Page 1
HiPerFET
TM
IXFB 72N55Q2
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic R
High dV/dt, Low t
rr
Preliminary Data Sheet
Symbol Test Conditions Maximum Ratings
g
V
DSS
I
D25
R
DS(on)
trr
= 550 V
= 72 A
= 72 m
≤ ≤
≤ 250 ns
≤ ≤
PLUS 264TM (IXFB)
ΩΩ
Ω
ΩΩ
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
F
c
TJ= 25°C to 150°C 550 V
TJ= 25°C to 150°C; RGS = 1 MΩ 550 V
Continuous ±30 V
Transient ±40 V
TC= 25°C72A
TC= 25°C, pulse width limited by T
TC= 25°C72A
JM
284 A
TC= 25°C60mJ
TC= 25°C 5.0 J
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
TJ≤ 150°C, RG = 2 Ω
DSS
20 V/ns
TC= 25°C 890 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
1.6 mm (0.063 in.) from case for 10 s 300 °C
Mounting Force 30...120/7.5...27 N/lb
Weight 10 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
V
I
I
R
DSS
GS(th)
GSS
DSS
DS(on)
V
V
= 0 V, ID = 1mA 550 V
GS
= VGS, ID = 8mA 2.5 5.0 V
DS
VGS = ±30 V, VDS = 0 ±200 nA
VDS = V
V
DSS
= 0 V TJ = 125°C5 mA
GS
VGS = 10 V, ID = 0.5 • I
Note 1
D25
TJ = 25°C 100 µA
72 mΩ
G
D
S
(TAB)
G = Gate D = Drain
S = Source TAB = Drain
Features
z
Double metal process for low gate
resistance
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
z
Fast intrinsic rectifier
Applications
z
DC-DC converters
z
Switched-mode and resonant-mode
power supplies, >500kHz switching
z
DC choppers
z
Pulse generation
z
Laser drivers
Advantages
z
PLUS 264
TM
package for clip or spring
mounting
z
Space savings
z
High power density
© 2003 IXYS All rights reserved
DS98999C(10/03)
Page 2
IXFB 72N55Q2
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
g
C
C
C
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
R
R
fs
iss
oss
rss
g(on)
gs
gd
thJC
thCK
J
VDS= 10 V; ID = 0.5 • I
Note 1 40 57 S
D25
VGS = 0 V, VDS = 25 V, f = 1 MHz 1500 pF
VGS = 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
RG = 1 Ω (External) 58 ns
VGS = 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
min. typ. max.
10500 pF
230 pF
30 ns
D25
23 ns
10 ns
258 nC
D25
65 nC
123 nC
0.14 K/W
0.13 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
PLUS 264TM Outline
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
VGS= 0 V 72 A
Repetitive; 288 A
pulse width limited by T
JM
IF = IS, VGS = 0 V, Note 1 1.5 V
IF = 25A
-di/dt = 100 A/µs
VR = 100 V
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
250 ns
1.2 µ C
8A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Page 3
IXFB 72N55Q2
V
d
d
Fig. 1. Output Characte r is tics
@ 25 Deg. C
72
63
54
45
36
- Amperes
D
27
I
18
9
0
0123456
V
= 10V
GS
8V
7V
V
- Volts
D S
6V
5V
Fig. 3. Output Char acte r is tics
@ 125 Deg. C
72
63
54
45
36
- Amperes
D
27
I
18
9
0
024681012
V
GS
8V
7V
V
- Volts
D S
= 10V
6V
5V
Fig. 2. Extended Output Characte ris tics
@ 25 deg. C
180
160
140
120
100
80
- Amperes
D
I
60
40
20
0
0 2 4 6 8 101214161820
Fig . 4. R
DS(on)
V
= 10V
GS
8V
V
- Volts
D S
Norm alized to I
D25
Junction Temperature
2.8
2.6
2.4
2.2
1.8
1.6
- Normalize
1.4
1.2
D S (on)
R
0.8
0.6
0.4
VGS = 10V
2
ID = 72A
ID = 36A
1
-50 -25 0 25 50 75 100 125 150
TJ - Degrees Centigrade
7V
6V
5V
alue vs .
Fig . 5. R
2.8
2.6
2.4
2.2
2
1.8
- Normalize
1.6
D S (on)
1.4
R
1.2
1
0.8
VGS = 10V
0 20 40 60 80 100 120 140 160 180
Norm alized to I
DS(on)
Value vs. I
TJ = 125ºC
TJ = 25ºC
D25
D
80
70
60
50
40
- Amperes
D
30
I
20
10
0
I D - Amperes
Fig. 6. Drain Curre nt vs. Case
Tem perature
-50 -25 0 25 50 75 100 125 150
TC - Degrees Centigrade
© 2003 IXYS All rights reserved
Page 4
IXFB 72N55Q2
Fig. 7. Input Adm ittance
100
90
80
70
60
50
- Amperes
40
D
I
30
20
10
0
3.544.555.566.57
TJ = 125ºC
25ºC
-40ºC
V
- Volts
G S
Fig. 9. Sour ce Curre n t vs .
Sour ce -To-Drain V oltage
200
180
160
140
120
100
- Amperes
80
S
I
60
40
TJ = 125ºC
20
0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
TJ = 25ºC
V
- Volts
S D
Fig. 8. Tr ans conductance
110
100
90
TJ = -40ºC
80
25ºC
125ºC
70
60
50
- Siemens
f s
40
g
30
20
10
0
0 20 40 60 80 100 120 140 160
I D - Amperes
Fig. 10. Gate Char ge
10
V
= 275V
9
8
7
6
5
- Volts
G S
4
V
3
2
1
0
DS
= 36A
I
D
= 10m A
I
G
0 40 80 120 160 200 240 280
Q G - nanoCoulombs
Fig. 11. Capacitance
100000
f = 1MHz
C
iss
10000
C
oss
Capacitance - pF
1000
C
rss
100
0 5 10 15 20 25 30 35 40
V
- Volts
D S
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Fig. 12. Maxim um Tr ansient The r m al
Resistance
0.16
0.14
0.12
0.1
(ºC/W)
-
0.08
(th) J C
0.06
R
0.04
0.02
0
1 10 100 1000
Pulse Width - milliseconds
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