Datasheet IXDN404, IXDI404, IXDF404 Datasheet (IXYS)

IXDN404 / IXDI404 / IXDF404

4 Ampere Dual Low-Side Ultrafast MOSFET Drivers

Features

• Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes

• Latch-Up Protected up to 0.5A

• High Peak Output Current: 4A Peak

• Wide Operating Range: 4.5V to 35V

• High Capacitive Load Drive Capability: 1800pF in <15ns

• Matched Rise And Fall Times

• Low Propagation Delay Time

• Low Output Impedance

• Low Supply Current

• Two Drivers in Single Chip

Applications

• Driving MOSFETs and IGBTs

• Motor Controls

• Line Drivers

• Pulse Generators

• Local Power ON/OFF Switch

• Switch Mode Power Supplies (SMPS)

• DC to DC Converters

• Pulse Transformer Driver

• Class D Switching Amplifiers

• Limiting di/dt Under Short Circuit

General Description

The IXDN404/IXDI404/IXDF404 is comprised of two 4 Ampere CMOS high speed MOSFET drivers. Each output can source and sink 4A of peak current while producing voltage rise and fall times of less than 15ns to drive the latest IXYS MOSFETs and IGBT's. The input of the driver is compatible with TTL or CMOS and is fully immune to latch up over the entire operating range. A patent-pending circuit virtually eliminates CMOS power supply cross conduction and current shoot-through. Improved speed and drive capabilities are further enhanced by very low, matched rise and fall times.

The IXDN404 is configured as a dual non-inverting gate driver, the IXDI404 is a dual inverting gate driver, and the IXDF404 is a dual inverting + non-inverting gate driver.

The IXDN404/IXDI404/IXDF404 family are available in the standard 8 pin P-DIP (PI), SOIC-8 (SIA) and SOIC-16 (SIA-16) packages. For enhanced thermal performance, the SOP-8 and SOP-16 are also available in a package with an exposed grounded metal back as the SI and SI-16 repectively.

Ordering Information

Part Number Package Type Temp. Range Configuration

IXDN404PI 8-Pin PDIP IXDN404SI 8-Pin SOIC with Grounded Metal Back IXDN404SIA 8-Pin SOIC IXDN404SI-16 16-Pin SOIC with Grounded Metal Back IXDN404SIA-16 16-Pin SOIC IXDI404PI 8-Pin PDIP IXDI404SI 8-Pin SOIC with Grounded Metal Back IXDI404SIA 8-Pin SOIC IXDI404SI-16 16-Pin SOIC with Grounded Metal Back IXDI404SIA-16 16-Pin SOIC IXDF404PI 8-Pin PDIP IXDF404SI 8-Pin SOIC with Grounded Metal Back IXDF404SIA 8-Pin SOIC IXDF404SI-16 16-Pin SOIC with Grounded Metal Back IXDF404SIA-16 16-Pin SOIC

NOTE: Mounting or solder tabs on all packages are connected to ground

-55°C to +125°C

First Release

Dual Non

Inverting

Dual Inverting

Inverting +

Non Inverting

DS99018B(08/04)

IXDN404 / IXDI404 / IXDF404

D

A

D

A

D

A

Figure 1 - IXDN404 Dual 4A Non-Inverting Gate Driver Functional Block Diagram

Vcc

P

OUT A

N

P

OUT B

N

IN A

IN B

GN

NTI-CROSS

CONDUCTION

CIRCUIT *

ANTI-CROSS

CONDUCTION

CIRCUIT *

Figure 2 - IXDI404 Dual Inverting 4A Gate Driver Functional Block Diagram

Vcc

P

OUT A

N

IN A

NTI-CROSS

CONDUCTION

CIRCUIT *

P

OUT B

N

IN B

GN

ANTI-CROSS

CONDUCTION

CIRCUIT *

Figure 3 - IXDF404 Inverting + Non-Inverting 4A Gate Driver Functional Block Diagram

Vcc

P

OUT A

N

P

OUT B

N

* Patent Pending

IN A

IN B

GN

NTI-CROSS

CONDUCTION

CIRCUIT *

ANTI-CROSS

CONDUCTION

CIRCUIT *

2

IXDN404 / IXDI404 / IXDF404

V

Absolute Maximum Ratings (Note 1)

