Page 1
PolarHV
TM
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFB 60N80P
V
I
D25
R
t
rr
DSS
DS(on)
= 800 V
=60A
≤≤
≤ 140 m
≤≤
≤≤
≤ 250 ns
≤≤
ΩΩ
Ω
ΩΩ
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
F
C
Weight 10 g
TJ= 25° C to 150° C 800 V
TJ= 25° C to 150° C; RGS = 1 MΩ 800 V
Continuous ±30 V
Transient ±40 V
TC= 25° C60A
TC= 25° C, pulse width limited by T
TC= 25° C30A
TC= 25° C 100 mJ
TC= 25° C5J
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
TJ≤ 150° C, RG = 2 Ω
TC= 25° C 1250 W
1.6 mm (0.062 in.) from case for 10 s 300 °C
Plastic body for 10 s 260 °C
Mounting force 30..120/7.5...2.7 N/lb
JM
, 20 V/ns
DSS
-55 ... +150 °C
-55 ... +150 °C
150 A
150 °C
PLUS264TM (IXFB)
G
D
S
G = Gate D = Drain
S = Source TAB = Drain
Features
l
International standard packages
l
Fast recovery diode
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
Advantages
l
Plus 264TM package for clip or spring
l
Space savings
l
High power density
(TAB)
Symbol Test Conditions Characteristic Values
(TJ = 25° C, unless otherwise specified) Min. Typ. Max.
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
© 2006 IXYS All rights reserved
VGS= 0 V, ID = 3 mA 800 V
VDS= VGS, ID = 8 mA 3.0 5.0 V
VGS= ±30 VDC, VDS = 0 ±200 nA
VDS= V
VGS= 0 V TJ = 125° C 3000 µA
VGS= 10 V, ID = 0.5 I
DSS
, Note 1 140 m Ω
D25
25 µA
DS99560E(02/06)
Page 2
IXFB 60N80P
Symbol Test Conditions Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCS
VDS= 20 V; ID = 0.5 I
VGS = 0 V, VDS = 25 V, f = 1 MHz 1200 pF
VGS= 10 V, VDS = 0.5 V
RG= 1 Ω (External) 110 ns
VGS= 10 V, VDS = 0.5 V
, Note 1 35 67 S
D25
18 nF
44 pF
36 ns
, ID =0.5 I
DSS
D25
29 ns
26 ns
250 nC
, ID = 0.5 I
DSS
D25
90 nC
78 nC
0.10 ° C/W
0.13 ° C/W
Source-Drain Diode Characteristic Values
(TJ = 25° C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
PLUS264TM (IXFB) Outline
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
VGS = 0 V 60 A
Repetitive 150 A
IF = IS, VGS = 0 V, Note 1 1.5 V
IF = 25A, -di/dt = 100 A/µs 250 ns
VR = 100V 0.6 µC
Notes:
1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
6.0 A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
Page 3
IXFB 60N80P
Fig. 1. Output Characteristics
@ 25ºC
60
55
50
45
40
35
30
- Amperes
25
D
I
20
15
10
5
0
0123456789
VDS - Volts
V
= 10V
GS
7V
6V
5V
Fig. 3. Output Characteristics
@ 125ºC
60
V
= 10V
GS
55
50
45
40
35
30
- Amperes
25
D
I
20
15
10
5
0
0 2 4 6 8 10 12 14 16 18 20
VDS - Volts
7V
6V
5V
Fig. 2. Extended Output Characteristics
@ 25ºC
120
100
80
60
- Amperes
D
I
40
20
0
0 3 6 9 12 15 18 21 24 27 30
Fig. 4. R
DS(on)
V
= 10V
GS
7V
6V
5V
VDS - Vo lts
Normalized to ID = 30A Value
vs. Junction Temperature
3.2
V
= 10V
GS
2.8
2.4
2
- Normalized
1.6
DS(on)
R
1.2
0.8
0.4
-50 -25 0 25 50 75 100 125 150
I D = 60A
I D = 30A
TJ - Degrees Centigrade
Fig. 5. R
Norm a liz e d to ID = 30A Value
DS(on)
vs. Drain Current
2.8
V
= 10V
GS
2.6
2.4
2.2
2
1.8
- Normalize d
1.6
DS(on)
1.4
R
1.2
1
0.8
0 20 40 60 80 100 120
TJ = 125ºC
TJ = 25ºC
ID - Am peres
© 2006 IXYS All rights reserved
Fig. 6. Maximum Drain Current vs.
Case Temperature
70
60
50
40
30
- Amperes
D
I
20
10
0
-50-25 0 25 50 75100125150
TJ - Degrees Centigrade
Page 4
IXFB 60N80P
Fig. 7. Input Admittance
80
70
60
50
40
- Amperes
D
I
30
20
10
0
4 4.25 4.5 4 .75 5 5.25 5 .5 5.7 5 6 6 .25 6.5 6.75
T
= 125ºC
J
25ºC
- 40ºC
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
180
160
140
120
100
80
- Amperes
S
I
60
40
20
0
0.30.40.50.6 0.70.80.9 1 1.11.2 1.31.4
T
= 125ºC
J
VSD - Volts
TJ = 25ºC
Fig. 8. Transconductance
130
120
110
100
90
80
T
= - 40ºC
J
70
25ºC
60
125 ºC
- Siemens
f s
50
g
40
30
20
10
0
0 1020304050607080
ID - Am pere s
Fig. 10. Gate Charge
10
V
= 400V
DS
9
8
7
6
5
- Volts
GS
V
4
3
2
1
0
= 30A
I
D
I
= 10 mA
G
0 20 40 60 80 100 120 140 160 180 200 220 240 260
QG - NanoC oulom bs
Fig. 11. Capacitance
100,000
f = 1 MHz
10,000
1,000
100
Capacitance - PicoFarads
10
0 5 10 15 20 25 30 35 40
C
iss
C
oss
C
rss
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 12. Maximum Transient Thermal
Resistance
1.000
0.100
- ºC / W
(th)JC
R
0.010
0.001
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
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