Page 1
Polar
HiPerFET
TM
Power MOSFET
TM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFB52N90P
V
I
D25
R
t
rr
DSS
DS(on)
= 900V
= 52A
≤≤
≤ 160m
≤≤
≤≤
≤ 300ns
≤≤
ΩΩ
Ω
ΩΩ
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dV/dt IS≤ IDM, VDD ≤ V
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
F
C
TJ= 25°C to 150°C 900 V
TJ= 25°C to 150°C, RGS = 1MΩ 900 V
Continuous ± 30 V
Transient ± 40 V
TC= 25°C52A
TC= 25°C, Pulse Width Limited by T
JM
104 A
TC= 25°C26A
TC= 25°C2J
≤ 150°C 20 V/ns
DSS,TJ
TC= 25°C 1250 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
1.6mm (0.062 in.) from Case for 10s 300 °C
Plastic Body for 10s 260 °C
Mounting Force 30..120/6.7..27 N/lb.
Weight 10 g
PLUS264
G = Gate D = Drain
S = Source TAB = Drain
TM
G
D
S
(TAB)
Features
z
Fast Intrinsic Diode
z
Avalanche Rated
z
Low Package Inductance
Advantages
z
Plus 264TM Package for Clip or Spring
Mounting
z
Space Savings
z
High Power Density
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BV
V
I
GSS
I
DSS
DSS
GS(th)
VGS= 0V, ID = 3mA 900 V
VDS= VGS, ID = 1mA 3.5 6.5 V
VGS= ± 30V, VDS = 0V ± 200 nA
VDS= V
= 0V 50 μA
DSS, VGS
TJ = 125°C 4 mA
R
DS(on)
© 2009 IXYS CORPORATION, All Rights Reserved
VGS= 10V, ID = 0.5 • I
Note 1 160 mΩ
D25,
Applications
z
Switched-Mode and Resonant-Mode
Power Supplies
z
DC-DC Converters
z
Laser Drivers
z
AC and DC Motor drives
z
Robotics and Servo Controls
DS100064A(02/09)
Page 2
IXFB52N90P
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
g
R
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
Gi
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCS
VDS= 20V, ID = 0.5 • I
, Note 1 20 35 S
D25
Gate Input Resistance 1.56 Ω
19 nF
VGS = 0V, VDS = 25V, f = 1MHz 1180 pF
24 pF
Resistive Switching Times 63 ns
VGS = 10V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
D25
80 ns
RG= 1Ω (External) 95 ns
42 ns
308 nC
VGS= 10V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
D25
117 nC
132 nC
0.10 °C/W
0.13 °C/W
Source-Drain Diode Characteristic Values
TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
PLUS264TM (IXFB) Outline
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
VGS = 0V 52 A
Repetitive, Pulse Width Limited by T
IF = IS, VGS = 0V, Note 1 1.5 V
IF = 26A, -di/dt = 100A/μs
V
= 100V
R
Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
JM
300 ns
1.8 μC
26 A
208 A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Page 3
IXFB52N90P
Fig. 1. Output C h ar ac ter i sti cs
@ 25ºC
55
50
45
40
35
30
25
- Amperes
D
I
20
15
10
5
0
0123456789
VDS - Volts
V
= 10V
GS
9V
7V
8V
Fig. 3. Output Characteristics
@ 125ºC
55
50
45
40
35
30
25
- Am p e re s
D
I
20
15
10
5
0
0 2 4 6 8 101214161820
VDS - Volts
V
= 10V
GS
9V
6V
8V
7V
Fig. 2. Extended Output Characteristics
@ 25ºC
110
100
90
80
70
60
50
- Am p e re s
D
40
I
30
20
10
0
0 5 10 15 20 25 30
Fig. 4. R
DS(on)
V
= 10V
GS
9V
8V
7V
VDS - Volts
Normalized to ID = 26A Value
vs. Juncti o n Temperature
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
- Norm a lize d
1.4
DS(on)
1.2
R
1.0
0.8
0.6
0.4
V
= 10V
GS
I D = 52A
I D = 26A
-50 -25 0 25 50 75 100 125 150
TJ - Degrees Centigra de
Fig. 5. R
Normalized to ID = 26A Value
DS(on)
vs. Drai n Curr en t
2.8
2.6
V
= 10V
GS
2.4
2.2
2.0
1.8
- Norm a lize d
1.6
DS(on)
1.4
R
1.2
1.0
0.8
0 102030405060708090
ID - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
TJ = 125ºC
TJ = 25ºC
Fig. 6. Maximum Drain Current vs.
Case T emp er atu re
60
55
50
45
40
35
30
25
- Am p e res
D
I
20
15
10
5
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees Centigrade
Page 4
IXFB52N90P
Fig. 7. Input Admittance
70
60
50
T
= 125ºC
40
30
- Amperes
D
I
20
10
0
5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
J
25ºC
- 40ºC
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
160
140
120
100
80
- Amperes
S
I
60
T
= 125ºC
40
20
J
TJ = 25ºC
Fig. 8. Transconductance
70
60
50
40
- Siemens
30
f s
g
20
10
0
0 1020304050607080
ID - Amperes
T
= - 40ºC
J
25ºC
125ºC
Fig. 10. Gate Charge
16
V
= 450V
14
12
10
- Volt s
GS
V
DS
I
= 26A
D
= 10mA
I
G
8
6
4
2
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
VSD - Volt s
Fig. 11. Capacitance
100,000
10,000
1,000
100
Capacitance - PicoFarads
f = 1 MHz
10
0 5 10 15 20 25 30 35 40
C
iss
C
oss
C
rss
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0
0 50 100 150 200 250 300 350 400 450
QG - NanoCoulombs
Fig. 12. Maximum Transi ent T h er mal
Impedance
1.000
0.100
- ºC / W
(th)JC
Z
0.010
0.001
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
IXYS REF: F_52N90P(97)10-24-08
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