Datasheet IXDN414YM, IXDN414PI, IXDN414CM, IXDN414CI, IXDI414YM Datasheet (IXYS)

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IXDN414PI / N414CI / N414CM / N414YI / N414YM IXDI414PI / I414CI / I414CM / I414YI / I414YM

14 Ampere Low-Side Ultrafast MOSFET Drivers

Features

• Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes

• Latch-Up Protected Over Entire Operating Range

• High Peak Output Current: 14A Peak

• Wide Operating Range: 4.5V to 25V

• High Capacitive Load Drive Capability: 15nF in <30ns

• Matched Rise And Fall Times

• Low Propagation Delay Time

• Low Output Impedance

• Low Supply Current

Applications

• Driving MOSFETs and IGBTs

• Motor Controls

• Line Drivers

• Pulse Generators

• Local Power ON/OFF Switch

• Switch Mode Power Supplies (SMPS)

• DC to DC Converters

• Pulse Transformer Driver

• Class D Switching Amplifiers

General Description

The IXDI414/IXDN414 is a high speed high current gate driver specifically designed to drive the largest MOSFETs and IGBTs to their minimum switching time and maximum practical frequency limits. The IXDI/N414 can source and sink 14A of peak current while producing voltage rise and fall times of less than 30ns to drive the latest IXYS MOSFETs & IGBTs. The input of the driver is compatible with TTL or CMOS and is fully immune to latch up over the entire operating range. Designed with small internal delays, a patent-pending circuit virtually eliminates transistor cross conduction and current shootthrough. Improved speed and drive capabilities are further enhanced by very low, matched rise and fall times.

The IXDN414 is configured as a non-inverting gate driver and the IXDI414 is an inverting gate driver.

The IXDN414/IXDI414 family are available in standard 8 pin P-DIP (PI), 5-pin TO-220 (CI, CM) and TO-263 (YI, YM) surface-mount packages.

Figure 1 - IXDN414 14A Non-Inverting Gate Driver Functional Block Diagram

Vcc

GND

* Patent Pending

ANTI-CROSS

CONDUCTION

CIRCUIT *

Vcc

OUT

GND

First Release

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IXDN414PI / N414CI / N414CM / N414YI / N414YM IXDI414PI / I414CI / I414CM / I414YI / I414YM

Figure 2 - IXDI414 Inverting 14A Gate Driver Functional Block Diagram

Vcc

GND

Pin Description And Configuration

SYMBOL FUNCTION DESCRIPTION

VCC Supply Voltage

IN Input Input signal-TTL or CMOS compatible .

OUT Output

GND Ground

VCC

GND

8 PIN DIP (PI)

I X D X 4 1 4

VCC

OUT

GND

Vcc

ANTI-CROSS

CONDUCTION

CIRCUIT *

OUT

GND

Positive power-supply voltage input. This pin provides power to the entire chip. The rang e for this voltage is from 4.5V to 25V.

Driver Output. For application purposes, this pin is connected via an external resistor to a Gate of a MOSFET/IGBT . The system ground pin. Internally connected to all circuitry, this pin provides ground reference for the entire chip. This pin should be connected to a low noise analog ground plane for optimum performance.

IXDX414CI

1 2 3 4 5

Vcc OUT GND

IN NC

IXDX414YI

TO220 (CI, CM) TO263 (YI, YM)

* Patent Pending

ORDERING INFORMATION

Part Number Package Type Temp. Range Configuration

IXDN414PI 8-Pin PDIP IXDN414CI 5-Pin TO-220 IXDN414CM 5-Pin TO-220 IXDN414YI 5-Pin TO-263 IXDN414YM 5-Pin TO-263 IXDI414PI 8-Pin PDIP IXDI414CI 5-Pin TO-220 IXDI414CM 5-Pin TO-220 IXDI414YI 5-Pin TO-263 IXDI414YM 5-Pin TO-263

NOTE: Mounting or solder tabs on all packages are connected to ground

-40°C to +85°C

-55°C to +125°C

-40°C to +85°C

-55°C to +125°C

-40°C to +85°C

-55°C to +125°C

-40°C to +85°C

-55°C to +125°C

Non Inverting

Inverting

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IXDN414PI / N414CI / N414CM / N414YI / N414YM IXDI414PI / I414CI / I414CM / I414YI / I414YM

