• Logic Input Withstands Negative Swing of up to 5V
• Matched Rise and Fall Times
• Low Propagation Delay Time
• Low, 10A Supply Current
• Low Output Impedance
Applications
• Efficient Po wer MOSFET and IGBT Switching
• Switch Mode Po w er Supplies
• Motor Controls
• DC to DC Converters
• Class-D Switching Amplifiers
• Pulse Transformer Driver
Ordering Information
Description
The IXDD609/IXDI609/IXDN609 high-speed gate
drivers are especially well suited for driving the latest
IXYS MOSFETs and IGBTs. The IXD_609
high-current output can source and sink 9A of peak
current while producing voltage rise and fall times of
less than 25ns. The input is CMOS compatible, and is
virtually immune to latch up. Proprietary circuitry
eliminates cross-conduction and current
“shoot-through.” Low propagation delay and fast,
matched rise and fall times make the IXD_609 family
ideal for high-frequency and high-power applications .
The IXDD609 is configured as a non-inv erting driver
with an enable, the IXDN609 is configured as a
non-inverting driver, and the IXDI609 is configured as
an inverting driver.
The IXD_609 family is available in a standard 8-pin
DIP (PI); an 8-pin SOIC (SIA); an 8-pin Po w er SOIC
with an exposed metal bac k (SI); an 8-pin DFN (D2); a
5-pin TO-263 (YI); and a 5-pin TO-220 (CI).
Part Number
IXDD609D2TR8-Pin DFNTape & Reel2000
IXDD609SI8-Pin Power SOIC with Exposed Metal BackTube100
IXDD609SITR8-Pin Power SOIC with Exposed Metal BackTape & Reel2000
IXDD609SIA8-Pin SOICTube100
IXDD609SIATR8-Pin SOICTape & Reel2000
IXDD609PI8-Pin DIPTube50
IXDD609CI5-Pin TO-220Tube50
IXDD609YI5-Pin TO-263Tube50
IXDI609SI8-Pin Power SOIC with Exposed Metal BackTube100
IXDI609SITR8-Pin Power SOIC with Exposed Metal BackTape & Reel2000
IXDI609SIA8-Pin SOICTube100
IXDI609SIATR8-Pin SOICTape & Reel2000
IXDI609PI8-Pin DIPTube50
IXDI609CI5-Pin TO-220Tube50
IXDI609YI5-Pin TO-263Tube50
IXDN609SI8-Pin Power SOIC with Exposed Metal BackTube100
IXDN609SITR8-Pin Power SOIC with Exposed Metal BackTape & Reel2000
IXDN609SIA8-Pin SOICTube100
IXDN609SIATR8-Pin SOICTape & Reel2000
IXDN609PI8-Pin DIPTube50
IXDN609CI5-Pin TO-220Tube50
IXDN609YI5-Pin TO-263Tube50
Unless stated otherwise, absolute maximum electrical ratings are at 25°C
EN
OUT
OUT
V
CC
GND
Output Enable - Drive pin low to disable output,
and force output to a high impedance state
Output - Sources or sinks current to turn-on or
turn-off a discrete MOSFET or IGBT
Inverted Output - Sources or sinks current to
turn-on or turn-off a discrete MOSFET or IGBT
Supply Voltage - Provides power to the device
Ground - Common ground reference for the
device
NCNot connected
V
CC
, V
V
IN
I
T
OUT
T
STG
EN
J
-0.340V
-5
VCC+0.3
V
-±9A
-55+150
°C
-65+150°C
Absolute maximum ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device.
Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not
implied.
(IXDD609 Only)
Disable to High Impedance State Delay Time
(IXDD609 Only)
Enable Pull-Up Resistor-
Power Supply Current
VCC < 35V (unless otherwise noted).
< V
4.5V
4.5V
0V
V
=18V, I
CC
V
CC
Limited by package power
V
CC
V
CC
V
CC
V
CC
V
CC
V
V
CC
< 18V
CC
< V
< 18V
CC
< V
< V
IN
=-100mA
OUT
=18V, I
OUT
=100mA
dissipation
=18V, C
LOAD
=18V, C
LOAD
=18V, C
LOAD
=18V, C
LOAD
=18V
V
CC
=18V
V
CC
=18V, VIN=3.5V
=18V, VIN=0V
CC
=18V, VIN=V
CC
=10nF
=10nF
=10nF
=10nF
CC
V
V
I
IN
V
ENH
V
ENL
V
OH
V
OL
R
OH
R
OL
I
DC
t
t
t
ondly
t
offdly
t
ENOH
t
DOLD
R
EN
I
CC
IH
IL
3.0--
--0.8
--±10A
2/3V
CC
--
VCC-0.025
-1/3V
CC
--
--0.025
-0.61
-0.40.8
--±2A
r
f
-2235
-1525
-4060
-4260
ns
-2560
-3560
-200-k
-12mA
-<110
-<110
A
V
V
V
1.6 Electrical Characteristics: T
Test Conditions: 4.5V <
VCC < 35V unless otherwise noted.
