Monolithic Dual PWM Hybrid Controller
Powering AMD SVI Split-Plane and PVI
Uniplane Processors
The ISL6324A dual PWM controller delivers high efficiency
and tight regulation from two synchronous buck DC/DC
converters. The ISL6324A supports hybrid power control of
AMD processors which operate from either a 6-bit parallel
VID interface (PVI) or a serial VID interface (SVI). The dual
output ISL6324A features a multi-phase controller to support
uniplane VDD core voltage and a single phase controller to
power the Northbridge (VDDNB) in SVI mode. Only the
multi-phase controller is active in PVI mode to support
uniplane VDD only processors.
A precision uniplane core voltage regulation system is provided
by a 2-to-4-phase PWM voltage regulator (VR) controller. The
integration of two power MOSFET drivers, adding flexibility in
layout, reduce the number of external components in the multiphase section. A single phase PWM controller with integrated
driver provides a second precision voltage regulation system
for the North Bridge portion of the processor. This monolithic,
dual controller with integrated driver solution provides a cost
and space saving power management solution.
For applications which benefit from load line programming to
reduce bulk output capacitors, the ISL6324A features output
voltage droop. The multi-phase portion also includes
advanced control loop features for optimal transient response
to load application and removal. One of these features is
highly accurate, fully differential, continuous DCR current
sensing for load line programming and channel current
balance. Dual edge modulation is another unique feature,
allowing for quicker initial response to high di/dt load
transients.
The ISL6324A supports Power Savings Mode by dropping
phases when the PSI_L bit is set. The number of phases
that the ISL6324A will drop to is programmable through an
2
I
C interface. The number of PWM cycles between both
dropping phases when entering Power Savings Mode and
adding phases when exiting Power Savings Mode is also
programmable through the I
The ISL6324A I2C interface also allows independent
programmable output voltage offset for both the Core and
North Bridge regulators. The I
to set the PGOOD and OVP trip levels for both regulators as
well.
2
C interface.
2
C interface can also be used
March 23, 2009
FN6880.0
Features
Processor Core Voltage Regulator Features
• Configuration Flexibility
- 2-Phase Operation with Internal Drivers
- 3- or 4-Phase Operation with External PWM Drivers
• Parallel VID (6-bit) Interface Inputs for PVI Mode
• PSI_L Support via Phase Shedding
• Differential Remote Voltage Sensing
• Optimal Processor Core Voltage Transient Response
- Adaptive Phase Alignment (APA)
- Active Pulse Positioning Modulation
Processor Core Voltage Regulator and North Bridge
Voltage Regulator Shared Features
• Precision Voltage Regulation: ±0.5% System Accuracy
Over-Temperature
• Two Wire, AMD Compliant Serial VID Interface Inputs for
SVI Mode
2
C Interface
•I
- Voltage Margining, OVP and PGOOD Trip Levels
- Enhanced PSI_L State Control
• Fully Differential, Continuous DCR Current Sensing
- Accurate Load Line Programming
- Precision Channel Current Balancing for Core
• Overcurrent Protection
• Multi-tiered Overvoltage Protection
• Variable Gate Drive Bias: 5V to 12V
• Simultaneous Digital Soft-Start of Both Outputs
• Selectable Switching Frequency up to 1MHz
• Pb-Free (RoHS Compliant)
Ordering Information
PART
NUMBER
(Note)
ISL6324ACRZ* ISL6324A CRZ 0 to +70 48 Ld 7x7 QFN L48.7x7
ISL6324AIRZ* ISL6324A IRZ -40 to +85 48 Ld 7x7 QFN L48.7x7
*Add “-T” suffix for tape and reel. Please refer to TB347 for details on
reel specifications.
NOTE: These Intersil Pb-free plastic packaged products employ
special Pb-free material sets, molding compounds/die attach materials,
and 100% matte tin plate plus anneal (e3 termination finish, which is
RoHS compliant and compatible with both SnPb and Pb-free soldering
operations). Intersil Pb-free products are MSL classified at Pb-free peak
reflow temperatures that meet or exceed the Pb-free requirements of
IPC/JEDEC J STD-020.
PART
MARKING
TEMP.
RANGE
(°C)
PACKAGE
(Pb-free)
PKG.
DWG . #
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
| Intersil (and design) is a registered trademark of Intersil Americas Inc.
All other trademarks mentioned are the property of their respective owners.
Copyright Intersil Americas Inc. 2009. All Rights Reserved
Input, Output, or I/O Voltage . . . . . . . . . GND - 0.3V to VCC + 0.3V
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
NOTES:
is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
1. θ
JA
Tech Brief TB379.
2. For θ
, the “case temp” location is the center of the exposed metal pad on the package underside.
JC
3. Limits should be considered typical and are not production tested.
Electrical SpecificationsRecommended Operating Conditions (0°C to +70°C), Unless Otherwise Specified. Parameters with MIN and/or
MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by
characterization and are not production tested.
PARAMETERTEST CONDITIONSMINTYPMAXUNITS
BIAS SUPPLIES
Input Bias Supply CurrentI
Gate Drive Bias Current - PVCC1_2 PinI
Gate Drive Bias Current - PVCC_NB PinI
VCC POR (Power-On Reset) ThresholdVCC Rising4.204.354.50V
PVCC POR (Power-On Reset) ThresholdPVCC Rising4.204.354.50V
PWM MODULATOR
Oscillator Frequency Accuracy, f
SW
Typical Adjustment Range of Switching
Frequency
Oscillator Ramp Amplitude, V
P-P
Maximum Duty Cycle (Note 3)99.5%
CONTROL THRESHOLDS
EN Rising Threshold0.800.880.92V
EN Hysteresis70130190mV
PWROK Input HIGH Threshold1.1V
PWROK Input LOW Threshold0.95V
VDDPWRGD Sink CurrentOpen drain, V_VDDPWRGD = 400mV4mA
PWM Channel Disable ThresholdV
; EN = high152225mA
VCC
PVCC1_2
PVCC_NB
; EN = high11.83mA
; EN = high0.30.92mA
VCC Falling3.703.854.05V
PVCC Falling3.703.854.05V
RT = 100kΩ (±0.1%) to Ground, (All Temps)
(Droop Enabled)
Electrical SpecificationsRecommended Operating Conditions (0°C to +70°C), Unless Otherwise Specified. Parameters with MIN and/or
MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by
characterization and are not production tested. (Continued)
PARAMETERTEST CONDITIONSMINTYPMAXUNITS
REFERENCE AND DAC
System Accuracy (VDAC > 1.000V)-0.60.6%
System Accuracy (0.600V < VDAC < 1.000V)-1.01.0%
System Accuracy (VDAC < 0.600V)-2.02.0%
DVC Voltage GainVDAC = 1V2.0V
APA Current ToleranceV
ERROR AMPLIFIER
DC GainR
Gain-Bandwidth Product (Note 3)C
Slew Rate (Note 3)C
Maximum Output VoltageLoad = 1mA3.804.20V
Minimum Output VoltageLoad = -1mA1.31.6V
SOFT-START RAMP
Soft-Start Ramp Rate2.23.04.0mV/µs
PWM OUTPUTS
PWM Output Voltage LOW ThresholdI
PWM Output Voltage HIGH ThresholdI
CURRENT SENSING - CORE CONTROLLER
Sensed Current ToleranceV
CURRENT SENSING - NB CONTROLLER
Sensed Current ToleranceV
DROOP CURRENT
ToleranceV
OVERCURRENT PROTECTION
Overcurrent Trip Level - Average ChannelNormal Operation, R
Overcurrent Limiting- Individual ChannelNormal Operation, R
POWER-GOOD
Core Overvoltage ThresholdVSEN Rising
Undervoltage ThresholdVSEN Falling (Core)
Power Good Hysteresis50mV
OVERVOLTAGE PROTECTION
OVP Trip LevelBit 7 of I
OVP Lower Gate Release Threshold350400mV
SWITCHING TIME (Note 3) [See “Timing Diagram” on page 8]
UGATE Rise Time t
LGATE Rise Time t
= 1V90100108µA
APA
= 10k to ground, (Note 3)96dB
L
= 100pF, RL = 10k to ground, (Note 3)20MHz
L
= 100pF, Load = ±400µA, (Note 3)8V/µs
L
= ±500µA0.5V
LOAD
= ±500µA4.5V
LOAD
- V
ISENn-
4 Phases, T
ISEN_NB-
R
= 37.6kΩ, 4 Phases, TA = +25°C
SET
- V
ISENn-
4 Phases, T
ISENn+
= +25°C
A
- V
ISEN_NB+
ISENn+
= +25°C
A
= 23.2mV, R
= 23.2mV,
= 23.2mV, R
= 28.2kΩ87100120µA
SET
SET
SET
= 37.6kΩ,
= 37.6kΩ,
6888µA
6889µA
6888µA
Dynamic VID Change (Note 3)130µA
= 28.2kΩ142µA
SET
Dynamic VID Change (Note 3)190µA
2
Bit 6 of I
Bit 6 of I
ISEN_NB+ Falling (North Bridge)
Bit 6 of I
RUGATE; VPVCC
RLGATE; VPVCC
C data = 0
2
C data = 0
2
C data = 0
2
C data = 0, VDAC ≤ 1.55V1.731.801.84V
= 12V, 3nF Load, 10% to 90%26ns
= 12V, 3nF Load, 10% to 90%18ns
VDAC +
225mV
VDAC -
325mV
VDAC -
310mV
VDAC +
250mV
VDAC -
300mV
VDAC -
275mV
VDAC +
275mV
VDAC -
270mV
VDAC -
235mV
mV
mV
V
7
FN6880.0
March 23, 2009
Page 8
ISL6324AISL6324A
Electrical SpecificationsRecommended Operating Conditions (0°C to +70°C), Unless Otherwise Specified. Parameters with MIN and/or
MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by
characterization and are not production tested. (Continued)
PARAMETERTEST CONDITIONSMINTYPMAXUNITS
UGATE Fall Time t
LGATE Fall Timet
UGATE Turn-On Non-overlapt
LGATE Turn-On Non-overlapt
= 12V, 3nF Load, 90% to 10%18ns
= 12V, 3nF Load, 90% to 10%12ns
; V
= 12V , 3nF Load, Adaptive10ns
PVCC
; V
= 12V, 3nF Load, Adaptive10ns
PVCC
Timing Diagram
UGATE
LGATE
t
PDHUGATE
t
8
FLGATE
t
RUGATE
t
t
PDHLGATE
FUGATE
t
RLGATE
FN6880.0
March 23, 2009
Page 9
ISL6324AISL6324A
Functional Pin Description
VID1/SEL
This pin selects SVI or PVI mode operation based on the state
of the pin prior to enabling the ISL6324A. If the pin is LO prior
to enable, the ISL6324A is in SVI mode and the dual purpose
pins [VID0/VFIXEN, VID2/SVC, VID3/SVD] use their SVI
mode related functions. If the pin held HI prior to enable, the
ISL6324A is in PVI mode and dual purpose pins use their
VIDx related functions to decode the correct DAC code.
VID0/VFIXEN
If VID1 is LO prior to enable [SVI Mode], the pin is functions
as the VFIXEN selection input from the AMD processor for
determining SVI mode versus VFIX mode of operation.
If VID1 is HI prior to enable [PVI Mode], the pin is used as
DAC input VID0. This pin has an internal 30µA pull-down
current applied to it at all times.
VID2/SVD
If VID1 is LO prior to enable [SVI Mode], this pin is the serial
VID data bi-directional signal to and from the master device on
AMD processor. If VID1 is HI prior to enable [PVI Mode], this
pin is used to decode the programmed DAC code for the
processor. In PVI mode, this pin has an internal 30µA pull-down
current applied to it. There is no pull-down current in SVI mode.
VID3/SVC
If VID1 is LO prior to enable [SVI Mode], this pin is the serial
VID clock input from the AMD processor . If VID1 is HI prior to
enable [PVI Mode], the ISL6324A is in PVI mode and this pin
is used to decode the programmed DAC code for the
processor. In PVI mode, this pin has an internal 30µ A
pull-down current applied to it. There is no pull-down current in
SVI mode.
VID4
This pin is active only when the ISL6324A is in PVI mode.
When VID1 is HI prior to enable, the ISL6324A decodes the
programmed DAC voltage required by the AMD processor.
This pin has an internal 30µA pull-down current applied to it at
all times.
VID5
This pin is active only when the ISL6324A is in PVI mode.
When VID1 is HI prior to enable, the ISL6324A decodes the
programmed DAC voltage required by the AMD processor.
This pin has an internal 30µA pull-down current applied to it at
all times.
VCC
VCC is the bias supply for the ICs small-signal circuitry.
Connect this pin to a +5V supply and decouple using a
quality 0.1µF ceramic capacitor.
PVCC1_2
The power supply pin for the multi-phase internal MOSFET
drivers. Connect this pin to any voltage from +5V to +12V
depending on the desired MOSFET gate-drive level.
Decouple this pin with a quality 1.0µF ceramic capacitor.
PVCC_NB
The power supply pin for the internal MOSFET driver for the
Northbridge controller. Connect this pin to any voltage from
+5V to +12V depending on the desired MOSFET gate-drive
level. Decouple this pin with a quality 1.0µF ceramic capacitor .
GND
GND is the bias and reference ground for the IC. The GND
connection for the ISL6324A is through the thermal pad on
the bottom of the package.
EN
This pin is a threshold-sensitive (approximately 0.85V) system
enable input for the controller. Held low, this pin disables both
CORE and NB controller operation. Pulled high, the pin
enables both controllers for operation.
When the EN pin is pulled high, the ISL6324A will be placed
in either SVI or PVI mode. The mode is determined by the
latched value of VID1 on the rising edge of the EN signal.
A third function of this pin is to provide driver bias monitor for
external drivers. A resistor divider with the center tap
connected to this pin from the drive bias supply prevents
enabling the controller before insufficient bias is provided to
external driver. The resistors should be selected such th at
when the POR-trip point of the external driver is reached, the
voltage at this pin meets the above mentioned threshold level .
FS
A resistor, placed from FS to Ground or from FS to VCC,
sets the switching frequency of both controllers. Refer to
Equation 1 for proper resistor calculation.
10.61 1.035fs()log–[]
10
=
R
T
With the resistor tied from FS to Ground, Droop is enabled.
With the resistor tied from FS to VCC, Droop is disabled.
(EQ. 1)
VSEN and RGND
VSEN and RGND are inputs to the core voltage regulator
(VR) controller precision differential remote-sense amplifier
and should be connected to the sense pins of the remote
processor core(s), VDDFB[H,L].
FB and COMP
These pins are the internal error amplifier inverting input and
output respectively of the core VR controller. FB, VSEN and
COMP are tied together through external R-C networks to
compensate the regulator.
APA
Adaptive Phase Alignment (APA) pin for setting trip level and
adjusting time constant. A 100µA current flows into the APA
pin and by tying a resistor from this pin to COMP the trip
level for the Adaptive Phase Alignment circuitry can be set.
9
FN6880.0
March 23, 2009
Page 10
ISL6324AISL6324A
ISEN1-, ISEN1+, ISEN2-, ISEN2+, ISEN3-, ISEN3+,
ISEN4-, and ISEN4+
These pins are used for differentially sensing the corresponding
channel output currents. The sensed currents are used for
channel balancing, protection, and core load line regulation.
