Datasheet ISL9V3040S3S, ISL9V3040P3, ISL9V3040D3S Datasheet (Fairchild Semiconductor)

ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 /
ISL9V3040S3

EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT

General Description

The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and
ISL9V3040S3 are the next generation ignition IGBTs that offer
outstanding SCIS capability in the space saving D-Pak (TO-252), as
well as the industry standard D²-Pak (TO-263), and TO-262 and TO­220 plastic packages. This device is intended for use in automotive
ignition circuits, spe cifically a s a coil d rive r. Internal diode s provide
voltage clamping without the need for external components.

EcoSPARK™ devices can be custom made to specific clamp
voltages. Contact your nearest Fairchild sales office for more
information.

Formerly Developmental Type 49362

Applications

• Automotive Ignition Coil Driver Circuits

• Coil- On Plug Applications

Features

• Space saving D-Pak package availability

• SCIS Energy = 300mJ at T

• Logic Level Gate Drive

= 25oC

J

ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3

April 2003

Package

JEDEC TO-263AB

D²-Pak

G

E

JEDEC TO-252AA

D-Pak

G

E

COLLECTOR

(FLANGE)

JEDEC TO-220AB

JEDEC TO-262AA

Device Maximum Ratings T

E

C

E

C

G

= 25°C unless otherwise noted

A

G

Symbol

GATE

COLLECTOR

R

1

R

2

EMITTER

Symbol Parameter Ratings Units

BV
BV

E

SCIS25

E

SCIS150

I

C25

I

C110

V

GEM

P

T

T

STG

T

T

CER
ECS

pkg

Collector to Emitter Breakdown Voltage (IC = 1 mA) 430 V
Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA) 24 V
At Starting TJ = 25°C, I
At Starting TJ = 150°C, I

= 14.2A, L = 3.0 mHy 300 mJ

SCIS

= 10.6A, L = 3.0 mHy 170 mJ

SCIS

Collector Current Continuous, At TC = 25°C, See Fig 9 21 A
Collector Current Continuous, At TC = 110°C, See Fig 9 17 A
Gate to Emitter Voltage Continuous ±10 V
Power Dissipation Total TC = 25°C 150 W

D

Power Dissipation Derating T
Operating Junction Temperature Range -40 to 175 °C

J

> 25°C 1.0 W/°C

C

Storage Junction Temperature Range -40 to 175 °C
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) 300 °C

L

Max Lead T emp for Soldering (Package Body for 10s) 260 °C

ESD Electrostatic Discharge Voltage at 100pF, 1500Ω 4kV

©2003 Fairchild Semiconductor Corporation

ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003

Package Marking and Ordering Information

Device Marking Device Package Tape Width Quantity

V3040D ISL9V3040D3S TO-252AA 16mm 2500
V3040S ISL9V3040S3S TO-263AB 24mm 800
V3040P ISL9V3040P3 TO-220AA - ­V3040S ISL9V3040S3 TO-262AA - -

ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off State Characteristics

BV

BV

BV

BV

I

CER

I

ECS

R
R

Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0,

CER

Collector to Emitter Breakdown Voltage IC = 10mA, VGE = 0,

CES

Emitter to Collector Breakdown Voltage IC = -75mA, VGE = 0V,

ECS

Gate to Emitter Breakdown Voltage I

GES

Collector to Emitter Leakage Current V

Emitter to Collector Leakage Current VEC = 24V , See

Series Gate Resistance - 70 - Ω

1

Gate to Emitter Resistance 10K - 26K Ω

2

R

= 1KΩ, See Fig. 15

G

T

= -40 to 150°C

J

= 0, See Fig. 15

R

G

T

= -40 to 150°C

J

= 25°C

T

C

= ± 2mA ±12 ±14 - V

GES

= 250V,

CER

= 1KΩ, See

R

G

Fig. 11

T

= 25°C - - 25 µA

C

T

= 150°C - - 1 mA

C

TC = 25°C - - 1 mA

Fig. 11

T

= 150°C - - 40 mA

C

370 400 430 V

390 420 450 V

30 - - V

On State Characteristics

V

CE(SAT)

V

CE(SAT)

V

CE(SAT)

Collector to Emitter Saturation Voltage IC = 6A,

= 4V

V

GE

Collector to Emitter Saturation Voltage IC = 10A,

= 4.5V

V

GE

Collector to Emitter Saturation Voltage IC = 15A,

V

= 4.5V

GE

T

= 25°C,

C

- 1.25 1.60 V

See Fig. 3
T

= 150°C,

C

See Fig. 4

= 150°C - 1.90 2.20 V

T

C

- 1.58 1.80 V

Dynamic Characteristics

Q

G(ON)

V

GE(TH)

