High-Efficiency, Quad-Output, Main Power
Supply Controllers for Notebook
Computers
The ISL6236 dual step-down, switch-mode power-supply
(SMPS) controller generates logic-supply voltages in
battery-powered systems. The ISL6236 include two
pulse-width modulation (PWM) controllers, 5V/3.3V and
1.5V/1.05V. The output of SMPS1 can also be adjusted from
0.7V to 5.5V. The SMPS2 output can be adjusted from 0V to
2.5V by setting REFIN2 voltage. An optional external charge
pump can be monitored through SECFB. This device features
a linear regulator providing 3.3V/5V, or adjustable from 0.7V to
4.5V output via LDOREFIN. The linear regulator provides up
to 100mA output current with automatic linear-regulator
bootstrapping to the BYP input. When in switchover, the LDO
output can source up to 200mA. The ISL6236 includes
on-board power-up sequencing, the power-good (POK)
outputs, digital soft-start, and internal soft-stop output
discharge that prevents negative voltages on shutdown.
A constant ON-time PWM control scheme operates without
sense resistors and provides 100ns response to load
transients while maintaining a relatively constant switching
frequency. The unique ultrasonic pulse-skipping mode
maintains the switching frequency above 25kHz, which
eliminates noise in audio applications. Other features include
pulse skipping, which maximizes efficiency in light-load
applications, and fixed-frequency PWM mode, which reduces
RF interference in sensitive applications.
Ordering Information
PART
NUMBER
(Note)
ISL6236IRZAISL6236 IRZ -40 to +100 32 Ld 5x5 QFN L32.5x5B
ISL6236IRZA-T* ISL6236 IRZ -40 to +100 32 Ld 5x5 QFN
*Please refer to TB347 for details on reel specifications.
NOTES:
1. These Intersil Pb-free plastic packaged products employ special
Pb-free material sets, molding compounds/die attach materials,
and 100% matte tin plate plus anneal (e3 termination finish, which
is RoHS compliant and compatible with both SnPb and Pb-free
soldering operations). Intersil Pb-free products are MSL classified
at Pb-free peak reflow temperatures that meet or exceed the Pbfree requirements of IPC/JEDEC J STD-020.
2. For Moisture Sensitivity Level (MSL), please see device
information page for ISL6236
MSL please see techbrief TB363
PART
MARKING
TEMP.
RANGE
(°C)
PACKAGE
(Pb-Free)
(Tape and
Reel)
. For more information on
.
PKG.
DWG. #
L32.5x5B
FN6373.6
Features
• Wide Input Voltage Range 5.5V to 25V
• Dual Fixed 1.05V/3.3V and 1.5V/5.0V Outputs or
Adjustable 0.7V to 5.5V (SMPS1) and 0V to 2.5V
(SMPS2), ±1.5% Accuracy
LDO Current (Switched Over to OUT1) Continuous . . . . . . +200mA
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
NOTES:
is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
3. θ
JA
Tech Brief TB379.
4. For θ
Electrical SpecificationsNo load on LDO, OUT1, OUT2, V
, the “case temp” location is the center of the exposed metal pad on the package underside.
LGATE Gate-Driver ON-ResistanceLGATE, high state (pull-up) (Note 5)2.25.0Ω
LGATE, low state (pull-down) (Note 5)0.61.5Ω
Dead TimeLGATE Rising152035ns
UGATE Rising203050ns
OUT1, OUT2 Discharge ON-Resistance2540Ω
NOTES:
5. Limits established by characterization and are not production tested.
6. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization
and are not production tested.
7. Does not apply in PFM mode (see further details on page 26).
6
FN6373.6
April 29, 2010
Page 7
ISL6236
Pin Descriptions
PIN
NUMBERNAMEFUNCTION
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
REF2V Reference Output. Bypass to GND with a 0.1µF (min) capacitor. REF can source up to 50µA for external loads.
Loading REF degrades FB and output accuracy according to the REF load-regulation error.
TONFrequency Select Input. Connect to GND for 400kHz/500kHz operation. Connect to REF (or leave OPEN) for
400kHz/300kHz operation. Connect to VCC for 200kHz/300kHz operation (5V/3.3V SMPS switching frequencies,
respectively.)
VCCAnalog Supply Voltage Input for PWM Core.Bypass to GND with a 1µF ceramic capacitor.