Connect ISEN1-, ISEN2-, ISEN3-, and ISEN4- to the node
between the RC sense elements surrounding the inductor of
their respective channel. Tie the ISEN+ pins to the VCORE
side of their corresponding channel’s sense capacitor.
UGATE1 and UGATE2
Connect these pins to the corresponding upper MOSFET
gates. These pins are used to control the upper MOSFETs
and are monitored for shoot-through prevention purposes.
Maximum individual channel duty cycle is limited to 93.3%.
BOOT1 and BOOT2
These pins provide the bias voltage for the corresponding
upper MOSFET drives. Connect these pins to appropriately
chosen external bootstrap capacitors. Internal bootstrap
diodes connected to the PVCC1_2 pin provide the
necessary bootstrap charge.
PHASE1 and PHASE2
Connect these pins to the sources of the corresponding
upper MOSFETs. These pins are the return path for the
upper MOSFET drives.
LGATE1 and LGATE2
These pins are used to control the lower MOSFET s. Connect
these pins to the corresponding lower MOSFETs’ gates.
PWM3 and PWM4
Pulse-width modulation outputs. Connect these pins to the
PWM input pins of an Intersil driver IC if 3- or 4-phase
operation is desired. Connect the ISEN- pins of the channels
not desired to +5V to disable them and configure the core
VR controller for 2-phase or 3-phase operation.
PWROK
System wide Power Good signal. If this pin is low, the two
SVI bits are decoded to determine the “metal VID”. When the
pin is high, the SVI is actively running its protocol.
RSET
Connect this pin to the VCC pin through a resistor (R
set the effective value of the internal R
resistors. The values of the R
than 20kΩ and no more than 80kΩ. A 0.1µF capacitor
should be placed in parallel to the R
resistor should be no less
SET
current sense
ISEN
resistor.
SET
SET
) to
VDDPWRGD
During normal operation this pin indicates wh ether both output
voltages are within specified overvoltage and undervolt age
limits. If either output voltage exceeds these limits or a re set
event occurs (such as an overcurrent event), the pin is pulled
low. This pin is always low prior to the end of sof t-start.
DVC
The DVC pin is a buffered version of the reference to the error
amplifier. A series resistor and capaci tor between the DVC pin
and FB pin smooth the voltage transition d uring VID-on-the-fly
operations.
FB_NB and COMP_NB
These pins are the internal error amplifier inverting input and
output respectively of the NB VR controller. FB_NB,
VDIFF_NB, and COMP_NB are tied together through
external R-C networks to compensate the re gu l at o r.
ISEN_NB-, ISEN_NB+
These pins are used for differentially sensing the North
Bridge output current. The sensed current is used for
protection and load line regulation if droop is enabled.
Connect ISEN_NB- to the node between the RC sense
element surrounding the inductor. Tie the ISEN_NB+ pin to
the VNB side of the sense capacitor.
UGATE_NB
Connect this pin to the corresponding upper MOSFET gate.
This pin provides the PWM-controlled gate drive for the
upper MOSFET and is monitored for shoot-through
prevention purposes.
BOOT_NB
This pin provides the bias voltage for the corresponding
upper MOSFET drive. Connect this pin to appropriately
chosen external bootstrap capacitor. The internal bootstrap
diode connected to the PVCC_NB pin provides the
necessary bootstrap charge.
PHASE_NB
Connect this pin to the source of the corresponding upper
MOSFET. This pin is the return path for the upper MOSFET
drive. This pin is used to monitor the voltage drop across the
upper MOSFET for overcurrent protection.
LGATE_NB
Connect this pin to the corresponding MOSFET’s gate. This
pin provides the PWM-controlled gate drive for the lower
MOSFET. This pin is also monitored by the adaptive
shoot-through protection circuitry to determine when the
lower MOSFET has turned off.
SCL
Connect this pin to the clock signal for the I2C bus, which is
a logic level input signal. The clock signal tells the controller
when data is available on th e I
2
C bus.
SDA
Connect this pin to the bidirectional data line of the I2C bus,
which is a logic level input/output signal. All I
over this line, including the address of the device the bus is
trying to communicate with, and what functions the device
should perform.
2
C data is sent
10
FN6880.0
March 23, 2009
Page 11
ISL6324A
Operation
The ISL6324A utilizes a multi-phase architecture to provide
a low cost, space saving power conversion solution for the
processor core voltage. The controller also implements a
simple single phase architecture to provide the Northbridge
voltage on the same chip.
Multi-phase Power Conversion
Microprocessor load current profiles have changed to the
point that the advantages of multi-phase power conversion
are impossible to ignore. The technical challenges
associated with producing a single-phase converter that is
both cost-effective and thermally viable have forced a
change to the cost-saving approach of multi-phase. The
ISL6324A controller helps simplify implementation by
integrating vital functions and requiring minimal external
components. The “Controller Block Diagram” on page 3
provides a top level view of the multi-phase power
conversion using the ISL6324A controller.
Interleaving
The switching of each channel in a multi-phase converter is
timed to be symmetrically out-of-phase with each of the other
channels. In a 3-phase converter, each channel switches 1/3
cycle after the previous channel and 1/3 cycle before the
following channel. As a result, the three-phase converter has a
combined ripple frequency three times greater than the ripple
frequency of any one phase. In addition, the peak-to-peak
amplitude of the combined inductor currents is reduced in
proportion to the number of phases (Equations 2 and 3).
Increased ripple frequency and lower ripple amplitude mean
that the designer can use less per-channel inductance and
lower total output capacitance for any performance
specification.
Figure 1 illustrates the multiplicative effect on output ripple
frequency. The three channel currents (IL1, IL2, and IL3)
combine to form the AC ripple current and the DC load
current. The ripple component has three times the ripple
frequency of each individual channel current. Each PWM
pulse is terminated 1/3 of a cycle after the PWM pulse of the
previous phase. The peak-to-peak current for each phase is
about 7A, and the DC components of the inductor currents
combine to feed the load.
T o understand the reduction of ripple current amplitude in the
multi-phase circuit, examine Equation 2, which represents
an individual channel peak-to-peak inductor current.
In Equation 2, V
voltages respectively, L is the single-channel inductor value,
and f
is the switching frequency.
S
(EQ. 2)
The output capacitors conduct the ripple component of the
inductor current. In the case of multi-phase converters, the
capacitor current is the sum of the ripple currents from each
of the individual channels. Compare Equation 2 to the
expression for the peak-to-peak current after the summation
of N symmetrically phase-shifted inductor currents in
Equation 3. Peak-to-peak ripple current decreases by an
amount proportional to the number of channels. Output
voltage ripple is a function of capacitance, capacitor
equivalent series resistance (ESR), and inductor ripple
current. Reducing the inductor ripple current allows the
designer to use fewer or less costly output capacitors.
Another benefit of interleaving is to reduce input ripple
current. Input capacitance is determined in part by the
maximum input ripple current. Multi-phase topologies can
improve overall system cost and size by lowering input ripple
current and allowing the designer to reduce the cost of input
capacitance. The example in Figure 2 illustrates input
currents from a three-phase converter combining to reduce
the total input ripple current.
The converter depicted in Figure 2 delivers 1.5V to a 36A load
from a 12V input. The RMS input capacitor current is 5.9A.
Compare this to a single-phase conve rter also step ping down
12V to 1.5V at 36A. The single-phase converter has
11.9A
input capacitor current. The single-phase converter
RMS
must use an input capacitor bank with twice the RMS current
capacity as the equivalent three-phase converter .
Figures 26, 27 and 28 in the section entitled “Input Capacitor
Selection” on page 35 can be used to determine the input
capacitor RMS current based on load current, duty cycle,
and the number of channels. They are provided as aids in
determining the optimal input capacitor solution.
IL1 + IL2 + IL3, 7A/DIV
IL3, 7A/DIV
PWM3, 5V/DIV
IL2, 7A/DIV
PWM2, 5V/DIV
IL1, 7A/DIV
PWM1, 5V/DIV
1µs/DIV
FIGURE 1. PWM AND INDUCTOR-CURRENT WA VEFORMS
FOR 3-PHASE CONVERTER
11
FN6880.0
March 23, 2009
Page 12
ISL6324A
INPUT-CAPACITOR CURRENT, 10A/DIV
CHANNEL 3
INPUT CURRENT
10A/DIV
CHANNEL 2
INPUT CURRENT
10A/DIV
CHANNEL 1
INPUT CURRENT
10A/DIV
1μs/DIV
FIGURE 2. CHANNEL INPUT CURRENTS AND INPUT
CAPACITOR RMS CURRENT FOR 3-PHASE
CONVERTER
Active Pulse Positioning Modulated PWM Operation
The ISL6324A uses a proprietary Active Pulse Positioning
(APP) modulation scheme to control the internal PWM signals
that command each channel’s driver to turn their upper and
lower MOSFETs on and off. The time interval in which a PWM
signal can occur is generated by an internal clock, whose cycle
time is the inverse of the switching frequency set by the resistor
between the FS pin and ground. The advantage of Intersil’s
proprietary Active Pulse Positioning (APP) modulator is that the
PWM signal has the ability to turn on at any point during this
PWM time interval, and turn off immediately after the PWM
signal has transitioned high. This is important because it allows
the controller to quickly respond to output voltage drops
associated with current load spikes, while avoiding the ring
back affects associated with other modulation schemes.
To further improve the transient response, ISL6324A also
implements Intersil’s proprietary Adaptive Phase Alignment
(APA) technique, which turns on all phases together under
transient events with large step current. With both APP and
APA control, ISL6324A can achieve excellent transient
performance and reduce the demand on the output capacitors.
Adaptive Phase Alignment (APA)
To further improve the transient response, the ISL6324A
also implements Intersil’s proprietary Adaptive Phase
Alignment (APA) technique, which turns on all of the
channels together at the same time during large current step
transient events. As Figure 3 shows, the APA circuitry works
by monitoring the voltage on the APA pin and comparing it to
a filtered copy of the voltage on the COMP pin. The voltage
on the APA pin is a copy of the COMP pin voltage that has
been negatively offset. If the APA pin exceeds the filtered
COMP pin voltage an APA event occurs and all of the
channels are forced on.
EXTERNAL CIRCUIT
APA
-
C
R
APA
FIGURE 3. ADAPTIVE PHASE ALIGNMENT DETECTION
APA
V
APA,TRIP
+
COMP
ISL6324A INTERNAL CIRCUIT
100µA
+
APA
-
-
LOW
PASS
FILTER
ERROR
AMPLIFIER
+
CIRCUITRY
TO APA
The PWM output state is driven by the position of the error
amplifier output signal, V
, minus the current correction
COMP
signal relative to the proprietary modulator ramp waveform as
illustrated in Figure 3. At the beginning of each PWM time
interval, this modified V
internal modulator waveform. As long as the modified V
signal is compared to the
COMP
COMP
voltage is lower then the modulator waveform voltage, the
PWM signal is commanded low. The internal MOSFET driver
detects the low state of the PWM signal and turns off the
upper MOSFET and turns on the lower synchronous
MOSFET. When the modified V
voltage crosses the
COMP
modulator ramp, the PWM output transitions high, turning off
the synchronous MOSFET and turning on the upper
MOSFET. The PWM signal will remain high until the modified
V
voltage crosses the modulator ramp again. When this
COMP
occurs the PWM signal will transition low again.
During each PWM time interval the PWM signal can only
transition high once. Once PWM transitions high it can not
transition high again until the beginning of the next PWM
time interval. This prevents the occurrence of double PWM
pulses occurring during a single period.
12
The APA trip level is the amount of DC offset between the
COMP pin and the APA pin. This is the voltage excursion
that the APA and COMP pins must have during a transient
event to activate the Adaptive Phase Alignment circuitry.
This APA trip level is set through a resistor, R
connects from the APA pin to the COMP pin. A 100µA
current flows across R
into the APA pin to set the APA
APA
APA
, that
trip level as described in Equation 4. An APA trip level of
500mV is recommended for most applications. A 0.1µF
capacitor, C
, should also be placed across the R
APA
APA
resistor to help with noise immunity.
V
APA TRIP,
R
APA
100 106–×⋅=
(EQ. 4)
PWM Operation
The timing of each core channel is set by the number of
active channels. Channel detection on the ISEN3- and
ISEN4- pins selects 2-Channel to 4-Channel operation for
the ISL6324A. The switching cycle is defined as the time
between PWM pulse termination signals of each channel.
The cycle time of the pulse signal is the inverse of the
FN6880.0
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ISL6324A
switching frequency set by the resistor between the FS pin
and ground. The PWM signals command the MOSFET
driver to turn on/off the channel MOSFETs.
For 4-channel operation, the channel firing order is 1-2-3-4:
PWM3 pulse happens 1/4 of a cycle after PWM4, PWM2
output follows another 1/4 of a cycle after PWM3, and
PWM1 delays another 1/4 of a cycle after PWM2. For
3-channel operation, the channel firing order is 1-2-3.
Connecting ISEN4- to VCC selects three channel operation
and the pulse times are spaced in 1/3 cycle increments. If
ISEN3- is connected to VCC, two channel operation is selected
and the PWM2 pulse happens 1/2 of a cycle after PWM1 pulse.
Continuous Current Sampling
In order to realize proper current-balance, the currents in
each channel are sampled continuously every switching
cycle. During this time, the current-sense amplifier uses the
ISEN inputs to reproduce a signal proportional to the
inductor current, I
scaled version of the inductor current.
. This sensed current, I
L
PWM
SWITCHING PERIOD
, is simply a
SEN
A simple R-C network across the inductor (R
, R2 and C)
1
extracts the DCR voltage, as shown in Figure 6. The voltage
across the sense capacitor, V
proportional to the channel current I
The ISL6324A supports Inductor DCR current sensing to
continuously sample each channel’s current for channel-current
balance. The internal circuitry, shown in Figure 6 represents
Channel N of an N-Channel converter. This circuitry is repeated
for each channel in the converter, but may not be active
depending on how many channels are operating.
Inductor windings have a characteristic distributed
resistance or DCR (Direct Current Resistance). For
simplicity, the inductor DCR is considered as a separate
lumped quantity, as shown in Figure 6. The channel current
I
, flowing through the inductor, passes through the DCR.
Ln
Equation 5 shows the S-domain equivalent voltage, V
,
L
across the inductor.
VLs() I
sL DCR+⋅()⋅=
L
n
(EQ. 5)
SAMPLE
I
SEN
+
+
VC(s)
-
R
ISEN
ISENn-
-
ISENn+
VCC
RSET
R
SET
C
SET
FIGURE 5. INDUCTOR DCR CURRENT SENSING
CONFIGURATION
If the R-C network components are selected such that the
RC time constant matches the inductor L/DCR time constant
(see Equation 8), then V
is equal to the voltage drop across
C
the DCR multiplied by the ratio of the resistor divider, K. If a
resistor divider is not being used, the value for K is 1.
L
-------------
DCR
The capacitor voltage V
effective internal sense resistor, R
current through R
current. This current, I
1R2
---------------------
R
+
1R2
C⋅=
, is then replicated across the
C
which is proportional to the inductor
ISEN
, is continuously sensed and is
SEN
. This develops a
ISEN
(EQ. 8)
⋅
R
then used by the controller for load-line regulation, channelcurrent balancing, and overcurrent detection and limiting.