Parameter

Supply Voltage 40V All Other Pins -0.3V to VCC + 0.3V

Junction Temperature

Storage Temperature

Soldering Lead Temperature (10 seconds maximum)

Thermal Resistance (Junction to Case) (θ

8 Pin SOIC (SI) 16 Pin SOIC (SI-16)

alue

150oC

-65oC to 150oC

300oC

)

10 K/W 10 K/W

JC

Electrical Characteristics

Unless otherwise noted, TA = 25 oC, 4.5V ≤ V All voltage measurements with respect to GND. Device configured as described in Test Conditions. All specifications are for one channel.

≤ 35V .

CC

Operating Ratings

Parameter Value

Operating Temperature Range

Thermal Resistance (To Ambient) 8 Pin PDIP (PI) (θJA) 120 K/W 8 Pin SOIC (SIA) 110 K/W 16 Pin SOIC (SIA-16) (θ

θ

with heat sink **

JA

Heat sink area of 1 cm 8 Pin SOIC 95 K/W 16 Pin SOIC-CT 95 K/W Heat sink area of 3 cm 8 Pin SOIC 85 K/W 16 Pin SOIC-CT 85 K/W

** Device soldered to metal back pane. Heat sink area is 1 oz.

copper on 1 side of 0.06" thick FR4 PC board.

) 110 K/W

JA

2

-55 oC to 125 oC

Symbol Parameter Test Conditions Min Typ Max Units

V

IH

VIL Low input voltage

VIN Input voltage range -5 V

IIN Input current

High input voltage

4.5V ≤ V

0V ≤ V

IN

CC

≤

V

18V

≤

18V

≤

CC

2.5 V

0.8 V

+ 0.3 V

CC

-10 10

A

µ

VOH High output voltage V

- 0.025 V

CC

VOL Low output voltage 0.025 V

ROH Output resistance

@ Output High

ROL Output resistance

V

CC

= 18V

2 2.5

V

= 18V 1.5 2

CC

Ω

@ Output Low

I

Peak output current VCC = 18V

PEAK

4 A

I

Continuous output

DC

1 A

current

tR Rise time CL=1800pF Vcc=18V 16 18 ns

tF Fall time CL=1800pF Vcc=18V 13 17 ns

t

On-time propagation

ONDLY

CL=1800pF Vcc=18V 36 40 ns

delay

t

Off-time propagation

OFFDLY

CL=1800pF Vcc=18V 35 39 ns

delay

VCC Power supply voltage 4.5 18 35 V

I

CC

Power supply current V

Specifications Subject To Change Without Notice

IN

V

IN

V

IN

= 3.5V = 0V

= + VCC

1 0 3

10 10

mA

A

µ

A

µ

Note 1: Operating the device beyond parameters with listed “Absolute Maximum Ratings” may cause permanent damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed. Exposure to absolute maximum rated conditions for extended periods may affect device reliability.

3

IXDN404 / IXDI404 / IXDF404

Electrical Characteristics

Unless otherwise noted, temperature over -55oC to 150oC, 4.5V ≤ V All voltage measurements with respect to GND. Device configured as described in Test Conditions. All specifications are for one channel.

Symbol Parameter Test Conditions Min Typ Max Units

V

IH

VIL Low input voltage

High input voltage

4.5V ≤ V

CC

VIN Input voltage range -5 V

IIN Input current

0V ≤ V

IN

≤

VOH High output voltage V

VOL Low output voltage 0.025 V

ROH Output resistance

@ Output High

ROL Output resistance

V

= 18V

CC

V

= 18V 2

CC

@ Output Low

I

Peak output current VCC = 18V

PEAK

I

Continuous output

DC

1 A

current

tR Rise time CL=1000pF Vcc=18V 11 ns

tF Fall time CL=1000pF Vcc=18V 13 ns

t

On-time propagation

ONDLY

CL=1000pF Vcc=18V 60 ns

delay

t

Off-time propagation

OFFDLY

CL=1000pF Vcc=18V 59 ns

delay

VCC Power supply voltage 4.5 18 35 V

I

CC

Power supply current V

Specifications Subject To Change Without Notice

IN

V

IN

V

IN

= 3.5V = 0V

= + VCC

V

18V

≤

18V

≤

CC

≤ 35V .