= - 40°C to +125°C
A
Paramet erConditionsSymbolMinimumMaximumUnits
< V
Input Voltage, High
Input Voltage, Low
Input Current
4.5V
4.5V
0V
Output Voltage, High-
Output Voltage, Low-
V
Output Resistance, High State
Output Resistance, Low State
Output Current, Continuous
Rise Time
Fall T im e
On-Time Propagation Delay
Off-Time Propagation Delay
Enable to Output-High Delay Time
Disable to High Impedance State Delay Time
Power Supply Current
=18V, I
CC
V
CC
Limited by package power
V
CC
V
CC
V
CC
V
CC
IXDD609 only, V
IXDD609 only, V
V
CC
V
V
CC
< 18V
CC
< V
< 18V
CC
< V
< V
IN
=-100mA
OUT
=18V, I
OUT
=100mA
dissipation
=18V, C
LOAD
=18V, C
LOAD
=18V, C
LOAD
=18V, C
LOAD
=18V, VIN=3.5V
=18V, VIN=0V
CC
=18V, VIN=V
CC
=10nF
=10nF
=10nF
=10nF
CC
CC
=18V
=18V
CC
V
V
I
IN
V
OH
V
OL
R
OH
R
OL
I
DC
t
t
t
ondly
t
offdly
t
ENOH
t
DOLD
I
CC
IH
IL
3.3-
-0.65
-±10A
VCC-0.025
-
-0.025
-2
-1.5
-±1A
r
f
-40
-30
-75
-75
ns
-75
-75
-2.5mA
-150
-150
A
V
V
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I
NTEGRATED CIRCUITS DIVISION
IXD_609
10%
90%
t
ondly
t
offdly
t
f
t
r
V
IH
V
IL
IN
OUT
EN
INOUT
GND
V
CC
V
CC
+
-
V
IN
0.1μF10μF
Tektronix
Current Probe
6302
C
LOAD
V
CC
1.7 Thermal Characteristics
PackageParameterSymbolRatingUnits
D2 (8-Pin DFN)
CI (5-Pin TO-220)
PI (8-Pin DIP)
SI (8-Pin Power SOIC)
SIA (8-Pin SOIC)
YI (5-Pin TO-263)
CI (5-Pin TO-220)
SI (8-Pin Power SOIC)
YI (5-Pin TO-263)
2IXD_609 Performance
2.1 Timing Diagrams
V
IH
IN
V
IL
Thermal Impedance, Junction-to-Ambient
Thermal Impedance, Junction-to-Case
JA
JC
35
36
125
85
120
46
3
10
2
°C/W
°C/W
t
ondly
t
r
OUT
90%
10%
2.2 Characteristics Test Diagram
t
offdly
t
f
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I
NTEGRATED CIRCUITS DIVISION
3Block Diagrams & Truth Tables
GND
IN
EN
V
CC
OUT
IN
V
CC
GND
OUT
IXD_609
3.1 IXDD609
INENOUT
3.2 IXDI609
01 or open
11 or open
x0
0
1
Z
3.3 IXDN609
IN
INOUT
0
1
0
1
V
CC
OUT
GND
6www.ixysic.comR08
INOUT
0
1
1
0
Page 7
I
NTEGRATED CIRCUITS DIVISION
4Typical Performance Characteristics
Supply Voltage (V)
05101520253035
Rise Time (ns)
0
10
20
30
40
50
60
70
Rise Time vs. Supply Voltage
(Input=0-5V, f=10kHz, T
A
=25ºC)
CL=10nF
C
L
=5.4nF
C
L
=1.5nF
Temperature (ºC)
-40 -20 0 20 40 60 80 100 120 140
Input Threshold Voltage (V)
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
Input Threshold Voltage
vs. T emperature
(V
CC
=18V, CL=2.5nF)
Min V
IH
Max V
IL
Supply Voltage (V)
05101520253035
Propagation Delay (ns)
0
50
100
150
200
Propagation Delay vs. Supply Voltage
(V
IN
=0-5V, f=1kHz, CL=5.4nF)
t
offdly
t
ondly
IXD_609
Fall Time vs. Supply Voltage
(Input=0-5V, f=10kHz, T
60
50
40
30
20
Fall Time (ns)
10
0
05101520253035
Rise Time vs. Load Capacitance
70
VCC=4.5V
60
=8V
V
CC
V
=12V
CC
50
=18V
V
CC
V
=25V
40
CC
=30V
V
CC
30
V
=35V
CC
20
Rise Time (ns)
10
0
0200040006000800010000
Load Capacitance (pF)
Propagation Delay vs. Input Voltage
=5V , VCC=12V, f=1kHz, CL=5.4nF)
(V
IN
180
160
t
ondly
140
120
100
80
60
40
Propagation Delay (ns)
20
0
24681012
Supply Voltage (V)
t
offdly
Input Voltage (V)
Rise and Fall Times vs. Temperature