Absolute Maximum Ratings (Note 1)

Parameter Value

Supply Voltage 25V All Other Pins

Power Dissipation

≤85oC: TO220 (CI), TO263 (YI)

CASE

≤125oC: TO220 (CM), TO263 (YM)

CASE

Power Dissipation, T

8 Pin PDIP (PI) 975mW TO220 (CI, CM), TO263 (YI, YM) 2W

Derating Factors (to Ambient)

8 Pin PDIP (PI) TO220 (CI, CM), TO263 (YI, YM)

Storage Temperature Soldering Lead Temperature

(10 seconds maximum)

AMBIENT

≤25oC

-0.3V to VCC + 0.3V

16W 16W

7.6mW/oC

0.1W/oC

-65oC to 150oC 300oC

Operating Ratings

Parameter Value

Maximum Junction Temperature Operating Temperature Range Thermal Impedance (Junction To Case)

TO220 (CI, CM), TO263 (YI, YM) (θ

)

150oC

-40oC to 85oC

0.55oC/W

Electrical Characteristics

Unless otherwise noted, TA = 25 oC, 4.5V ≤ V All voltage measurements with respect to GND. Device configured as described in Test Conditions.

Symbol Parameter Test Conditions Min Typ Max Units

High input voltage 3.5 V VIL Low input voltage 0.8 V VIN Input voltage range -5 V IIN Input current

VOH High output voltage V VOL Low output voltage 0.025 V ROH Output resistance

@ Output high ROL Output resistance

@ Output Low I

Peak output current VCC is 18V

PEAK

Continuous output

current tR Rise time

tF Fall time t

On-time propagation

ONDLY

delay t

Off-time propagation

OFFDLY

delay

(1)

VCC Power supply voltage 4.5 18 25 V ICC Power supply current V

(1)

See Figures 3a and 3b

Note 1: Operating the device beyond parameters with listed “Absolute Maximum Ratings” may cause permanent damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed. Exposure to absolute maximum rated conditions for extended periods may affect device reliability.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when handling and assembling this component.

Specifications subject to change without notice

≤ 25V .

0V ≤ V

≤

-10 10

- 0.025 V

= 10mA, V

OUT

= 18V

600 1000

= 10mA, V

OUT

= 18V 600 1000

14 A

8 Pin Dip (PI)

(Limited by pkg power dissipat ion)

3 4 A

TO220 (CI), TO263 (YI)

=15nF Vcc=18V 22 27 ns

=15nF Vcc=18V 20 25 ns

=15nF Vcc=18V 30 33 ns

=15nF Vcc=18V 31 34 ns

= 3.5V = 0V

= + VCC

1 0 3

+ 0.3 V

10 10

mΩ mΩ

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IXDN414PI / N414CI / N414CM / N414YI / N414YM IXDI414PI / I414CI / I414CM / I414YI / I414YM

Figure 3a - Characteristics Test Diagram

5.0V 10uF

25V

Figure 3b - Timing Diagrams

Non-Inverting (IXDN414) Timing Diagram

90%

INPUT

2.5V 10%

ONDLY

Vcc

IXDI414

Vcc

IXDN414

15nF

Agilent 1147A Current Probe

MIN

OFFDLY

Vcc

90%

OUTPUT

10%

Inverting (IXDI414) Timing Diagram

90%

INPUT

OUTPUT

2.5V 10%

VCC 90%

10%

ONDLY

MIN

OFFDLY

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IXDN414PI / N414CI / N414CM / N414YI / N414YM

)

IXDI414PI / I414CI / I414CM / I414YI / I414YM

Typical Performance Characteristics

Fig. 4

Rise Time vs. Supply Voltage

CL=15,000 pF

7,500 pF

Rise Time (ns)

8 1012141618

3,600 pF

S u p p ly Volta g e (V)

Fig. 6

Rise And Fall Times vs. Case Tem perature

= 15 nF, Vcc = 18V

Fig. 5

Fall Time (ns)

81012141618

Fall Time vs. Supply Voltage

CL=15,000 pF

7,500 pF

3,600 pF

Supply Voltage (V)

