Page 1
First Release
Copyright © IXYS CORPORATION 2002
Features
• Built using the advantages and compatibility
of CMOS and IXYS HDMOSTM processes
• Latch-Up Protected Over Entire
Operating Range
• High Peak Output Current: 2A Peak
• Wide Operating Range: 4.5V to 25V
• High Capacitive Load
Drive Capability: 1000pF in <10ns
• Matched Rise And Fall Times
• Low Propagation Delay Time
• Low Output Impedance
• Low Supply Current
• Two Drivers in Single Chip
Applications
• Driving MOSFETs and IGBTs
• Motor Controls
• Line Drivers
• Pulse Generators
• Local Power ON/OFF Switch
• Switch Mode Power Supplies (SMPS)
• DC to DC Converters
• Pulse Transformer Driver
• Class D Switching Amplifiers
General Description
The IXDN402/IXDI402/IXDF402 consists of two 2 Amp
CMOS high speed MOSFET drivers. Each output can
source and sink 2A of peak current while producing voltage
rise and fall times of less than 15ns to drive the latest IXYS
MOSFETs & IGBTs. The input of the driver is TTL or CMOS
compatible and is fully immune to latch up over the entire
operating range. A patent-pending circuit virtually eliminates
cross conduction and current shoot-through. Improved
speed and drive capabilities are further enhanced by very
low and matched rise and fall times.
The IXDN402 is configured as a dual non-inverting gate
driver, the IXDI402 as a dual inverting gate driver, and the
IXDF402 as a dual inverting + non-inverting gate driver.
The IXDN402/IXDI402/IXDF402 family are available in the
standard 8 pin P-DIP (PI), SOP-8 (SI) and SOP-16 (SI-16)
packages respectively.
IXDN402PI / N402SI / N402SI-16 IXDI402PI / I402SI / I402SI-16
IXDF402PI / F402SI / F402SI-16
2 Ampere Dual Low-Side Ultrafast MOSFET Drivers
Part Number Package Type Temp. Range Configuration
IXDN402PI 8-Pin PDIP
IXDN402SI 8-Pin SOIC
IXDN402SI-16 16-Pin SOIC
-40°C to +85°C
Dual Non Inverting
IXDI402PI 8-Pin PDIP
IXDI402SI 8-Pin SOIC
IXDI402SI-16 16-Pin SOIC
-40°C to +85°C
Dual Inverting
IXDF402PI 8-Pin PDIP
IXDF402SI 8-Pin SOIC
IXDF402SI-16 16-Pin SOIC
-40°C to +85°C
Inverting + Non Inverting
Ordering Information
NOTE: Mounting or solder tabs on all packages are connected to ground
Page 2
2
IXDN402PI / N402SI / N402SI-16 IXDN402PI / N402SI / N402SI-16
IXDF402PI / F402SI / F402SI-16
N
P
N
P
OUT A
Vcc
OUT B
IN A
IN B
GND
ANTI-CROSS
CONDUCTION
CIRCUIT *
ANTI-CROSS
CONDUCTION
CIRCUIT *
Figure 1 - IXDN402 Dual 2A Non-Inverting Gate Driver Functional Block Diagram
Figure 2 - IXDI402 Dual Inverting 2A Gate Driver Functional Block Diagram
N
P
N
P
OUT A
Vcc
OUT B
IN A
IN B
GND
ANTI-CROSS
CONDUCTION
CIRCUIT *
ANTI-CROSS
CONDUCTION
CIRCUIT *
Figure 3 - IXDF402 Inverting + Non-Inverting 2A Gate Driver Functional Block Diagram
N
P
N
P
OUT A
Vcc
OUT B
IN A
IN B
GND
ANTI-CROSS
CONDUCTION
CIRCUIT *
ANTI-CROSS
CONDUCTION
CIRCUIT *
* Patent Pending
Page 3
3
IXDN402PI / N402SI / N402SI-16 IXDN402PI / N402SI / N402SI-16
IXDF402PI / F402SI / F402SI-16
Unless otherwise noted, TA = 25 oC, 4.5V ≤ V
CC
≤ 25V .
All voltage measurements with respect to GND. IXDD402 configured as described in Test Conditions. All specifications are for one channel.