V

GEP

Switching Characteristics

t

d(ON)R

t

t

d(OFF)L

Gate Charge IC = 10A, VCE = 12V,

Gate to Emitter Threshold Voltage IC = 1.0mA,

Gate to Emitter Plateau Voltage IC = 10A,

Current T urn-On Delay Time-Resistive V
Current Rise Time-Resistive - 2.1 7 µs

rR

Current T urn-Off Delay Time-Inductive V

t

Current Fall Time-Inductive - 2.8 15 µs

fL

SCIS Self Clamped Inductive Switching T

= 5V, See Fig. 14

V

GE

= V

V

CE

See Fig. 10

= 12V

V

CE

= 14V, RL = 1Ω,

CE

= 5V, RG = 1KΩ

V

GE

T

= 25°C, See Fig. 12

J

= 300V, L = 500µHy,

CE

= 5V, RG = 1KΩ

V

GE

T

= 25°C, See Fig. 12

J

= 25°C, L = 3.0 mHy,

J

= 1KΩ, VGE = 5V, See

R

G

Fig. 1 & 2

GE,

T

C

T

C

= 25°C 1.3 - 2.2 V
= 150°C 0.75 - 1.8 V

-17-nC

-3.0- V

-0.74µs

- 4.8 15 µs

- - 300 mJ

Thermal Characteristics

R

Thermal Resistance Junction-Case TO-252,TO-263,TO-220,TO-

θJC

262

--1.0°C/W

©2003 Fairchild Semiconductor Corporation ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003

Typical Performance Curves (Continued)

ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3

30

25

20

15

10

5

, INDUCTIVE SWITCHING CURRENT (A)

SCIS Curves valid for V

SCIS

I

0

TJ = 150°C

RG = 1kΩ, VGE = 5V,Vdd = 14V

Voltages of <430V

clamp

t

, TIME IN CLAMP (µS)

CLP

TJ = 25°C

20017515001255025 75 100

Figure 1. Self Clamped Inductive Switching

Current vs Time in Clamp

1.30

1.26

1.22

1.18

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

V

1.14

ICE = 6A

VGE = 8.0V

-75 25-25 17512575-50 0 50 100 150

TJ, JUNCTION TEMPERATURE (°C)

VGE = 3.7V

VGE = 4.0V

VGE = 4.5V

VGE = 5.0V

Figure 3. Collector to Emitter On-State Voltage vs

Junction Temperature

30

25

20

15

10

, INDUCTIVE SWITCHING CURRENT (A)

SCIS

I

TJ = 150°C

5

SCIS Curves valid for V

0

0102468

RG = 1kΩ, VGE = 5V,Vdd = 14V

Voltages of <430V

clamp

L, INDUCTANCE (mHy)

TJ = 25°C

Figure 2. Self Clamped Inductive Switching

Current vs Inductance

1.8
ICE = 10A

1.7

1.6

1.5

1.4

1.3

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

V

1.2

-75 25-25 17512575-50 0 50 100 150

VGE = 3.7V

VGE = 4.0V

VGE = 4.5V

VGE = 5.0V

VGE = 8.0V

TJ, JUNCTION TEMPERATURE (°C)

Figure 4. Collector to Emitter On-State Voltage

vs Junction Temperature

25

VGE = 8.0V
VGE = 5.0V

20

VGE = 4.5V
VGE = 4.0V
VGE = 3.7V

15

10

5

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

0

02.01.0 3.0 4.0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

TJ = - 40°C

Figure 5. Collector to Emitter On-State Voltage vs

Collector Current

©2003 Fairchild Semiconductor Corporation ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003

25

VGE = 8.0V
VGE = 5.0V

20

VGE = 4.5V
VGE = 4.0V
VGE = 3.7V

15

10

5

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

0

02.01.0 3.0 4.0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

TJ = 25°C

Figure 6. Collector to Emitter On-State Voltage

vs Collector Current

Typical Performance Curves (Continued)

ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3

25

VGE = 8.0V

VGE = 5.0V

20

VGE = 4.5V
VGE = 4.0V
VGE = 3.7V

15

10

5

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

0

02.01.0 3.0 4.0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

TJ = 175°C

Figure 7. Collector to Emitter On-State Voltage vs

Collector Current

25

VGE = 4.0V

20

15

10

, DC COLLECTOR CURRENT (A)

5

CE

I

25

DUTY CYCLE < 0.5%, VCE = 5V

PULSE DURATION = 250µs

20

15

10

5

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

0

TJ = 150°C

TJ = 25°C

2.01.0 3.0 4.0

2.51.5 3.5 4.5

VGE, GATE TO EMITTER VOLTAGE (V)

Figure 8. Transfer Characteristics

2.2

2.0

1.8

1.6

1.4

, THRESHOLD VOLTAGE (V)

TH

1.2

V

TJ = -40°C

VCE = VGE
ICE = 1mA

0

25 1751257550 100 150

TC, CASE TEMPERATURE (°C)

Figure 9. DC Collector Current vs Case

Temperature

LEAKAGE CURRENT (µA)

10000

1000

100

10

1

0.1

V

= 300V

CES

25-25 17512575-50 0 50 100 150

TJ, JUNCTION TEMPERATURE (°C)

