Page 1
Preliminary Technical Information
BiMOSFETTM Monolithic
IXBN75N170
Bipolar MOS Transistor
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA V
(RBSOA) Clamped Inductive Load V
P
C
T
J
T
JM
T
stg
T
L
T
SOLD
V
ISOL
M
d
Terminal Connection Torque (M4) 1.3/11.5 Nm/lb.in.
Weight 30 g
T
= 25°C to 150°C 1700 V
J
TJ = 25°C to 150°C, RGE = 1MΩ 1700 V
Continuous ±20 V
Transient ±30 V
TC= 25°C 145 A
TC= 90°C 75 A
TC= 25°C, 1ms 680 A
= 15V, TVJ = 125°C, RG = 1Ω ICM = 150 A
GE
< 0.8 • V
CE
CES
TC= 25°C 625 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
Maximum Lead Temperature for Soldering 300 °C
1.6 mm (0.062 in.) from Case for 10 260 °C
50/60Hz t = 1min 2500 V~
I
≤ 1mA t = 1s 3000 V~
ISOL
Mounting Torque 1.5/13 Nm/lb.in.
V
CES
I
C90
V
CE(sat)
= 1700V
= 75A
≤≤
≤ 3.1V
≤≤
SOT-227B, miniBLOC
E153432
E c
G
E c
C
G = Gate, C = Collector, E = Emitter
c either emitter terminal can be used as
Main or Kelvin Emitter
Features
z
International Standard Package
z
High Blocking Voltage
z
Isolation Voltage 3000 V~
z
High Current Handling Capability
z
Anti-Parallel Diode
Advantages
z
High Power Density
z
Low Gate Drive Requirement
z
Easy to Mount with 2 Screws
z
Intergrated Diode Can Be Used for
Protection
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BV
V
I
CES
CES
GE(th)
IC= 250μA, V
= 0V 1700 V
GE
IC= 1.5mA, VCE = V
VCE= 0.8 • V
, VGE = 0V 25 μA
CES
2.5 5.5 V
GE
TJ = 125°C 2 mA
I
V
GES
CE(sat)
VCE= 0V, VGE = ± 20V ±100 nA
IC= I
, VGE = 15V, Note 1 2.6 3.1 V
C90
TJ = 125°C 3.1 V
© 2009 IXYS CORPORATION, All Rights Reserved
Applications
z
Capacitor Discharge
z
AC Switches
z
Switch-Mode and Resonant-Mode
Power Supplies
z
UPS
z
AC Motor Drives
DS100168A(10/09)
Page 2
IXBN75N170
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
g
C
C
C
Q
Q
Q
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
R
R
fS
ies
oes
res
g
ge
gc
thJC
thCS
IC = I
, VCE = 10V, Note 1 34 56 S
C90
6930 pF
VCE = 25V, VGE = 0V, f = 1MHz 400 pF
150 pF
350 nC
IC = I
, VGE = 15V, VCE = 0.5 • V
C90
50 nC
CES
160 nC
Resistive load, TJ = 25°C
I
= I
, VGE = 15V
C
C90
R
= 1Ω, VCE = 0.5 • V
G
CES
Resistive load, TJ = 125°C
I
= I
, VGE = 15V
C
C90
R
= 1Ω, VCE = 0.5 • V
G
CES
46 ns
160 ns
260 ns
440 ns
47 ns
230 ns
260 ns
580 ns
0.20 °C/W
0.05 °C/W
SOT-227B miniBLOC (IXBN)
Reverse Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max
V
F
t
rr
I
RM
Q
RM
IF = I
, VGE = 0V, Note 1 3.0 V
C90
IF = 37V, VGE = 0V, -diF/dt = 100A/μs
V
= 100V, VGE = 0V
R
1.5 μs
38.2 μC
50 A
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Page 3
IXBN75N170
Fig. 1 . Ou tp u t C haracteristi cs
@ 25ºC
160
140
120
100
80
- Amperes
C
I
60
40
20
0
0.0 0.5 1.0 1.5 2. 0 2.5 3.0 3.5 4.0 4.5
V
GE
19V
15V
13V
11V
VCE - Volts
= 25V
9V
7V
Fig. 3 . Ou tp u t C haracteristi cs
@ 125ºC
160
140
120
100
80
- Amperes
C
I
60
40
20
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VCE - Volts
V
= 25V
GE
19V
15V
13V
11V
9V
7V
5V
Fig. 2. Exten ded Outpu t Characteri st i cs
@ 25ºC
320
V
= 25V
GE
17V
280
15V
13V
240
200
160
Amperes
-
C
120
I
80
40
0
0 2 4 6 8 10 12 14 16 18
11V
9V
7V
VCE - Volts
Fig. 4. D ependence o f V
CE(sat)
on
Junction Temperature
1.7
V
= 15V
GE
1.6
1.5
1.4
1.3
1.2
- Normalized
1.1
CE(sat)
1.0
V
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
I C = 150A
I C = 75A
I C = 37.5A
