Datasheet ITA6V1U1 Datasheet (SGS Thomson Microelectronics)

Page 1
®
ITA6V1U1
Application Specific Discretes
A.S.D.
APPLICATIONS
Data transmission lines protection :
- Unipolar signal up to 5.5V
- Bipolar signal in the +/- 2.5V range
FEATURES
HIGH SURGE CAPABILITY TRANSIL ARRAY
= 40 A (8/20µs)
I
PP
PEAK PULSE POWER : 300 W (8/20µs)
UP TO 6 UNIDIRECTIONAL TRANSIL FUNC-
TIONS LOW CLAMPING FACTOR (VCL/VBR)AT
HIGH CURRENT LEVEL
LOW LEAKAGE CURRENT
ESD PROTECTION UP TO 15kV
TM
TRANSIL
TM
ARRAY
FOR DATALINE PROTECTION
FUNCTIONAL DIAGRAM
DESCRIPTION
Transil diode arrays provide high overvoltage protectionbyclampingaction.Theirinstantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied IC’s.
The ITA series allies high surge capability against energetic pulses with high voltage performance against ESD.
COMPLIES WITH THE FOLLOWING STANDARDS :
IEC 1000-4-2 : level 4 IEC 1000-4-4 : level 4 IEC 1000-4-5 : level 2
MIL STD 883C - Method 3015-6 : class 3 (human body model)
I/O
I/O I/O3
I/O 4
I/O
1
1
2
2 3 4
8 7 6 5
6
GND GND
I/O 5
August 2001- Ed: 2
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ITA6V1U1
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25°C)
Symbol Parameter Value Unit
P
PP
Peak pulse power dissipation (8/20µs)
Tj initial = T
amb
300 W
(see note 1)
I
PP
2
I
t
T
stg
T
j
T
L
Note 1 : For surges greater than the specified maximum value, the I/O will first present a short-circuit and after an open circuit caused by the wire melting.
Peak pulse current (8/20µs) (see note 1) Tj initial = T
2
Wire I
t value (see note 1)
Storage temperature range Maximum operating junction temperature
Maximum lead temperature for soldering during 10s
%I
pp
100
50
0
amb
-55to+150
8s
Pulse wave form 8/20 s
20 s
40 A
0.6 A
125 260 °C
t
°C °C
2
s
ELECTRICAL CHARACTERISTICS (T
amb
= 25°C)
Symbol Parameter
V
RM
V
BR
V
CL
I
RM
I
PP
αT
C
V
F
Types IRM@VRMVBR@IRVCL@IPPVCL@IPPαTCV
ITA6V1U1
Note 2 : Between I/O pin and ground. Note 3 : Between I/O pin and ground, at 0V Bias. F = 1MHz.
Stand-off voltage Breakdown voltage
Clamping voltage Leakage current @ V
RM
VCLV
BR
V
Peak pulse current Voltage temperature coefficient Junction capacitance Forward voltage drop
max. min. max. 8/20µsmax. 8/20µsmax. max. max.
note 2 note 2 note 2 note 3
µAVVmAVAVA10
10 5 6.1 1 10 10 12 25 4 1500 1.3 1
I
I
F
V
I
I
F
RM
PP
RM
-4
/°C pF V A
@I
F
F
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Page 3
ITA6V1U1
Fig. 1 : Typical peak pulse power versus
exponential pulse duration.
Ppp(W)
1000
Tinitial=25C
j
100
10
1E-3 1E-2 1E-1 1E+0 1E+1
tp (ms) expo
o
Fig. 3 : Peak current IDCinducing open circuit of
the wire for one input/output versus pulse duration (typical values).
I(A)
1E+03
DC
exponential wa veform
Fig. 2 : Clamping voltage versus peak pulse current (exponential waveform 8/20 µs).
Fig. 4 : Junction capacitance versus reverse applied voltage for one input/output (typical values).
1E+02
1E+01
1E+00
1E-02 1E-01 1E+00 1E+01
t(ms)
Fig. 5 : Relative variation of leakage current versus junction temperature
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Page 4
ITA6V1U1
APPLICATION INFORMATION Typical application 1 : µP I/O lines
Typical application 2 : +/-2.5V Data lines
ORDER CODE
Integrated Transil Array
4/5
V min
BR
ITA 6V1 U 1 RL
Packaging: RL = Tape & reel
= Tube
Package: SO-8 Plastic
Unidirectional
Page 5
MARKING
TYPE MARKING
ITA6V1U1 6V1U1
PACKAGE MECHANICAL DATA
SO-8 (Plastic)
ITA6V1U1
Packaging: Preferred packagingis tape andreel. Weight : 0.08g.
DIMENSIONS
REF.
A 1.75 0.069 a1 0.1 0.25 0.004 0.010 a2 1.65 0.065
b 0.35 0.48 0.014 0.019 b1 0.19 0.25 0.007 0.010
C 0.50 0.020 c1 45° (typ)
D 4.8 5.0 0.189 0.197
E 5.8 6.2 0.228 0.244
e 1.27 0.050 e3 3.81 0.150
F 3.8 4.0 0.15 0.157
L 0.4 1.27 0.016 0.050
M 0.6 0.024
S 8° (max)
Millimetres Inches
Min. Typ. Max. Min. Typ. Max.
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© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
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