CC

2.4 V

0.8 V

+ 0.3 V

CC

-10 10

- 0.025 V

CC

3.4

A

µ

Ω

3.2 A

1 0 3

10 10

mA

A

µ

A

µ

4

IXDN404 / IXDI404 / IXDF404

Pin Description

SYMBOL FUNCTION DESCRIPTION

IN A A Channel Input A Channel Input signal-TTL or CMOS compatible.

The system ground pin. Internally connected to all circuitry, this pin provides

GND Ground

IN B B Channel Input B Channel Input signal-TTL or CMOS compatible.

OUT B B Channel Output

VCC Supply Voltage

OUT A A Channel Output

ground reference for the entire chip. This pin should be connected to a low noise analog ground plane for optimum performance.

B Channel Driver output. For application purposes, this pin is connected via a resistor to a gate of a MOSFET/IGBT. Positive power-supply voltage input. This pin provides power to the entire chip. The range for this voltage is from 4.5V to 35V. A Channel Driver output. For application purposes, this pin is connected via a resistor to a gate of a MOSFET/IGBT.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when handling and assembling this component.

Figure 4 - Characteristics Test Diagram

Vcc

10uF 25V

1

NC

2

In A

3

Gnd

4

In B Out B

Out A

Agilent 1147A Current Probe

NC

Vcc

8

7

6

5

Agilent 1147A Current Probe

1800 pF1800 pF

5

Typical Performance Characteristics

IXDN404 / IXDI404 / IXDF404

Fig. 5 Fig. 6

80

70

60

50

40

30

Rise Time (ns)

20

10

0

5 1015 2025 3035

Rise Times vs. Supply Voltage

10000pF

6800pF

4700pF 1800pF

1000pF

200pF

Fall Times (ns)

Supply Voltage (V)

Fig. 7

80

70

60

50

40

30

Rise Time (ns)

20

Output Ri se Ti mes vs. Load Capacitance

Fig. 8

8V

10V

12V

18V

25V 35V

Fall Time (ns)

80

70

60

50

40

30

20

10

0

5 1015202530 35

10000pF

6800pF

4700pF

1800pF 1000pF

200pF

Supply Voltage (V)

Output Fal l Times vs. Load Capac itance

80

70

60

50

40

30

20

Fall Times vs. Supply Voltage

8V

10V

12V

18V 25V

35V

10

0

0 1000 2000 3000 4000 5000 6000 7 000 8000 9000 10000

Load Capacitance (pF)

Fig. 9

14

12

10

Time (ns)

Rise And Fall Times vs. Temperature

C

= 1000pF, Vcc = 18V

L

t

R

t

F

8

6

4

2

0

-60 -10 40 90 140 190

Temperature (C)

10

0

0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000

Load Capacitance (pF)

Fig. 10

2.5

2.4

2.3

2.2

2.1

2

1.9

1.8

Max / Min Input Voltage

1.7

1.6

1.5

-60 -10 40 90 140 190

Max / Min Input vs. Temperature

C

= 1000pF, Vcc = 18V

L

Min Input High

Max Input Low

Temperature (C)

6

IXDN404 / IXDI404 / IXDF404

)

Fig. 11

100

90

80

70

60

50

40

30

Supply Current (mA)

20

10

Supply Current vs. Load Capacitance

Vcc = 8V

0

100 1000 10000

2 MHz

1 MHz

500 kHz

100 kHz

50 kHz

10 kHz

Fig. 12

1000

100

10

1

Supply Current (ma

0.1

0.01

Load Capacitance (pF)

Fig. 13

Supply Current (mA)

Supply Current vs. Load Capacitance

Vcc = 12V

100

90

80

70

60

50

40

30

20

10

0

100 1000 10000

2 MHz

1 Mhz

500 kHz

100 kHz

50 kHz

10 kHz

Fig. 14

1000

100

10

1

Supply Current (ma

0.1

0.01

Load Capacitance (pF)

Fig. 15

Supply Current (mA)

