Page 1
Preliminary Technical Information
High Voltage, High Gain
TM
BIMOSFET
Monolithic
IXBR42N170
Bipolar MOS Transistor
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA V
(RBSOA) Clamped inductive load V
P
C
T
J
T
JM
T
stg
T
L
T
SOLD
F
C
V
ISOL
Weight 5 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BV
CES
V
GE(th)
TC = 25°C to 150°C 1700 V
TJ = 25°C to 150°C, RGE = 1MΩ 1700 V
Continuous ± 20 V
Transient ± 30 V
TC = 25°C 57 A
TC = 90°C 32 A
TC = 25°C, 1ms 300 A
= 15V, TVJ = 125°C, RG = 10Ω ICM = 100 A
GE
≤ 1350 V
CES
TC = 25°C 200 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
1.6mm (0.062 in.) from case for 10s 300 °C
Plastic body for 10 seconds 260 °C
Mounting force 20..120 / 4.5..27 Nm/lb.in.
50/60 Hz, RMS t = 1min 2500 V~
I
≤ 1mA t = 1s 3000 V~
ISOL
IC = 250μA, VGE = 0V 1700 V
IC = 250μA, VCE = V
2.5 5.5 V
GE
V
CES
I
C90
V
CE(sat)
ISOPLUS247
= 1700V
= 32A
≤≤
≤ 2.9V
≤≤
TM
E153432
G
C
E
Isolated Tab
G = Gate E = Emitter
C = Collector
Features
z
Silicon chip on Direct-Copper Bond
(DCB) substrate
z
Isolated mounting surface
z
2500V electrical isolation
Advantages
z
Low gate drive requirement
z
High power density
Applications:
z
Switched-mode and resonant-mode
power supplies
z
Uninterruptible power supplies (UPS)
z
Laser generator
z
Capacitor discharge circuit
z
AC switches
I
I
V
CES
GES
CE(sat)
VCE = 0.8 • V
VGE = 0V TJ = 125°C 1.5 mA
V
= 0V, VGE = ± 20V ±100 nA
CE
CES
50 μA
IC = 42A, VGE = 15V, Note 1 2.9 V
TJ = 125°C 2.7 V
© 2008 IXYS CORPORATION, All rights reserved
DS100043(10/08)
Page 2
IXBR42N170
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
g
C
C
C
Q
Q
Q
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
R
R
fS
ies
oes
res
g
ge
gc
thJC
thCS
IC = 42A, VCE = 10V, Note 1 24 32 S
3990 p F
VCE = 25V, VGE = 0V, f = 1MHz 225 pF
70 p F
188 nC
IC = 42A, VGE = 15V, VCE = 0.5 • V
29 nC
CES
76 nC
37 ns
Resistive Switching times, TJ = 25°C
139 ns
I
= 42A, VGE = 15V
C
340 ns
VCE = 850V, RG = 10Ω
665 ns
36 ns
Resistive Switching times, TJ = 125°C
188 ns
I
= 42A, VGE = 15V
330 ns
C
VCE = 850V, RG = 10Ω
740 ns
0.62 °C/W
0.15 °C/W
ISOPLUS247 (IXBR) Outline
Reverse Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
V
F
t
rr
I
RM
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IF = 42A, VGE = 0V 2.8 V
= 21A, VGE = 0V, -diF/dt = 100A/μs
I
F
V
R
= 100V
1.32 μs
36 A
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Page 3
IXBR42N170
Fig. 1. Output Characteristics
@ 25ºC
90
80
70
60
50
40
- Amperes
C
I
30
20
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3. 5 4.0
V
GE
13V
11V
VCE - Volts
= 15V
9V
7V
5V
Fig. 3. Output Characteristics
@ 125ºC
90
80
70
60
50
40
- Amperes
C
I
30
20
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4. 0
VCE - Volts
V
= 15V
GE
13V
11V
Fig. 2. Extended Output Characteristics
@ 25ºC
300
270
240
210
180
150
Amper es
-
120
C
I
90
60
30
V
= 15V
GE
13V
11V
9V
7V
0
0 2 4 6 8 101214161820
VCE - Volts
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
1.7
V
1.6
1.5
1.4
9V
7V
5V
1.3
1.2
1.1
- Normalized
1.0
CE(sat )
V
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
GE
= 15V
I C = 84A
I C = 42A
I C = 21A
TJ - Degrees C entigr ade
Fig. 5. C o l lector-to-Emitter Vo l tage
vs. Gate-to-Emitter Voltag e
5.5
5.0
4.5
4.0
I
= 84A
3.5
- Volts
CE
V
3.0
2.5
2.0
1.5
5 6 7 8 9 1011 12131415
21A
C
42A
VGE - Volts
© 2008 IXYS CORPORATION, All rights reserved
TJ = 25ºC
Fig. 6. Input Admittance
160
140
120
100
80
Amper es
-
C
I
60
40
20
0
4.0 4. 5 5.0 5.5 6.0 6. 5 7.0 7.5 8.0 8. 5 9.0 9.5
VGE - Volts
TJ = - 40ºC
25ºC
125ºC
IXYS REF: B_42N170(7N)10-07-08
Page 4
IXBR42N170
Fig. 7. Transcond uctance
55
50
45
40
35
30
Siemens
25
-
f s
20
g
15
10
5
0
0 20 40 60 80 100 120 140 160
IC - Amperes
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Gate Charge
16
V
= 850V
14
12
10
- Volts
8
GE
V
6
4
2
0
CE
I
= 42A
C
I
= 10mA
G
0 20 40 60 80 100 120 140 160 180 200
QG - NanoCoulombs
Fig. 11 . Reverse-Bi as Saf e Operating Ar ea
110
100
90
80
70
60
50
- Amperes
C
I
40
30
20
10
T
= 125ºC
J
R
= 10Ω
G
dV / dt < 10V / ns
0
200 400 600 800 1000 1200 1400 1600 1800
VCE - Volts
IXYS reserves the right to change limits, test conditions and dimensions.