Fig. 7

Rise Time vs. Load Capacitance

14V

10V 12V

18V

16V

Time (ns)

-40 -20 0 20 40 60 80 100 120

Temperature (°C

Fig. 8

Fall Tim e vs. Load Capacitance

14V

12V

Fall Time (ns)

0k 5k 10k 15k 20k

Load Capa citance (pF)

16V

10V

18V

Rise Time (ns)

0k 5k 10k 15k 20k

Load Capa citance (pF)

Fig. 9

3.2

3.0

2.8

2.6

2.4

2.2

Max / Min Input (V)

2.0

1.8

1.6

-60 -40 -20 0 20 40 60 80 100

Max / Min Input vs. Case Temperature

=18V CL=15nF

Minimum Input High

Maximum Input Low

Tempe rature (oC)

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IXDN414PI / N414CI / N414CM / N414YI / N414YM IXDI414PI / I414CI / I414CM / I414YI / I414YM

Fig. 11

Supply Current vs. Load Capacitance

Vcc=18V

1000

2 MHz

100

1 MHz

500 kHz

Supply Current (mA)

100 kHz 50 kHz

1k 10k 100k

Load Capa citance (pF)

Fig. 13

Supply Current vs. Load Capacitance

Vcc=12V

1000

100

2 MHz 1 MHz

500 kHz

Supply Current (mA)

100 kHz

50 kHz

1k 10k 100k

Load Capa citance (pF)

Fig. 15

Supply Current vs. Load Capacitance

Vcc=8V

1000

Fig. 12

1000

100

Supply Current (mA)

0.1

Fig. 14

1000

100

Supply Current (mA)

0.1

Fig. 16

1000

S up p ly C u rre n t vs . F re q u en c y

Vcc=18V

CL= 30 nF

15 nF

5000 pF

2000 pF

10 100 1000 10000

Frequency (kHz)

Supply Current vs. Frequency

Vcc=12 V

CL = 30 nF

15 nF

5000 pF

2000 pF

10 100 1000 10000

Frequency (kHz)

Supply Current vs. Frequency

Vcc=8V

100

2 MHz

1 MHz

500 kHz

S u pp ly C u rre n t (mA)

100 kHz

50 kHz

1k 10k 100k

Load Cap acitance (pF)

100

Supply Current (mA)

0.1 10 100 1000 10000

CL= 30 nF

15 nF

5000 pF

2000 pF

Frequency (kHz)

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IXDN414PI / N414CI / N414CM / N414YI / N414YM

(

)

IXDI414PI / I414CI / I414CM / I414YI / I414YM

Fig. 17

Propagation Delay (ns)

8 1012141618

Propagation Delay vs. Supply Voltage

=15nF VIN=5V@1kHz

OFFDLY

ONDLY

Supply Voltage (V)

Fig. 19

Time (ns)

Propagation Delay vs. Case Temperature

= 2500pF, VCC = 18V

ONDLY

OFFDLY

Fig. 18

Propagation Delay (ns)

24681012

Propagation Delay vs. Input Voltage

=15nF VCC=15V

ONDLY

OFFDLY

Input Voltage (V)

Fig. 20

Quiescent Supply Current vs. Case Temperature

=18V VIN=5V@1kHz

0.60

0.58

0.56

0.54

-40-200 20406080100120

Temperature (°C

Fig. 21

P Channel Output Current vs. Case Temperature

=18V CL=.1uF

P Channel Output Current (A)

-40-200 20406080100

Temperature (oC)

0.52

Quiescent Supply Current (mA)

0.50

-40-200 20406080

Fig. 22

Temperature

N C hannel Output Current vs. Case Tem perature

=18V CL=.1uF

N C hannel Output Current (A)

-40-200 20406080100

Temperature (oC)

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IXDN414PI / N414CI / N414CM / N414YI / N414YM IXDI414PI / I414CI / I414CM / I414YI / I414YM

Fig. 23

Enable Threshold (V)

8 101214161820222426

Enable Threshold vs. Supply Voltage

Supply Voltage (V)

Fig. 25

Low-State Output Resistance

vs . S u p p ly Voltag e

1.0

0.8

0.6

0.4

0.2

Low-State Output Resistance (Ohm s)