Equation 9 shows that the proportion between the channel
13
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Page 14
ISL6324A
current, IL, and the sensed current, I
value of the effective sense resistance, R
, is driven by the
SEN
, and the DCR
ISEN
of the inductor.
DCR
----------------- -
I
SENIL
⋅=
R
ISEN
The effective internal R
resistance is important to the
ISEN
(EQ. 9)
current sensing process because it sets the gain of the load
line regulation loop when droop is enabled as well as the
gain of the channel-current balance loop and the overcurrent
trip level. The effective internal R
resistance is user
ISEN
programmable and is set through use of the RSET pin.
Placing a single resistor, R
VCC pin programs the effective internal R
, from the RSET pin to the
SET
resistance
ISEN
according to Equation 10.
3
R
ISEN
--------- -
400
⋅=
R
SET
(EQ. 10)
The North Bridge regulator samples the load current in the
same manner as the Core regulator does. The R
will program all the effective internal R
resistors to the
ISEN
SET
resistor
same value.
Channel-Current Balance
One important benefit of multi-phase operation is the thermal
advantage gained by distributing the dissip ated heat ove r
multiple devices and greater area. By doing this the designer
avoids the complexity of driving parallel MOSFETs and the
expense of using expensive heat sinks and exotic magnetic
materials.
In order to realize the thermal advantage, it is important that
each channel in a multi-phase converter be controlled to
carry about the same amount of current at any load level. To
achieve this, the currents through each channel must be
sampled every switching cycle. The sampled currents, I
from each active channel are summed together and divided
by the number of active channels. The resulting cycle
average current, I
, provides a measure of the total load
AVG
current demand on the converter during each switching
cycle. Channel-current balance is achieved by comparing
the sampled current of each channel to the cycle average
current, and making the proper adjustment to each channel
pulse width based on the error. Intersil’s patented current
balance method is illustrated in Figure 6, with error
correction for Channel 1 represented. In the figure, the cycle
average current, I
sample, I
, to create an error signal IER.
1
, is compared with the Channel 1
AVG
The filtered error signal modifies the pulse width
commanded by V
I
toward zero. The same method for error signal
ER
to correct any unbalance and force
COMP
correction is applied to each active channel.
,
n
.
V
COMP
NOTE: Channel 3 and 4 are optional.
FIGURE 6. CHANNEL-1 PWM FUNCTION AND CURRENT-
+
-
FILTER
f(s)
I
ER
I
AVG
-
+
I
1
BALANCE ADJUSTMENT
MODULATOR
RAMP
WAVEFORM
÷ N
PWM1
+
-
Σ
I
4
I
3
I
2
TO GATE
CONTROL
LOGIC
VID Interface
The ISL6324A supports hybrid power control of AMD
processors which operate from either a 6-bit parallel VID
interface (PVI) or a serial VID interface (SVI). The VID1/SEL
pin is used to command the ISL6324A into either the PVI
mode or the SVI mode. Whenever the EN pin is held LOW,
both the multi-phase Core and single-phase North Bridge
Regulators are disabled and the ISL6324A is continuously
sampling voltage on the VID1/SEL pin. When the EN pin is
toggled HIGH, the status of the VID1/SEL pin will latch the
ISL6324A into either PVI or SVI mode. This latching occurs
on the rising edge of the EN signal.If the VID1/SEL pin is
held LOW during the latch, the ISL6324A will be placed into
SVI mode. If the VID1/SEL pin is held HIGH during the latch,
the ISL6324A will be placed into PVI mode. For the
ISL6324A to properly enter into either mode, the level on the
VID1/SEL pin must be stable no less that 1µs prior to the EN
signal transitioning from low to high.
6-bit Parallel VID Interface (PVI)
With the ISL6324A in PVI mode, the single-phase North
Bridge regulator is disabled. Only the multi-phase controller
is active in PVI mode to support uniplane VDD only
processors. Table 1 shows the 6-bit parallel VID codes and
the corresponding reference voltage.
TABLE 1. 6-BIT PARALLEL VID CODES
VID5VID4VID3VID2VID1VID0VREF
0000001.5500
0000011.5250
0000101.5000
0000111.4750
0001001.4500
0001011.4250
0001101.4000
0001111.3750
0010001.3500
0010011.3250
14
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ISL6324A
TABLE 1. 6-BIT PARALLEL VID CODES (Continued)
VID5VID4VID3VID2VID1VID0VREF
0010101.3000
0010111.2750
0011001.2500
0011011.2250
0011101.2000
0011111.1750
0100001.1500
0100011.1250
0100101.1000
0100111.0750
0101001.0500
0101011.0250
0101101.0000
0101110.9750
0110000.9500
0110010.9250
0110100.9000
0110110.8750
0111000.8500
0111010.8250
0111100.8000
0111110.7750
1000000.7625
1000010.7500
1000100.7375
1000110.7250
1001000.7125
1001010.7000
1001100.6875
1001110.6750
1010000.6625
1010010.6500
1010100.6375
1010110.6250
1011000.6125
1011010.6000
1011100.5875
1011110.5750
1100000.5625
1100010.5500
1100100.5375
1100110.5250
1101000.5125
1101010.5000
TABLE 1. 6-BIT PARALLEL VID CODES (Continued)
VID5VID4VID3VID2VID1VID0VREF
1101100.4875
1101110.4750
1110000.4625
1110010.4500
1110100.4375
1110110.4250
1111000.4125
1111010.4000
1111100.3875
1111110.3750
Serial VID Interface (SVI)
The on-board Serial VID interface (SVI) circuitry allows the
processor to directly drive the core voltage and Northbridge
voltage reference level within the ISL6324A. The SVC and SVD
states are decoded with direction from the PWROK and
VFIXEN inputs as described in the following sections. The
ISL6324A uses a digital to analog converter (DAC) to generate
a reference voltage based on the decoded SVI value. See
Figure 7 for a simple SVI interface timing diagram.
15
FN6880.0
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Page 16
VCC
SVC
SVD
ENABLE
PWROK
VDD AND VDDNB
VDDPWRGD
VFIXEN
ISL6324A
134256789101112
METAL_VID
FIGURE 7. SVI INTERFACE TIMING DIAGRAM: TYPICAL PRE-PWROK METAL VID START-UP
V_SVI
METAL_VID
V_SVI
PRE-PWROK METAL VID
Typical motherboard start-up occurs with the VFIXEN input
low. The controller decodes the SVC and SVD inputs to
determine the Pre-PWROK metal VID setting. Once the
POR circuitry is satisfied, the ISL6324A begins decoding the
inputs per Table 2. Once the EN input exceeds the rising
enable threshold, the ISL6324A saves the Pre-PWROK
metal VID value in an on-board holding register and passes
this target to the internal DAC circuitry.
TABLE 2. PRE-PWROK METAL VID CODES
SVCSVDOUTPUT VOLTAGE (V)
001.1
011.0
100.9
110.8
The Pre-PWROK metal VID code is decoded and latched on
the rising edge of the enable signal. Once enabled, the
ISL6324A passes the Pre-PWROK metal VID code on to
internal DAC circuitry. The internal DAC circuitry begins to
ramp both the VDD and VDDNB planes to the decoded
Pre-PWROK metal VID output level. The digital soft-start
circuitry actually stair steps the internal reference to the
target gradually over a fix interval. The controlled ramp of
both output voltage planes reduces in-rush current during
the soft-start interval. At the end of the soft-start interval, the
VDDPWRGD output transitions high indicating both output
planes are within regulation limits.
If the EN input falls below the enable falling threshold, the
ISL6324A ramps the internal reference voltage down to near
zero. The VDDPWRGD de-asserts with the loss of enable.
The VDD and VDDNB planes will linearly decrease to near
zero.
VFIX MODE
In VFIX Mode, the SVC, SVD and VFIXEN inputs are fixed
external to the controller through jumpers to either GND or
VDDIO. These inputs are not expected to change, but the
ISL6324A is designed to support the potential change of
state of these inputs. If VFIXEN is high, the IC decodes the
SVC and SVD states per Table 3.
Once enabled, the ISL6324A begins to soft-start both VDD
and VDDNB planes to the programmed VFIX level. The
internal soft-start circuitry slowly stair steps the reference up
to the target value and this results in a controlled ramp of the
power planes. Once soft-start has ended and both output
planes are within regulation limits, the VDDPWRGD pin
transitions high. If the EN input falls below the enable falling
threshold, then the controller ramps both VDD and VDDNB
down to near zero.
TABLE 3. VFIXEN VID CODES
SVCSVDOUTPUT VOLTAGE (V)
001.4
011.2
101.0
110.8
SVI MODE
Once the controller has successfully soft-started and
VDDPWRGD transitions high, the Northbridge SVI interface
can assert PWROK to signal the ISL6324A to prepare for
SVI commands. The controller actively monitors the SVI
interface for set VID commands to move the plane voltages
16
FN6880.0
March 23, 2009
Page 17
ISL6324A
to start-up VID values. Details of the SVI Bus protocol are
provided in the AMD Design Guide for Voltage Regulator
Controllers Accepting Serial VID Codes specification.
Once the set VID command is received, the ISL6324A
decodes the information to determine which plane and the
VID target required. See Table 4. The internal DAC circuitry
steps the required output plane voltage to the new VID level.
During this time one or both of the planes could be targeted.
In the event the core voltage plane, VDD, is commanded to
power off by serial VID commands, the VDDPWRGD signal
If the PWROK input is de-asserted, then the controller steps
both VDD and VDDNB planes back to the stored
Pre-PWROK metal VID level in the holding register from
initial soft-start. No attempt is made to read the SVC and
SVD inputs during this time. If PWROK is reasserted, then
the on-board SVI interface waits for a set VID command.
If VDDPWRGD deasserts during normal operation, both
voltage planes are powered down in a controlled fashion.
The internal DAC circuitry stair steps both outputs down to
near zero.
remains asserted. The Northbridge voltage plane must
remain active during this time.
000_0000b1.5500010_0000b1.1500100_0000b0.7500110_0000b0.3500*
000_0001b1.5375010_0001b1.1375100_0001b0.7375110_0001b0.3375*
000_0010b1.5250010_0010b1.1250100_0010b0.7250110_0010b0.3250*
000_0011b1.5125010_0011b1.1125100_0011b0.7125110_0011b0.3125*
000_0100b1.5000010_0100b1.1000100_0100b0.7000110_0100b0.3000*
000_0101b1.4875010_0101b1.0875100_0101b0.6875110_0101b0.2875*
000_0110b1.4750010_0110b1.0750100_0110b0.6750110_0110b0.2750*
000_0111b1.4625010_0111b1.0625100_0111b0.6625110_0111b0.2625*
000_1000b1.4500010_1000b1.0500100_1000b0.6500110_1000b0.2500*
000_1001b1.4375010_1001b1.0375100_1001b0.6375110_1001b0.2375*
000_1010b1.4250010_1010b1.0250100_1010b0.6250110_1010b0.2250*
000_1011b1.4125010_1011b1.0125100_1011b0.6125110_1011b0.2125*
000_1100b1.4000010_1100b1.0000100_1100b0.6000110_1100b0.2000*
000_1101b1.3875010_1101b0.9875100_1101b0.5875110_1101b0.1875*
000_1110b1.3750010_1110b0.9750100_1110b0.5750110_1110b0.1750*
000_1111b1.3625010_1111b0.9625100_1111b0.5625110_1111b0.1625*
001_0000b1.3500011_0000b0.9500101_0000b0.5500111_0000b0.1500*
001_0001b1.3375011_0001b0.9375101_0001b0.5375111_0001b0.1375*
001_0010b1.3250011_0010b0.9250101_0010b0.5250111_0010b0.1250*
001_0011b1.3125011_0011b0.9125101_0011b0.5125111_0011b0.1125*
001_0100b1.3000011_0100b0.9000101_0100b0.5000111_0100b0.1000*
001_0101b1.2875011_0101b0.8875101_0101b0.4875*111_0101b0.0875*
001_0110b1.2750011_0110b0.8750101_0110b0.4750*111_0110b0.0750*
001_0111b1.2625011_0111b0.8625101_0111b0.4625*111_0111b0.0625*
001_1000b1.2500011_1000b0.8500101_1000b0.4500*111_1000b0.0500*
001_1001b1.2375011_1001b0.8375101_1001b0.4375*111_1001b0.0375*
001_1010b1.2250011_1010b0.8250101_1010b0.4250*111_1010b0.0250*
001_1011b1.2125011_1011b0.8125101_1011b0.4125*111_1011b0.0125*
001_1100b1.2000011_1100b0.8000101_1100b0.4000*111_1100bOFF
001_1101b1.1875011_1101b0.7875101_1101b0.3875*111_1101bOFF
001_1110b1.1750011_1110b0.7750101_1110b0.3750*111_1110bOFF
001_1111b1.1625011_1111b0.7625101_1111b0.3625*111_1111bOFF
NOTE: * Indicates a VID not required for AMD Family 10h processors.
17
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ISL6324A
POWER SAVINGS MODE: PSI_L
Bit 7 of the Serial VID code transmitted as part of the 8-bit
data phase over the SVI bus is allocated for the PSI_L. If
Bit 7 is 0, then the processor is at an optimal load for the
regulator to enter power savings mode. If Bit 7 is 1, then the
regulator should not be in power savings mode.
With the ISL6324A, Power Savings mode is realized through
phase shedding. Once a Serial VID command with Bit 7 set
to 0 is received, the ISL6324A will shed phases in a
sequential manner. The default number of phases that the
ISL6324A will run on in Power Savings Mode is two. This
number is programmable through the I
2
C interface and can
be set to three phases or to one phase (See “I2C Bus
Interface” on page 23). Phases are shed decrementally,
starting with Channel 4. When a phase is shed, that phase
will not go into a tri-state mode until that phase would have
had its PWM go HIGH.
After a phase is shed, the ISL6324A will wait, by default,
1 full PWM cycle before shedding the next phase. This delay
can be changed to 0, 2 or 4 PWM cycle delays through the
2
I
C interface (See “I2C Bus Interface” on page 23). It should
be noted that with a 0 cycle delay, all phases that are to be
shed will be turned off at the same time. While the option to
shed all phases at once is available, it is not recommended
as the Core voltage could be subjected to large output
deviations during the transition.
When leaving Power Savings Mode, through the reception of
a Serial VID command with Bit 7 set to 1, the ISL6324A will
sequentially turn on phases starting with the lowest
numbered phase that has been shed. When a phase is
being reactivated, it will not leave a tri-state until the PWM of
that phase goes HIGH.
After a phase is reactivated, the ISL6324A will wait, by
default, 1 full PWM cycle before reactivating the next phase.
This delay can be changed to 0, 2 or 4 PWM cycle delays
through the I
2
C interface (See “I2C Bus Interface” on
page 23). It should be noted that with a 0 cycle delay, all
phases that have been shed will be turned on at the same
time. While the option to reactivate all phases at once is
available, it is not recommended as the Core voltage could
be subjected to large output deviations during the transition.