Supply Current vs. Load Capacitance

Vcc = 18V

100

90

80

70

60

50

40

30

20

10

0

100 1000 10000

2 MHz

1 MHz

500 kHz

100 kHz

50 kHz

10 kHz

Fig. 16

1000

100

10

1

Supply Current (ma)

0.1

0.01

Load Capacitance (pF)

Supply Current vs. Frequency

Vcc = 8V

10000 pF

1 10 100 1000 10000

Frequency (kHz)

Supply Current vs. Frequency

Vcc = 12V

1 10 100 1000 10000

Frequency ( kHz)

Supply Current vs. Frequency

Vcc = 18V

10000 pF

1000 pF

1 10 100 1000 10000

Frequency (kHz)

6800 pF 4700 pF 1800 pF

1000 pF

200 pF

10000 pF

6800 pF 4700 pF

1800 pF 1000 pF

200 pF

6800 pF 4700 pF

1800 pF

200 pF

7

IXDN404 / IXDI404 / IXDF404

50

00

500

Fig. 17

100

Supply Current (mA)

90

80

70

60

50

40

30

20

10

Supply Current vs. Load Capacitance

Vcc = 35V

2 MHz

0

100 1000 10000

Load Capacitance (pF)

Fig. 19

70

60

50

40

30

20

Propagation Delay vs. Supply Voltage

C

= 1800pF Vin = 5V@1kHz

L

t

ONDLY

t

OFFDLY

Propagation Delay (ns)

10

kHz

Fig. 18

Supply Current vs. Frequency

Vcc = 35V

1000

100

10

1

kHz

1

Supply Current (mA)

0.1

0.01 1 10 100 1000 10000

10000 pF

6800 pF 4700 pF

1800 pF

1000 pF

200 pF

Frequency (kHz)

Fig. 20

Propagation Delay vs. Input Voltage

C

= 1800pF Vcc = 15V

50

45

40

35

30

L

t

ONDLY

t

OFFDLY

Propagation Delay (ns)

25

0

5 10152025 3035

Suppl y Voltage (V)

Fig. 21

Propagation Delay Times vs. Temperature

C

= 1000pF, Vcc = 18V

60

55

50

45

40

Time (ns)

35

30

25

20

-60 -10 40 90 140 190

L

t

ONDLY

t

OFFDLY

Temperature (C)

20

24681012

Input Voltage (V)

Fig. 22

Quiescent Supply Current vs. Temperature

= 18V, Vin = 5V@1kHz, CL = 1000pF

V

cc

0.3

0.25

0.2

0.15

input Current (mA)

cc

0.1

0.05

Quiescent V

0

-60 -10 40 90 140 190

Temperature (C)

8

IXDN404 / IXDI404 / IXDF404

)

Fig. 23

High State Ouput Resistance vs. Supply Voltage

6

5

4

3

2

1

High State Output Resistance (Ohms

0

5 101520253035

Fig. 24

Low State Output Resistance (Ohms

Supply Voltage (V)

Fig. 25 Fig. 26

0

-2

Vcc vs. P Channel Output Current

12

10

Low State Output Resistance vs. Supply Voltage

6

5

4

3

2

1

0

5 101520253035

Supply Voltage (V)

Vcc vs. N Channel Ouput Current

-4

-6

-8

-10

P Channel Output Current (A)

-12 5 101520253035

Vcc (V)

Fig. 27 Fig. 28

P Channel Output Current vs. Temperature

V

= 18V, CL = 1000pF

6

5

4

3

2

cc

8

6

4

2

N Channel Output Current (A)

0

5 101520253035

Vcc (V)

N Channel Output Current vs. Temperature

= 18V CL = 1000pF

V

6

5

4

3

2

cc

1

P Channel Output Current (A)

0

-80 -30 20 70 120 170

Temperature (C)

1

N Channel Output Current (A)

0

-80 -30 20 70 120 170

Temperature (C)