EN LDOLDO Enable Input. The LDO is enabled if EN LDO is within logic high level and disabled if EN LDO is less than the logic
low level.
VREF33.3V Reference Output. VREF3 can source up to 5mA for external loads. Bypass to GND with a 0.01µF capacitor if
loaded. Leave open if there is no load.
VINPower-Supply Input. VIN is used for the constant-on-time PWM on-time one-shot circuits. VIN is also used to power the
linear regulators. The linear regulators are powered by SMPS1 if OUT1 is set greater than 4.78V and BYP is tied to
OUT1. Connect VIN to the battery input and bypass with a 1µF capacitor.
LDOLinear-Regulator Output. LDO can provide a total of 100mA external loads. The LDO regulate at 5V If LDOREFIN is
connected to GND. When the LDO is set at 5V and BYP is within 5V switchover threshold, the internal regulator shuts
down and the LDO output pin connects to BYP through a 0.7Ω switch. The LDO regulate at 3.3V if LDOREFIN is
connected to VCC. When the LDO is set at 3.3V and BYP is within 3.3V switchover threshold, the internal regulator
shuts down and the LDO output pin connects to BYP through a 1.5Ω switch. Bypass LDO output with a minimum of
4.7µF ceramic.
LDOREFIN LDO Reference Input. Connect LDOREFIN to GND for fixed 5V operation. Connect LDOREFIN to VCC for fixed 3.3V
operation. LDOREFIN can be used to program LDO output voltage from 0.7V to 4.5V. LDO output is two times the
voltage of LDOREFIN. There is no switchover in adjustable mode.
BYPBYP is the switchover source voltage for the LDO when LDOREFIN connected to GND or VCC. Connect BYP to 5V if
LDOREFIN is tied to GND. Connect BYP to 3.3V if LDOREFIN is tied to VCC.
OUT1SMPS1 Output Voltage-Sense Input. Connect to the SMPS1 output. OUT1 is an input to the Constant on-time-PWM
on-time one-shot circuit. It also serves as the SMPS1 feedback input in fixed-voltage mode.
FB1SMPS1 Feedback Input. Connect FB1 to GND for fixed 5V operation. Connect FB1 to VCC for fixed 1.5V operation
Connect FB1 to a resistive voltage-divider from OUT1 to GND to adjust the output from 0.7V to 5.5V.
ILIM1SMPS1 Current-Limit Adjustment. The GND-PHASE1 current-limit threshold is 1/10th the voltage seen at ILIM1 over a
0.2V to 2V range. There is an internal 5µA current source from VCC to ILIM1. Connect ILIM1 to REF for a fixed 200mV
threshold. The logic current limit threshold is default to 100mV value if ILIM1 is higher than VCC - 1V.
POK1SMPS1 Power-Good Open-Drain Output. POK1 is low when the SMPS1 output voltage is more than 10% below the
normal regulation point or during soft-start. POK1 is high impedance when the output is in regulation and the soft-start
circuit has terminated. POK1 is low in shutdown.
EN1SMPS1 Enable Input. The SMPS1 is enabled if EN1 is greater than the logic high level and disabled if EN1 is less than
the logic low level. If EN1 is connected to REF, the SMPS1 starts after the SMPS2 reaches regulation (delay start). Drive
EN1 below 0.8V to clear fault level and reset the fault latches.
UGATE1 High-Side MOSFET Floating Gate-Driver Output for SMPS1. UGATE1 swings between PHASE1 and BOOT1.
PHASE1Inductor Connection for SMPS1. PHASE1 is the internal lower supply rail for the UGATE1 high-side gate driver.
PHASE1 is the current-sense input for the SMPS1.
BOOT1Boost Flying Capacitor Connection for SMPS1. Connect to an external capacitor according to the typical application
circuits (Figures 66, 67 and 68). See “MOSFET Gate Drivers (UGATE, LGATE)” on page 27.
LGATE1SMPS1 Synchronous-Rectifier Gate-Drive Output. LGATE1 swings between GND and PVCC.
PVCCPVCC is the supply voltage for the low-side MOSFET driver LGATE. Connect a 5V power source to the PVCC pin and
bypass with a 1µF MLCC ceramic capacitor. Refer to Figure 69 - A switch connects PVCC to VCC with 10Ω when in
normal operation and is disconnected when in shutdown mode. An external 10Ω resistor from PVCC to VCC is
prohibited as it will create a leakage path from VIN to GND in shutdown mode.