If, while in Power Savings Mode, a Serial VID command is
received that forces a VID level change while maintaining
Bit 7 at 0, the ISL632A will first exit the Power Savings Mode
state as previously described. The output voltage will then
be stepped up or down to the appropriate VID level. Finally,
the ISL6324A will then re-enter Power Savings Mode.
If the Core regulator has had an offset voltage added to the
DAC through the I
remain while in Power Savings Mode. Through the I
2
C interface, this offset will, by default,
2
C
interface, the offset can be disabled while in Power Savings
Mode (See “I2C Bus Interface” on page 23).
Voltage Regulation
The integrating compensation network shown in Figure 8
insures that the steady-state error in the output voltage is
limited only to the error in the reference voltage,
remote-sense and error amplifiers. Intersil specifies the
guaranteed tolerance of the ISL6324A to include the
combined tolerances of each of these elements.
The output of the error amplifier , V
, is used by the
COMP
modulator to generate the PWM signals. The PWM signals
control the timing of the Internal MOSFET drivers and
regulate the converter output so that the voltage at FB is equal
to the voltage at REF. This will regulate the output voltage to
be equal to Equation 1 1. The i nternal and external circuitry
that controls voltage regulation is illustrated in Figure 8.
V
OUTVREFVDROOP
–=
(EQ. 11)
The ISL6324A incorporates differential remote-sense
amplification in the feedback path. The differential sensing
removes the voltage error encountered when measuring the
output voltage relative to the controller ground reference poi nt
resulting in a more accurate means of sensing output voltage.
EXTERNAL CIRCUITISL6324A INTERNAL CIRCUIT
FS
R
FS
COMP
C
C
R
C
FB
+
R
V
FB
DROOP
-
VSEN
+
V
OUT
-
FIGURE 8. OUTPUT VOLTAGE AND LOAD-LINE
REGULATION
RGND
DROOP
CONTROL
+
∑
+
-
+
TO
OSCILLATOR
I
AVG
ERROR
AMPLIFIER
VID
DAC
V
COMP
Load-Line (Droop) Regulation
By adding a well controlled output impedance, the output
voltage can effectively be level shifted in a direction which
works to achieve a cost-effective solution can help to reduce
the output-voltage spike that results from fast load-current
demand changes.
18
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ISL6324A
The magnitude of the spike is dictated by the ESR and ESL
of the output capacitors selected. By positioning the no-load
voltage level near the upper specification limit, a larger
negative spike can be sustained without crossing the lower
limit. By adding a well controlled output impedance, the
output voltage under load can effectively be level shifted
down so that a larger positive spike can be sustained without
crossing the upper specification limit.
As shown in Figure 8, with the FS resistor tied to ground, the
average current of all active channels, I
through a load-line regulation resistor R
voltage drop across R
is proportional to the output current,
FB
, flows from FB
AVG
. The resulting
FB
effectively creating an output voltage droop with a
steady-state value defined as in Equation 12:
V
DROOPIAVGRFB
⋅=
(EQ. 12)
The regulated output voltage is reduced by the droop voltage
V
. The output voltage as a function of load current is
DROOP
shown in Equation 13.
V
OUTVREF
–=
In Equation 13, V
⎛⎞
OUT
-------------
⋅⋅⋅⋅
⎜⎟
N
⎝⎠
is the reference voltage, I
REF
400
--------- -
3
---------------
⋅
R
1
SET
⎛⎞
DCR
⎝⎠
KR
OUT
FB
(EQ. 13)
is the
I
total output current of the converter, K is the DC gain of the
RC filter across the inductor (K is defined in Equation 7), N is
the number of active channels, and DCR is the Inductor
DCR value.
Dynamic VID
The AMD processor does not step the output voltage
commands up or down to the target voltage, but instead
passes only the target voltage to the ISL6324A through
either the PVI or SVI interface. The ISL6324A manages the
resulting VID-on-the-Fly transition in a controlled manner,
supervising a safe output voltage transition without
discontinuity or disruption. The ISL6324A begins slewing the
DAC at 3.25mV/µs until the DAC and target voltage are
equal. Thus, the total time required for a dynamic VID
transition is dependent only on the size of the DAC change.
To further improve dynamic VID performance, ISL6324A
also implements a proprietary DAC smoothing feature. The
external series RC components connected between DVC
and FB limit any stair-stepping of the output voltage during a
VID-on-the-Fly transition.
Compensating Dynamic VID Transitions
During a VID transition, the resulting change in voltage on
the FB pin and the COMP pin causes an AC current to flow
through the error amplifier compensation components from
the FB to the COMP pin. This current then flows through the
feedback resistor, R
overshoot or undershoot at the end of the VID transition. In
order to ensure the smooth transition of the output voltage
, and can cause the output voltage to
FB
I
= I
DVC
R
DVC
I
DVC
FB
R
DVC
VSEN
C
DVC
VDAC+RGND
FIGURE 9. DYNAMIC VID COMPENSATION NETWORK
C
I
C
R
C
FB
ISL6324A INTERNAL CIRCUIT
C
-
+
ERROR
AMPLIFIER
C
COMP
during a VID change, a VID-on-the-fly compensation
network is required. This network is composed of a resistor
and capacitor in series, R
DVC
and C
, between the DVC
DVC
and the FB pin.
This VID-on-the-fly compensation network works by
sourcing AC current into the FB node to offset the effects of
the AC current flowing from the FB to the COMP pin during a
VID transition. To create this compensation current the
ISL6324A sets the voltage on the DVC pin to be 2x the
voltage on the REF pin. Since the error amplifier forces the
voltage on the FB pin and the REF pin to be equal, the
resulting voltage across the series RC between DVC and FB
is equal to the REF pin voltage. The RC compensation
components, R
DVC
and C
, can then be selected to
DVC
create the desired amount of compensation current.
The amount of compensation current required is dependant
on the modulator gain of the system, K1, and the error
amplifier RC components, R
and CC, that are in series
C
between the FB and COMP pins. Use Equations 14, 15 and
16 to calculate the RC component values, R
DVC
and C
DVC
for the VID-on-the-fly compensation network. For these
equations: V
is the oscillator ramp amplitude (1.5V); and R
is the input voltage for the power train; V
IN
and CC are
C
P-P
the error amplifier RC components between the FB and
COMP pins.
K1
---------------- -
A
=
K1
R
RCOMP
C
RCOMP
K1 1–
=
V
IN
----------------
V
PP–
=
AR
×=
C
C
------- -
A
C
(EQ. 14)
(EQ. 15)
(EQ. 16)
Advanced Adaptive Zero Shoot-Through Deadtime
Control (Patent Pending)
The integrated drivers incorporate a unique adaptive deadtime
control technique to minimize deadtime, resulting in high
,
19
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ISL6324A
efficiency from the reduced freewheeling time of the lower
MOSFET body-diode conduction, and to prevent the upper and
lower MOSFETs from conducting simultaneously . This is
accomplished by ensuring either rising gate turns on its
MOSFET with minimum and sufficient delay after the other has
turned off.
During turn-off of the lower MOSFET, the PHASE voltage is
monitored until it reaches a -0.3V/+0.8V (forward/reverse
inductor current). At this time the UGA TE is released to rise. An
auto-zero comparator is used to correct the r
DS(ON)
drop in the
phase voltage preventing false detection of the -0.3V phase
level during r
DS(ON)
conduction period. In the case of zero
current, the UGA TE is released after 35ns delay of the LGATE
dropping below 0.5V. When LGATE first begins to transition
low, this quick transition can disturb the PHASE node and
cause a false trip, so there is 20ns of blanking time once
LGA TE falls until PHASE is monitored.
Once the PHASE is high, the advanced adaptive
shoot-through circuitry monitors the PHASE and UGATE
voltages during a PWM falling edge and the subsequent
UGATE turn-off. If either the UGATE falls to less than 1.75V
above the PHASE or the PHASE falls to less than +0.8V , the
LGATE is released to turn-on.
Initialization
Prior to initialization, proper conditions must exist on the EN,
VCC, PVCC1_2, PVCC_NB, ISEN3-, and ISEN4- pins. When
the conditions are met, the controller begins soft-start. Once
the output voltage is within the proper window of operation,
the controller asserts VDDPWRGD.
ISL6324A INTERNAL CIRCUIT
POR
CIRCUIT
SOFT-START
AND
FAULT LOGIC
FIGURE 10. POWER SEQUENCING USING THRESHOLD-
SENSITIVE ENABLE (EN) FUNCTION
ENABLE
COMPARATOR
+
-
0.86V
CHANNEL
DETECT
EXTERNAL CIRCUIT
VCC
PVCC1_2
PVCC_NB
+12V
10.7kΩ
EN
1.00kΩ
ISEN3-
ISEN4-
Power-On Reset
The ISL6324A requires VCC, PVCC1_2, and PVCC_NB
inputs to exceed their rising POR thresholds before the
ISL6324A has sufficient bias to guarantee proper operation.
The bias voltage applied to VCC must reach the internal
power-on reset (POR) rising threshold. Once this threshold
is reached, the ISL6324A has enough bias to begin checking
the driver POR inputs, EN, and channel detect portions of
the initialization cycle. Hysteresis between the rising and
falling thresholds assure the ISL6324A will not advertently
turn off unless the bias voltage drops substantially (see
“Electrical Specifications” on page 6).
The bias voltage applied to the PVCC1_2 and PVCC_NB
pins power the internal MOSFET drivers of each output
channel. In order for the ISL6324A to begin operation, both
PVCC inputs must exceed their POR rising threshold to
guarantee proper operation of the internal drivers.
Hysteresis between the rising and falling thresholds assure
that once enabled, the ISL6324A will not inadvertently turn
off unless the PVCC bias voltage drops substantially (see
“Electrical Specifications” on page 6). Depending on the
number of active CORE channels determined by the Phase
Detect block, the external driver POR checking is supported
by the Enable Comparator.
Enable Comparator
The ISL6324A features a dual function enable input (EN) for
enabling the controller and power sequencing between the
controller and external drivers or another voltage rail. The
enable comparator holds the ISL6324A in shutdown until the
voltage at EN rises above 0.86V . The enable comparator has
about 110mV of hysteresis to prevent bounce. It is important
that the driver ICs reach their rising POR level before the
ISL6324A becomes enabled. The schematic in Figure 10
demonstrates sequencing the ISL6324A with the ISL66xx
family of Intersil MOSFET drivers, which require 12V bias.
When selecting the value of the resistor divider the driver
maximum rising POR threshold should be used for
calculating the proper resistor values. This will prevent
improper sequencing events from creating false trips during
soft-start.
If the controller is configured for 2-phase CORE operation,
then the resistor divider can be used for sequencing the
controller with another voltage rail. The resistor divider to EN
should be selected using a similar approach as the previous
driver discussion.
The EN pin is also used to force the ISL6324A into either
PVI or SVI mode. The mode is set upon the rising edge of
the EN signal. When the voltage on the EN pin rises above
0.86V , the mode will be set depending upon the status of the
VID1/SEL pin.
20
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ISL6324A
Phase Detection
The ISEN3- and ISEN4- pins are monitored prior to soft-start
to determine the number of active CORE channel phases.
If ISEN4- is tied to VCC, the controller will configure the
channel firing order and timing for 3-phase operation. If
ISEN3- and ISEN4- are tied to VCC, the controller will set
the channel firing order and timing for 2-phase operation
(see “PWM Operation” on page 12 for details). If Channel 4
and/or Channel 3 are disabled, then the corresponding
PWMn and ISENn+ pins may be left unconnected
Soft-Start Output Voltage Targets
Once the POR and Phase Detect blocks and enable
comparator are satisfied, the controller will begin the
soft-start sequence and will ramp the CORE and NB output
voltages up to the SVI interface designated target level if the
controller is set SVI mode. If set to PVI mode, the North
Bridge regulator is disabled and the core is soft starte d to the
level designated by the parallel VID code.
SVI MODE
Prior to soft-starting both CORE and NB outputs, the
ISL6324A must check the state of the SVI interface inputs to
determine the correct target voltages for both outputs. When
the controller is enabled, the state of the VFIXEN, SVD and
SVC inputs are checked and the target output voltages set
for both CORE and NB outputs are set by the DAC (see
“Serial VID Interface (SVI)” on page 15). These targets will
only change if the EN signal is pulled low or after a POR
reset of VCC.
Soft-Start
The soft-start sequence is composed of three periods, as
shown in Figure 11. At the beginning of soft-start, the DAC
immediately obtains the output voltage targets for both
outputs by decoding the state of the SVI or PVI inputs. A
100µs fixed delay time, TDA, proceeds the output voltage
rise. After this delay period the ISL6324A will begin ramping
both CORE and NB output voltages to the programmed DAC
level at a fixed rate of 3.25mV/µs. The amount of time
required to ramp the output voltage to the final DAC voltage
is referred to as TDB, and can be calculated as shown in
Equation 17.
V
DAC
------------------------------
TDB
=
3.25 103–×
After the DAC voltage reaches the final VID setting,
VDDPWRGD will be set to high.
(EQ. 17)
.
V
NB
400mV/DIV
TDA
EN
5V/DIV
FIGURE 11. SOFT-START WAVEFORMS
TDB
VDDPWRGD
5V/DIV
100µs/DIV
V
CORE
400mV/DIV
Pre-Biased Soft-Start
The ISL6324A also has the ability to start up into a
pre-charged output, without causing any unnecessary
disturbance. The FB pin is monitored during soft-start, and
should it be higher than the equivalent internal ramping
reference voltage, the output drives hold both MOSFET s of f.
Once the internal ramping reference exceeds the FB pin
potential, the output drives are enabled, allowing the output to
ramp from the pre-charged level to the final level dictated by
the DAC setting. Should the output be pre-charged to a level
exceeding the DAC setting, the output drives are enabled at
the end of the soft-start period, leading to an abrupt correction
in the output voltage down to the DAC-set level.
Both CORE and NB output support start up into a
pre-charged output.
OUTPUT PRECHARGED
ABOVE DAC LEVEL
OUTPUT PRECHARGED
BELOW DAC LEVEL
V
CORE
400mV/DIV
EN
5V/DIV
100µs/DIV
FIGURE 12. SOFT-ST ART W A VEFORMS FOR
ISL6324A-BASED MULTI-PHASE CONVERTER
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ISL6324A
17.5µA
-
OCL
+
I
1
12.5µA
NB ONLY
DUPLICATED FOR
NB AND CORE
-
OCP
+
I
NB
SOFT-START, FAULT
AND CONTROL LOGIC
1.8V
+
REPEAT FOR EACH
OVP
CORE CHANNEL
-
OCP
+
CORE ONLY
12.5µA
I
AVG
-
DAC + 250mV
+
OV
-
VSEN
DAC - 300mV
FIGURE 13. POWER-GOOD AND PROTECTION CIRCUITRY
-
UV
+
ISL6324A INTERNAL CIRCUITRY
VDDPWRGD
Fault Monitoring and Protection
The ISL6324A actively monitors both CORE and NB output
voltages and currents to detect fault conditions. Fault
monitors trigger protective measures to prevent damage to
either load. One common power-good indi ca to r is provided
for linking to external system monitors. The schematic in
Figure 13 outlines the interaction between the fault monitors
and the power good signal.
