Datasheet ISL9V2040S3S, ISL9V2040D3S, ISL9V2040P3 Datasheet (Fairchild Semiconductor)

ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3

EcoSPARKTM 200mJ, 400V, N-Channel Ignition IGBT

ISL9V2040D3S / ISL9V2040S3S / ISL9 V2040P3

April 2002

General Description

The ISL9V2040D3S, ISL9V2040S3S, and ISL9V2040P3 are the
next generation ignition IGBTs that offer outstanding SCIS
capability in the space saving D-Pak (TO-252), as well as the
industry standard D²-Pa k (TO-263) and TO-220 plast ic packages.
This device is intended for use in automotive ignition circuits,
specifically as a coil driver. Internal diodes provide voltage clamping
without the need for external components.

EcoSPARK™ devices can be custom made to specific clamp
voltages. Contact your nearest Fairchild sales office for more
information.

Formerly Developmental Type 49444

Package

JEDEC TO-252AA

D-Pak D²-Pak

G

E

COLLECTOR

(FLANGE)

JEDEC TO-263AB

G

E

COLLECTOR

(FLANGE)

Device Maximum Ratings T

JEDEC TO-220AB

= 25°C unless otherwise noted

A

Applications

• Automotive Ignition Coil Driver Circuits

• Coil- On Plug Applications

Features

• Space saving D - Pak package available

• SCIS Energy = 200mJ at T

• Logic Level Gate Drive

= 25oC

J

Symbol

E

C

G

GATE

R

1

R

2

COLLECTOR

EMITTER

Symbol Parameter Ratings Units

BV
BV

E

SCIS25

E

SCIS150

I

C25

I

C110

V

GEM

P

T

T

STG

T

T

CER
ECS

pkg

Collector to Emitter Breakdown Voltage (IC = 1 mA) 430 V
Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA) 24 V
At Starting TJ = 25°C, I
At Starting TJ = 150°C, I

= 11.5A, L = 3.0mHy 200 mJ

SCIS

= 8.9A, L = 3.0mHy 120 mJ

SCIS

Collector Current Continuous, At TC = 25°C, See Fig 9 10 A
Collector Current Continuous, At TC = 110°C, See Fig 9 10 A
Gate to Emitter Voltage Continuous ±10 V
Power Dissipation Total TC = 25°C 130 W

D

Power Dissipation Derating T
Operating Junction Temperature Range -40 to 175 °C

J

> 25°C 0.87 W/°C

C

Storage Junction Temperature Range -40 to 175 °C
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) 300 °C

L

Max Lead Temp for Soldering (Package Body for 10s) 260 °C

ESD Electrostatic Discharge Voltage at 100pF, 1500Ω 4kV

©2002 Fairchild Semiconductor Corporation

ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B2, April 2002

Package Marking and Ordering Information

Device Marking Device Package Tape Width Quantity

V2040D ISL9V2040D3S TO-252AA 16mm 2500

V2040S ISL9V2040S3S TO-263AB 24mm 800
V2040P ISL9V2040P3 TO-220AB - -

ISL9V2040D3S / ISL9V2040S3S / ISL9 V2040P3

Electrical Characteristics

TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off State Characteristics

BV

BV

BV

BV

I

CER

I

ECS

R
R

Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0,

CER

Collector to Emitter Breakdown Voltage IC = 10mA, VGE = 0,

CES

Emitter to Collector Breakdown Voltage IC = -75mA, VGE = 0V,

ECS

Gate to Emitter Breakdown Voltage I

GES

Collector to Emitter Leakage Current V

Emitter to Collector Leakage Current VEC = 24V , See

Series Gate Resistance - 70 - Ω

1

Gate to Emitter Resistance 10K - 26K Ω

2

= 1KΩ, See Fig. 15

R

G

T

= -40 to 150°C

J

= 0, See Fig. 15

R

G

= -40 to 150°C

T

J

T

= 25°C

C

= ± 2mA ±12 ±14 - V

GES

= 250V,

CER

= 1KΩ,

R

G

See Fig. 11

T

= 25°C- - 25 µA

C

= 150°C- - 1 mA

T

C

TC = 25°C- - 1 mA

Fig. 11

T

= 150°C- - 40 mA

C

370 400 430 V

390 420 450 V

30 - - V

On State Characteristics

V

CE(SAT)