SECFBThe SECFB is used to monitor the optional external 14V charge pump. Connect a resistive voltage-divider from 14V
charge pump output to GND to detect the output. If SECFB drops below the threshold voltage, LGATE1 turns on for
300ns. This will refresh the external charge pump driven by LGATE1 without over-discharging the output voltage.
7
FN6373.6
April 29, 2010
Page 8
0
ISL6236
Pin Descriptions (Continued)
PIN
NUMBERNAMEFUNCTION
21
22
23
24
25
26
27
28
29
30
31
32
GNDAnalog Ground for both SMPS and LDO. Connect externally to the underside of the exposed pad.
PGNDPower Ground for SMPS controller. Connect PGND externally to the underside of the exposed pad.
LGATE2SMPS2 Synchronous-Rectifier Gate-Drive Output. LGATE2 swings between GND and PVCC.
BOOT2Boost Flying Capacitor Connection for SMPS2. Connect to an external capacitor according to the typical application
circuits (Figures 66, 67 and 68). See “MOSFET Gate Drivers (UGATE, LGATE)” on page 27.
PHASE2Inductor Connection for SMPS2. PHASE2 is the internal lower supply rail for the UGATE2 high-side gate driver.
PHASE2 is the current-sense input for the SMPS2.
UGATE2 High-Side MOSFET Floating Gate-Driver Output for SMPS2. UGATE1 swings between PHASE2 and BOOT2.
EN2SMPS2 Enable Input. The SMPS2 is enabled if EN2 is greater than the logic high level and disabled if EN2 is less than
the logic low level. If EN2 is connected to REF, the SMPS2 starts after the SMPS1 reaches regulation (delay start). Drive
EN2 below 0.8V to clear fault level and reset the fault latches.
POK2SMP2 Power-Good Open-Drain Output. POK2 is low when the SMPS2 output voltage is more than 10% below the
normal regulation point or during soft-start. POK2 is high impedance when the output is in regulation and the soft-start
circuit has terminated. POK2 is low in shutdown.
SKIP
Low-Noise Mode Control. Connect SKIP to GND for normal Idle-Mode (pulse-skipping) operation or to VCC for PWM
mode (fixed frequency). Connect to REF or leave floating for ultrasonic skip mode operation.
OUT2SMPS2 Output Voltage-Sense Input. Connect to the SMPS2 output. OUT2 is an input to the Constant on-time-PWM
on-time one-shot circuit. It also serves as the SMPS2 feedback input in fixed-voltage mode.
ILIM2SMPS2 Current-Limit Adjustment. The GND-PHASE1 current-limit threshold is 1/10th the voltage seen at ILIM2 over a
0.2V to 2V range. There is an internal 5µA current source from VCC to ILIM2. Connect ILIM2 to REF for a fixed 200mV.
The logic current limit threshold is default to 100mV value if ILIM2 is higher than VCC - 1V.
REFIN2Output voltage control for SMPS2. Connect REFIN2 to VCC for fixed 3.3V. Connect REFIN2 to VREF3 for fixed 1.05V.
REFIN2 can be used to program SMPS2 output voltage from 0.5V to 2.50V. SMPS2 output voltage is 0V if
REFIN2 <0.5V.