Electrical Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
V
IH
High input voltage 3 V
VIL Low input voltage 2.4 V
VIN Input voltage range -5 V
CC
+ 0.3 V
IIN Input current
0V ≤ V
IN
≤ V
CC
-10 10
µA
VOH High output voltage V
CC
- 0.025 V
VOL Low output voltage 0.025 V
ROH Output resistance
@ Output high
V
CC
= 18V
3.7 4
Ω
ROL Output resistance
@ Output Low
V
CC
= 18V 2.5 3
Ω
I
PEAK
Peak output current VCC is 18V
2 A
I
DC
Continuous output
current
1 A
tR Rise time CL=1000pF Vcc=18V 7 8 10 ns
tF Fall time CL=1000pF Vcc=18V 7 8 9 ns
t
ONDLY
On-time propagation
delay
CL=1000pF Vcc=18V 27 28 32 ns
t
OFFDLY
Off-time propagation
delay
CL=1000pF Vcc=18V 25 26 30 ns
VCC Power supply voltage 4.5 18 25 V
I
CC
Power supply current V
IN
= 3.5V
V
IN
= 0V
V
IN
= + VCC
1 0 3
10
10
mA
µA
µA
Absolute Maximum Ratings (Note 1)
Parameter Value
Supply Voltage 25 V
All Other Pins -0.3 V to VCC + 0.3 V
Junction Temperature
150 oC
Storage Temperature
-65 oC to 150 oC
Lead Temperature (10 sec)
300 oC
Operating Ratings
Parameter Value
Operating Temperature Range
-40 oC to 85 oC
Thermal Impedance (To Ambient)
8 Pin PDIP (PI) (θJA)
210 oC/W
8 Pin SOIC (SI) (θ
JA
)
190 oC/W
16 Pin SOIC (SI-16) (θ
JA
)
190 oC/W
Specifications Subject To Change Without Notice
Page 4
4
IXDN402PI / N402SI / N402SI-16 IXDN402PI / N402SI / N402SI-16
IXDF402PI / F402SI / F402SI-16
Pin Description
Figure 4 - Characteristics Test Diagram
Note 1: Operating the device beyond the parameters listed as “Absolute Maximum Ratings” may cause permanent
damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not
guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed.
Exposure to absolute maximum rated conditions for extended periods may affect device reliability.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when
handling and assembling this component.
1
2
3
4
5
6
7
8
NC
NC
In A
Gnd
In B Out B
Vcc
Out A
10uF
25V
Vcc
1000 pF1000 pF
Agilent 1147A
Current Probe
Agilent 1147A
Current Probe
SYMBOL FUNCTION DESCRIPTION
IN A A Channel Input A Channel Input signal-TTL or CMOS compatible.
GND Ground
The system ground pin. Internally connected to all circu itry, this pin provides
ground reference for the entire chip. Th is pin should be connected to a low
noise analog ground plane for optimum performance.
IN B B Channel Input B Channel Input signal-TTL or CMOS compatible.
OUT B B Channel Output
B Channel Driver output. For application purposes, this pin is connected via
a resistor to a gate of a MOSFET/IGBT.
VCC Supply Voltage
Positive power-supply voltage input. This pin provides power to the entire
chip. The range for this voltage is from 4.5V to 25V.
OUT A A Channel Output
A Channel Driver output. For application purposes, this pin is connected via
a resistor to a gate of a MOSFET/IGBT.
Page 5
5
IXDN402PI / N402SI / N402SI-16 IXDN402PI / N402SI / N402SI-16
IXDF402PI / F402SI / F402SI-16
Ou tpu t Fall T imes vs. Load Capacitance
0
5
10
15
20
25
30
35
40
45
50
0 1000 2000 3000 4000 5000 6000 7000
Load Capacitan ce (pF )
Fall Times (ns)
8V
14V
16V
Ou tpu t R ise Times v s. Load Capa citance
0
10
20
30
40
50
60
70
80
90
0 1000 2000 3000 4000 5000 6000 7000
Load Capacitance (pF)
Rise Time (ns)
8V
10V
12V
14V
16V
18V
Output Rise Time vs. Supply Voltage
CL = 100pF to 6800pF
0
10
20
30
40
50
60
70
80
90
8 1012141618
Supply Voltage (V)
Rise Time (ns
)
100 pF
470 pF
1000 pF
2200 pF
3900 pF
6800 pF
Ou tpu t Rise And Fall Tim es vs. Case T em perature
CL = 1000pF , Vcc = 18V
0
2
4
6
8
10
12
-60 -40 -20 0 20 40 60 80 100 120 140
Tem perature (C)
Time (ns)
t
R
t
F
Output Fall Time vs. Supply Voltage
CL = 100pF to 6800pF
0
10
20
30
40
50
60
8 1012141618
Supply Voltage (V)
Fall Time (ns
)
100 pF
470 pF
1000 pF
2200 pF
3900
p
F
6800 pF
Fig. 3
Typical Performance Characteristics
Fig. 4
Fig. 5
Fig. 6
Fig. 7
Fig. 8
M ax / M in In put v s. Tem perature
CL = 1000 p F Vcc = 18V
1.5
1.7
1.9
2.1