=0-5V , VCC=18V, f=10kHz, CL=2.5nF)
(V
IN
11
10
9
8
CL=10nF
=5.4nF
C
L
C
=1.5nF
L
=25ºC)
A
7
Rise & Fall Times (ns)
6
5
-40 -20 0 20 40 60 80 100 120 140
Fall Time vs. Load Capacitance
60
VCC=4.5V
=8V
V
50
CC
V
=12V
CC
=18V
V
40
CC
V
=25V
CC
=30V
V
30
CC
=35V
V
CC
20
Fall Time (ns)
10
0
0200040006000800010000
Load Capacitance (pF)
55
(V
50
45
40
35
Propagation Delay (ns)
119753
30
-40 -20 0 20 40 60 80 100 120 140
t
r
t
f
Temperature (ºC)
Propagation Delay
vs. T emperature
=18V, f=1kHz, CL=5.4nF)
CC
t
offdly
t
ondly
Temperature (ºC)
R08www.ixysic.com7
Input Threshold vs. Supply Voltage
3.5
3.0
Min V
2.5
IH
Max V
IL
2.0
Input Threshold (V)
1.5
1.0
05101520253035
Supply Voltage (V)
Enable Threshold vs. Supply Voltage
25
20
Min V
15
10
5
Enable Threshold (V)
0
05101520253035
Supply Voltage (V)
ENH
Max V
ENL
Page 8
I
NTEGRATED CIRCUITS DIVISION
IXD_609
Load Capacitance (pF)
100010000
Supply Current (mA)
0
100
200
300
400
500
Supply Current vs. Load Capacitance
(V
CC
=18V)
f=2MHz
f=1MHz
f=500kHz
f=100kHz
f=50kHz
f=10kHz
f=1kHz
5000
Load Capacitance (pF)
100010000
Supply Current (mA)
0
50
100
150
200
250
300
Supply Current vs. Load Capacitance
(V
CC
=12V)
f=2MHz
f=1MHz
f=500kHz
f=100kHz
f=50kHz
f=10kHz
f=1kHz
5000
Load Capacitance (pF)
100010000
Supply Current (mA)
0
50
100
150
200
Supply Current vs. Load Capacitance
(V
CC
=8V)
f=2MHz
f=1MHz
f=500kHz
f=100kHz
f=50kHz
f=10kHz
f=1kHz
5000
Frequency (kHz)
110100100010000
Supply Current (mA)
0.1
1
10
100
1000
Supply Current vs. Frequency
(V
CC
=18V)
CL=10nF
C
L
=5.4nF
C
L
=1.5nF
Temperature (ºC)
-40 -20 0 20 40 60 80 100 120 140
Supply Current (mA)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Quiescent Supply Current
vs. Temperature
VIN=3.5V
V
IN
=5V
V
IN
=10V
V
IN
=0V & 18V
Supply Voltage (V)
05101520253035
Output Source Current (A)
0
-5
-10
-15
-20
-25
-30
Output Source Current
vs. Supply Voltage
(f=422Hz, C
L
=66nF)
Supply Voltage (V)
05101520253035
Output Sink Current (A)
0
5
10
15
20
25
30
Output Sink Current
vs. Supply Voltage
(f=422Hz, C
L
=66nF)
Supply Current vs. Frequency
1000
CL=10nF
=5.4nF
C
L
100
C
=1.5nF
L
10
1
Supply Current (mA)
0.1
110100100010000
(V
=12V)
CC
Frequency (kHz)
0.65
(V
IN
0.60
0.55
0.50
0.45
Supply Current (mA)
0.40
0.35
-40 -20 0 20 40 60 80 100 120 140
Supply Current vs. Frequency
1000
CL=10nF
=5.4nF
C
100
L
C
=1.5nF
L
10
1
0.1
Supply Current (mA)
0.01
110100100010000
Dynamic Supply Current
vs. T emperature
=5V , VCC=18V, f=1kHz, CL=1.5nF)
Temperature (ºC)
=8V)
(V
CC
Frequency (kHz)
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I
NTEGRATED CIRCUITS DIVISION
IXD_609
Temperature (ºC)
-40 -20 0 20 40 60 80 100 120 140
Output Source Current (A)
-9.0
-9.5
-10.0
-10.5
-11.0
-11.5
-12.0
Output Source Current
vs. T emperature
(V
CC
=18V, f=422Hz, CL=66nF)
Temperature (ºC)
-40 -20 0 20 40 60 80 100 120 140
Output Sink Current (A)
10.0
10.5
11.0
11.5
12.0
12.5
13.0
13.5
14.0
Output Sink Current
vs. T emperature
(V
CC
=18V, f=422Hz, CL=66nF)
High State Output Resistance
vs. Supply Voltage
= -10mA)
(I
1.5
1.0
0.5
Output Resistance (Ω)