Typical Performance CurvesCircuit of Figures 66, 67 and 68, no load on LDO, OUT1, OUT2, V
Typical Performance CurvesCircuit of Figures 66, 67 and 68, no load on LDO, OUT1, OUT2, V
1.518
1.516
1.514
1.512
1.510
1.508
OUTPUT VOLTAGE (V)
1.506
1.504
5 7 9 1113151719212325
FIGURE 15. V
3.340
3.335
3.330
3.325
3.320
OUTPUT VOLTAGE (V)
3.315
3.310
791113151719212325
FIGURE 17. V
NO LOAD PWM
MID LOAD PWM
MAX LOAD PWM
INPUT VOLTAGE (V)
= 1.5V OUTPUT VOLTAGE REGULATION
OUT1
vs V
(PWM MODE)
IN
NO LOAD PWM
MID LOAD PWM
MAX LOAD PWM
INPUT VOLTAGE (V)
= 3.3V OUTPUT VOLTAGE REGULATION
OUT2
vs V
(PWM MODE)
IN
EN2 = EN1 = VCC, V
otherwise noted. Typical values are at T
= 5V, PVCC = 5V, V
BYP
1.530
1.525
1.520
1.515
1.510
OUTPUT VOLTAGE (V)
1.505
1.500
FIGURE 16. V
OUTPUT VOLTAGE (V)
FIGURE 18. V
=5V, TA= -40°C to +100°C, unless
EN LDO
= +25°C. (Continued)
A
MID LOAD PWM
57911 13151719212325
OUT1
vs V
3.38
3.37
3.36
3.35
3.34
3.33
3.32
3.31
3.30
791113151719212325
OUT2
vs V
INPUT VOLTAGE (V)
= 1.5V OUTPUT VOLTAGE REGULATION
(SKIP MODE)
IN
MAX LOAD PWM
INPUT VOLTAGE (V)
= 3.3V OUTPUT VOLTAGE REGULATION
(SKIP MODE)
IN
, and REF, VIN= 12V,
REF3
NO LOAD PWM
MAX LOAD PWM
NO LOAD PWM
MID LOAD PWM
5.065
5.060
5.055
5.050
OUTPUT VOLTAGE (V)
5.045
5.040
791113151719212325
FIGURE 19. V
NO LOAD PWM
MAX LOAD PWM
MID LOAD PWM
INPUT VOLTAGE (V)
= 5V OUTPUT VOLTAGE REGULATION vs
OUT1
V
(PWM MODE)
IN
11
5.14
5.12
5.10
5.08
5.06
OUTPUT VOLTAGE (V)
5.04
5.02
791113151719212325
FIGURE 20. V
NO LOAD PWM
MID LOAD PWM
MAX LOAD PWM
INPUT VOLTAGE (V)
= 5V OUTPUT VOLTAGE REGULATION vs
OUT1
V
(SKIP MODE)
IN
FN6373.6
April 29, 2010
Page 12
300
0
50
ISL6236
Typical Performance CurvesCircuit of Figures 66, 67 and 68, no load on LDO, OUT1, OUT2, V
EN2 = EN1 = VCC, V
otherwise noted. Typical values are at T
250
200
150
100
FREQUENCY (kHz)
50
250
200
150
100
FREQUENCY (kHz)
50
0
ULTRA-SKIP
0
0.0010.0100.1001.00010.00
OUTPUT LOAD (A)
FIGURE 21. V
ULTRA-SKIP
SKIP
0.0010.0100.1001.00010.000
FIGURE 23. V
= 1.05V FREQUENCY vs LOADFIGURE 22. V
OUT2
PWM
OUTPUT LOAD (A)
= 1.5V FREQUENCY vs LOADFIGURE 24. V
OUT1
PWM
SKIP
= 5V, PVCC = 5V, V
BYP
45
40
35
30
25
20
RIPPLE (mV)
15
10
50
45
40
35
30
25
20
RIPPLE (mV)
15
10
=5V, TA= -40°C to +100°C, unless
EN LDO
= +25°C. (Continued)
A
PWM
5
0
0.0010.0100.1001.00010.000
ULTRA-SKIP
5
0
0.0010.0100.1001.00010.000
OUTPUT LOAD (A)
= 1.05V RIPPLE vs LOAD