TJ - Degrees Ce ntigr ade
Fig. 5. C o l l ect o r -to -Emitte r Vo l tag e
vs. Gate-to-Emitter Vo l tag e
5.5
5.0
4.5
4.0
3.5
- Volts
CE
V
3.0
2.5
2.0
1.5
5 7 9 11 13 15 17 19 21 23 25
I
37.5A
C
75A
= 150A
VGE - Volts
© 2009 IXYS CORPORATION, All Rights Reserved
TJ = 25ºC
Fig. 6. Input Admittance
200
180
160
140
120
100
Amperes
-
C
80
I
60
40
20
0
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
TJ = 125ºC
25ºC
- 40ºC
VGE - Volts
IXYS REF: B_75N170(8T)7-01-09
Page 4
IXBN75N170
Fig. 7. Transconductance
90
80
70
60
50
Siemens
40
-
f s
g
30
20
10
0
0 20 40 60 80 100 120 140 160 180 200 220
IC - Amperes
T
125ºC
25ºC
Fig. 9. Gat e C harge
16
V
= 850V
CE
14
I
= 75A
C
I
= 10mA
G
12
= - 40ºC
J
Fig. 8. Forward Voltage Drop of
Intrinsic Diode
300
250
TJ = 25ºC
200
150
- Amperes
F
I
100
50
0
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VF - Volts
Fig. 10. Capacitance
100,000
= 1 MHz
f
10,000
C
T
J
ies
= 125ºC
10
- Volts
8
GE
V
6
4
2
0
0 40 80 120 160 200 240 280 320 360
QG - Na noC oulombs
Fig. 11. Reverse-Bi as S afe Op erating Area
160
140
120
100
80
- Amperes
C
I
60
40
T
= 125ºC
J
R
= 1Ω
G
20
dV / dt < 10V / ns
0
200 400 600 800 1000 1200 1400 1600 1800
VCE - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1,000
100
Capacitance - PicoFarads
10
0 5 10 15 20 25 30 35 40
C
oes
C
res
VCE - Volts
Fig. 12. Maximum Tr an si ent Thermal I mped an ce
1.000
0.100
- ºC / W
(th)JC
Z
0.010
0.001
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Se co nds
Page 5
IXBN75N170
(
)
(
)
(
)
(
)
Fig. 13. Resistive Turn -on
Rise Time vs. Ju n cti o n Temp er atu r e
400
R
= 1Ω , VGE = 15V
360
320
280
240
- Nanoseconds
r
t
200
160
120
G
V
= 850V
CE
I C = 150A
I C = 75A
25 35 45 55 65 75 85 95 105 115 125
TJ - De grees C entigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
800
t
700
600
500
r
TJ = 125ºC, VGE = 15V
V
= 850V
CE
t
d(on)
- - - -
I C = 150A
Fig. 14. Resisti ve Turn -on
Rise Time vs. Collector Current
450
R
= 1Ω , VGE = 15V
G
400
V
= 850V
CE
350
300
250
200
- Nanoseconds
r
150
t
100
50
0
30 40 50 60 70 80 90 100 110 120 130 140 150
TJ = 125ºC
TJ = 25ºC
IC - Amperes
Fig. 16. R e si sti v e Turn-off
Switching T i mes vs. Ju n ct i o n Temperat ure
80
75
t
70
d
on
- Nanoseconds
65
800
700
600
500
t
f
RG = 1Ω, VGE = 15V
V
CE
= 850V
t
d(off)
- - - -
I C = 75A
320
300
280
260
t
d
off
- Nanoseconds
400
- Nanoseconds
r
t
300
200
100
12345678910
I C = 75A
RG - Ohms
Fig. 17. Resistive Turn-off
Switching T i mes vs. C o l l e cto r C u r r ent
1000
t
900
800
700
600
500
- Nanoseconds
f
t
400
300
200
100
30 40 50 60 70 80 90 100 110 120 130 140 150
f
RG = 1Ω, VGE = 15V
V
= 850V
CE
TJ = 125ºC, 25ºC
IC - Amperes
t
d(off)
- - - -
60
55
50
45
340
320
300
280
260
240
220
200
180
160
t
d
off
- Nanoseconds
400
- Nanoseconds
f
t
300
200
100
25 35 45 55 65 75 85 95 105 115 125
I C = 150A
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switchi n g Times vs. Ga te R esistance
900
800
700
600
500
400
- Nanoseconds
300
f i
t
200
100
f
TJ = 125ºC, VGE = 15V
V
= 850V
CE
0
1234567 8910
t
t
)
d(off
I C = 75A
- - - -
I C = 150A
RG - Ohms
240
220
200
180
520
480
440
400
360
320
280
240
200
160
t
d
off
- Nanoseconds
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: B_75N170(8T)7-01-09
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