0.0
05101520253035
OUT
Supply Voltage (V)
Low State Output Resistance
vs. Supply Voltage
(I
= +10mA )
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
Output Resistance (Ω)
0.3
0.2
05101520253035
OUT
Supply Voltage (V)
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Page 10
I
NTEGRATED CIRCUITS DIVISION
IXD_609
5Manufacturing Information
5.1 Moisture Sensitivity
All plastic encapsulated semiconductor packages are susceptible to moisture ingression. IXYS Integrated
Circuits Division classifies its plastic encapsulated devices for moisture sensitivity according to the latest
version of the joint industry standard, IPC/JEDEC J-STD-020, in f orce at the time of product evaluation.
We test all of our products to the maxim um conditions set forth in the standard, and guarantee proper
operation of our devices when handled accor ding to the limitations and information in that standard as well as to any
limitations set forth in the information or standards referenced below.
Failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced
product performance, reduction of operable life, and/or reduction of ov er all reliability.
This product carries a Moisture Sensitivity Level (MSL) classification as shown below, and should be handled
according to the requirements of the latest version of t he joint industry standard IPC/JEDEC J-STD-033.
This product is ESD Sensitive, and should be handled according to the industry standard JESD-625.
5.3 Soldering Profile
Provided in the table below is t he Classification Temperature (T
body temperature of this device ma y be (T
- 5)ºC or greater . The classification tempe rature sets the Maximum Bo dy
C
) of this product and the maximum dwell time the
C
Temperature allowed for this device during lead-free re flow processes. For through-hole devices, and any other
processes, the guidelines of J-STD-020 must be observed.
Device
IXD_609CI245°C for 30 seconds30 seconds1
IXD_609YI245°C for 30 seconds30 seconds3
IXD_609PI250°C for 30 seconds30 seconds3
IXD_609SI / IXD_609SIA / IXD_609D2260°C for 30 seconds30 seconds3
Classification Temperature (TC)Dwell Time (tp)
Maximum Cycles
5.4 Board Wash
IXYS Integrated Circuits Division recommends the use of no-clean f lux formulations. Board washing to reduce or
remove flux residue following the solder reflow process is accep table provided proper precautions are taken to
prevent damage t o the device. These precautions include b ut a re not limited to: using a low pressure wash and
providing a follo w up bake cycle sufficient to remov e any moisture trapped within the device due to t he washing
process. Due to the variability of the wash parameters used to clean the board, determination of the bake temperature
and duration necessary to remove the moisture trapped within the package is the responsibility of t he user
(assembler). Cleaning or drying methods that employ ultr asonic energy may damage the device and should not be
used. Additionally, the device must n ot be exposed to flux or solvents that are Chlorine- or Fluorine-based.