Power-Good Signal
The power good pin (VDDPWRGD) is an open-drain logic
output that signals whether or not the ISL6324A is regulating
both NB and CORE output voltages within the proper levels,
and whether any fault conditions exist. This pin should be
tied to a +5V source through a resistor.
During shutdown and soft-start, VDDPWRGD pulls low and
releases high after a successful soft-start and both output
voltages are operating between the undervoltage and
overvoltage limits. VDDPWRGD transitions low when an
undervoltage, overvoltage, or overcurrent condition is
detected on either regulator output or when the controller is
disabled by a POR reset or EN. In the event of an
overvoltage or overcurrent condition, the controller latches
off and VDDPWRGD will not return high. Pending a POR
reset of the ISL6324A and successful soft-start, the
VDDPWRGD will return high.
Overvoltage Protection
The ISL6324A constantly monitors the sensed output voltage
on the VSEN pin to detect if an overvoltage event occurs.
When the output voltage rises above the OVP trip level and
exceeds the VDDPWRGD OV limit actions are taken by the
ISL6324A to protect the microprocessor load.
At the inception of an overvoltage event, both on-board
lower gate pins are commanded low as are the active PWM
outputs to the external drivers, the VDDPWRGD signal is
driven low, and the ISL6324A latches off normal PWM
action. This turns on the all of the lower MOSFETs and pulls
the output voltage below a level that might cause damage to
the load. The lower MOSFET s remain driven ON until VDIFF
falls below 400mV . The ISL6324A will continue to protect the
load in this fashion as long as the overvoltage condition
recurs. Once an overvoltage condition ends the ISL6324A
latches off, and must be reset by toggling POR, before a
soft-start can be re-initiated.
Pre-POR Overvoltage Protection
Prior to PVCC and VCC exceeding their POR levels, the
ISL6324A is designed to protect either load from any
overvoltage events that may occur. This is accomplished by
means of an internal 10kΩ resistor tied from PHASE to
LGATE, which turns on the lower MOSFET to control the
output voltage until the overvoltage event ceases or the input
power supply cuts off. For complete protection, the low side
MOSFET should have a gate threshold well below the
maximum voltage rating of the load/microprocessor.
In the event that during normal operation the PVCC or VCC
voltage falls back below the POR threshold, the pre-POR
overvoltage protection circuitry reactivates to protect from
any more pre-POR overvoltage events.
Undervoltage Detection
The undervoltage threshold is set at VDAC - 300mV typical.
When the output voltage (VSEN-RGND) is below the
undervoltage threshold, VDDPWRGD gets pulled low. No
other action is taken by the controller. VDDPWRGD will
return high if the output voltage rises above VDAC - 250mV
typical.
Open Sense Line Protection
In the case that either of the remote sense lines, VSEN or
GND, become open, the ISL6324A is designed to detect this
and shut down the controller. This event is detected by
monitoring small currents that are fed out the VSEN and
RGND pins. In the event of an open sense line fault, the
controller will continue to remain off until the fault goes away,
at which point the controller will re-initiate a soft-start
sequence.
Overcurrent Protection
The ISL6324A takes advantage of the proportionality
between the load current and the average current, I
detect an overcurrent condition. See “Continuous Current
AVG
, to
22
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ISL6324A
Sampling” on page 13 and “Channel-Current Balance” on
page 14 for more detail on how the average current is
measured. Once the average current exceeds 100µA, a
comparator triggers the converter to begin overcurrent
protection procedures. The Core regulator and the North
Bridge regulator have the same type of overcurrent
protection.
The overcurrent trip threshold is dictated by the DCR of the
inductors, the number of active channels, the DC gain of the
inductor RC filter and the R
resistor. The overcurrent trip
SET
threshold is shown in Equation 18.
I
OCP
100μ A
N
-------------
DCR
1
3
⎛⎞
--- -
--------- -
⋅
R
⎝⎠
K
400
SET
----------------------------------------
IN
2Lf
⋅
⋅⋅
OUT
S
V
OUT
--------------- -
⋅–⋅⋅⋅=
V
IN
(EQ. 18)
V
N–V
Where:
R
2
---------------------
K
=
R1R2+
fS = Switching Frequency
See “Continuous Current Sampling” on
page 13.
Equation 18 is valid for both the Core regulator and the
North Bridge regulator. This equation includes the DC load
current as well as the total ripple current contributed by all
the phases. For the North Bridge regulator, N is 1.
During soft-start, the overcurrent trip point is boosted by a
factor of 1.4. Instead of comparing the average measured
current to 100µA, the average current is compared to 140µA.
Immediately after soft-start is over, the comparison level
changes to 100µA. This is done to allow for start-up into an
active load while still supplying output capacitor in-rush
current.
CORE REGULATOR OVERCURRENT
At the beginning of overcurrent shutdown, the controller sets
all of the UGA TE an d LGATE signals low, puts PWM3 an d
PWM4 (if active) in a high-impedance state, and forces
VDDPWRGD low. This turns off all of the upper and lower
MOSFET s. The system remains in this st ate for fixed period of
12ms. If the controller is still enabled at the end of this wait
period, it will attempt a soft-start, as shown in Figure 14. If the
fault remains, the trip-retry cycles will continue until either the
fault is cleared or for a total of seven attempts. If the fault is
not cleared on the final attempt, the controller disables
UGA TE and LGATE signals for both Core and North Bridge
and latches off requiring a POR of VCC to reset the
ISL6324A.
It is important to note that during soft start, the overcurrent
trip point is increased by a factor of 1.4. If the fault draws
enough current to trip overcurrent during normal run mode, it
may not draw enough current during the soft-start ramp
period to trip overcurrent while the output is ramping up. If a
fault of this type is affecting the output, then the regulator will
complete soft-start and the trip-retry counter will be reset to
zero. Once the regulator has completed soft-start, the
overcurrent trip point will return to it’s nominal setting and an
overcurrent shutdown will be initiated. This will result in a
continuous hiccup mode.
Note that the energy delivered during trip-retry cycling is
much less than during full-load operation, so there is no
thermal hazard.
OUTPUT CURRENT, 50A/DIV
0A
OUTPUT VOLTAGE,
500mV/DIV
0V
FIGURE 14. OVERCURRENT BEHAVIOR IN HICCUP MODE
3ms/DIV
NORTH BRIDGE REGULATOR OVERCURRENT
The overcurrent shutdown sequence for the North Bridge
regulator is identical to the Core regulator with the exception
that it is a single phase regulator and will only disable the
MOSFET drivers for the North Bridge. Once 7 retry attempts
have been executed unsuccessfully , the controller w ill disable
UGA TE and LGATE signals for both Core and North Bridge
and will latch off requiring a POR of VCC to reset the
ISL6324A.
Note that the energy delivered during trip-retry cycling is
much less than during full-load operation, so there is no
thermal hazard.
Individual Channel Overcurrent Limiting
The ISL6324A has the ability to limit the current in each
individual channel of the Core regulator without shutting
down the entire regulator. This is accomplished by
continuously comparing the sensed currents of each channel
with a constant 140µA OCL reference current. If a channel’s
individual sensed current exceeds this OCL limit, the UGATE
signal of that channel is immediately forced low, and the
LGATE signal is forced high. This turns off the upper
MOSFET(s), turns on the lower MOSFET(s), and stops the
rise of current in that channel, forcing the current in the
channel to decrease. That channel’s UGATE signal will not
be able to return high until the sensed channel current falls
back below the 140µA reference.
I2C Bus Interface
The ISL6324A includes an I2C bus interface which allows for
user programmability of three of the controller’s operating
23
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ISL6324A
parameters and programmability of the Power Savings Mode
feature. The parameters that can be adjusted through the
2
I
C are:
SDA
1. Voltage Margining Offset: The DAC voltage can be
offset in 25mV increments.
2. VDDPWRGD Trip Level: The PGOOD trip level for either
the Core regulator or the North Bridge regulator can be
increased.
3. Overvoltage Trip Level: The OVP trip level of either the
Core or North Bridge regulator can be increased.
4. Power Savings Mode Options:
a. The number of phases to drop to in Power Savings
Mode can be programmed
b. The number of PWM cycles between dropping phases
while entering Power Savings Mode can be
programmed.
c. The number of PWM cycles between adding phases
when exiting Power Savings Mode can be
programmed.
d. Core Voltage Margining Offset can be Enabled or
Disabled while in Power Savings Mode.
To adjust these parameters, data transmission from the main
microprocessor to the ISL6324A and vice versa must take
place through the two wire I
2
the I
C bus consist of the SDA line, over which all data is sent,
2
C bus interface. The two wires of
and the SCL line, which is a clock signal used to synchronize
sending/receiving of the data.
Both SDA and SCL are bidirectional lines, externally connected
to a positive supply voltage via a pull-up resistor. Pull-up
resistor values should be chosen to limit the input current to
less then 3mA. When the bus is free, both lines are HIGH. The
output stages of ISL6324A have an open drain/open collector in
order to perform the wired-AND function. Data on the I
2
C bus
can be transferred up to 100Kbps in the standard-mode or up to
400Kbps in the fast-mode. The level of logic “0” and logic “1” is
dependent on associated value of V
as per electrical
DD
specification table. One clock pulse is generated for each data
bit transferred. The ISL6324A is a “SLAVE only” device, so the
SCL line must always be controlled by an external master.
It is important to note that the I
2
C interface of the ISL6324A
only works once the voltage on the VCC pin has risen above
the POR rising threshold. The I
2
C will continue to remain
active until the voltage on the VCC pin falls back below the
falling POR threshold level.
Data Validity
The data on the SDA line must be stable during the HIGH
period of the SCL, unless generating a START or STOP
condition. The HIGH or LOW state of the data line can only
change when the clock signal on the SCL line is LOW. Refer
to Figure 15.
SCL
DATA LINE
STABLE
DATA VALID
FIGURE 15. DATA VALIDITY
CHANGE
OF DATA
ALLOWED
START and STOP Conditions
Figure 16 shows a START (S) condition is a HIGH to LOW
transition of the SDA line while SCL is HIGH.
The STOP (P) condition is a LOW to HIGH transition on the
SDA line while SCL is HIGH. A STOP condition must be sent
before each START condition..
SDA
SCL
SP
START
CONDITION
FIGURE 16. START AND STOP WAVEFORMS
STOP
CONDITION
Byte Format
Every byte put on the SDA line must be eight bits long. The
number of bytes that can be transmitted per transfer is
unrestricted. Each byte has to be followed by an
acknowledge bit. Data is transferred with the most significant
bit first (MSB) and the least significant bit last (LSB).
Acknowledge
Each address and data transmission uses 9-clock pulses.
The ninth pulse is the acknowledge bit (A). After the start
condition, the master sends 7 slave address bits and a R/W
bit during the next 8-clock pulses. During the ninth clock
pulse, the device that recognizes its own address holds the
data line low to acknowledge. The acknowledge bit is also
used by both the master and the slave to acknowledge
receipt of register addresses and data as described in
Figure 17.
SCL
8
9
ACKNOWLEDGE
FROM SLAVE
SDA
START
1
MSB
FIGURE 17. ACKNOWLEDGE ON THE I2C BUS
2
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ISL6324A
ISL6324A I2C Slave Address
All devices on the I2C bus must have a 7-Bit I2C address in
order to be recognized. The address for the ISL6324A is
1000_110.
Communicating Over the I2C Bus
Two transactions are supported on the I2C interface:
1. Write register
2. Read register from current address.
All transactions start with a control byte sent from the I
2
C
master device. The control byte begins with a Start condition,
followed by 7-Bits of slave address. The last bit sent by the
master is the R/W bit and is 0 for a write or 1 for a read. If
any slaves on the I
2
C bus recognize their address, they will
Acknowledge by pulling the serial data line low for the last
clock cycle in the control byte. If no slaves exist at that
address or are not ready to communicate, the data line will
be 1, indicating a Not Acknowledge condition.
Once the control byte is sent, and the ISL6324A
acknowledges it, the 2nd byte sent by the master must be a
register address byte. This register address byte tells the
ISL6324A which one of the internal registers it wants to write
to or read from. The address of the first internal register ,
RGS1, is 0000_0000. This register sets the North Bridge
Offset, Overvoltage trip point and Power-good trip level. The
address of the second internal register , R GS2, is 000 0_0001.
This register sets the Core Offset, Overvoltage trip point an d
Power-good trip level. The address of the third register,
RGS3, is 0000_0010. The third register is for programming of
the Power Savings Mode features. Once the ISL6324A
receives a correct register address byte, it responds with an
acknowledge.
TABLE 5. I2C REGISTER FUNCTIONS
REGISTER ADDRESSFUNCTION
RGS10000_0000 North Bridge DAC Offset, OVP, PGOOD
RGS20000_0001 Core DAC Offset, OVP, PGOOD
RGS30000_0010 Power Savings Mode Functionality
Writing to the Internal Registers
In order to change any of the three operating parameters via
2
the I
C bus, the internal registers must be written to. The two
registers inside the ISL6324A can be written individually with
two separate write transactions or sequentially with one write
transaction by sending two data bytes. See “Reading from
the Internal Registers” on page 25.
To write to a single register in the ISL6324A, the master
sends a control byte with the R/W bit set to 0, indicating a
write. If it receives an Acknowledge from the ISL6324A, it
sends a register address byte representing the internal
register it wants to write to (0000_0000 for RGS1,
0000_0001 for RGS2 or 0000_0010 for RGS3). The
ISL6324A will respond with an Acknowledge. The master
then sends a byte representing the data byte to be written
into the desired register. The ISL6324A will respond with an
Acknowledge. The master then issues a Stop condition,
indicating to the ISL6324A that the current transaction is
complete. Once this transaction completes, the ISL6324A
will immediately update and change the operating
parameters on-the-fly.
It is also possible to write to the all the registers sequentially.
To do this the master must write to register RGS1first. This
transaction begins with the master sending a control byte
with the R/W bit set to 0. If it receives an Acknowledge from
the ISL6324A, it sends the register address byte 0000_0000,
representing the internal register RGS1. The ISL6324A will
respond with an Acknowledge. After sending the data byte to
RGS1 and receiving an Acknowledge from the ISL6324A,
instead of sending a Stop condition, the master sends the
data byte to be stored in register RGS2. After the ISL6324A
responds with another Acknowledge, the master can either
send a Stop condition to indicate that the current transaction
is complete, or it can send the data byte to be stored in
register RGS3. If register RGS3 is written to, the ISL6324A
will respond with an Acknowledge and the master would
send a Stop condition, completing the transaction. Once this
transaction completes the ISL6324A will immediately update
and change the operating parameters on-the-fly.
Reading from the Internal Registers
The ISL6324A has the ability to read from both registers
separately or read from them consecutively. Prior to reading
from an internal register, the master must first select the
desired register by writing to it and sending the register’s
address byte. This process begins by the master sending a
control byte with the R/W bit set to 0, indicating a write. Once
it receives an Acknowledge from the ISL6324A, it sends a
register address byte representing the internal register it
wants to read from (0000_0000 for RGS1, 0000_0001 for
RGS2 or 0000_0010 for RGS3). The ISL6324A will respond
with an Acknowledge. The master must then respond with a
Stop condition. After the Stop condition, the master follows
with a new Start condition, and then sends a new control
byte with the R/W bit set to 1, indicating a read. Th e
ISL6324A will then respond by sending the master an
Acknowledge, followed by the data byte stored in that
register. The master must then send a Not Acknowledge
followed by a Stop command, which will complete the read
transaction.