OUT2
SKIP
OUTPUT LOAD (A)
= 1.5V RIPPLE vs LOAD
OUT1
, and REF, VIN= 12V,
REF3
ULTRA-SKIP
SKIP
PWM
600
500
400
300
200
FREQUENCY (kHz)
100
SKIP
0
0.0010.0100.1001.00010.000
FIGURE 25. V
ULTRA-SKIP
OUTPUT LOAD (A)
= 3.3V FREQUENCY vs LOADFIGURE 26. V
OUT2
PWM
12
14
12
10
8
6
RIPPLE (mV)
4
2
0
0.0010.0100.1001.00010.000
PWM
ULTRA-SKIP
OUTPUT LOAD (A)
= 3.3V RIPPLE vs LOAD
OUT2
SKIP
April 29, 2010
FN6373.6
Page 13
ISL6236
Typical Performance CurvesCircuit of Figures 66, 67 and 68, no load on LDO, OUT1, OUT2, V
EN2 = EN1 = VCC, V
otherwise noted. Typical values are at T
450
400
350
300
250
200
150
FREQUENCY (kHz)
100
50
ULTRA-SKIP
0
0.0011.000
FIGURE 27. V
5.04
5.02
5.00
4.98
4.96
4.94
4.92
4.90
4.88
OUTPUT VOLTAGE (V)
4.86
4.84
050100150200
PWM
SKIP
OUTPUT LOAD (A)
= 5V FREQUENCY vs LOADFIGURE 28. V
OUT1
BYP = 0V
BYP = 5V
OUTPUT LOAD (mA)
FIGURE 29. LDO OUTPUT 5V vs LOADFIGURE 30. LDO OUTPUT 3.3V vs LOAD
10.000
= 5V, PVCC = 5V, V
BYP
RIPPLE (mV)
3.35
3.30
3.25
3.20
3.15
3.10
OUTPUT VOLTAGE (V)
3.05
3.00
=5V, TA= -40°C to +100°C, unless
EN LDO
= +25°C. (Continued)
A
40
35
30
ULTRA-SKIP
25
20
15
10
5
0
0.0010.0100.1001.00010.000
050100150200
PWM
SKIP
OUTPUT LOAD (A)
OUT1
BYP = 3.3V
OUTPUT LOAD (mA)
= 5V RIPPLE vs LOAD
, and REF, VIN= 12V,
REF3
BYP = 0V
3.5
3.0
2.5
2.0
1.5
1.0
OUTPUT VOLTAGE (V)
0.5
0
0610
248
OUTPUT LOAD (mA)
FIGURE 31. V
vs LOADFIGURE 32. CHARGE PUMP vs LOAD (PWM)
REF3
OUTPUT VOLTAGE (V)
13
15.5
15.0
14.5
14.0
13.5
13.0
12.5
010
2458
OUTPUT LOAD (mA)
FN6373.6
April 29, 2010
Page 14
ISL6236
Typical Performance CurvesCircuit of Figures 66, 67 and 68, no load on LDO, OUT1, OUT2, V
EN2 = EN1 = VCC, V
otherwise noted. Typical values are at T
50
45
40
35
30
INPUT CURRENT (mA)
25
20
791113151719212325
IN PUT VOLTA GE ( V)
FIGURE 33. PWM NO LOAD INPUT CURRENT vs VIN
(EN = EN2 = EN LDO = VCC)
177.5
177.0
176.5
176.0
175.5
175.0
174.5
174.0
INPUT CURRENT (µA)
173.5
173.0
791113151719212325
FIGURE 35. STANDBY INPUT CURRENT vs V
INPUT VOLTAGE (V)
IN
(EN = EN2 = 0, EN LDO = VCC)
= 5V, PVCC = 5V, V
BYP
INPUT CURRENT (µA)
FIGURE 34. SKIP NO LOAD INPUT CURRENT vs VIN
FIGURE 36. SHUTDOWN INPUT CURRENT vs V
=5V, TA= -40°C to +100°C, unless
EN LDO
= +25°C. (Continued)
A
1400
1200
1000
800
600
400
200
0.0
791113151719212325
IN PUT VOLTA GE ( V)
(EN1 = EN2 = EN LDO = VCC)
26.5
26.0
25.5
25.0
24.5
24.0
23.5
23.0
INPUT CURRENT (µA)
22.5
22.0