9

PIN CONFIGURATIONS

4

IXDN404 / IXDI404 / IXDF404

1

NC

2

IN A

3

GND

4

INB

8 Lead PDIP (PI) 8 Pin SOIC (SI) IXDN404

NC

1

2

IN A

NC

3

GND

4

5

GND

NC

6

IN B

7

NC

8

16 Pin SOIC IXDN404SI-16

NC

OUT A

V

OUT B

NC

OUT A

VCC

OUT B

NC

8

7

6

S

5

16

15

14

13

12

11

10

9

1

NC

2

IN A

3

GND

4

INB

8 Lead PDIP (PI) 8 Pin SOIC (SI) IXDI404

NC

1

2

IN A

NC

3

GND

4

5

GND

NC

6

IN B

7

NC

8

16 Pin SOIC IXDI404SI-16

NC

OUT A

OUT B

NC

OUT A

VCC

OUT B

NC

8

7

V

6

S

5

16

15

14

13

12

11

10

9

Supply Bypassing, Grounding Practices And Output Lead inductance

When designing a circuit to drive a high speed MOSFET utilizing the IXDN404/IXDI404/IXDF404, it is very important to observe certain design criteria in order to optimize performance of the driver. Particular attention needs to be paid to Supply

Bypassing, Grounding, and minimizing the Output Lead Inductance.

Say, for example, the IXDN404 is being used to charge a 2500pF capacitive load from 0 to 25 volts in 25ns.

Using the formula: I= ∆V C / ∆t, where ∆V=25V C=2500pF & ∆t=25ns, one can determine that to charge 2500pF to 25 volts in 25ns will take a constant current of 2.5A. (In reality, the charging current won’t be constant and will peak somewhere around 4A).

SUPPLY BYPASSING

In order for the design to turn the load on properly, the IXDN404 must be able to draw this 2.5A of current from the power supply in the 25ns. This means that there must be very low impedance between the driver and the power supply. The most common method of achieving this low impedance is to bypass the power supply at the driver with a capacitance value that is a magnitude larger than the load capacitance. Usually, this would be achieved by placing two different types of bypassing capacitors, with complementary impedance curves, very close to the driver itself. (These capacitors should be carefully selected, low inductance, low resistance, high-pulse current-service capacitors). Lead lengths may radiate at high frequency due to inductance, so care should be taken to keep the lengths of the leads between these bypass capacitors and the IXDN404 to an absolute minimum.

GROUNDING

In order for the design to turn the load off properly, the IXDN404 must be able to drain this 2.5A of current into an adequate grounding system. There are three paths for returning current that need to be considered: Path #1 is between the IXDN404 and its load. Path #2 is between the IXDN404 and its power supply. Path #3 is between the IXDN404 and whatever logic is driving it. All three of these paths should be as low in resistance and inductance as possible, and thus as short as practical. In addition, every effort should be made to keep these three ground paths distinctly separate. Otherwise, the returning ground current from the load may develop a voltage that would have a detrimental effect on the logic line driving the IXDN404.

OUTPUT LEAD INDUCTANCE

Of equal importance to Supply Bypassing and Grounding are issues related to the Output Lead Inductance. Every effort should be made to keep the leads between the driver and its load as short and wide as possible. If the driver must be placed farther than 2” (5mm) from the load, then the output leads should be treated as transmission lines. In this case, a twistedpair should be considered, and the return line of each twisted pair should be placed as close as possible to the ground pin

of the driver, and connected directly to the ground terminal of the load.

1

NC

IN A

2

3

4

8 Lead PDIP (PI) 8 Pin SOIC (SI) IXDF40

1

2

3

4

5

6

7

8

OUT A

GND

INB

OUT B

NC

OUT A

IN A

NC

OUT A

GND

NC

OUT B

IN B

OUT B

NC

16 Pin SOIC IXDF404SI-16

NC

V

NC

VCC

NC

8

7

6

S

5

16

15

14

13

12

11

10

9

10

Dimenional Outline: IXDD404PI

Dimenional Outlines: IXDD404SI-CT and IXDD404SIA

IXDN404 / IXDI404 / IXDF404

Dimenional Outlines: IXDD404SI-16CT and IXDD404SIA-16

11

IXYS Corporation 3540 Bassett St; Santa Clara, CA 95054 Tel: 408-982-0700; Fax: 408-496-0670 e-mail: [email protected]

IXYS Semiconductor GmbH Edisonstrasse15 ; D-68623; Lampertheim Tel: +49-6206-503-0; Fax: +49-6206-503627 e-mail: [email protected]