It is also possible for all registers to be read consecutively.
To do this the master must read from register RGS1 first.
This transaction begins with the master sending a control
byte with the R/W bit set to 0. If it receives an Acknowledge
from the ISL6324A, it sends the register address byte
0000_0000, representing the internal register RGS1. The
ISL6324A will respond with an Acknowledge. The master
must then respond with a Stop condition. After the Stop
condition the master follows with a new Start condition, and
25
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March 23, 2009
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ISL6324A
then sends a new control byte with the R/W bit set to 1,
indicating a read. The ISL6324A will then respond by
sending the master an Acknowledge, followed by the data
byte stored in register RGS1. The master must then send an
POR rising threshold level, these registers can be changed
at any time via the I
pin falls below the POR falling threshold, the internal
registers are automatically reset to their initial states.
Acknowledge, and after doing so, the ISL6324A will respond
by sending the data byte stored in register RGS2. The
master must then send another Acknowledge, which the
ISL6324A will respond to by sending the data byte stored in
register RGS3. The master must then send a Not
Acknowledge followed by a Stop command, which will
complete the read transaction.
Resetting the Internal Registers
The ISL6324A’s internal I2C registers always initialize to the
states shown in Table 6 when the controller first receives
power. Once the voltage on the VCC pin rises above the
It is possible to reset the internal registers without powering
down the controller and without requiring the controller to
stop regulating and soft-start again. Simply write the initial
states to the internal registers over th e I
I2C Read and Write Protocol
WRITE TO A SINGLE REGISTER
S 1000_1100 A 0000_0000 A RGS1_DATAPA
WRITE TO ALL REGISTERS
S 1000_1100 A 0000_0000 A RGS1_DATAPRGS1_DATARGS1_DATAAAA
S 1000_1100 A REG_ADDRP S 1000_1101AA RGS1_DATA NP
READ FROM ALL REGISTERS
S 1000_1100
DRIVEN BY MASTER
DRIVEN BY ISL6324A
A 0000_0000PS 1000_1101AA RGS1_DATA A RGS2_DATA A RGS3_DATA NP
S = START CONDITION
P = STOP CONDITION
A = ACKNOWLEDGE
N = NO ACKNOWLEDGE
26
FN6880.0
March 23, 2009
Page 27
ISL6324A
Register Bit Definitions
The bits for RGS1 and RGS2 are utilized in the same
manner by the ISL6324A (see T able 5). Bit-7 enables the
overvoltage protection trip point to be increased. Bit-6
enables the Power-good trip point to be increased. These
bits will be interpreted by the ISL6324A according to T able 7.
Bits 5 through 0 determine the amount of offset for the
particular regulator. See Table 8 for the bit codes and the
corresponding offset voltages from the nominal DAC.
TABLE 7. BIT [7] AND [6] of REGISTER RGS1 AND RGS2
The bits for Register RGS3 control some of the functionality
of the ISL6324A for Power Savings Mode. Bits 0 and 1
control the number of phases that the ISL6324A will drop to
when in Power Savings Mode. Bits 2 and 3 control the
number of PWM cycles between adding of phases when
exiting Power Savings Mode. Bits 4 and 5 control the
number of PWM cycles between dropping of phases when
entering Power Savings Mode. Bit 6 will disable/enable the
Core DAC offset when in Power Savings Mode. Bit 7 is
reserved. See Table 9 for a complete description of register
RGS3 bits and their functiona li t y.
TABLE 9. BITS [7:0] REGISTER RGS3
Bit 7Reserved
Bit 6Core DAC Offset
0ENABLED
1DISABLED
Bits [5:4] Number of PWM Cycles Between Dropping Phases
001 PWM Cycle (default)
012 PWM Cycles
104 PWM Cycles
110 PWM Cycles (All Phases Drop at Once)
Bits [3:2] N umber of PWM Cycles Between Adding Phases
Bits [1:0] Number of Phases Active in Power Savings Mode
001 Phase
012 Phases (Default)
1X3 Phases
General Design Guide
This design guide is intended to provide a high-level
explanation of the steps necessary to create a multi-phase
power converter. It is assumed that the reader is familiar with
many of the basic skills and techniques referenced in the
following sections. In addition to this guide, Intersil provides
complete reference designs that include schematics, bills of
materials, and example board layouts for all common
microprocessor applications.
Power Stages
The first step in designing a multi-phase converter is to
determine the number of phases. This determination depends
heavily on the cost analysis which in turn depends on system
constraints that differ from one design to the next. Principally,
the designer will be concerned with whether components ca n
be mounted on both sides of the circuit board, whether
through-hole components are permitted, the total board space
available for power-supply circuitry , and the maximum amount
of load current. Generally speaking, the most economical
solutions are those in which each phase handles between
25A and 30A. All surface-mount designs will tend toward the
lower end of this current range. If through-hole MOSFETs and
inductors can be used, higher per-phase currents are
possible. In cases where board space is the limiting
constraint, current can be pushed as high as 40A per phase,
but these designs require heat sinks and forced air to cool the
MOSFETs, inductors and heat dissipating surfaces.
MOSFETS
The choice of MOSFETs depends on the current each
MOSFET will be required to conduct, the switching frequency ,
the capability of the MOSFETs to dissipate heat, and the
availability and nature of heat sinking and air flow .
LOWER MOSFET POWER CALCULATION
The calculation for power loss in the lower MOSFET is
simple, since virtually all of the loss in the lower MOSFET is
due to current conducted through the channel resistance
(r
output current, I
Equation 20), and d is the duty cycle (V
P
). In Equation 19, IM is the maximum continuous
DS(ON)
LOW 1,
r
DS ON()
is the peak-to-peak inductor current (see
P-P
OUT/VIN
2
⎛⎞
I
M
⎜⎟
----- N
⎝⎠
I
LP P–()
----------------------------------------------+⋅=
1d–()⋅
12
).
2
1d–()⋅
(EQ. 19)
An additional term can be added to the lower-MOSFET loss
equation to account for additional loss accrued during the
dead time when inductor current is flowing through the
lower-MOSFET body diode. This term is dependent on the
diode forward voltage at I
frequency, f
, and the length of dead times, td1 and td2, at
S
, V
M
, the switching
D(ON)
the beginning and the end of the lower-MOSFET conduction
interval respectively .
P
LOW 2,
V
DON()fS
⎛⎞
I
I
M
⋅⋅=
PP–
⎜⎟
------
---------------+
⎝⎠
N
2
⎛⎞
I
I
⎜⎟
M
td1⋅
PP+
----------------
------
–
⎜⎟
2
N
⎝⎠
td2⋅+
(EQ. 20)
The total maximum power dissipated in each lower MOSFET
is approximated by the summation of P
LOW,1
and P
LOW,2
.
UPPER MOSFET POWER CALCULATION
In addition to r
losses, a large portion of the upper
DS(ON)
MOSFET losses are due to currents conducted across the
input voltage (V
) during switching. Since a substantially
IN
higher portion of the upper-MOSFET losses are dependent on
switching frequency , the power cal culation is more complex.
28
FN6880.0
March 23, 2009
Page 29
ISL6324A
Upper MOSFET losses can be divided into separate
components involving the upper-MOSFET switching times,
the lower-MOSFET body-diode reverse recovery charge, Q
and the upper MOSFET r
DS(ON)
conduction loss.
rr
When the upper MOSFET turns off, the lower MOSFET does
not conduct any portion of the inductor current until the
voltage at the phase node falls below ground. Once the
lower MOSFET begins conducting, the current in the upper
MOSFET falls to zero as the current in the lower MOSFET
ramps up to assume the full inductor current. In Equation 21,
the required time for this commutation is t
approximated associated power loss is P
t
⎛⎞
I
P
UP 1()VIN
I
M
PP–
⎛⎞
⋅⋅⋅≈
----- -
------------- -+
⎝⎠
N
2
1
----
⎜⎟
2
⎝⎠
f
S
and the
1
UP(1)
.
(EQ. 21)
At turn-on, the upper MOSFET begins to conduct and this
transition occurs over a time t
approximate power loss is P
I
⎛⎞
I
PP–
M
P
UP 2()VIN
⋅⋅⋅≈
------------- -
⎜⎟
–
----- 2
N
⎝⎠
. In Equation 22, the
2
.
UP(2)
t
⎛⎞
2
f
----
⎜⎟
S
2
⎝⎠
(EQ. 22)
A third component involves the lower MOSFET
reverse-recovery charge, Qrr. Since the inductor current has
fully commutated to the upper MOSFET before the
lower-MOSFET body diode can recover all of Q
, it is
rr
conducted through the upper MOSFET across VIN. The
power dissipated as a result is P
UP(3)
as shown in
Equation 23.
P
UP 3()VINQrrfS
⋅⋅=
(EQ. 23)
Finally, the resistive part of the upper MOSFET is given in
Equation 24 as P
P
UP 4()rDS ON()
UP(4)
⎛⎞
I
⎜⎟
----- -
⎝⎠
.
2
M
d⋅
N
+⋅≈
I
PP–
------------- 12
2
(EQ. 24)
The total power dissipated by the upper MOSFET at full load
can now be approximated as the summa ti on of the resu l ts
from Equations 21, 22, 23 and 24. Since the power
equations depend on MOSFET parameters, choosing the
correct MOSFETs can be an iterative process in volving
repetitive solutions to the loss equations for different
MOSFETs and different switching frequencies.
Internal Bootstrap Device
All three integrated drivers feature an internal bootstrap
Schottky diode. Simply adding an external capacitor across
the BOOT and PHASE pins completes the bootstrap circuit.
The bootstrap function is also designed to prevent the
bootstrap capacitor from overcharging due to the large
negative swing at the PHASE node. This reduces voltage
stress on the boot to phase pins.
The bootstrap capacitor must have a maximum voltage
rating above PVCC + 4V and its capacitance value can be
,
chosen from Equation 25:
Q
GATE
C
BOOT_CAP
Q
GATE
where Q
at V
GS1
--------------------------------------
≥
ΔV
BOOT_CAP
QG1PVCC•
----------------------------------- -
V
GS1
is the amount of gate charge per upper MOSFET
G1
•=
N
gate-source voltage and NQ1 is the number of
control MOSFETs. The ΔV
Q1
BOOT_CAP
(EQ. 25)
term is defined as the
allowable droop in the rail of the upper gate drive.
1.6
1.4
1.2
(µF)
1.0
0.8
BOOT_CAP
0.6
C
0.4
0.2
20nC
0.0
FIGURE 18. BOOTSTRAP CAPACIT ANCE vs BOOT RIPPLE
Q
50nC
VOLTAGE
= 100nC
GATE
0.30.0 0.1 0.20.4 0.5 0.60.90.7 0.81.0
ΔV
BOOT_CAP
(V)
Gate Drive Voltage Versatility
The ISL6324A provides the user flexibility in choosing the
gate drive voltage for efficiency optimization. The controller
ties the upper and lower drive rails together. Simply applying
a voltage from 5V up to 12V on PVCC sets both gate drive
rail voltages simultaneously.
Package Power Dissipation
When choosing MOSFETs it is important to consider the
amount of power being dissipated in the integrated drivers
located in the controller. Since there are a total of three
drivers in the controller package, the total power dissipated
by all three drivers must be less than the maximum
allowable power dissipation for the QFN package.
Calculating the power dissipation in the drivers for a desired
application is critical to ensure safe operation. Exceeding the
maximum allowable power dissipation level will push the IC
beyond the maximum recommended operating junction
temperature of +125°C. The maximum allowable IC power
dissipation for the 7x7 QFN package is approximately 3.5W
at room temperature. See “There are two sets of critical
components in a DC/DC converter using a ISL6324A controller.
The power components are the most critical because they
switch large amounts of energy . Next are small signal
29
FN6880.0
March 23, 2009
Page 30
ISL6324A
components that connect to sensitive nodes or supply critical
bypassing current and signal coupling.” on page 36 for thermal
transfer improvement suggestions.
When designing the ISL6324A into an application, it is
recommended that the following calculations is used to
ensure safe operation at the desired frequency for the
selected MOSFETs. The total gate drive power losses,
P
Qg_TOT
, due to the gate charge of MOSFETs and the
integrated driver’s internal circuitry and their corresponding
average driver current can be estimated with Equations 26
and 27, respectively.
P
Qg_TOTPQg_Q1PQg_Q2IQ
3
P
Qg_Q1
P
Qg_Q2QG2
I
DR
-- -
2
3
⎛⎞
-- -
⋅QG2NQ2⋅+
Q
G1
⎝⎠
2
In Equations 26 and 27, P
power loss and P
loss; the gate charge (Q
PVCC fSWNQ1N
⋅⋅ ⋅⋅⋅=
Q
G1
PVCC fSWNQ2N
⋅⋅⋅⋅=
N⋅
Q1
Qg_Q1
is the total lower gate drive power
Qg_Q2
and QG2) is defined at the
G1
VCC⋅++=
PHASE
PHASE
N
PHASEfSWIQ
+⋅⋅=
(EQ. 26)
(EQ. 27)
is the total upper gate drive
particular gate to source drive voltage PVC C in the
corresponding MOSFET data sheet; I
quiescent current with no load at both drive outputs; N
N
are the number of upper and lower MOSFETs per phase,
Q2
respectively; N
I
*VCC product is the quiescent power of the controller
Q
is the number of active phases. The
PHASE
is the driver total
Q
Q1
and
without capacitive load and is typically 75mW at 300kHz.
PVCC
FIGURE 19. TYPICAL UPPER-GATE DRIVE TURN-ON PATH
PVCC
FIGURE 20. TYPICAL LOWER-GATE DRIVE TURN-ON PATH
BOOT
PHASE
R
HI2
R
LO2
D
C
GD
R
HI1
R
LO1
UGATE
LGATE
G
R
GI1R
G1
C
GS
S
C
GD
G
R
GI2
R
G2
C
GS
S
C
DS
Q1
D
C
DS
Q2
The total gate drive power losses are dissipated among the
resistive components along the transition path and in the
bootstrap diode. The portion of the total power dissipated in
the controller itself is the power dissipated in the upper drive
path resistance (P
(P
) and in the boot strap diode (P
DR_UP
) the lower drive path resistance
DR_UP
BOOT
). The rest of
the power will be dissipated by the external gate resistors
(R
and RG2) and the internal gate resistors (R
G1
R
) of the MOSFETs. Figures 19 and 20 show the typical
GI2
GI1
and
upper and lower gate drives turn-on transition path. The total
power dissipation in the controller itself, P
, can be roughly
DR
estimated as Equation 28:
P
DRPDR_UPPDR_LOW PBOOTIQ
P
Qg_Q1
P
BOOT
P
DR_UP
P
DR_LOW
R
EXT1RG1
---------------------
=
3
R
⎛⎞
HI1
--------------------------------------
⎜⎟
R
+
⎝⎠
HI1REXT1
R
⎛⎞
HI2
--------------------------------------
⎜⎟
R
+
⎝⎠
HI2REXT2
R
GI1
-------------
+=
N
Q1
R
LO1
----------------------------------------
+
R
+
LO1REXT1
R
LO2
----------------------------------------
+
R
+
LO2REXT2
R
EXT2RG2
VCC⋅()+++=
P
Qg_Q1
---------------------
⋅=
3
P
Qg_Q2
---------------------
⋅=
R
GI2
-------------
+=
N
Q2
(EQ. 28)
2
Inductor DCR Current Sensing Component
Selection and R
With the single R
effective internal sense resistors for both the North Bridge
and Core regulators, it is important to set the R
and the inductor RC filter gain, K, properly. See “Continuous
Current Sampling” on page 13 and “Channel-Current
Balance” on page 14 for more details on the application of
the R
There are 3 separate cases to consider when calculating
these component values. If the system under design will
never utilize the North Bridge regulator and the ISL6323 will
always be in parallel mode, then follow the instructions for
Case 3 and only calculate values for Core regulator
components.