V

= 24V

ECS

V

= 250V

CES

Figure 11. Leakage Current vs Junction

Temperature

©2003 Fairchild Semiconductor Corporation ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003

1.0

TJ JUNCTION TEMPERATURE (°C)

Figure 10. Threshold Voltage vs Junction

Temperature

12

ICE = 6.5A, VGE = 5V, RG = 1KΩ

Resisti ve t

10

8

6

SWITCHING TIME (µS)

4

2

25 1751257550 100 150

T

, JUNCTION TEMPERATURE (°C)

J

OFF

Inductive t

Resistive t

Figure 12. Switching Time vs Junction

Temperature

17550 100

1500-50 1257525-25

OFF

ON

Typical Performance Curves (Continued)

ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3

1600

1200

800

C, CAPACITANCE (pF)

400

0

0105152025

C

IES

C

RES

C

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

OES

FREQUENCY = 1 MHz

Figure 13. Capacitance vs Collector to Emitter

8

I

= 1mA, RL = 1.25Ω, TJ = 25°C

G(REF)

7

6

5

4

3

2

, GATE TO EMITTER VOLTAGE (V)

1

GE

V

0

V

= 12V

CE

VCE = 6V

0 4 8 1216202428

, GATE CHARGE (nC)

Q

G

Figure 14. Gate Charge

Voltage

430

I

= 10mA

CER

425

420

415

410

405

, BREAKDOWN VOLTAGE (V)

400

CER

BV

395

390

10 20001000 3000

TJ = 175°C

TJ = 25°C

100

TJ = - 40°C

32

RG, SERIES GATE RESISTANCE (kΩ)

Figure 15. Breakdown Voltage vs Series Gate Resistance

0

10

0.5

0.2

0.1

-1

10

10

, NORMALIZED THERMAL RESPONSE

thJC

Z

10

-2

-3

-6

10

0.05

0.02

0.01

SINGLE PULSE

DUTY FACTOR, D = t1 / t

PEAK TJ = (PD X Z

-5

10

-4

10

T1, RECTANGULAR PULSE DURATION (s)

-3

10

t

1

P

D

t

2

2

X R

θ

JC

-2

10

) + T

θ

JC

C

-1

10

Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case

©2003 Fairchild Semiconductor Corporation ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003

Test Circuit and Waveforms

ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3

L

C

R

G

PULSE

GEN

G

DUT

E

Figure 17. Inductive Switching Test Circuit

V

CE

L

VARY tP TO OBTAIN
REQUIRED PEAK I

V

GE

t

0V

P

R

AS

G

C

G

DUT

E

I

AS

0.01Ω

V

CE

R
or

LOAD

L

C

5V

RG = 1KΩ

G

DUT

+

V

CE

-

E

Figure 18. t

+

V

DD

-

0

ON

and t

I

AS

Switching Test Circuit

OFF

BV

CES

t

P

t

AV

V

CE

V

DD

Figure 19. Energy Test Circuit Figure 20. Energy Waveforms

©2003 Fairchild Semiconductor Corporation ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003

SPICE Thermal Model

REV 7 March 2002
ISL9V3040D3S / IS L9V3040S3S / ISL9V30 40P3 /

ISL9V3040S3
CTHERM1 th 6 2.1e -3

CTHERM2 6 5 1.4e -1
CTHERM3 5 4 7.3e -3
CTHERM4 4 3 2.1e -1
CTHERM5 3 2 1.1e -1
CTHERM6 2 tl 6.2e +6

RTHERM1 th 6 1.2e -1
RTHERM2 6 5 1.9e -1
RTHERM3 5 4 2.2e -1
RTHERM4 4 3 6.0e -2
RTHERM5 3 2 5.8e -2
RTHERM6 2 tl 1.6e -3

RTHERM1

RTHERM2

ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3

JUNCTION

th

CTHERM1

6

CTHERM2

SABER Thermal Model

SABER thermal model
ISL9V3040D3S / IS L9V3040S3S / ISL9V30 40P3 /
ISL9V3040S3
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 2.1e -3
ctherm.ctherm2 6 5 = 1.4e -1
ctherm.ctherm3 5 4 = 7.3e -3
ctherm.ctherm4 4 3 = 2.2e -1
ctherm.ctherm5 3 2 =1.1e -1
ctherm.ctherm6 2 t l = 6.2e +6

rtherm.rtherm1 th 6 = 1.2e -1
rtherm.rtherm2 6 5 = 1.9e -1
rtherm.rtherm3 5 4 = 2.2e -1
rtherm.rtherm4 4 3 = 6.0e -2
rtherm.rtherm5 3 2 = 5.8e -2
rtherm.rtherm6 2 tl = 1.6e -3
}

RTHERM3

RTHERM4

RTHERM5

RTHERM6

5

CTHERM3

4

CTHERM4

3

CTHERM5

2

CTHERM6

tl

CASE

©2003 Fairchild Semiconductor Corporation ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or
In Design

First Production

Full Production

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I2