2.3
2.5
2.7
2.9
3.1
3.3
3.5
-60 -40 -20 0 20 40 60 80 100 120 140
Tem peratu re (C)
Max / Min Input Voltage
Mini mum Input High
Maxi mu m I n p u t Low
Page 6
6
IXDN402PI / N402SI / N402SI-16 IXDN402PI / N402SI / N402SI-16
IXDF402PI / F402SI / F402SI-16
Supply Current vs. Load Capacitance
Vcc = 18V
0
10
20
30
40
50
60
70
80
90
100
100 1000 10000
Load Capacitance (pF)
Supply Current (mA)
10 kHz
50 kHz
100 kHz
500 kHz
1 MHz
2 MHz
Supply Cu rrent vs. Frequency
Vcc = 12V
0.01
0.1
1
10
100
1000
1 10 100 1000 10000
Frequency (kHz)
Supply Current (mA)
470 pF
3900 pF
6800
p
F
Supply Cu rrent v s. Frequen cy
Vcc = 18V
0.01
0.1
1
10
100
1000
1 10 100 1000 10000
Frequency (kHz)
Supply Current (mA)
100 pF
470 pF
1000 pF
3900 pF
6800 p
F
2200 pF
Supply Current vs. Load Capacitance
Vcc = 12V
0
10
20
30
40
50
60
70
80
90
100
100 1000 10000
Load Capacitance (pF)
Supply Current (mA)
10 kHz
50 kHz
100 kHz
500 kHz
1 Mhz
2 MHz
Fig. 10
Fig. 12
Fig. 14
Supply Current vs. Load Capacitance
Vcc = 8V
0
10
20
30
40
50
60
70
80
90
100
100 1000 10000
Load Capacitance (pF)
Supply Current (mA)
10 kHz
50 kHz
100 kHz
500 kHz
1 MHz
2 MHz
Supp ly Cu rren t v s. Frequ en cy
Vcc = 8V
0.01
0.1
1
10
100
1000
1 10 100 1000 10000
Freque ncy (kH z )
Supply Current (mA)
100 pF
47
0 p
F
2200 pF
3900 pF
Fig. 9
Fig. 11
Fig. 13
Page 7
7
IXDN402PI / N402SI / N402SI-16 IXDN402PI / N402SI / N402SI-16
IXDF402PI / F402SI / F402SI-16
Q uiescent Su pply Cu rrent vs. Tem perature
Vcc = 18V , Vin = 5V@1kHz , CL = 1000pF
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
-60 -40 -20 0 20 40 60 80 100 120 140
Tem perature (C)
Quiescent Vcc In
p
ut Current
(
mA
)
Propagation Delay vs. Input Voltage
CL = 1000 pF Vcc = 15V
0
5
10
15
20
25
30
35
40
45
50
23456789101112
Input Voltage (V)
Propagation Delay (ns)
t
ONDLY
t
OFFDLY
Propagation Delay Times vs. Temperature
CL = 1000pF, Vcc = 18V
10
15
20
25
30
35
40
-60 -40 -20 0 20 40 60 80 100 120 140
Temperature (C)
Time (ns)
t
ONDLY
t
OFFDLY
Propagation Delay vs. Supply Voltage
CL=1000 pF Vin=5V@1KH z
0
5
10
15
20
25
30
35
40
45
8 1012141618
Supply Voltage (V)
Propagation Delay (ns)
t
ONDLY
t
OFFDLY
Fig. 16
Fig. 15
Fig. 17 Fig. 18
Fig. 19
Fig. 20
N Channel Sink Output C urr ent vs. T emperat ure
Vcc = 18V CL = 1000 pF
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
- 60 - 40 - 20 0 20 40 60 80 100 120 140
Temperat ur e (C )
N Channel Output Current (A)
P Channel Output Source Current vs. Temperature
Vcc = 18V, CL = 1000 pF
0
0.5
1
1.5
2
2.5
3
3.5
4
-60 -40 -20 0 20 40 60 80 100 120 140
Tem perature (C)
P Channel Output Current (A)
Page 8
8
IXDN402PI / N402SI / N402SI-16 IXDN402PI / N402SI / N402SI-16
IXDF402PI / F402SI / F402SI-16
Vcc vs. N Channel Source Output Current
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
7 9 11 13 15 17 19 21 23 25
Vcc (V )
N Channel Output Current (
A
Low State Output Resistance vs. Supply Voltage
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
7 9 11 13 15 17 19 21 23 25
Supply Voltage (V)
Low State Output Resistance (Ohms)
High State Output R esistance vs. Supply Voltage
0
1
2
3
4
5
6
7
8
7 9 11 13 15 17 19 21 23 25
Supply Voltage (V)
High State Output Resistance (Ohms)
Fig. 21
Fig. 22
Fig. 23
Fig. 24
Vcc vs. P Channel Output Current
-3.5
-3
-2.5
-2
-1.5
-1
-0.5
0
7 9 11 13 15 17 19 21 23 25
Vcc (V)
P Channel Output Current (A)
Page 9
9
IXDN402PI / N402SI / N402SI-16 IXDN402PI / N402SI / N402SI-16
IXDF402PI / F402SI / F402SI-16
PIN CONFIGURATIONS
1
2
3
4
5
6
7
8
IN A
GND
INB
OUT A
V
S
OUT B
NC
NC
8 Lead PDIP (PI)
8 Pin SOIC (SI)
IXDN402
1
2
3
4
5
6
7
8
IN A
GND
INB
OUT A
V
S
OUT B
NC
NC
8 Lead PDIP (PI)
8 Pin SOIC (SI)
IXDI402
16 Pin SOIC
IXDN402SI-16
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
NC
IN A
NC
GND
GND
NC
IN B
NC
NC
OUT B
OUT B
VCC
VCC
OUT A
OUT A
NC
1
2
3
4
5
6
7
8
IN A
GND
INB
OUT A
V
S
OUT B
NC
NC
8 Lead PDIP (PI)
8 Pin SOIC (SI)
IXDF402
16 Pin SOIC