V

CE(SAT)

Collector to Emitter Saturation Voltage IC = 6A,

= 4V

V

GE

Collector to Emitter Saturation Voltage IC = 10A,

= 4.5V

V

GE

T

= 25°C,

C

See Fig. 3
T

= 150°C

C

See Fig. 4

-1.451.9V

-1.952.3V

Dynamic Characteristics

Q

G(ON)

V

GE(TH)

V

GEP

Switching Characteristics

t

d(ON)R

t

riseR

t

d(OFF)L

Gate Charge IC = 10A, VCE = 12V,

Gate to Emitter Threshold Voltage IC = 1.0mA,

Gate to Emitter Plateau Voltage IC = 10A,

Current T urn-On Delay Time-Resistive V
Current Rise Time-Resistive - 2.17 - µs

Current T urn-Off Delay Time-Inductive V
Current Fall Time-Inductive - 2.36 - µs

t

fL

SCIS Self Clamped Inductive Switching T

= 5V, See Fig. 14

V

GE

= V

V

CE

GE,

See Fig. 10

= 12V

V

CE

= 14V, RL = 1Ω,

CE

V

= 5V, RG = 1KΩ

GE

= 25°C

T

J

= 300V, L = 500µHy,

CE

V

= 5V, RG = 1KΩ

GE

= 25°C, See Fig. 12

T

J

= 25°C, L = 3.0mHy,

J

= 1KΩ, VGE = 5V, See

R

G

= 25°C1.3 - 2.3 V

T

C

= 150°C0.75 - 1.8 V

T

C

Fig. 1 & 2

-12-nC

-3.4- V

-0.61- µs

-3.64- µs

- - 200 mJ

Thermal Characteristics

R

©2002 Fairchild Semiconductor Corporation ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B2, April 2002

Thermal Resistance Junction-Case T O-252, TO-263, TO-220 - - 1.15 °C/W

θJC

Typical Performance Curves (Continued)

ISL9V2040D3S / ISL9V2040S3S / ISL9 V2040P3

20
18
16
14
12
10

TJ = 150°C

8
6
4

, INDUCTIVE SWITCHING CURRENT (A)

2

SCIS

I

SCIS Curves valid for V

0

t

RG = 1KΩ, VGE = 5V,Vdd = 14V

TJ = 25°C

Voltages of <430V

clamp

, TIME IN CLAMP (µS)

CLP

16014012001004020 60 80

180 200

Figure 1. Self Clamped Inductive Switching

Current vs Time in Clamp

1.60
ICE = 6A

1.55

1.50

1.45

1.40

1.35

1.30

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

V

1.25

-75 25-25 17512575

VGE = 8.0V

T

, JUNCTION TEMPERATURE (°C)

J

VGE = 3.7V

VGE = 4.0V

VGE = 4.5V

VGE = 5.0V

Figure 3. Collector to Emitter On-State Voltage vs

Junction Temperature

20
18
16
14
12
10

8
6
4

, INDUCTIVE SWITCHING CURRENT (A)

2

SCIS

I

0

0102468

TJ = 150°C

SCIS Curves valid for V

RG = 1KΩ, VGE = 5V,Vdd = 14V

TJ = 25°C

Voltages of <430V

clamp

L, INDUCTANCE (mHy)

Figure 2. Self Clamped Inductive Switching

Current vs Inductance

2.4
ICE = 10A

VGE = 4.0V

VGE = 8.0V

VGE = 3.7V

VGE = 4.5V

VGE = 5.0V

2.2

2.0

1.8

1.6

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

V

1.4

-75 25-25 17512575

T

, JUNCTION TEMPERATURE (°C)

