Page 1
Preliminary Technical Information
Very High Voltage
IGBT
IXEL40N400
V
CES
I
C90
V
CE(sat)
t
fi(typ)
( Electrically Isolated Tab)
ISOPLUS i5-Pak
Symbol Test Conditions Maximum Ratings
V
CES
V
GES
V
GEM
I
C90
I
CM
P
C
T
J
T
JM
T
stg
T
L
T
SOLD
V
ISOL
F
C
Weight 8g
TJ= 25°C to 125°C 4000 V
Continuous ±20 V
Transient ±30 V
TC= 90°C 40 A
Pulse Width Limited by TJM, 1ms, VGE = 20V 250 A
TC= 25°C 380 W
- 40 ... +125 °C
125 °C
- 40 ... +125 °C
Maximum Lead Temperature for Soldering 300 °C
1.6 mm (0.062 in.) from Case for 10s 260 °C
I
< 1mA, 50/60 Hz, t = 1 minute 4000 V~
ISOL
Mounting Force 30..170 / 7..36 Nm/lb-in.
G
G = Gate C = Collector
E = Emitter
Features
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
4000V Electrical Isolation
UL Recognized Package
High Peak Current Capability
Low Saturation Voltage
Molding Epoxies Meet UL 94 V-0
Flammability Classification
= 4000V
= 40A
≤≤
≤ 3.5V
≤≤
= 425ns
TM
E
C
Isolated Tab
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
V
GE(th)
I
CES
I
GES
V
CE(sat)
© 2009 IXYS CORPORATION, All Rights Reserved
IC= 10mA, VCE = V
VCE= V
, VGE = 0V 100 μA
CES
Note 2, TJ = 125°C 1.5 mA
GE
5.5 7.0 V
VCE= 0V, VGE = ±20V ±500 nA
IC= I
, VGE = 15V, Note 1 2.5 3.5 V
C90
TJ = 125°C 3.0 V
Advantages
High Power Density
Easy to Mount
Applications
Capacitor Discharge
Pulser Circuits
DS99385A(12/09)
Page 2
IXEL40N400
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
I
SC
IC = I
, VCE = 10V, Note 1 14 23 S
C90
IC = I
, VCC = 3400V, VCM < 4000V 200 A
C90
VGE = 15V, tSC < 10μs
C
C
C
R
Q
Q
Q
t
d(on)
t
ri
E
t
d(off)
t
fi
E
t
d(on)
t
ri
E
t
d(off)
t
fi
E
R
R
ies
oes
res
Gint
g(on)
ge
gc
on
off
on
off
thJC
thCK
VCE = 25V, VGE = 0V, f = 1MHz 280 pF
IC = I
, VGE = 15V, VCE = 1000 V 60 nC
C90
Inductive load, TJ = 25°C
I
= I
, VGE = 15V
C
C90
V
= 2800V, RG = 33Ω
CE
Note 3
Inductive load, TJ = 125°C
I
= I
, VGE = 15V
C
C90
V
= 2800V, RG = 33Ω
CE
Note 3
(Pressure Mount) 0.15 °C/W
5900 pF
125 pF
6 Ω
270 nC
133 nC
160 ns
100 ns
55 mJ
630 ns
425 ns
165 mJ
155 ns
105 ns
85 mJ
715 ns
455 ns
205 mJ
0.26 °C/W
ISOPLUS i5-PakTM HV Outline
E
+
31 2
c
e1
e1
Pin 1 = Gate
Pin 2 = Emitter
Pin 3 = Collector
Tab 4 = Isolated
SYM INCHES MILLIMETER
MIN MAX MIN MAX
A 0.190 0.205 4.83 5.21
A1 0.102 0.118 2.59 3.00
A2 0.046 0.055 1.17 1.40
b 0.045 0.055 1.14 1.40
b1 0.063 0.072 1.60 1.83
b2 0.058 0.068 1.47 1.73
c 0.020 0.029 0.51 0.74
D 1.020 1.040 25.91 26.42
E 0.770 0.799 19.56 20.29
e 0.150 BSC 3.81 BSC
e1 0.450 BSC 11.43 BSC
L 0.780 0.820 19.81 20.83
L1 0.080 0.102 2.03 2.59
Q 0.210 0.235 5.33 5.97
Q1 0.490 0.513 12.45 13.03
R 0.150 0.180 3.81 4.57
R1 0.100 0.130 2.54 3.30
S 0.668 0.690 16.97 17.53
T 0.801 0.821 20.34 20.85
U 0.065 0.080 1.65 2.03
S
4
b3
b2
e
b1
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Part must be heatsunk for high-temp Ices measurement.
3. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Page 3
IXEL40N400
Fig. 1. Ou tp u t C haracteristi cs @ TJ = 25ºC
80
70
60
50
40
- Amperes
C
I
30
20
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
GE
19V
15V
VCE - Volts
= 25V
13V
11V
9V
7V
Fig. 3. Ou tp u t C h ar acte r i sti cs @ TJ = 125ºC
80
70
60
50
40
- Amperes
C
I
30
20
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
GE
19V
15V
VCE - Volts
= 25V
13V
11V
9V
7V
Fig. 2. Exten d ed Ou tp ut Character i sti cs @ TJ = 25ºC
Amperes
-
C
I
300
250
200
150
100
50
0
V
= 25V
GE
21V
19V
0 2 4 6 8 101214161820
17V
15V
13V
11V
9V
VCE - Volts
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
2.0
V
= 15V
GE
1.8
1.6
1.4
- Normalized
1.2
CE(sat)
V
1.0
0.8
0.6
-50 -25 0 25 50 75 100 125 150
I C = 80A
I C = 40A
I C = 20A
TJ - Degrees Centigrade
Fig. 5. Collector -to-Em i tter Vo l tag e
vs. Gate-to-Emitter Vol tag e
5.5
5.0
4.5
4.0
3.5
- Volts
CE
V
3.0
2.5
2.0
1.5
8 101214161820222426
20A
40A
I
C
= 80A
VGE - Volts
© 2009 IXYS CORPORATION, All Rights Reserved
TJ = 25ºC
Fig. 6. R ever se-B i as Safe Op er ati n g Area
90
80
70
60
50
40
- Amperes
C
I
30
20
T
= 125ºC
J
R
= 33
Ω
G
10
dv / dt < 10V / ns
0
500 1000 1500 2000 2500 3000 3500 4000
VCE - Volts
Page 4
IXEL40N400
Fig. 7. Input Admittance
200
180
160
140
120
100
Amperes
-
80
C
I
60
40
20
0
4 5 6 7 8 9 10 11 12 13 14 15 16
TJ = 125ºC
25ºC
- 40ºC
VGE - Volts
Fig. 9. Gate Charge
16
V
= 1000V
CE
14
12
10
= 40A
I
C
= 10mA
I
G
Fig. 8. Transconductance
50
45
40
35
T
= - 40ºC
J
30
25ºC
125ºC
25
Siemens
-
20
f s
g
15
10
5
0
0 20 40 60 80 100 120 140 160 180 200
IC - Amperes
Fig. 10. Capacitance
100,000
= 1 MHz
f
C
10,000
ies
8
- Volts
GE
V
6
4
2
0
0 40 80 120 160 200 240 280
QG - NanoCoulombs
1,000
C
oes
100
Capacitance - PicoFarads
10
0 5 10 15 20 25 30 35 40
C
res
VCE - Volts
Fig. 11. Maximum Transi en t Thermal Impedan ce
1.000
0.100
- ºC / W
(th)JC
Z
0.010
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: EL_40N400(ABB Chip)12-16-09
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