For all three cases, use the expected VID voltage that would
be used at TDC for Core and North Bridge for the V
and VNB variables, respectively.
CASE 1
I
NB
In Case 1, the DC voltage across the North Bridge inductor
at full load is less than the DC voltage across a single phase
of the Core regulator while at full load. Here, the DC voltage
across the Core inductors must be scaled down to match the
DC voltage across the North Bridge inductor, which will be
impressed across the ISEN_NB pins without any gain. Thus,
resistor and the RC filter gain.
SET
DCR
⋅
MAX
NB
Value Calculation
SET
resistor setting the value of the
SET
I
Core
MAX
--------------------------
⋅<
DCR
N
Core
SET
value
CORE
(EQ. 29)
30
FN6880.0
March 23, 2009
Page 31
ISL6324A
the R2 resistor for the North Bridge inductor RC filter is left
unpopulated and K = 1.
3. Choose a capacitor value for the North Bridge RC filter. A
0.1µF capacitor is a recommended starting point.
4. Calculate the value for resistor R
L
NB
1
NB
--------------------------------------
=
DCRNBCNB⋅
R
5. Calculate the value for the R
using Equation 30:
1
resistor using
SET
(EQ. 30)
Equation 31: (Derived from Equation 18).
R
SET
Where:
400
--------- -
3
K = 1
DCR
NB
------------------------------
⋅⋅=
100μ A
K⋅
⎛⎞
I
⎜⎟
OCP
⎝⎠
NB
VINVNB–
---------------------------- -
2L
⋅⋅
NBfS
⋅+
V
NB
-----------
V
IN
(EQ. 31)
6. Using Equation 32 (also derived from Equation 18),
calculate the value of K for the Core regulator.
7. Choose a capacitor value for the Core RC filters. A 0.1µF
capacitor is a recommended starting point.
8. Calculate the values for R
and R2 for Core.
1
Equations 33 and 34 will allow for their computation.
R
2
----------------------------------------------
=
K
R
1
Core
L
Core
--------------------------
DCR
Core
Core
R
+
2
Core
R
----------------------------------------------
R
1
Core
1
Core
R
⋅
2
Core
R
+
2
Core
⋅=
C
Core
(EQ. 33)
(EQ. 34)
CASE 2
I
Core
I
NB
MAX
DCR
⋅
NB
MAX
--------------------------
N
⋅>
DCR
Core
(EQ. 35)
In Case 2, the DC voltage across the North Bridge inductor
at full load is greater than the DC voltage across a single
phase of the Core regulator while at full load. Here, the DC
voltage across the North Bridge inductor must be scaled
down to match the DC voltage across the Core inductors,
which will be impressed across the ISEN pins without any
gain. So, the R
resistor for the Core inductor RC filters is
2
left unpopulated and K = 1.
1. Choose a capacitor value for the Core RC filter. A 0.1µF
capacitor is a recommended starting point.
2. Calculate the value for resistor R
L
Core
Core
=
------------------------------------------------
DCR
⋅
CoreCCore
R
1
:
1
(EQ. 36)
CORE
V
IN
3. Calculate the value for the R
resistor using
SET
Equation 37:(Derived from Equation 18).
R
SET
Where:
400
--------- -
3
K = 1
⋅⋅=
DCR
CORE
-------------------------------------- -
100μ A
K⋅
⎛⎞
I
⎜⎟
OCP
CORE
⎝⎠
VINV
–
-------------------------------------
⋅⋅
2L
COREfS
CORE
V
CORE
--------------------
⋅+
V
(EQ. 37)
4. Using Equation 38 (also derived from Equation 18),
calculate the value of K for the North bridge regulator.
5. Choose a capacitor value for the North Bridge RC filter. A
0.1µF capacitor is a recommended starting point.
6. Calculate the values for R
and R2 for North Bridge.
1
Equations 39 and 40 will allow for their computation.
R
2
------------------------------------ -
K
=
R
L
NB
---------------------
DCR
NB
NB
R
+
1
NB
R
------------------------------------ -
R
2
NB
R
⋅
1
2
NB
NB
⋅=
C
R
+
1
NB
NB
2
NB
(EQ. 39)
(EQ. 40)
CASE 3
I
Core
I
NB
MAX
DCR
⋅
NB
MAX
--------------------------
N
⋅=
DCR
Core
(EQ. 41)
In Case 3, the DC voltage across the North Bridge inductor
at full load is equal to the DC voltage across a single phase
of the Core regulator while at full load. Here, the full scale
DC inductor voltages for both North Bridge and Core will be
impressed across the ISEN pins without any gain. So, the R
resistors for the Core and North Bridge inductor RC filters
are left unpopulated and K = 1 for both regulators.
For this Case, it is recommended that the overcurrent trip
point for the North Bridge regulator be equal to the
overcurrent trip point for the Core regulator divided by the
number of core phases.
1. Choose a capacitor value for the North Bridge RC filter. A
0.1µF capacitor is a recommended starting point.
2. Calculate the value for the North Bridge resistor R
L
NB
--------------------------------------
=
R
1
DCRNBCNB⋅
NB
:
1
(EQ. 42)
3. Choose a capacitor value for the Core RC filter. A 0.1µF
capacitor is a recommended starting point.
4. Calculate the value for the Core resistor R
L
Core
------------------------------------------------
1
Core
=
DCR
⋅
CoreCCore
R
:
1
(EQ. 43)
IN
2
31
FN6880.0
March 23, 2009
Page 32
ISL6324A
5. Calculate the value for the R
R
SET
Where:
400
--------- -
3
K = 1
DCR
-------------------------------------- -
⋅⋅=
100μ A
CORE
K⋅
resistor using Equation 44:
SET
CORE
V
CORE
--------------------
⋅+
V
VINV
⎛⎞
I
⎜⎟
OCP
CORE
⎝⎠
–
-------------------------------------
⋅⋅
2L
COREfS
(EQ. 44)
6. Calculate the OCP trip point for the North Bridge
regulator using Equation 45. If the OCP trip point is higher
than desired, then the component values must be
recalculated utilizing Case 1. If the OCP trip point is lower
than desired, then the component values must be
recalculated utilizing Case 2.
I
OCP
NB
100μ A
---------------------
DCR
NOTE: The values of R
–
SET
V
INVNB
---------------------------- -
⋅⋅
2L
NBfS
1
3
⎛⎞
--------- -
⋅
R
⎝⎠
400
NB
must be greater than 20kΩ and
SET
V
NB
-----------
⋅+⋅⋅=
V
IN
(EQ. 45)
less than 80kΩ. For all of the 3 cases, if the calculated value
of R
is less than 20kΩ, then either the OCP trip point
SET
needs to be increased or the inductor must be changed to an
inductor with higher DCR. If the R
80kΩ, then a value of R
that is less than 80kΩ must be
SET
resistor is greater than
SET
chosen and a resistor divider across both North Bridge and
Core inductors must be set up with proper gain. This gain
will represent the variable “K” in all equations. It is also very
important that the R
resistor be tied between the RSET
SET
pin and the VCC pin of the ISL6323.
Inductor DCR Current Sensing Component Fine
Tuning
IN
Due to errors in the inductance and/or DCR it may be
necessary to adjust the value of R
and R2 to match the time
1
constants correctly. The effects of time constant mismatch
can be seen in the form of droop overshoot or undershoot
during the initial load transient spike, as shown in Figure 22.
Follow the steps below to ensure the RC and inductor
L/DCR time constants are matched accurately.
1. If the regulator is not utilizing droop, modify the circuit by
placing the frequency set resistor between FS and
Ground for the duration of this procedure.
2. Capture a transient event with the oscilloscope set to
about L/DCR/2 (sec/div). For example, with L = 1µH and
DCR = 1mΩ, set the oscilloscope to 500µs/div.
3. Record ΔV1 and ΔV2 as shown in Figure 22. Select new
values, R
resistors based on the original values, R
R
R
1NEW()R1OLD()
R
21()NEW()
using Equations 46 and 47.
2(OLD)
4. Replace R
and R
1(NEW)
V
Δ
1
--------- -
⋅=
V
Δ
2
V
Δ
--------- -
R
and R2 with the new values and check to see
1
⋅=
2OLD()
Δ
V
) for the time constant
2(NEW
1
2
1(OLD)
and
(EQ. 46)
(EQ. 47)
that the error is corrected. Repeat the procedure if
necessary.
I
L
L
INDUCTOR
VL(s)
+
R
1
ISENn-
-
ISENn+
VCC
RSET
UGATE(n)
MOSFET
DRIVER
ISL6323 INTERNAL CIRCUIT
SAMPLE
LGATE(n)
In
+
-
I
SEN
V
IN
+
VC(s)
R
ISEN
FIGURE 21. DC R SENSING CONFIGURATION
n
VC(s)
+
DCR
-
C
R
2
ΔV
ΔV
V
OUT
C
OUT
-
1
2
V
OUT
I
TRAN
ΔI
FIGURE 22. TIME CONSTANT MISMATCH BEHAVIOR
Loadline Regulation Resistor
The loadline regulation resistor, labeled RFB in Figure 8,
sets the desired loadline required for the application.
Equation 48 can be used to calculate R
If no loadline regulation is required, FS resistor should be
tied between the FS pin and VCC. To choose the value for
FB
.
(EQ. 48)
32
FN6880.0
March 23, 2009
Page 33
ISL6324A
RFB in this situation, please refer to “Compensation Without
Loadline Regulation” on page 33.
Compensation With Loadline Regulation
The load-line regulated converter behaves in a similar
manner to a peak current mode controller because the two
poles at the output filter L-C resonant frequency split with the
introduction of current information into the control loop. The
final location of these poles is determined by the system
function, the gain of the current signal, and the value of the
compensation components, R
C2 (OPTIONAL)
R
C
R
FB
FIGURE 23. COMPENSATION CONFIGURA TION FOR
LOAD-LINE REGULATED ISL6324A CIRCUIT
Since the system poles and zero are affected by the values
of the components that are meant to compensate them, the
solution to the system equation becomes fairly complicated.
Fortunately, there is a simple approximation that comes very
close to an optimal solution. Treating the system as though it
were a voltage-mode regulator, by compensating the L-C
poles and the ESR zero of the voltage mode approximation,
yields a solution that is always stable with very close to ideal
transient performance.
Select a target bandwidth for the compensated system, f
The target bandwidth must be large enough to assure
adequate transient performance, but smaller than 1/3 of the
per-channel switching frequency. The values of the
compensation components depend on the relationships of f
to the L-C pole frequency and the ESR zero frequency. For
each of the following three, there is a separate set of
equations for the compensation components.
In Equation 49, L is the per-channel filter inductance divided
by the number of active channels; C is the sum total of all
output capacitors; ESR is the equivalent series resistance of
the bulk output filter capacitance; and V
peak-to-peak sawtooth signal amplitude as described in the
“Electrical Specifications” table on page 6.
Once selected, the compensation values in Equation 49
assure a stable converter with reasonable transient
performance. In most cases, transient performance can be
improved by making adjustments to R
C
C
and CC.
C
COMP
VSEN
FB
ISL6324A
is the
P-P
. Slowly increase the
C
.
0
value of R
while observing the transient performance on an
C
oscilloscope until no further improvement is noted. Normally,
C
will not need adjustment. Keep the value of CC from
C
Equation 49 unless some performance issue is noted.
The optional capacitor C
, is sometimes needed to bypass
2
noise away from the PWM comparator (see Figure 23). Keep
a position available for C
, and be prepared to install a high
2
frequency capacitor of between 22pF and 150pF in case any
leading edge jitter problem is noted.
------------------------------------->
2 π C ESR⋅⋅ ⋅
2
f
V
0
P-PRFB
1
2 π f0V
----------------------------------------------
⋅=
0.66 V
0.66 VINESRC⋅⋅ ⋅
----------------------------------------------------------------- -=
2 π V
P-PRFBf0
LC⋅⋅⋅ ⋅⋅
P-P
⋅
IN
1
2
2
f
LC⋅⋅⋅
0
⋅
IN
LC⋅⋅⋅ ⋅ ⋅
L⋅⋅ ⋅⋅
P-P
ESR⋅⋅
IN
L⋅⋅⋅ ⋅ ⋅
(EQ. 49)
Compensation Without Loadline Regulation
The non load-line regulated converter is accurately modeled
as a voltage-mode regulator with two poles at the L-C
resonant frequency and a zero at the ESR frequency. A
type-III controller, as shown in Figure 24, provides the
necessary compensation.
0
The first step is to choose the desired bandwidth, f
compensated system. Choose a frequency high enough to
assure adequate transient performance but not higher than 1/3
of the switching frequency. The type-III compensator has an
extra high-frequency pole, f
. This pole can be used for added
HF
noise rejection or to assure adequate attenuation at the error
amplifier high-order pole and zero frequencies. A good general
rule is to choose f
Choosing f
HF
=10f0, but it can be higher if desired.
HF
to be lower than 10f0 can cause problems with
too much phase shift below the system bandwidth as shown in
Equation 50.
In the solutions to the compensation equations, there is a
single degree of freedom. For the solutions presented in
Equation 51, R
is selected arbitrarily. The remaining
FB
compensation components are then selected according to
Equation 51.
In Equation 51, L is the per-channel filter inductance divided
by the number of active channels; C is the sum total of all
output capacitors; ESR is the equivalent-series resistance of
the bulk output-filter capacitance; and V
peak sawtooth signal amplitude as described in “Electrical
Specifications” on page 6.
----------------------------------------------------------------- -=
2 π V
1
-------------------------------------<≤
2 π C ESR⋅⋅ ⋅
2
2
2 π⋅()⋅
0.66 V
f
0
⋅
IN
0.66 VIN⋅
2
V
P-PRFB
2 π f0V
----------------------------------------------
0.66 V
P-PRFBf0
IN
P-P
ESR⋅⋅
LC⋅⋅⋅
LC⋅⋅⋅ ⋅ ⋅
L⋅⋅ ⋅⋅
L⋅⋅⋅ ⋅ ⋅
(EQ. 51)
The output inductors and the output capacitor bank together
to form a low-pass filter responsible for smoothing the
pulsating voltage at the phase nodes. The output filter also
must provide the transient energy until the regulator can
respond. Because it has a low bandwidth compared to the
switching frequency, the output filter limits the system
transient response. The output capacitors must supply or
sink load current while the current in the output inductors
increases or decreases to meet the demand.
In high-speed converters, the output capacitor bank is usually
the most costly (and often the largest) p art of the circuit.