J

Figure 4. Collector to Emitter On-State Voltage

vs Junction Temperature

20

VGE = 8.0V
VGE = 5.0V
VGE = 4.5V

15

VGE = 4.0V
VGE = 3.7V

10

5

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

0

02.01.0 3.0 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)

TJ = - 40°C

Figure 5. Collector to Emitter On-State Voltage vs

Collector Current

©2002 Fairchild Semiconductor Corporation ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B2, April 2002

20

VGE = 8.0V
VGE = 5.0V
VGE = 4.5V

15

VGE = 4.0V
VGE = 3.7V

10

5

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

0

02.01.0 3.0 4.0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

TJ = 25°C

Figure 6. Collector to Emitter On-State Voltage

vs Collector Current

Typical Performance Curves (Continued)

ISL9V2040D3S / ISL9V2040S3S / ISL9 V2040P3

20

VGE = 8.0V
VGE = 5.0V
VGE = 4.5V

15

VGE = 4.0V

VGE = 3.7V

10

5

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

0

02.01.0 3.0 4.0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

TJ = 175°C

Figure 7. Collector to Emitter On-State Voltage vs

Collector Current

15.0
VGE = 4.0V

12.5

10.0

7.5

30

DUTY CYCLE < 0.5%, VCE = 5V

PULSE DURATION = 250µs

25

20

15

10

5

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

0

TJ = 150°C

TJ = 25°C

2.01.0 3.0 4.0

VGE, GATE TO EMITTER VOLTAGE (V)

Figure 8. Transfer Characteristics

2.4

2.2

2.0

1.8

TJ = -40°C

5.0

VCE = VGE
ICE = 1mA

5.0

, DC COLLECTOR CURRENT (A)

2.5

CE

I

0

25 1751257550 100 150

TC, CASE TEMPERATURE (°C)

Figure 9. DC Collector Current vs Case

Temperature

10000

V

= 24V

1000

100

10

LEAKAGE CURRENT (µA)

1

0.1

TJ, JUNCTION TEMPERATURE (°C)

ECS

V

= 300V

CES

V

= 250V

CES

25-25 17512575-50 0 50 100 150

Figure 11. Leakage Current vs Junction

Temperature

1.6

, THRESHOLD VOLTAGE (V)

TH

V

1.4

1.2

-50 1257525-25

0 50 100 150

TJ JUNCTION TEMPERATURE (°C)

Figure 10. Threshold Voltage vs Junction

Temperature

10

ICE = 6.5A, VGE = 5V, RG = 1KΩ

Inductive t

8

6

SWITCHING TIME (µS)

4

2

25 1751257550 100 150

OFF

Resistive t

OFF

T

, JUNCTION TEMPERATURE (°C)

J

Resistive t

Figure 12. Switching Time vs Junction

Temperature

175

ON

©2002 Fairchild Semiconductor Corporation ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B2, April 2002

Typical Performance Curves (Continued)

ISL9V2040D3S / ISL9V2040S3S / ISL9 V2040P3

1200

1000

800

600

400

C, CAPACITANCE (pF)

200

0

0105152025

C

RES

C

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

C

OES

IES

FREQUENCY = 1 MHz

Figure 13. Capacitance vs Collector to Emitter

8

I

= 1mA, RL = 1.25Ω, TJ = 25°C

G(REF)

7

6

V

= 12V

CE

5

4

3

2

, GATE TO EMITTER VOLTAGE (V)

1

GE

V

0

0 5 10 15 20 25

VCE = 6V

QG, GATE CHARGE (nC)

Figure 14. Gate Charge

Voltage

415

410

405

400

395

390

385

, BREAKDOWN VOLTAGE (V)

380

CER

BV

375

370

10 20001000 3000

TJ = 175°C

TJ = 25°C

100

RG, SERIES GATE RESISTANCE (kΩ)

Figure 15. Breakdown Voltage vs Series Gate Resistance

I

= 10mA

CER

TJ = - 40°C

0

10

0.5

0.2

t

1

P

D

t

2

2

X R

θ

JC

-1

10

) + T

θ

JC

C

0

10

10

, NORMALIZED THERMAL RESPONSE

thJC

Z

10

0.1

-1

0.05

0.02

0.01

-2

-5

10

SINGLE PULSE

-4

10

-3

10

T1, RECTANGULAR PULSE DURATION (s)