Fig. 8. Forward Voltage Drop of
Intrinsic Diode
120
110
100
90
80
70
60
50
- Amperes
F
I
40
30
20
10
0
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2
TJ = 25ºC
T
VF - Volts
Fig. 10. Capacitance
10,000
C
ies
1,000
C
oes
100
Capacitance - PicoFarads
= 1 MHz
f
10
0 5 10 15 20 25 30 35 40
C
res
VCE - Volts
Fig. 12 . Maximum Tr an sient T h er mal
Impedance
1.00
- ºC / W
0.10
(th)JC
Z
0.01
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Se conds
= 125ºC
J
Page 5
IXBR42N170
Fig. 13. R esi sti ve Turn-on
Rise Tim e vs. Ju n cti o n Temperature
360
R
= 10Ω
G
= 15V
V
GE
= 850V
V
CE
80
25 35 45 55 65 75 85 95 105 115 125
I C = 84A
I C = 42A
- Nanoseconds
t
r
320
280
240
200
160
120
TJ - Degrees Centigrade
Fig. 15. Resistive T u r n -o n
Switching Times vs. Gate Resistance
800
t
700
600
500
400
- Nanoseconds
r
t
300
r
TJ = 125ºC, VGE = 15V
V
CE
t
d(on)
= 850V
I C = 84A
- - - -
160
140
120
100
80
60
Fig. 14. Resistive T u r n -o n
Rise Tim e vs. Drain Cu r r en t
360
R
= 10Ω
320
280
240
200
160
- Nanoseconds
r
120
t
80
40
G
= 15V
V
GE
= 850V
V
CE
0
20 25 30 35 40 45 50 55 60 65 70 75 80 85
TJ = 125ºC
TJ = 25ºC
IC - Amperes
Fig. 16. Resistive T u r n -o ff
Switching Times vs. Jun cti o n Temperatur e
900
t
f
800
RG = 10Ω, VGE = 15V
V
t
d(on)
CE
700
- Nanoseconds
600
- Nanoseconds
f
500
t
t
= 850V
d(off)
- - - -
I C = 42A
380
360
340
320
300
t
d(off)
- Nanoseconds
200
100
10 15 20 25 30 35 40 45 50 55
I C = 42A
RG - Ohms
Fig. 17. Resi sti ve Turn-o ff
Switching Times vs. Dr ai n Current
1300
1200
1100
1000
900
800
700
- Nanoseconds
f
t
600
500
400
300
20 25 30 35 40 45 50 55 60 65 70 75 80 85
TJ = 25ºC, 125ºC
t
f
RG = 10Ω, VGE = 15V
V
CE
IC - Amperes
t
= 850V
d(off)
- - - -
40
20
440
420
400
380
360
340
320
300
280
260
240
400
300
25 35 45 55 65 75 85 95 105 115 125
I C = 84A
280
260
TJ - Degrees Centigrade
Fig. 18. R esi sti ve Turn-off
Switching Times vs. Gate Resi stance
1200
1100
t
d(off )
- Nanoseconds
1000
- Nanoseconds
f
t
900
800
700
600
500
400
300
t
f
TJ = 125ºC, VGE = 15V
V
CE
10 15 20 25 30 35 40 45 50 55
t
d(off
= 850V
- - - -
)
I C = 42A
I C = 84A
RG - Ohms
1800
1600
1400
1200
1000
800
600
400
200
0
t
d(off)
- Nanoseconds
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: B_42N170(7N)10-07-08
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