Page 1
HiPerFET
TM
Power MOSFETs
IXFB 50N80Q2
V
DSS
I
D25
= 800 V
= 50 A
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic R
High dV/dt, Low t
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
F
c
Weight 10 g
Symbol Test Conditions Characteristic Values
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
TJ= 25°C to 150°C 800 V
TJ= 25°C to 150°C; RGS = 1 MΩ 800 V
Continuous ±30 V
Transient ±40 V
TC= 25°C50A
TC= 25°C, pulse width limited by T
TC= 25°C50A
TC= 25°C60mJ
TC= 25°C 5.0 J
TJ≤ 150°C, RG = 2 Ω
TC= 25°C 890 W
1.6 mm (0.063 in.) from case for 10 s 300 °C
Mounting Force 30...120/7.5...27 N/lb
V
V
VGS = ±30 V, VDS = 0 ±200 nA
VDS = V
V
VGS = 10 V, ID = 0.5 • I
rr
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
(TJ = 25°C, unless otherwise specified)
= 0 V, ID = 1mA 800 V
GS
= VGS, ID = 8mA 2.5 5.0 V
DS
DSS
= 0 V TJ = 125°C 3 mA
GS
Note 1
D25
TJ = 25°C 50 µA
DSS
g
JM
200 A
20 V/ns
-55 ... +150 °C
150 °C
-55 ... +150 °C
min. typ. max.
0.15 Ω
R
DS(on)
≤ ≤
≤ 300 ns
t
≤ ≤
rr
= 0.15
ΩΩ
Ω
ΩΩ
PLUS 264TM (IXFB)
G
D
S
(TAB)
G = Gate D = Drain
S = Source TAB = Drain
Features
z
Double metal process for low gate
resistance
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
z
Fast intrinsic rectifier
Applications
z
DC-DC converters
z
Switched-mode and resonant-mode
power supplies, >500kHz switching
z
DC choppers
z
Pulse generation
z
Laser drivers
Advantages
z
PLUS 264
TM
package for clip or spring
mounting
z
Space savings
z
High power density
© 2004 IXYS All rights reserved
DS99005B(09/04)
Page 2
IXFB50N80Q2
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
g
C
C
C
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
R
R
fs
iss
oss
rss
G(on)
GS
GD
thJC
thCK
J
VDS= 20 V; ID = 0.5 • I
Note 1 32 48 S
D25
VGS = 0 V, VDS = 25 V, f = 1 MHz 1200 pF
VGS = 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
RG = 1 Ω (External) 60 ns
VGS = 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
min. typ. max.
7200 pF
230 pF
26 ns
D25
25 ns
13 ns
260 nC
D25
56 nC
120 nC
0.14 K/W
0.13 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
PLUS 264TM Outline
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
I
S
I
SM
V
SD
t
rr
Q
RM
VGS= 0 V 50 A
Repetitive; 200 A
pulse width limited by T
JM
IF = IS, VGS = 0 V, Note 1 1.5 V
IF = 25A
-di/dt = 100 A/µs
VR = 100 V
I
RM
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
300 ns
1.1 µC
8A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463
Page 3
IXFB50N80Q2
V
Fig. 1. Output Characteristics
@ 25 Deg. C
60
V
= 10V
50
40
30
- Amperes
20
D
I
10
GS
9V
8V
7V
6V
5V
0
0246810
- Volts
V
DS
Fig. 3. Output Characteristics
@ 125 Deg. C
60
V
= 10V
50
40
30
- Amperes
20
D
I
10
GS
9V
8V
7V
6V
5V
0
0 4 8 12162024
V
- Volts
DS
Fig. 2. Extended Output Characteristics
@ 25 deg. C
105
V
= 10V
90
75
60
45
- Amperes
D
I
30
GS
9V
8V
7V
6V
5V
15
0
0 4 8 12 16 20 24
- Volts
V
DS
Fig . 4 . R
Normalized to I
DS(on)
D25
vs. Junction Tempera ture
3
2.5
2
1.5
- Normalized
DS(on)
1
R
0.5
VGS = 10V
ID = 50A
ID = 25A
-50 -25 0 25 50 75 100 125 150
- Degre es Centigrade
T
J
alue
Fig. 6. Drain Current vs. Case
Tem perature
60
50
40
2.8
2.5
2.2
Fig . 5. R
VGS = 10V
Norm aliz e d to I
DS(on)
TJ = 125ºC
Value vs. I
D25
D
1.9
30
1.6
- Normalized
1.3
DS(on)
R
TJ = 25ºC
1
0.7
0 20406080100
- Amperes
I
D
- Amperes
D
20
I
10
0
-50 -25 0 25 50 75 100 125 150
- Degrees Centigrade
T
C
© 2004 IXYS All rights reserved
Page 4
IXFB50N80Q2
Fig. 7. Input Admittance
70
60
50
40
30
- Amperes
D
I
20
TJ= -40ºC
25
125
º
º
C
C
10
0
3 3.5 4 4.5 5 5.5 6 6.5
VGS - V olts
Fig. 9. Source Current vs. Source-To-
Drain Voltage
-150
-120
-90
Fig. 8 . Transconducta nce
100
TJ = -4 0ºC
80
60
40
- Siemens
fs
G
TJ = 25ºC
TJ = 125ºC
20
0
0 153045607590
I
- Am pere s
D
Fig. 10. Gate Charge
10
V
= 400V
DS
I
8
6
= 25A
D
I
= 10mA
G
- Amperes
-60
S
I
-30
0
10000
1000
Capacitance - pF
100
010203040
TJ = 125ºC
TJ = 25ºC
V
- V olts
SD
Fig. 11. Capacitance
Ciss
Cos s
Crs s
V
- Volts
DS
f=1Mhz
- Volts
4
GS
V
2
0
-1.4-1.2-1-0.8-0.6-0.4
0 40 80 120 160 200 240 280
Q
- nanoCoulombs
G
Fig. 12 . M a x im um Tr a nsient The r m al
Resistance
1
(ºC/W)
0.1
(th)JC -
R
0.01
1 10 100 1000
Puls e Width - m illise cond s
IXYS reserves the right to change limits, test conditions, and dimensions.
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