Output filter design begins with minimizing the cost of this part
of the circuit. The critical load parameters in choosing the
output capacitors are the maximum size of the load step, ΔI,
the load-current slew rate, di/dt, and the maximum allowable
output-voltage deviation under transient loading, ΔV
MAX
.
Capacitors are characterized according to their capacitance ,
ESR, and ESL (equivalent series inductance).
At the beginning of the load transient, the output capacitors
supply all of the transient current. The output voltage will
initially deviate by an amount approximated by the voltage
drop across the ESL. As the load current increases, the
voltage drop across the ESR increases linearly until the load
current reaches its final value. The capacitors selected must
have sufficiently low ESL and ESR so that the total output
voltage deviation is less than the allowable maximum.
Neglecting the contribution of inductor current and regulator
response, the output voltage initially deviates by an amount
as shown in Equation 52:
ΔVESL
di
-----
⋅ESR ΔI⋅+≈
dt
(EQ. 52)
The filter capacitor must have sufficiently low ESL and ESR
so that ΔV < ΔV
MAX
.
Most capacitor solutions rely on a mixture of high frequency
capacitors with relatively low capacitance in combination
with bulk capacitors having high capacitance but limited
high-frequency performance. Minimizing the ESL of the
34
FN6880.0
March 23, 2009
Page 35
ISL6324A
high-frequency capacitors allows them to support the output
voltage as the current increases. Minimizing the ESR of the
bulk capacitors allows them to supply the increased current
with less output voltage deviation.
The ESR of the bulk capacitors also creates the majority of
the output-voltage ripple. As the bulk capacitors sink and
source the inductor AC ripple current (see “Interleaving” on
page 11 and Equation 3), a voltage develops across the bulk
capacitor ESR equal to I
capacitors are selected, the maximum allowable ripple
voltage, V
Since the capacitors are supplying a decreasing portion of
the load current while the regulator recovers from the
transient, the capacitor voltage becomes slightly depleted.
The output inductors must be capable of assuming the entire
load current before the output voltage decreases more than
ΔV
. This places an upper limit on inductance.
MAX
Equation 54 gives the upper limit on L for the cases when
the trailing edge of the current transient causes a greater
output-voltage deviation than the leading edge. Equation 55
addresses the leading edge. Normally, the trailing edge
dictates the selection of L because duty cycles are usually
less than 50%. Nevertheless, both inequalities should be
evaluated, and L should be selected based on the lower of
the two results. In each equation, L is the per-channel
inductance, C is the total output capacitance, and N is the
number of active channels.
2NCV
⋅⋅⋅
---------------------------------
L
1.25
-----------------------------
L
()
ΔI
NC⋅⋅
2
()
ΔI
O
ΔV
2
MAX
⋅⋅≤
ΔV
MAX
Switching Frequency
There are a number of variables to consider when choosing the
switching frequency, as there are considerable effects on the
upper MOSFET loss calculation. These effects are outlined in
“MOSFETs” on page 28, and they establish the upper limit for
the switching frequency. The lower limit is established by the
requirement for fast transient response and small outputvoltage ripple as outlined in “Output Filter Design” on page 34.
Choose the lowest switching frequency that allows the
regulator to meet the transient-response requirements.
Switching frequency is determined by the selection of the
frequency-setting resistor, R
are provided to assist in selecting the correct value for R
(ESR). Thus, once the output
C(P-P)
V
⋅
OUT
ΔIESR⋅()–⋅≤
ΔI ESR⋅()–VINVO–
. Figure 25 and Equation 56
T
⎛⎞
⎝⎠
(EQ. 53)
(EQ. 54)
(EQ. 55)
.
T
RT10
=
(kΩ)
R
10.611.035fS()log⋅()–
1k
100
T
10
10k100k1M10M
SWITCHING FREQUENCY (Hz)
FIGURE 25. R
vs SWITCHING FREQUENCY
T
(EQ. 56)
[]
Input Capacitor Selection
The input capacitors are responsible for sourcing the AC
component of the input current flowing into the upper
MOSFETs. Their RMS current capacity must be sufficient to
handle the AC component of the current drawn by the upper
MOSFETs which is related to duty cycle and the number of
active phases.
0.3
I
= 0
L(P-P)
I
)
O
I
RMS/
0.2
0.1
INPUT-CAPACITOR CURRENT (I
FIGURE 26. NORMALIZED INPUT-CAP ACITOR RMS CURRENT
= 0.25 I
L(P-P)
0
00.41.00.20.60.8
O
vs DUTY CYCLE FOR 4-PHASE CONVERTER
For a 4-phase design, use Figure 26 to determine the
input-capacitor RMS current requirement set by the duty
cycle, maximum sustained output current (I
of the peak-to-peak inductor current (I
bulk capacitor with a ripple current rating which will minimize
the total number of input capacitors required to support the
RMS current calculated.
The voltage rating of the capacitors should also be at least
1.25x greater than the maximum input voltage. Figures 27
and 28 provide the same input RMS current information for
I
L(P-P)
I
L(P-P)
DUTY CYCLE (V
= 0.5 I
= 0.75 I
O/VIN
L(P-P)
O
O
)
), and the ratio
O
) to IO. Select a
35
FN6880.0
March 23, 2009
Page 36
ISL6324A
3-phase and two-phase designs respectively. Use the same
approach for selecting the bulk capacitor type and number.
Low capacitance, high-frequency ceramic cap acitors are
needed in addition to the input bulk capacitors to suppress
leading and falling edge voltage spikes. The spikes result from
the high current slew rate produced by the upper MOSFET
turn on and off. Select low ESL ceramic capacitors and place
one as close as possible to each upper MOSFET drain to
minimize board parasitics and maximize suppression.
Layout Considerations
MOSFET s switch very fast and efficiently . The speed with which
the current transitions from one device to another causes
voltage spikes across the interconnecting impedances and
parasitic circuit elements. These voltage spikes can degrade
efficiency , radiate noise into the circuit and lead to device
overvoltage stress. Careful component selection, layout, and
placement minimizes these voltage spikes. Consider, as an
example, the turnoff transition of the upper PWM MOSFET.
Prior to turnoff, the upper MOSFET was carrying channel
current. During the turn-off, current stops flowing in th e upper
MOSFET and is picked up by the lower MOSFET . Any
inductance in the switched current path generates a large
voltage spike during the switching interval. Careful component
selection, tight layout of the critical components, and short, wide
circuit traces minimize the magnitude of voltage spikes.
0.3
I
)
O
I
RMS/
0.2
I
L(P-P)
= 0.25 I
O
= 0
L(P-P)
I
L(P-P)
I
L(P-P)
= 0.5 I
= 0.75 I
O
O
0.3
)
O
I
RMS/
0.2
0.1
I
= 0
L(P-P)
I
= 0.5 I
L(P-P)
I
L(P-P)
INPUT-CAPACITOR CURRENT (I
0
00.41.00.20.60.8
= 0.75 I
O
O
DUTY CYCLE (V
IN/VO
)
FIGURE 28. NORMALIZED INPUT-CAPACITOR RMS
CURRENT FOR 2-PHASE CONVERTER
There are two sets of critical components in a DC/DC converter
using a ISL6324A controller. The power components are the
most critical because they switch large amounts of energy. Next
are small signal components that connect to sensitive nodes or
supply critical bypassing current and signal coupling.
The power components should be placed first, which include
the MOSFET s, input and output capacitors, and the inductors. It
is important to have a symmetrical layout for each power train,
preferably with the controller located equidistant from each.
Symmetrical layout allows heat to be dissipated equally
across all power trains. Equidistant placement of the controller
to the CORE and NB power trains it controls through the
integrated drivers helps keep the gate drive traces equally
short, resulting in equal trace impedances and similar drive
capability of all sets of MOSFETs.
0.1
INPUT-CAPACITOR CURRENT (I
0
00.41.00.20.60.8
DUTY CYCLE (V
IN/VO
)
FIGURE 27. NORMALIZED INPUT-CAPACIT OR RMS
CURRENT FOR 3-PHASE CONVERTER
36
When placing the MOSFETs try to keep the source of the upper
FETs and the drain of the lower FETs as close as thermally
possible. Input high-frequency capacitors, C
, should be
HF
placed close to the drain of the upper FET s and the source of
the lower FETs. Input bulk capacitors, CBULK, case size
typically limits following the same rule as the high-frequency
input capacitors. Place the input bulk capacitors as close to the
drain of the upper FETs as possible and minimize the distance
to the source of the lower FETs.
Locate the output inductors and output capacitors between the
MOSFET s and the load. The high-frequency output decoupling
capacitors (ceramic) should be placed as close as practicable
to the decoupling target, making use of the shortest connection
paths to any internal planes, such as vias to GND next or on the
capacitor solder pad.
FN6880.0
March 23, 2009
Page 37
ISL6324A
The critical small components include the bypass capacitors
(C
) for VCC and PVCC, and many of the components
FILTER
surrounding the controller including the feedback network and
current sense components. Locate the VCC/PVCC bypass
capacitors as close to the ISL6324A as possible. It is especially
important to locate the components associated with the
feedback circuit close to their respective controller pins, since
they belong to a high-impedance circuit loop, sensitive to EMI
pick-up.
A multi-layer printed circuit board is recommended. Figure 28
shows the connections of the critical components for the
converter. Note that capacitors C
and C
IN
could each
OUT
represent numerous physical capacitors. Dedicate one solid
layer, usually the one underneath the component side of the
board, for a ground plane and make all critical component
ground connections with vias to this layer. Dedicate another
solid layer as a power plane and break this plane into smaller
islands of common voltage levels. Keep the metal runs from the
PHASE terminal to output inductors short. The power plane
should support the input power and output power nodes. Use
copper filled polygons on the top and bottom circuit layers for
the phase nodes. Use the remaining printed circuit layers for
small signal wiring.
Routing UGATE, LGATE, and PHASE Traces
Great attention should be paid to routing the UGATE, LGATE,
and PHASE traces since they drive the power train MOSFETs
using short, high current pulses. It is important to size them as
large and as short as possible to reduce their overall
impedance and inductance. They should be sized to carry at
least one ampere of current (0.02” t o 0 . 0 5 ” ) . G o i n g b e t w e e n
layers with vias should also be avoided, but if so, use two vias
for interconnection when possible.
The sense traces that connect the R-C sense components to
each side of the output inductors should be routed on the
bottom of the board, away from the noisy switching
components located on the top of the board. These traces
should be routed side by side, and they should be very thin
traces. It’s important to route these traces as far away from
any other noisy traces or planes as possible. These traces
should pick up as little noise as possible.
Thermal Management
For maximum thermal performance in high current, high
switching frequency applications, connecting the thermal GND
pad of the ISL6324A to the ground plane with multiple vias is
recommended. This heat spreading allows the part to achieve
its full thermal potential. It is also recommended that the
controller be placed in a direct path of airflow if possible to help
thermally manage the part.
Extra care should be given to the LGATE traces in particular
since keeping their impedance and inductance low help s to
significantly reduce the possibility of shoot-through. It is also
important to route each channels UGATE and PHASE traces
in as close proximity as possible to reduce their inductances.
Current Sense Component Placement and Trace
Routing
One of the most critical aspects of the ISL6324A regulator
layout is the placement of the inductor DCR current sense
components and traces. The R-C current sense components
must be placed as close to their respective ISEN+ and
ISEN- pins on the ISL6324A as possible.
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implicat ion or oth erwise u nde r any p a tent or p at ent r ights of Intersil or its subsidiari es.
For information regarding Intersil Corporation and its products, see www.intersil.com
37
FN6880.0
March 23, 2009
Page 38
ISL6324A
R
FB
C
2
R
C
C
C
COMP
ISEN3+
ISEN3-
FB
VSEN
C
BOOT
BOOT1
UGATE1
+12V
R
C
IN
3_2
C
3
PWM3
R
APA
C
APA
APA
DVC
PHASE1
LGATE1
ISEN1-
ISEN1+
R
1_1
C
1
R
1_2
+12V
R
2_1
V_CORE
C
IN
C
IN
C
C
BULK
HF
CPU
C
LOAD
2
R
2_2
C
4
R
4_2
+5V
C
FILTER
PVCC1_2
VCC
BOOT2
FS
R
FS
UGATE2
C
FILTER
C
BOOT
PHASE2
R
SET
LGATE2
ISEN2-
ISEN2+
RGND
NC
NC
RSET
VFIXEN
SEL
SVD
SVC
VID4
VID5
PWROK
VDDPWRGD
GND
SCL
SDA
+12V
OFF
ON
R
R
EN1
EN2
ISL6324A
EN
ISEN4+
ISEN4-
PWM4
PVCC_NB
BOOT_NB
C
FILTER
C
BOOT_NB
+12V
C
IN
UGATE_NB
+12V
C
BOOT
C
IN
R
3_1
BOOT1
UGATE1
PHASE1
LGATE1
PWM1
PGND
ISL6614
+12V
BOOT2
C
BOOT
UGATE2
PHASE2
R
4_1
LGATE2
KEY
HEAVY TRACE ON CIRCUIT PLANE LAYER
ISLAND ON POWER PLANE LAYER
ISLAND ON CIRCUIT PLANE LAYER
VIA CONNECTION TO GROUND PLANE
VCC
PVCC
GND
PWM2
+12V
C
FILTER
C
HF
NB
LOAD
V_NB
RED COMPONENTS:
LOCATE CLOSE TO IC TO
MINIMIZE CONNECTION PATH
BLUE COMPONENTS:
LOCATE NEAR LOAD
(MINIMIZE CONNECTION PATH)
MAGENTA COMPONENTS:
LOCATE CLOSE TO SWITCHING TRANSISTORS
(MINIMIZE CONNECTION PATH)
PHASE_NB
C
BULK
C
1_NB
R
2_NB
LGATE_NB
R
1_NB
ISEN_NB-
COMP_NB
ISEN_NB+
FB_NB
R
C_NB
C
C_NB
2_NB
C
R
FB_NB
FIGURE 29. PRINTED CIRCUIT BOARD POWER PLANES AND ISLANDS
38
FN6880.0
March 23, 2009
Page 39
Package Outline Drawing
L48.7x7
48 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE
Rev 4, 10/06
7.00
6
PIN 1
INDEX AREA
ISL6324A
A
B
36
37
4X
44X
5.5
0.50
48
6
PIN #1 INDEX AREA
1
(4X)0.15
( 6 . 80 TYP )
( 4 . 30 )
TOP VIEW
TYPICAL RECOMMENDED LAND PATTERN
7.00
0 . 90 ± 0 . 1
( 44X 0 . 5 )
( 48X 0 . 23 )
( 48X 0 . 60 )
25
24
48X 0 . 40± 0 . 1
BOTTOM VIEW
SIDE VIEW
0 . 2 REF
C
DETAIL "X"
0 . 00 MIN.
0 . 05 MAX.
12
13
4
BASE PLANE
5
4. 30 ± 0 . 15
M0.10C AB
0.23 +0.07 / -0.05
SEE DETAIL "X"
C
C
0.10
SEATING PLANE
C0.08
39
NOTES:
Dimensions are in millimeters.1.
Dimensions in ( ) for Reference Only.
2.
Dimensioning and tolerancing conform to AMSE Y14.5m-1994.