10

DUTY FACTOR, D = t1 / t
PEAK TJ = (PD X Z

-2

Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case

©2002 Fairchild Semiconductor Corporation ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B2, April 2002

Test Circuit and Waveforms

ISL9V2040D3S / ISL9V2040S3S / ISL9 V2040P3

L

C

R

PULSE

GEN

G

DUT

G

E

Figure 17. Inductive Switching Test Circuit

V

CE

L

VARY t

TO OBTAIN

P

REQUIRED PEAK I

V

GE

t

0V

P

AS

R

G

DUT

I

AS

0.01Ω

V

CE

R

or

LOAD

L

C

5V

RG = 1KΩ

G

DUT

+

V

CE

-

E

Figure 18. t

+

V

DD

-

0

ON

and t

I

AS

Switching Test Circuit

OFF

BV

CES

t

P

t

AV

V

CE

V

DD

Figure 19. Unclamped Energy Test Circuit Figure 20. Unclamped Energy Waveforms

©2002 Fairchild Semiconductor Corporation ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B2, April 2002

ISL9V2040D3S / ISL9V2040S3S / ISL9 V2040P3

SPICE Thermal Model

REV 25 April 2002
ISL9V2040D3S, I SL9V2040S3S, ISL9V2040P3
CTHERM1 th 6 1.3e -2

CTHERM2 6 5 8.8e -4
CTHERM3 5 4 8.8e -3
CTHERM4 4 3 3.9e -1
CTHERM5 3 2 3.6e -1
CTHERM6 2 tl 1.9e -1

RTHERM1 th 6 1.2e -1
RTHERM2 6 5 3.2e -1
RTHERM3 5 4 1.7e -1
RTHERM4 4 3 1.2e -1
RTHERM5 3 2 1.3e -1
RTHERM6 2 tl 2.5e -1

SABER Thermal Model

SABER thermal model
ISL9V2040D3S, I SL9V2040S3S, ISL9V2040P3

template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 1.3e -3
ctherm.ctherm2 6 5 = 8.8e -4
ctherm.ctherm3 5 4 = 8.8e -3
ctherm.ctherm4 4 3 = 3.9e -1
ctherm.ctherm5 3 2 = 3.6e -1
ctherm.ctherm6 2 t l = 1.9e -1

rtherm.rtherm1 th 6 = 1.2e -1
rtherm.rtherm2 6 5 = 3.2e -1
rtherm.rtherm3 5 4 = 1.7e -1
rtherm.rtherm4 4 3 = 1.2e -1
rtherm.rtherm5 3 2 = 1.3e -1
rtherm.rtherm6 2 tl = 2.5e -1
}

RTHERM1

RTHERM2

RTHERM3

RTHERM4

RTHERM5

JUNCTION

th

CTHERM1

6

CTHERM2

5

CTHERM3

4

CTHERM4

3

CTHERM5

2

RTHERM6

tl

©2002 Fairchild Semiconductor Corporation ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B2, April 2002

CTHERM6

CASE

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx
Bottomless
CoolFET
CROSSVOL T
DenseTrench
DOME
EcoSPARK
E2CMOS
EnSigna

TM

TM

FACT
FACT Quiet Series

STAR*POWER is used under license

FAST
FASTr
FRFET
GlobalOptoisolator
GTO
HiSeC

2

I

C
ISOPLANAR
LittleFET
MicroFET
MicroPak

MICROWIRE
OPTOLOGIC

â

OPTOPLANAR
PACMAN
POP
Power247
PowerTrench

â

QFET
QS
QT Optoelectronics
Quiet Series

SILENT SWITCHER
SMART START
SPM
STAR*POWER
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
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ââ

UHC
UltraFET
VCX

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

â

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or
In Design

First Production

Full Production

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H5