0.0 8

10 15 20 25

Supply Voltage (V)

Fig. 24

1.0

0.8

0.6

0.4

0.2

High State Output Resistance (Ohm)

0.0 8

Fig. 26

-2

-4

-6

-8

-10

-12

-14

-16

-18

-20

P Channel Output Current (A)

-22

-24

High State Output Resistance

vs. Su pply V o lta g e

10 15 20 25

Supply Voltage (V)

VCC vs. P Channel Output Current

=.1uF VIN=0-5V@1kHz

10 15 20 25

Vcc

Fig. 27

24 22 20 18 16 14 12 10

8 6 4

N Channel Output Current (A)

2 0

Vcc vs. N Channel Output Current

=.1uF VIN=0-5V@ 1kHz

10 15 20 25

Vcc

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IXDN414PI / N414CI / N414CM / N414YI / N414YM IXDI414PI / I414CI / I414CM / I414YI / I414YM

Supply Bypassing, Grounding Practices and Output Lead inductance

When designing a circuit to drive a high speed MOSFET utilizing the IXDN414/IXDI414, it is very important to observe certain design criteria in order to optimize performance of the driver. Particular attention needs to be paid to Supply

Bypassing, Grounding, and minimizing the Output Lead Inductance.

Say, for example, we are using the IXDN414 to charge a 5000pF capacitive load from 0 to 25 volts in 25ns.

Using the formula: I= ∆V C / ∆t, where ∆V=25V C=5000pF & ∆t=25ns we can determine that to charge 5000pF to 25 volts in 25ns will take a constant current of 5A. (In reality, the charging current won’t be constant, and will peak somewhere around 8A).

SUPPLY BYPASSING

In order for our design to turn the load on properly, the IXDN414 must be able to draw this 5A of current from the power supply in the 25ns. This means that there must be very low impedance between the driver and the power supply. The most common method of achieving this low impedance is to bypass the power supply at the driver with a capacitance value that is a magnitude larger than the load capacitance. Usually, this would be achieved by placing two different types of bypassing capacitors, with complementary impedance curves, very close to the driver itself. (These capacitors should be carefully selected, low inductance, low resistance, high-pulse currentservice capacitors). Lead lengths may radiate at high frequency due to inductance, so care should be taken to keep the lengths of the leads between these bypass capacitors and the IXDN414 to an absolute minimum.

GROUNDING

In order for the design to turn the load off properly, the IXDN414 must be able to drain this 5A of current into an adequate grounding system. There are three paths for returning current that need to be considered: Path #1 is between the IXDN414 and its load. Path #2 is between the IXDN414 and its power supply. Path #3 is between the IXDN414 and whatever logic is driving it. All three of these paths should be as low in resistance and inductance as possible, and thus as short as practical. In addition, every effort should be made to keep these three ground paths distinctly separate. Otherwise, the returning ground current from the load may develop a voltage that would have a detrimental effect on the logic line driving the IXDN414.

OUTPUT LEAD INDUCTANCE

Of equal importance to Supply Bypassing and Grounding are issues related to the Output Lead Inductance. Every effort should be made to keep the leads between the driver and it’s load as short and wide as possible. If the driver must be placed farther than 2” (5mm) from the load, then the output leads should be treated as transmission lines. In this case, a twisted-pair should be considered, and the return line of each twisted pair should be placed as close as possible to the ground pin of the driver, and connected directly to the ground terminal of the load.

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IXDN414PI / N414CI / N414CM / N414YI / N414YM IXDI414PI / I414CI / I414CM / I414YI / I414YM

IXYS Corporation 3540 Bassett St; Santa Clara, CA 95054 Tel: 408-982-0700; Fax: 408-496-0670 e-mail: [email protected] www.ixys.com

IXYS Semiconductor GmbH Edisonstrasse15 ; D-68623; Lampertheim Tel: +49-6206-503-0; Fax: +49-6206-503627 e-mail: [email protected]

Directed Energy, Inc. An IXYS Company 2401 Research Blvd. Ste. 108, Ft. Collins, CO 80526 Tel: 970-493-1901; Fax: 970-493-1903 e-mail: [email protected] www.directedenergy.com

Doc #9200-0244 R1