Page 1
PolarHV
TM
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFB 82N60P
V
I
D25
R
t
rr
= 600 V
DSS
= 82 A
≤≤
≤ 75 m
DS(on)
≤≤
≤≤
≤ 200 ns
≤≤
ΩΩ
Ω
ΩΩ
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DRMS
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
F
C
Weight 10 g
TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGS = 1 MΩ 600 V
Continuous ±30 V
Transient ±40 V
TC= 25°C82A
External lead current limit 75 A
TC= 25°C, pulse width limited by T
TC= 25°C82A
TC= 25°C 100 mJ
TC= 25°C5J
≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ V
S
TJ≤ 150°C, RG = 2 Ω
TC= 25°C 1250 W
1.6 mm (0.062 in.) from case for 10 s 300 °C
Plastic body for 10 s 260 °C
Mounting force 30..120/7.5...2.7 N/lb
JM
, 20 V/ns
DSS
-55 ... +150 °C
-55 ... +150 °C
200 A
150 °C
PLUS264TM (IXFB)
G
D
S
G = Gate D = Drain
S = Source TAB = Drain
Features
z
International standard packages
z
Fast recovery diode
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
Advantages
z
Plus 264TM package for clip or spring
z
Space savings
z
High power density
(TAB)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
© 2006 IXYS All rights reserved
VGS= 0 V, ID = 3 mA 600 V
VDS= VGS, ID = 8 mA 3.0 5.0 V
VGS= ±30 VDC, VDS = 0 ±200 nA
VDS= V
VGS= 0 V TJ = 125°C 2000 μA
VGS= 10 V, ID = 0.5 I
DSS
, Note 1 75 mΩ
D25
25 μA
DS99530E(08/06)
Page 2
IXFB 82N60P
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCS
J
VDS= 20 V; ID = 0.5 I
, Note 1 50 80 S
D25
VGS = 0 V, VDS = 25 V, f = 1 MHz 1490 pF
VGS= 10 V, VDS = 0.5 V
, ID =0.5 I
DSS
RG= 1 Ω (External) 79 ns
VGS= 10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
Min. Typ. Max.
D25
D25
23 nF
200 pF
28 ns
23 ns
24 ns
240 nC
96 nC
67 nC
0.10 °C/W
0.13 °C/W
Source-Drain Diode Characteristic Values
= 25°C, unless otherwise specified)
(T
Symbol Test Conditions Min. Typ. Max.
J
PLUS264TM (IXFB) Outline
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
VGS = 0 V 82 A
Repetitive 200 A
IF = IS, VGS = 0 V, Note 1 1.5 V
IF = 25A, -di/dt = 100 A/μs 200 ns
VR = 100V 0.6 μC
Notes:
1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
6.0 A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
Page 3
IXFB 82N60P
Fig. 1. Output Characteristics
@ 25ºC
90
V
= 10V
GS
80
70
60
50
40
- Amperes
D
I
30
20
10
0
00.511.522.533.544.555.56
8V
7V
6V
5V
VDS - Volts
Fig. 3. Output Characteristics
@ 125ºC
90
V
= 10V
GS
80
70
7V
Fig. 2. Extended Output Characteristics
@ 25ºC
180
160
140
120
100
80
- Amperes
D
I
60
40
20
0
0 2 4 6 8 101214161820
Fig. 4. R
DS(on)
V
= 10V
GS
8V
7V
6V
5V
VDS - Volts
Normalized to ID = 41A Value
vs. Junction Temperature
3.1
V
= 10V
GS
2.8
2.5
60
50
40
- Amperes
D
I
30
20
10
0
02468101214
6V
5V
VDS - Volts
Fig. 5. R
No rmalized to ID = 41A Value
DS(on)
vs. Drain Current
3
V
2.8
2.6
2.4
2.2
2
- Normalized
1.8
1.6
DS(on)
R
1.4
1.2
1
0.8
0 20 4 0 60 80 100 120 140 160 180
GS
= 10V
TJ = 125ºC
TJ = 25ºC
ID - Amperes
2.2
1.9
- Normalized
1.6
1.3
DS(on)
R
1
0.7
0.4
-50 -25 0 2 5 50 75 100 125 150
I D = 82A
I D = 41A
TJ - Degrees Centigrade
Fig. 6. Maximum Drain Current vs.
Case Temperature
90
Ext ernal Lead Current Limit
80
70
60
50
40
- Amperes
D
I
30
20
10
0
-50-25 0 25 50 75100125150
TJ - Degrees Centig rade
© 2006 IXYS All rights reserved
Page 4
IXFB 82N60P
Fig. 7. Input Admittance
120
110
100
90
80
70
60
- Amperes
50
D
I
40
30
20
10
0
3.544.555.566.57
T
= 125ºC
J
25ºC
- 40ºC
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
250
225
200
175
150
125
- Amperes
100
S
I
75
50
25
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
T
= 125ºC
J
VSD - Volts
TJ = 25º C
Fig. 8. Transconductance
160
140
120
100
T
= - 40ºC
J
25ºC
80
125ºC
- Siemens
f s
60
g
40
20
0
0 20 40 60 80 100 120 140
ID - Amperes
Fig. 10. Gate Ch a rge
10
V
= 300V
DS
9
8
7
6
5
- Volts
GS
V
4
3
2
1
0
= 41A
I
D
I
= 10mA
G
0 25 50 75 100 125 150 175 200 225 250
QG - NanoCoulombs
Fig. 11. Capacitance
100,000
f = 1 MHz
C
10,000
1,000
iss
C
oss
Capacitance - PicoFarads
C
rss
100
0 5 10 15 20 25 30 35 40
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 12. Forward-Bias Safe Operating Area
1,000
R
Limit
DS(on)
100
- Amperes
D
I
10
TJ = 150ºC
= 25ºC
T
C
1
10 100 1000
DC
VDS - Volts
25µs
100µs
1ms
10ms
Page 5
Fig. 13. Maxim um Transient Thermal Resistance
1.000
0.100
- ºC / W
(th)JC
R
0.010
0.001
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
IXFB 82N60P
© 2006 IXYS All rights reserved
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