Page 1
PolarHVTM HiPerFET
IXFC 16N50P
Power MOSFET
ISOPLUS220
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
Symbol Test Conditions Maximum Ratings
TM
V
DSS
I
D25
R
DS(on)
t
rr
ISOPLUS220
E153432
= 500 V
= 10 A
≤≤
≤ 450 m
≤≤
≤≤
≤
200 ns
≤≤
TM
(IXFC)
ΩΩ
Ω
ΩΩ
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
V
ISOL
F
C
TJ= 25° C to 150° C 500 V
TJ= 25° C to 150° C; RGS = 1 MΩ 500 V
Continuous ± 30 V
Transient ± 40 V
G
TC= 25° C10A
TC= 25° C, pulse width limited by T
JM
TC= 25° C10A
TC= 25° C25mJ
35 A
G = Gate D = Drain
S = Source
TC= 25° C 750 mJ
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
TJ≤ 150° C, RG = 10 Ω
TC= 25° C 125 W
1.6 mm (0.062 in.) from case for 10 s 300 °C
Plastic body for 10 s 260 °C
50/60 Hz, RMS, t = 1, leads-to-tab 2500 V~
Mounting Force 11..65/2.5..15 N/lb
, 10 V/ns
DSS
-55 ... +150 °C
150 °C
-55 ... +150 °C
Features
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
Low drain to tab capacitance(<35pF)
l
Low R
l
Rugged polysilicon gate cell structure
l
Unclamped Inductive Switching (UIS)
rated
l
Fast intrinsic Rectifier
Weight 2g
Applications
l
DC-DC converters
l
Battery chargers
l
Symbol Test Conditions Characteristic Values
(TJ = 25° C unless otherwise specified) Min. Typ. Max.
BV
V
I
GSS
I
DSS
DSS
GS(th)
VGS= 0 V, ID = 250 µA 500 V
VDS= VGS, ID = 2.5 mA 3.0 5.5 V
VGS= ±30 V, VDS = 0 V ±100 nA
VDS= V
DSS
5 µA
VGS= 0 V TJ = 125° C50µA
R
DS(on)
VGS= 10 V, ID = I
(Note 1) 450 mΩ
T,
Switched-mode and resonant-mode
power supplies
l
DC choppers
l
AC motor control
Advantages
l
Easy assembly: no screws, or isolation
foils required
l
Space savings
l
High power density
l
Low collector capacitance to ground
(low EMI)
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
D
S
HDMOSTM process
DS (on)
Isolated back surface
© 2006 IXYS All rights reserved
DS99411E(03/06)
Page 2
IXFC 16N50P
Symbol Test Conditions Characteristic Values
(TJ = 25° C unless otherwise specified)
Min. Typ. Max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCS
VDS= 20 V; ID = IT, pulse test 9 16 S
2250 pF
VGS = 0 V, VDS = 25 V, f = 1 MHz 240 pF
12 pF
23 ns
VGS = 10 V, VDS = 0.5 V
DSS
, ID = I
T
25 ns
RG = 10 Ω (External) 70 ns
22 ns
43 nC
VGS= 10 V, VDS = 0.5 V
DSS
, ID = I
T
15 nC
12 nC
1.0 ° C/W
0.21 ° C/W
ISOPLUS220
TM
(IXFC) Outline
Note:
Bottom heatsink (Pin 4) is
electrically isolated from Pin
1,2, or 3.
Source-Drain Diode Characteristic Values
(TJ = 25° C unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
I
S
I
SM
V
SD
VGS = 0 V 16 A
Repetitive 40 A
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t
rr
I
RM
Q
RM
IF = 16 A, -di/dt = 100 A/µs 200 ns
VR = 100 V, VGS = 0 V 6 A
0.6 µC
Note 1: Test Current IT = 8 A
Ref: IXYS CO 0177 R0
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
Page 3
IXFC 16N50P
Fig. 1. Output Characteristics
@ 25ºC
20
V
= 10V
GS
18
16
14
12
10
- Amperes
8
D
I
6
4
2
0
012345678910
8 V
7 V
6V
VDS - Vo lts
Fig. 3. R
Normalized to ID = 8A vs.
DS(on)
Junction Temperature
3.1
V
= 10V
GS
2.8
2.5
2.2
1.9
- Normalized
1.6
1.3
DS(on)
R
1
0.7
0.4
I D = 16A
I D = 8A
-50 -25 0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 2. Output Characteristics
@ 125ºC
20
18
16
14
12
10
- Amperes
8
D
I
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20
Fig. 4. R
Normalized to ID = 8A vs. Drain
DS(on)
V
GS
8 V
7 V
VDS - Vo lts
= 10V
6V
5V
Current
2.8
V
= 10V
GS
2.6
2.4
2.2
2
1.8
- Normalized
1.6
DS(on)
1.4
R
1.2
1
0.8
TJ = 125ºC
TJ = 25ºC
02468101214161820
ID - Ampe res
Fig. 5. Maximum Drain Current vs.
Case Temperature
11
10
9
8
7
6
5
- Amperes
D
I
4
3
2
1
0
-50 -25 0 25 50 75 100 125 150
TJ - Degrees Centigrade
© 2006 IXYS All rights reserved
Fig. 6. Input Admittance
20
18
16
14
12
10
- Amperes
8
D
I
6
4
2
0
44.555.566.5 7
T
= 125ºC
J
25ºC
- 40ºC
VGS - Volts
Page 4
IXFC 16N50P
Fig. 7. Transconductance
26
24
22
20
18
T
= - 40ºC
J
16
25ºC
125ºC
14
12
- Siemens
f s
10
g
8
6
4
2
0
0 2 4 6 8 101214161820
ID - Am pe res
Fig. 9. Gate Charge
10
V
= 250V
DS
9
8
7
6
5
- Volts
GS
V
4
3
2
1
0
I
= 8A
D
I
= 10mA
G
0 5 10 15 20 25 30 35 40 45
QG - NanoCoulombs
Fig. 8. Forward Voltage Drop of
Intrin s ic Diod e
70
60
50
40
30
- Amp eres
S
I
T
= 125ºC
J
20
10
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
TJ = 25ºC
VSD - Volts
Fig. 10. Capacitance
10,000
f = 1 MHz
C
1,000
100
10
Capacitance - PicoFarads
1
0 5 10 15 20 25 30 35 40
VDS - Volts
iss
C
oss
C
rss
Fig. 11. Forward-Bias Safe Operating Area
100
R
Limit
DS(on)
25µs
10
- Amperes
D
I
1
TJ = 150ºC
= 25ºC
T
C
0
10 100 1000
DC
100µs
1ms
10m
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 12. Maximum Transient Thermal
10.00
1.00
- ºC / W
(th)JC
R
0.10
0.01
0.0001 0.001 0.01 0.1 1 10
Resistance
Pulse W idth - Seconds
IXYS REF: F_16N50P (57-745) 11-30-05-A.XLS
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