791113151719212325
INPUT VOLTAGE (V)
(EN = EN2 = EN LDO = 0)
, and REF, VIN= 12V,
REF3
IN
V
500mV/DIV
REF3
LDO 1V/DIV
CP 5V/DIV
REF 1V/DIV
EN1 5V/DIV
V
IL1 2A/DIV
POK1 2V/DIV
FIGURE 37. REF, VREF3, LDO = 5V, CP, NO LOADFIGURE 38. START-UP V
14
2V/DIV
OUT1
= 5V (NO LOAD, SKIP MODE)
OUT1
FN6373.6
April 29, 2010
Page 15
ISL6236
Typical Performance CurvesCircuit of Figures 66, 67 and 68, no load on LDO, OUT1, OUT2, V
EN1 5V/DIV
IL1 2A/DIV
POK1 2V/DIV
FIGURE 39. START-UP V
EN2 5V/DIV
EN2 = EN1 = VCC, V
otherwise noted. Typical values are at T
V
2V/DIV
OUT1
= 5V (NO LOAD, PWM MODE)FIGURE 40. START-UP V
OUT1
= 5V, PVCC = 5V, V
BYP
IL1 5A/DIV
POK1 2V/DIV
=5V, TA= -40°C to +100°C, unless
EN LDO
= +25°C. (Continued)
A
EN1 5V/DIV
OUT1
EN2 5V/DIV
V
= 5V (FULL LOAD, PWM MODE)
, and REF, VIN= 12V,
REF3
2V/DIV
OUT1
V
OUT2
IL2 2A/DIV
FIGURE 41. START-UP V
EN2 5V/DIV
V
2V/DIV
OUT2
IL2 5A/DIV
POK2 2V/DIV
2V/DIV
POK2 2V/DIV
= 3.3V (NO LOAD, SKIP MODE)FIGURE 42. START-UP V
OUT2
EN2 5V/DIV
V
2V/DIV
OUT2
2V/DIV
V
OUT1
POK2 5V/DIV
POK1 5V/DIV
V
2V/DIV
OUT2
IL2 2A/DIV
OUT1
POK2 2V/DIV
= 3.3V (NO LOAD, PWM MODE)
FIGURE 43. START-UP V
PWM MODE)
= 3.3V (FULL LOAD,
OUT1
15
FIGURE 44. DELAYED START-UP (V
EN1 = REF)
OUT1
=5V, V
OUT2
April 29, 2010
=3.3V,
FN6373.6
Page 16
ISL6236
Typical Performance CurvesCircuit of Figures 66, 67 and 68, no load on LDO, OUT1, OUT2, V
EN1 5V/DIV
POK1 5V/DIV
POK2 5V/DIV
V
OUT2
2V/DIV
FIGURE 45. DELAYED START-UP (V
EN2 = REF)
LGATE1 5V/DIV
VOUT1 2V/DIV
=5V, V
OUT1
EN2 = EN1 = VCC, V
otherwise noted. Typical values are at T
=3.3V,
OUT2
= 5V, PVCC = 5V, V
BYP
V
OUT2
V
POK1 OR POK2 5V/DIV
FIGURE 46. SHUTDOWN (V
EN LDO
= +25°C. (Continued)
A
EN1 5V/DIV
2V/DIV
2V/DIV
OUT1
EN2 = REF)
LGATE1 5V/DIV
=5V, TA= -40°C to +100°C, unless
OUT1
, and REF, VIN= 12V,
REF3
=5V, V
OUT2
=3.3V,
RIPPLE 50mV/DIV
V
OUT1
IL1 5A/DIV
V
RIPPLE 50mV/DIV
OUT2
FIGURE 47. LOAD TRANSIENT V
LGATE1 5V/DIV
V
RIPPLE 20mV/DIV
OUT1
IL2 5A/DIV
V
RIPPLE 100mV/DIV
OUT1
IL1 5A/DIV
V
RIPPLE 50mV/DIV
OUT2
= 5VFIGURE 48. LOAD TRANSIENT V
OUT1
LGATE2 5V/DIV
IL2 5A/DIV
V
RIPPLE 50mV/DIV
OUT2
OUT1
V
RIPPLE 20mV/DIV
OUT1
= 5V (SKIP)
V
RIPPLE 50mV/DIV
OUT2
FIGURE 49. LOAD TRANSIENT V
16
= 3.3V (PWM)FIGURE 50. LOAD TRANSIENT V
OUT1
= 3.3V (SKIP)
OUT1
FN6373.6
April 29, 2010
Page 17
ISL6236
Typical Performance CurvesCircuit of Figures 66, 67 and 68, no load on LDO, OUT1, OUT2, V
V
0.5V/DIV
OUT2