IXDI402SI-16
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
NC
IN A
NC
GND
GND
NC
IN B
NC
NC
OUT B
OUT B
VCC
VCC
OUT A
OUT A
NC
16 Pin SOIC
IXDF402SI-16
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
NC
IN A
NC
GND
GND
NC
IN B
NC
NC
OUT B
OUT B
VCC
VCC
OUT A
OUT A
NC
When designing a circuit to drive a high speed MOSFET
utilizing the IXDN402/IXDI402/IXDF402, it is very important to
observe certain design criteria in order to optimize performance
of the driver. Particular attention needs to be paid to Supply
Bypassing, Grounding, and minimizing the Output Lead
Inductance.
Say, for example, we are using the IXDN402 to charge a 1500pF
capacitive load from 0 to 25 volts in 25ns.
Using the formula: I= ∆V C / ∆t, where ∆V=25V C=1500pF &
∆t=25ns, we can determine that to charge 1500pF to 25 volts
in 25ns will take a constant current of 1.5A. (In reality, the
charging current won’t be constant, and will peak somewhere
around 2A).
SUPPLY BYPASSING
In order for our design to turn the load on properly, the IXDN402
must be able to draw this 1.5A of current from the power supply
in the 25ns. This means that there must be very low impedance
between the driver and the power supply. The most common
method of achieving this low impedance is to bypass the power
supply at the driver with a capacitance value that is an order of
magnitude larger than the load capacitance. Usually, this
would be achieved by placing two different types of bypassing
capacitors, with complementary impedance curves, very close
to the driver itself. (These capacitors should be carefully
selected and should have low inductance, low resistance and
high-pulse current-service ratings). Lead lengths may radiate
at high frequency due to inductance, so care should be taken
to keep the lengths of the leads between these bypass
capacitors and the IXDN402 to an absolute minimum.
GROUNDING
In order for the design to turn the load off properly, the IXDN402
must be able to drain this 1.5A of current into an adequate
grounding system. There are three paths for returning current
that need to be considered: Path #1 is between the IXDN402
and its load. Path #2 is between the IXDN402 and its power
supply. Path #3 is between the IXDN402 and whatever logic is
driving it. All three of these paths should be as low in resistance
and inductance as possible, and thus as short as practical. In
addition, every effort should be made to keep these three
ground paths distinctly separate. Otherwise, the returning
ground current from the load may develop a voltage that would
have a detrimental effect on the logic line driving the IXDN402.
OUTPUT LEAD INDUCTANCE
Of equal importance to Supply Bypassing and Grounding are
issues related to the Output Lead Inductance. Every effort
should be made to keep the leads between the driver and its
load as short and wide as possible. If the driver must be placed
farther than 2” (5mm) from the load, then the output leads
should be treated as transmission lines. In this case, a twistedpair should be considered, and the return line of each twisted
pair should be placed as close as possible to
the ground pin
of the driver, and connected directly to the ground terminal
of the load.
Supply Bypassing, Grounding Practices And Output Lead inductance
Page 10
10
IXDN402PI / N402SI / N402SI-16 IXDN402PI / N402SI / N402SI-16
IXDF402PI / F402SI / F402SI-16
IXYS Semiconductor GmbH
Edisonstrasse15 ; D-68623; Lampertheim
Tel: +49-6206-503-0; Fax: +49-6206-503627
e-mail: [email protected]
IXYS Corporation
3540 Bassett St; Santa Clara, CA 95054
Tel: 408-982-0700; Fax: 408-496-0670
e-mail: [email protected]
www.ixys.com
Directed Energy, Inc.
An IXYS Company
2401 Research Blvd. Ste. 108, Ft. Collins, CO 80526
Tel: 970-493-1901; Fax: 970-493-1903
e-mail: [email protected]
www.directedenergy.com
Doc #9200-0254 R1
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