Page 1
PolarHV
TM
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFB 100N50P
V
DSS
I
D25
R
DS(on)
t
rr
= 500 V
= 100 A
≤≤
≤ 49 m
≤≤
≤≤
≤ 200 ns
≤≤
ΩΩ
Ω
ΩΩ
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DRMS
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
F
C
Weight 10 g
TJ= 25° C to 150° C 500 V
TJ= 25° C to 150° C; RGS = 1 MΩ 500 V
Continuous ±30 V
Transient ±40 V
TC= 25° C 100 A
External lead current limit 75 A
TC= 25° C, pulse width limited by T
TC= 25° C 100 A
TC= 25° C 100 mJ
TC= 25° C5J
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
TJ≤ 150° C, RG = 2 Ω
TC= 25° C 1250 W
1.6 mm (0.062 in.) from case for 10 s 300 °C
Plastic body for 10 s 260 °C
Mounting force 30..120/7.5...2.7 N/lb
JM
, 20 V/ns
DSS
-55 ... +150 °C
-55 ... +150 °C
250 A
150 °C
PLUS264TM (IXFB)
G
D
S
G = Gate D = Drain
S = Source TAB = Drain
Features
l
International standard packages
l
Fast recovery diode
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
Advantages
l
Plus 264TM package for clip or spring
l
Space savings
l
High power density
(TAB)
Symbol Test Conditions Characteristic Values
(TJ = 25° C, unless otherwise specified) Min. Typ. Max.
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
© 2006 IXYS All rights reserved
VGS= 0 V, ID = 3 mA 500 V
VDS= VGS, ID = 8 mA 3.0 5.0 V
VGS= ±30 VDC, VDS = 0 ±200 nA
VDS= V
VGS= 0 V TJ = 125° C 2000 µA
VGS= 10 V, ID = 0.5 I
DSS
, Note 1 49 m Ω
D25
25 µA
DS99496E(01/06)
Page 2
IXFB 100N50P
Symbol Test Conditions Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCS
VDS= 20 V; ID = 0.5 I
VGS = 0 V, VDS = 25 V, f = 1 MHz 1700 pF
VGS= 10 V, VDS = 0.5 V
RG= 1 Ω (External) 110 ns
VGS= 10 V, VDS = 0.5 V
, Note 1 50 80 S
D25
20 nF
140 pF
36 ns
, ID =0.5 I
DSS
D25
29 ns
26 ns
240 nC
, ID = 0.5 I
DSS
D25
96 nC
78 nC
0.10 ° C/W
0.13 ° C/W
Source-Drain Diode Characteristic Values
= 25° C, unless otherwise specified)
(T
Symbol Test Conditions Min. Typ. Max.
J
PLUS264TM (IXFB) Outline
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
VGS = 0 V 100 A
Repetitive 250 A
IF = IS, VGS = 0 V, Note 1 1.5 V
IF = 25A, -di/dt = 100 A/µs 200 ns
VR = 100V 0.6 µC
Notes:
1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
6.0 A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
Page 3
IXFB 100N50P
Fig. 1. Output Characteristics
@ 25ºC
100
90
80
70
60
50
- Amperes
40
D
I
30
20
10
0
00.511.522.533.544.555.5
V
GS
8V
VDS - Vo lts
= 10V
7V
6V
5V
Fig. 3. Output Characteristics
@ 125ºC
100
90
80
70
60
50
- Amperes
40
D
I
30
20
10
0
01234 567891011
VDS - Volts
V
= 10V
GS
8V
7V
6V
5V
Fig. 2. Extended Output Characteristics
@ 25ºC
220
200
180
160
140
120
100
- Amp eres
D
I
80
60
40
20
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26
Fig. 4. R
V
= 10V
GS
9V
8V
7V
6V
VDS - Vo lts
Normalized to ID = 50A Value
DS(on)
vs. Junction Temperature
3.1
V
2.8
2.5
2.2
1.9
- Normalized
1.6
1.3
DS(on)
R
1
0.7
0.4
-50 -25 0 25 50 75 100 125 150
= 10V
GS
TJ - Degrees Centigrade
I D = 100A
I D = 50A
Fig. 5. R
Norm a liz e d to ID = 50A Value
DS(on)
vs. Drain Current
3
V
2.8
2.6
2.4
2.2
2
- Normalize d
1.8
1.6
DS(on)
R
1.4
1.2
1
0.8
0 20 40 60 80 100 120 140 160 180 200 220
GS
= 10V
TJ = 125ºC
TJ = 25ºC
ID - Am peres
© 2006 IXYS All rights reserved
Fig. 6. Maximum Drain Current vs.
Case Temperature
90
External Le ad Curre nt Limit
80
70
60
50
40
- Amperes
D
I
30
20
10
0
-50-25 0 25 50 75100125150
TJ - Degrees Centigrade
Page 4
IXFB 100N50P
Fig. 7. Input Admittance
160
140
120
100
80
- Amperes
D
I
60
40
20
0
44.555.566.577.5
T
= 125ºC
J
25ºC
- 40 ºC
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
300
250
200
150
- Amp eres
S
I
100
50
0
0.4 0.6 0.8 1 1.2 1.4 1.6
T
J
= 125ºC
TJ = 25ºC
VSD - Vo lts
Fig. 8. Transconductance
150
135
120
105
T
= - 40ºC
J
90
25ºC
12 5ºC
75
- Siemens
f s
60
g
45
30
15
0
0 20 40 60 80 100 120 140 160 180
ID - Am peres
Fig. 10. Gate Charge
10
V
= 250V
DS
9
8
7
6
5
- Volts
GS
V
4
3
2
1
0
= 50A
I
D
I
= 10 mA
G
0 25 50 75 100 125 150 175 200 225 250
QG - NanoC oulom bs
Fig. 11. Capacitance
100,000
f = 1 MHz
C
iss
10,000
C
oss
1,000
Capacitance - PicoFarads
C
rss
100
0 5 10 15 20 25 30 35 40
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 12. Forward-Bias Safe Operating Area
1,000
R
Limit
DS(on)
100
- Amperes
D
I
10
TJ = 150ºC
T
= 25ºC
C
1
10 100 1000
DC
VDS - Volts
25µs
100µs
1ms
10ms
Page 5
IXFB 100N50P
Fig. 13. Maximum Transient Thermal Resistance
1.000
0.100
- ºC / W
(th)JC
R
0.010
0.001
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
© 2006 IXYS All rights reserved
Loading...