Transil diode arraysprovide high overvoltage
protectionbyclampingaction.Theirinstantaneous
response to transient overvoltages makes them
particularly suited to protect voltage sensitive
devices such as MOS Technology and low voltage
supplied IC’s.
The ITA series allies high surge capability against
energetic pulses with high voltage performance
against ESD.
MIL STD 883C - Method 3015-6 : class 3
(human body model)
I/O
I/O
I/O3
I/O 4
I/O
1
1
2
2
3
4
8
7
6
5
6
GND
GND
I/O 5
August 2001- Ed: 2
1/5
Page 2
ITA6V1U1
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25°C)
SymbolParameterValueUnit
P
PP
Peak pulse power dissipation (8/20µs)
Tj initial = T
amb
300W
(see note 1)
I
PP
2
I
t
T
stg
T
j
T
L
Note 1 : For surges greater than the specified maximum
value, the I/O will first present a short-circuit and after an
open circuit caused by the wire melting.
Peak pulse current (8/20µs) (see note 1)Tj initial = T
2
Wire I
t value (see note 1)
Storage temperature range
Maximum operating junction temperature
Maximum lead temperature for soldering during 10s
%I
pp
100
50
0
amb
-55to+150
8s
Pulse wave form 8/20 s
20 s
40A
0.6A
125
260°C
t
°C
°C
2
s
ELECTRICAL CHARACTERISTICS (T
amb
= 25°C)
SymbolParameter
V
RM
V
BR
V
CL
I
RM
I
PP
αT
C
V
F
TypesIRM@VRMVBR@IRVCL@IPPVCL@IPPαTCV
ITA6V1U1
Note 2 : Between I/O pin and ground.
Note 3 : Between I/O pin and ground, at 0V Bias. F = 1MHz.
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current @ V
RM
VCLV
BR
V
Peak pulse current
Voltage temperature coefficient
Junction capacitance
Forward voltage drop
max.min.max.8/20µsmax.8/20µsmax.max.max.
note 2note 2note 2note 3
µAVVmAVAVA10
1056.1110101225415001.31
I
I
F
V
I
I
F
RM
PP
RM
-4
/°CpFVA
@I
F
F
2/5
Page 3
ITA6V1U1
Fig. 1 : Typical peak pulse power versus
exponential pulse duration.
Ppp(W)
1000
Tinitial=25C
j
100
10
1E-31E-21E-11E+01E+1
tp (ms) expo
o
Fig. 3 : Peak current IDCinducing open circuit of
the wire for one input/output versus pulse duration
(typical values).
I(A)
1E+03
DC
exponential wa veform
Fig.2 : Clamping voltage versus peak pulse
current (exponential waveform 8/20 µs).
Fig. 4 : Junction capacitance versus reverse
applied voltage for one input/output (typical
values).
1E+02
1E+01
1E+00
1E-021E-011E+001E+01
t(ms)
Fig. 5 : Relative variation of leakage current
versus junction temperature
3/5
Page 4
ITA6V1U1
APPLICATION INFORMATION
Typical application 1 : µP I/O lines
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