Page 1
PolarHVTM HiPerFET
Power MOSFET
ISOPLUS220
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
TM
IXFC 14N60P
V
I
D25
R
t
rr
DSS
DS(on)
= 600 V
=8A
≤≤
≤ 630 m
≤≤
≤≤
≤ 200 ns
≤≤
ΩΩ
Ω
ΩΩ
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
TJ= 25° C to 150° C 600 V
TJ= 25° C to 150° C; RGS = 1 MΩ 600 V
Continuous ± 30 V
Tranisent ± 40 V
TC= 25° C8A
TC= 25° C, pulse width limited by T
JM
42 A
TC= 25° C14A
TC= 25° C23mJ
TC= 25° C 0.9 J
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
DSS
10 V/ns
ISOPLUS220
G = Gate D = Drain
S = Source
Features
l
TJ≤ 150° C, RG = 4 Ω
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
F
C
Weight 2 g
Symbol Test Conditions Characteristic Values
TC= 25° C 100 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
1.6 mm (0.062 in.) from case for 10 s 300 ° C
50/60 Hz, RMS t = 1 minute leads-to-tab 2500 V~
Mounting Force 11..65/2.5..15 N/lb
l
l
l
l
l
Applications
l
l
l
l
l
(TJ = 25° C unless otherwise specified) Min. Typ. Max.
BV
V
I
GSS
I
DSS
DSS
GS(th)
VGS= 0 V, ID = 250 µA 600 V
VDS= VGS, ID = 1.5 mA 3.5 5.5 V
VGS= ± 30 VDC, VDS = 0 ±100 nA
VDS= V
DSS
5 µA
Advantages
l
l
l
l
VGS= 0 V TJ = 125° C50µA
TM
(IXFC)
E153432
G
D
S
(Isolated back surface)
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<35pF)
Low R
HDMOSTM process
DS (on)
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Easy assembly: no screws, or isolation
foils required
Space savings
High power density
Low collector capacitance to ground
(low EMI)
R
DS(on)
© 2006 IXYS All rights reserved
VGS= 10 V, ID = IT , Note 1 630 m Ω
DS99409E(02/06)
Page 2
IXFC 14N60P
Symbol Test Conditions Characteristic Values
(TJ = 25° C unless otherwise specified)
Min. Typ. Max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCS
VDS= 20 V; ID = IT , Note 1 7 13 S
2300 pF
VGS = 0 V, VDS = 25 V, f = 1 MHz 215 pF
13 pF
23 ns
VGS= 10 V, VDS = 0.5 V
DSS,ID
= I
T
27 ns
RG= 4 Ω (External) 70 ns
26 ns
38 nC
VGS= 10 V, VDS = 0.5 V
DSS
, ID = I
T
14 nC
12 nC
1.25 ° C/W
0.21 ° C/W
ISOPLUS220
TM
(IXFC) Outline
Note:
Bottom heatsink (Pin 4) is
electrically isolated from Pin
1,2, or 3.
Source-Drain Diode Characteristic Values
= 25° C unless otherwise specified)
(T
Symbol Test Conditions min. Typ. max.
I
S
I
SM
V
SD
t
rr
I
RM
Q
RM
VGS = 0 V 8 A
Repetitive 42 A
IF = IS, VGS = 0 V, Note 1 1.5 V
IF = 14A, -di/dt = 100 A/µs 200 ns
VR = 100 V, VGS = 0 V 6 A
J
1.0 µC
Notes:
1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %;
Test current I
= 7 A.
T
Ref: IXYS CO 0177 R0
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
Page 3
IXFC 14N60P
Fig. 1. Output Characteristics
@ 25ºC
14
V
= 10V
GS
12
10
8
6
- Amperes
D
I
4
2
0
012345678
9V
8V
7V
VDS - Volts
Fig. 3. Output Characteristics
@ 125ºC
- Amperes
I
14
12
10
8
6
D
4
V
= 10V
GS
8V
7V
Fig. 2. Extended Output Characteristics
@ 25ºC
30
V
= 10V
GS
27
24
21
18
15
- Amperes
12
D
I
9
6
3
0
0 3 6 9 12 15 18 21 24 27 30
9V
8V
7V
VDS - Volts
Fig. 4. R
Normalized to ID = 7A Value vs.
DS(on)
Junction Temperature
3.2
V
= 10V
GS
2.8
2.4
2
- Normalized
1.6
DS(on)
R
1.2
I D = 14A
I D = 7A
2
6V
0
024681012141618
VDS - Volts
Fig. 5. R
Normalized to ID = 7A Value vs.
DS(on)
Drain Current
3.2
V
= 10V
GS
2.8
2.4
2
- Normalized
DS(on)
1.6
R
1.2
0.8
0 3 6 9 12 15 18 21 24 27 30
ID - Am peres
TJ = 125ºC
TJ = 25ºC
0.8
0.4
-50 -25 0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Maximum Drain Current vs.
Case Temperature
9
8
7
6
5
4
- Amp eres
D
I
3
2
1
0
-50 -25 0 25 50 75 100 125 150
TC - Degre es C entigrade
© 2006 IXYS All rights reserved
Page 4
IXFC 14N60P
Fig. 7. Input Admittance
50
45
40
35
30
25
- Ampe res
20
D
I
15
10
5
0
55.566.577.588.599.5
T
= 125ºC
J
25ºC
- 40ºC
VGS - Vo lts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
50
45
40
35
30
25
- Amperes
20
S
I
15
10
5
0
0.3 0 .4 0.5 0 .6 0.7 0.8 0 .9 1 1.1 1 .2
T
= 125ºC
J
VSD - Vo lts
TJ = 25ºC
Fig. 8. Transconductance
27
24
T
= - 40ºC
J
21
25ºC
125 ºC
18
15
- Siemens
12
f s
g
9
6
3
0
0 5 10 15 20 25 30 35 40 45 50
ID - Ampe res
Fig. 10. Gate Charge
10
V
= 300V
DS
9
8
7
6
5
- Volts
GS
V
4
3
2
1
0
I
= 11A
D
I
= 10 mA
G
0 5 10 15 20 25 30 35 40
QG - NanoC oulom bs
Fig. 11. Capacitance
10,000
f = 1 MHz
C
1,000
100
10
Capacitance - PicoFarads
1
0 5 10 15 20 25 30 35 40
iss
C
oss
C
rss
VDS - Vo lts
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 12. Forward-Bias Safe Operating Area
100
R
Limit
DS(on)
10
1ms
- Amperes
D
I
1
TJ = 150ºC
= 25ºC
T
C
0
10 100 1000
DC
VDS - Volts
10ms
25µs
100µs
Page 5
IXFC 14N60P
Fig. 13. Maximum Transient Thermal Resistance
10.00
1.00
- ºC / W
(th)JC
R
0.10
0.01
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
© 2006 IXYS All rights reserved
IXYS REF: F_14N60P (5J) 02-27-06-C.xls
Loading...