Page 1
PolarHVTM HiPerFET
Power MOSFET
ISOPLUS220
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
TM
IXFC 110N10P
V
I
D25
R
t
rr
DSS
DS(on)
= 100 V
=60 A
≤≤
≤ 17 m
≤≤
≤≤
≤ 150 ns
≤≤
ΩΩ
Ω
ΩΩ
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
TJ= 25° C to 175° C 100 V
TJ= 25° C to 175° C; RGS = 1 MΩ 100 V
Continuous ±20 V
Transient ±30 V
TC= 25° C60A
TC= 25° C, pulse width limited by T
JM
250 A
TC= 25° C60A
TC= 25° C40mJ
TC= 25° C 1.0 J
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
, 10 V/ns
DSS
TJ≤ 150° C, RG = 4 Ω
P
T
T
T
T
T
V
F
D
J
JM
stg
L
SOLD
ISOL
C
TC= 25° C 120 W
-55 ... +175 °C
175 °C
-55 ... +150 °C
1.6 mm (0.062 in.) from case for 10 s 300 °C
Plastic body for 10 s 260 °C
50/60 Hz, RMS t = 1 minute leads-to-tab 2500 V~
Mounting Force 11..65 / 2.5..15 N/lb
Weight 2g
Symbol Test Conditions Characteristic Values
ISOPLUS220
G
G = Gate D = Drain
S = Source
Features
l
Silicon chip on Direct-Copper-Bond
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
Low drain to tab capacitance(<35pF)
l
Low R
l
Rugged polysilicon gate cell structure
l
Unclamped Inductive Switching (UIS)
rated
l
Fast intrinsic Rectifier
Applications
l
DC-DC converters
l
Battery chargers
l
Switched-mode and resonant-mode
power supplies
l
DC choppers
l
AC motor control
(TJ = 25° C, unless otherwise specified) Min. Typ. Max.
BV
V
I
GSS
I
DSS
DSS
GS(th)
VGS= 0 V, ID = 250 µA 100 V
VDS= VGS, ID = 4 mA 2.5 5.0 V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= V
DSS
25 µA
Advantages
l
Easy assembly: no screws, or isolation
foils required
l
Space savings
l
High power density
l
Low collector capacitance to ground
(low EMI)
VGS= 0 V TJ = 150° C 250 µA
TM
E153432
D
S
substrate
HDMOSTM process
DS (on)
(IXFC)
Isolated back surface
R
DS(on)
© 2006 IXYS All rights reserved
VGS= 10 V, ID = 55 A 17 m Ω
DS99370E(03/06)
Page 2
IXFC 110N10P
Symbol Test Conditions Characteristic Values
= 25° C, unless otherwise specified)
J
Min. Typ. Max.
3550 pF
440 pF
21 ns
25 ns
110 nC
62 nC
1.25° C/W
0.21 ° C/W
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCS
(T
VDS= 10 V; ID =55 A, Note 1 30 43 S
VGS = 0 V, VDS = 25 V, f = 1 MHz 1370 pF
VGS = 10 V, VDS = 0.5 V
, ID = 60 A 25 ns
DSS
RG = 4 Ω (External) 65 ns
VGS= 10 V, VDS = 0.5 V
, ID = 55 A 25 nC
DSS
Source-Drain Diode Characteristic Values
(T
Symbol Test Conditions Min. Typ. Max.
= 25° C, unless otherwise specified)
J
ISOPLUS220
TM
(IXFC) Outline
Note:
Bottom heatsink (Pin 4) is
electrically isolated from Pin
1,2, or 3.
I
S
I
SM
V
SD
VGS = 0 V 110 A
Repetitive 250 A
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t
rr
Q
RM
IF = 25 A, -di/dt = 100 A/µs 150 ns
VR = 50 V, VGS = 0 V 0.6 µC
Note: Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Ref: IXYS CO 0177 R0
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
Page 3
IXFC 110N10P
Fig. 1. Output Characteristics
º
@ 25
C
110
100
90
80
70
60
50
- Amperes
D
40
I
30
20
10
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
V
= 10V
GS
9V
V
- Volts
D S
8V
7V
6V
5V
Fig. 3. Output Characte r is tics
º
@ 150
110
100
90
80
70
60
50
- Amperes
D
40
I
30
20
10
0
00.511.522.533.54
V
GS
9V
V
= 10V
D S
C
8V
7V
6V
5V
- Volts
Fig. 2. Extende d Output Char acte ristics
º
@ 25
C
220
V
= 10V
GS
200
180
160
140
120
100
- Amperes
80
D
I
60
40
20
0
012345678910
Fig . 4. R
9V
8V
7V
6V
V
- Volts
D S
Norm alized to ID = 55A
DS(on
)
Value vs. Junction Tem perature
2.4
VGS = 10V
2
I
= 110A
D
ID = 55A
1
-50 -25 0 25 50 75 100 125 150 175
T
- Degrees Centigrade
J
- Normalized
D S ( o n )
R
2.2
1.8
1.6
1.4
1.2
0.8
0.6
Fig . 5. R
DS(on)
Value vs . Drain Curre n t
3
VGS = 10V
2.8
= 15V
V
- Normalized
R
2.6
2.4
2.2
1.8
1.6
1.4
D S ( o n )
1.2
0.8
0.6
GS
2
1
0 25 50 75 100 125 150 175 200 225 250
- - - -
© 2006 IXYS All rights reserved
Norm alized to ID = 55A
TJ = 175ºC
TJ = 25ºC
I D - Amperes
Fig. 6. Drain Current vs. Case
Tem perature
60
50
40
30
- Amperes
D
I
20
10
0
-50 -25 0 25 50 75 100 125 150 175
T
- Degrees Centigrade
C
Page 4
IXFC 110N10P
Fig. 7. Input Admittance
250
225
200
175
150
125
- Amperes
100
D
I
75
50
25
0
4567891011
V
G S
TJ = -40ºC
25
150
- Volts
º
C
º
C
Fig. 9. Sour ce Curre n t vs .
Source-To-Drain Voltage
350
300
250
200
150
- Amperes
S
I
100
T
= 150ºC
J
50
0
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
V
T
S D
J
= 25ºC
- Volts
Fig. 8. Transconductance
70
60
50
40
- Siemens
30
f s
g
20
10
0
0 50 100 150 200 250 300
I
- Amperes
D
TJ = -40ºC
º
25
º
150
C
C
Fig. 10. Gate Ch ar g e
10
V
DS
I
= 55A
D
= 10m A
I
G
= 50V
9
8
7
6
5
- Volts
G S
4
V
3
2
1
0
0 20406080100120
Q G - nanoCoulombs
Fig. 11. Capacitance
10000
C
iss
1000
Capacitanc e - picoFarads
f = 1MHz
100
0 5 10 15 20 25 30 35 40
C
oss
C
rss
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 12. Forw ard-Bias
Safe Operating Area
1000
R
Limit
DS(on)
25µs
100
- Amperes
D
I
10
TJ = 175ºC
= 25ºC
T
C
1
1 10 100 1000
DC
V
D S
- Volts
100µs
1ms
10ms
Page 5
IXFC 110N10P
Fig. 13. Maxim um Trans ie nt The r m al Resis tance
10.00
1.00
ºC / W
-
( t h ) J C
0.10
R
0.01
0.1 1 10 100 1000
Pulse Width - millis econds
© 2006 IXYS All rights reserved
IXYS REF: T_110N10P (6S) 6-15-05-A.xls
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