVTM HiPerFET
IXFC 22N60P
Power MOSFET
DSS
TM
DSS
ISOPLUS220
JM
-55 ... +150 °C
-55 ... +150 °C
66 A
10 V/ns
150 °C
Features
l
l
l
l
l
l
Applications
l
l
l
l
l
Advantages
l
l
l
25 µA
l
ISOPLUS220
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
F
C
Weight 2 g
Symbol Test Conditions Characteristic Values
(TJ = 25° C unless otherwise specified) Min. Typ. Max.
BV
DSS
V
GS(th)
I
GSS
I
DSS
TJ= 25° C to 150° C 600 V
TJ= 25° C to 150° C; RGS = 1 MΩ 600 V
Continuous ± 30 V
Tranisent ± 40 V
TC= 25° C12A
TC= 25° C, pulse width limited by T
TC= 25° C22A
TC= 25° C40mJ
TC= 25° C 1.0 J
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
TJ≤ 150° C, RG = 4 Ω
TC= 25° C 130 W
1.6 mm (0.062 in.) from case for 10 s 300 ° C
50/60 Hz, RMS t = 1 minute leads-to-tab 2500 V~
Mounting Force 11..65/2.5..15 N/lb
VGS= 0 V, ID = 250 µA 600 V
VDS= VGS, ID = 4 mA 3.0 5.0 V
VGS= ± 30 VDC, VDS = 0 ±100 nA
VDS= V
VGS= 0 V TJ = 125° C 250 µA
V
I
D25
R
t
rr
DSS
DS(on)
= 600 V
=12 A
≤≤
≤ 360 m
≤≤
≤≤
≤ 200 ns
≤≤
TM
(IXFC)
ΩΩ
Ω
ΩΩ
E153432
G
D
S
G = Gate D = Drain
S = Source
(Isolated back surface*)
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<35pF)
Low R
HDMOSTM process
DS (on)
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Easy assembly: no screws, or isolation
foils required
Space savings
High power density
Low collector capacitance to ground
(low EMI)
R
DS(on)
© 2006 IXYS All rights reserved
VGS= 10 V, ID = IT , Note 1 360 m Ω
DS99439E(02/06)
Page 2
IXFC 22N60P
Symbol Test Conditions Characteristic Values
(TJ = 25° C unless otherwise specified)
Min. Typ. Max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCS
VDS= 20 V; ID = IT , Note 1 13 20 S
4000 pF
VGS = 0 V, VDS = 25 V, f = 1 MHz 320 pF
22 pF
20 ns
VGS= 10 V, VDS = 0.5 V
DSS
, ID = I
T
20 ns
RG= 4 Ω (External) 60 ns
23 ns
58 nC
VGS= 10 V, VDS = 0.5 V
DSS
, ID = I
T
23 nC
20 nC
0.95 ° C/W
0.21 ° C/W
Source-Drain Diode Characteristic Values
= 25° C unless otherwise specified)
(T
Symbol Test Conditions Min. Typ. Max.
J
ISOPLUS220
TM
(IXFC) Outline
Note:
Bottom heatsink (Pin 4) is
electrically isolated from Pin
1,2, or 3.
I
S
I
SM
V
SD
t
rr
Q
RM
VGS = 0 V 12 A
Repetitive 66 A
IF = IS, VGS = 0 V, 1.5 V
IF = 25A, -di/dt = 100 A/µs 200 ns
VR = 100 V, VGS = 0 V 1.0 µC
Notes:
1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %;
2. Test current I
= 11A.
T
Ref: IXYS CO 0177 R0
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
Page 3
IXFC 22N60P
Fig. 1. Output Characteristics
º
@ 25
C
22
V
= 10V
GS
20
18
16
14
12
10
- Amperes
D
8
I
6
4
2
0
0123456789
V
D S
8V
7.5V
7V
6V
- Volts
Fig. 3. Output Characte r is tics
º
V
= 10V
GS
8V
7V
- Volts
D S
C
6.5V
6V
5.5V
5V
@ 125
22
20
18
16
14
12
10
- Amperes
D
8
I
6
4
2
0
0 2 4 6 8 101214 1618 20
V
Fig. 2. Extended Output Characteristics
º
@ 25
C
45
V
= 10V
GS
40
35
30
25
20
- Amperes
D
15
I
10
5
0
0 3 6 9 12 15 18 21 24 27 30
Fig . 4. R
9V
8V
V
- Volts
D S
Norm alize d to ID = 11A
DS(on
)
7.5V
7V
6.5V
6V
Value vs. Junction Tem perature
3.4
- Normalized
D S ( o n )
R
3.1
2.8
2.5
2.2
1.9
1.6
1.3
0.7
0.4
VGS = 10V
I
= 22A
D
I
= 11A
D
1
-50 -25 0 25 50 75 100 125 150
T
- Degrees Centigrade
J
Fig . 5. R
= 11A Value vs . Drain Curre n t
I
D
VGS = 10V
0 5 10 15 20 25 30 35 40 45
- Normalized
R
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
D S ( o n )
1.2
1
0.8
DS(on)
© 2006 IXYS All rights reserved
Norm alize d to
T
I D - Amperes
= 125ºC
J
T
J
= 25ºC
Fig. 6. Drain Curre nt vs . Cas e
Tem perature
14
12
10
8
6
- Amperes
D
I
4
2
0
-50 -25 0 25 50 75 100 125 150
T
- Degrees Centigrade
C
Page 4
IXFC 22N60P
Fig. 7. Input Admittance
30
27
24
21
18
15
- Amperes
12
D
I
TJ = 125ºC
9
25
6
-40
3
0
4.5 5 5.5 6 6.5 7 7.5 8
º
C
º
C
V
- Volts
G S
Fig. 9. Source Current vs .
Source-To-Drain Voltage
70
60
50
40
30
- Amperes
S
I
20
10
0
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
T
= 125ºC
J
V
S D
- Volts
T
J
= 25ºC
Fig. 8. Transconductance
30
27
TJ = -40ºC
24
º
25
21
125
18
15
- Siemens
12
f s
g
9
6
3
0
0 3 6 9 12 15 18 21 24 27 30
C
º
C
I
- Amperes
D
Fig. 10. Gate Char ge
10
V
DS
I
= 11A
D
= 10m A
I
G
= 300V
9
8
7
6
5
- Volts
G S
4
V
3
2
1
0
0 102030405060
Q G - nanoCoulombs
Fig. 11. Capacitance
10000
f = 1MHz
C
iss
1000
C
oss
100
C
Capacitance - picoFarads
10
0 5 10 15 20 25 30 35 40
V
- Volts
D S
rss
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 12. Forw ard-Bias
Safe Ope r atin g Ar e a
100
R
Limit
DS(on)
10
- Amperes
D
I
1
TJ = 150ºC
T
= 25ºC
C
0.1
10 100 1000
V
D S
DC
- Volts
25µs
100µs
1ms
10ms
Page 5
IXFC 22N60P
Fig. 13. Maxim um Tr ans ient The rm al Resis tance
1.00
C / W
º
-
0.10
( t h ) J C
R
0.01
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
© 2006 IXYS All rights reserved
IXYS REF: T_22N60P (6J) 02-17-06-B
Loading...