10www.ixysic.comR08
Page 11
I
NTEGRATED CIRCUITS DIVISION
5.5 Mechanical Dimensions
NOTES:
1. Complies with JEDEC Standard MS-012.
2. All dimensions are in millimeters.
3. Dimensions do not include mold flash or burrs
PCB Land Pattern
Pin 1
Pin 8
3.90 ± 0.10
6.00 ± 0.20
0.42 ± 0.09
4.90 ± 0.10
1.27 REF
1.25 min
0.175 ± 0.075
0.40 min
1.27 max
1.27
5.60
1.75
0.65
1.75 max
Recommended PCB Land Pattern
Dimensions
mm
(inches)
1.346 ± 0.076
(0.053 ± 0.003)
0.051 MIN - 0.254 MAX
(0.002 MIN - 0.010 MAX)
4.928 ± 0.254
(0.194 ± 0.010)
Pin 1
0.406 ± 0.076
(0.016 ± 0.003)
5.994 ± 0.254
(0.236 ± 0.010)
3.937 ± 0.254
(0.155 ± 0.010)
1.270 REF
(0.050)
0.762 ± 0.254
(0.030 ± 0.010)
7º
2.540 ± 0.254
(0.100 ± 0.010)
3.556 ± 0.254
(0.140 ±0.010)
1.27
(0.050)
5.40
(0.209)
1.55
(0.061)
0.60
(0.024)
2.75
(0.108)
3.80
(0.150)
5.5.1 SIA (8-Pin SOIC)
IXD_609
5.5.2 SI (8-Pin Power SOIC with Exposed Metal Back)
Note:
carrying current.
R08www.ixysic.com11
The exposed metal pad on the back of the SI package should be connected to GND. It is not suitable for
Page 12
I
NTEGRATED CIRCUITS DIVISION
5.5.3 Tape & Reel Information for SI and SIA Packages
Dimensions
mm
(inches)
NOTE:
Tape dimensions not shown comply with JEDEC Standard EIA-481-2
Embossment
Embossed Carrier
Top Cover
T ape Thickness
0.102 MAX.
(0.004 MAX.)
330.2 DIA.
(13.00 DIA.)
K0= 2.10
(0.083)
W=12.00
(0.472)
B
0
=5.30
(0.209)
User Direction of Feed
A0=6.50
(0.256)
P=8.00
(0.315)
H
b1
c1
b
c
SECTION: C-C
PLATING
(Note 3)
BASE METAL
E
(Note 2)
D1
D
(Note 2)
L1
e ~4x
CC
E3
D2
*
b ~5x
E1
NOTES :
1. Reference JEDEC TO-263 Type “BA”.
2. Dimension does not include mold flash; mold flash
shall not exceed 0.127mm (0.005 inch) per side.
3. Minimum plating: 1000 microinches.
4. Controlling dimension: millimeters.
MINMINMAXMAX
MMINCH
SYMBOL
1.702 BSC0.067 BSC
0.254 BSC0.010 BSC
0.460 TYP0.018 TYP
0.506 TYP
0.02 TYP
4.8264.0640.1600.190
0.2540.0000.0000.010
0.9910.5080.0200.039
0.8890.5080.0200.035
0.7370.3810.0150.029
0.5840.3810.0150.023
1.6511.1430.0450.065
9.6528.3820.3300.380
7.7006.8580.2700.303
10.6689.6520.3800.420
8.0006.2230.2450.315
15.87514.6050.5750.625
2.7941.7780.0700.110
1.6761.0000.0390.066
8º--8º
A
θ
A1
b
b1
c
c1
c2
D
D1
E
E1
e
H
L
L1
L3
R
R1
6.8695.0920.2000.270E3
1.5621.3580.0530.062D2
A1
L
L3
θ
R
R
A
c2
A1
L
L3
θ
R1
R1
JEDEC TO-263
Optional Tip Lead Form
Recommended PCB Pattern
10.75
(0.423)
2.20
(0.087)
8.40
(0.331)
8.05
(0.317)
10.50
(0.413)
1.05
(0.041)
3.80
(0.150)
1.702
(0.067)
Dimensions
mm
(inches)
Pin 1
Indicator
Circular feature will be
present on devices
with the
Optional Tip Lead Form.
*
5.5.4 YI (5-Pin TO-263)
IXD_609
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Page 13
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NTEGRATED CIRCUITS DIVISION
5.5.5 PI (8-Pin DIP)
Dimensions
mm
(inches)
PCB Hole Pattern
2.540 ± 0.127
(0.100 ± 0.005)
6.350 ± 0.127
(0.250 ± 0.005)
9.144 ± 0.508
(0.360 ± 0.020)
0.457 ± 0.076
(0.018 ± 0.003)
9.652 ± 0.381
(0.380 ± 0.015)
7.239 TYP.
(0.285)
7.620 ± 0.254
(0.300 ± 0.010)
4.064 TYP
(0.160)
0.813 ± 0.102
(0.032 ± 0.004)
8-0.800 DIA.
(8-0.031 DIA.)
2.540 ± 0.127
(0.100 ± 0.005)
7.620 ± 0.127
(0.300 ± 0.005)
7.620 ± 0.127
(0.300 ± 0.005)
3.302 ± 0.051
(0.130 ± 0.002)
Pin 1
0.254 ± 0.0127
(0.010 ± 0.0005)
IXD_609
5.5.6 CI (5-Pin TO-220)
0.127 BSC
(0.005 BSC)
14.224 - 16.510
(0.560 - 0.650)
12.700 - 14.732
(0.500 - 0.580)
1.702 4x BSC
(0.067 4x BSC)
9.652 - 10.668
(0.380 - 0.420)
CC
A
0.355 M B A M
2.540 - 3.048
(0.100 - 0.120)
8.382 - 9.017
(0.330 - 0.355)
0.381 - 1.016 5x
(0.015 - 0.040 5x)
0.381 M B A M
LEAD TIP
3.810 - 3.860
(0.150 - 0.152)
4.826 - 5.334
(0.190 - 0.210)
PLATING
0.356 - 0.610
(0.014 - 0.024)
B
3.556 - 4.826
(0.140 - 0.190)
0.508 - 1.397
(0.020 - 0.055)
5.842 - 6.858
(0.230 - 0.270)
2.032 - 2.921
(0.080 - 0.115)
0.356 - 0.610
(0.014 - 0.024)
5.842 - 6.858
(0.230 - 0.270)
6.300 - 6.700
(0.248 - 0.264)
THERMAL PAD
SECTION C-C
0.381 - 1.016
(0.015 - 0.040)
0.381 - 0.965
(0.015 - 0.038)
BASE METAL
0.356 - 0.559
(0.014 - 0.022)
9.652 - 10.668
(0.380 - 0.420)
6.858 - 8.890
(0.270 - 0.350)
7.550 - 8.100
(0.297 - 0.319)
Dimensions
mm
(inches)
12.192 - 12.878
(0.480 - 0.507)
R08www.ixysic.com13
Page 14
I
NTEGRATED CIRCUITS DIVISION
5.5.7 D2 (8-Pin DFN)
Dimensions
mm MIN / mm MAX
(inches MIN / inches MAX)
5.00 BSC
(0.197 BSC)
4.00 BSC
(0.157 BSC)
0.80 / 1.00
(0.031 / 0.039)
0.10
(0.004)
0.95 BSC
(0.037 BSC)
0.74 / 0.83
(0.029 / 0.033)
0.30 / 0.45
(0.012 / 0.018)
3.03 / 3.10
(0.119 / 0.122)
2.53 / 2.60
(0.100 / 0.102)
0.35 / 0.45 x 45º
(0.014 / 0.018 x 45º)
Pin 1
Pin 1Pin 8
0.20 REF
(0.008 REF)
Recommended PCB Land Pattern
4.50
(0.177)
0.45
(0.018)
1.20
(0.047)
3.10
(0.122)
2.60
(0.102)
0.95
(0.037)
0.35 x 45º
(0.014 x 45º)
NOTE:
The exposed metal pad on the back of the D2 package should
be connected to GND. Pad is not suitable for carrying current.
K0=1.90 ± 0.10
B0=5.40 ± 0.10
5º MAX
A0=4.25 ± 0.10
5º MAX
0.30 ± 0.05
(0.05)
(0.05)
R0.75 TYP
8.00 ± 0.10
2.00 ± 0.05
4.00 ± 0.10 See Note #2
12.00 ± 0.30
5.50 ± 0.05
1.75 ± 0.10
∅1.50 (MIN)
∅1.55 ± 0.05
NOTES:
1. A
0
& B0 measured at 0.3mm above base of pocket.
2. 10 pitches cumulative tol. ± 0.2mm
3. ( ) Reference dimensions only.
4. Unless otherwise specified, all dimensions in millimeters.
Embossment
Embossed Carrier
Top Cover
T ape Thickness
0.102 MAX.
(0.004 MAX.)
330.2 DIA.
(13.00 DIA.)
For additional information please visit our website at: www.ixysic.com
IXYS Integrated Circuits Division makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make
changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in IXYS Integrated
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The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other
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