REFIN2 0.5V/DIV
LDO RIPPLE 50mV/DIV
FIGURE 51. V
EN1 5V/DIV
EN2 = EN1 = VCC, V
otherwise noted. Typical values are at T
V
RIPPLE 20mV/DIV
OUT
TRACKING TO REFIN2FIGURE 52. LDO TRACKING TO LDOREFIN
OUT2
= 5V, PVCC = 5V, V
BYP
=5V, TA= -40°C to +100°C, unless
EN LDO
= +25°C. (Continued)
A
V
RIPPLE 20mV/DIV
OUT
LDO 1V/DIV
LDOREFIN 0.5V/DIV
V
RIPPLE 50mV/DIV
OUT2
EN1 5V/DIV
, and REF, VIN= 12V,
REF3
0.5V/DIV
V
OUT1
POK1 2V/DIV
FIGURE 53. START-UP V
EN1 5V/DIV
V
IL1 5A/DIV
IL1 2A/DIV
POK1 2V/DIV
= 1.5V (NO LOAD, SKIP MODE)FIGURE 54. START-UP V
OUT1
0.5V/DIV
OUT1
V
OUT1
IL1 2A/DIV
EN2 5V/DIV
V
OUT2
IL2 2A/DIV
0.5V/DIV
OUT1
0.5V/DIV
= 1.5V (NO LOAD, PWM MODE)
POK1 2V/DIV
FIGURE 55. START-UP V
PWM MODE)
= 1.5V (FULL LOAD,
OUT1
17
POK2 2V/DIV
FIGURE 56. START-UP V
SKIP MODE)
= 1.05V (NO LOAD,
OUT2
FN6373.6
April 29, 2010
Page 18
ISL6236
Typical Performance CurvesCircuit of Figures 66, 67 and 68, no load on LDO, OUT1, OUT2, V
EN2 5V/DIV
V
0.5V/DIV
OUT2
IL2 2A/DIV
POK2 2V/DIV
FIGURE 57. START-UP V
PWM MODE)
EN2 5V/DIV
V
0.5V/DIV
OUT2
= 1.05V (NO LOAD,
OUT1
EN2 = EN1 = VCC, V
otherwise noted. Typical values are at T
= 5V, PVCC = 5V, V
BYP
POK2 2V/DIV
FIGURE 58. START-UP V
=5V, TA= -40°C to +100°C, unless
EN LDO
= +25°C. (Continued)
A
EN2 5V/DIV
IL2 2A/DIV
OUT1
PWM MODE)
V
2V/DIV
OUT1
EN1 500mV/DIV
= 1.05V (FULL LOAD,
, and REF, VIN= 12V,
REF3
V
0.5V/DIV
OUT2
V
2V/DIV
OUT1
POK2 5V/DIV
POK1 5V/DIV
FIGURE 59. DELAYED START-UP (V
V
= 1.05V, EN1 = REF)
OUT2
EN1 5V/DIV
V
2V/DIV
OUT2
V
2V/DIV
OUT1
POK1 OR POK2 5V/DIV
OUT1
=1.5V,
V
500mV/DIV
OUT2
POK1 5V/DIV
POK2 5V/DIV
FIGURE 60. DELAYED START-UP (V
V
= 1.05V, EN2 = REF)
OUT2
LGATE1 5V/DIV
V
RIPPLE 50mV/DIV
OUT1
IL1 5A/DIV
V
RIPPLE 20mV/DIV
OUT2
OUT1
=1.5V,
FIGURE 61. SHUTDOWN (V
EN2 = REF)
OUT1
18
=1.5V, V
OUT2
= 1.05V,
FIGURE 62. LOAD TRANSIENT V
=1.5V (PWM)
OUT1
FN6373.6
April 29, 2010
Page 19
ISL6236
Typical Performance CurvesCircuit of Figures 66, 67 and 68, no load on LDO, OUT1, OUT2, V
LGATE1 5V/DIV
V
RIPPLE 50mV/DIV
OUT1
IL1 5A/DIV
FIGURE 63. LOAD TRANSIENT V
EN2 = EN1 = VCC, V
otherwise noted. Typical values are at T
V
RIPPLE 20mV/DIV
OUT2
= 1.5V (SKIP)FIGURE 64. LOAD TRANSIENT V
OUT1
LGATE2 5V/DIV
= 5V, PVCC = 5V, V
BYP
=5V, TA= -40°C to +100°C, unless
EN LDO
= +25°C. (Continued)
A
LGATE2 5V/DIV
V
RIPPLE 20mV/DIV
OUT1
IL1 5A/DIV
V
OUT2
RIPPLE 20mV/DIV
, and REF, VIN= 12V,
REF3
= 1.05V (PWM)
OUT1
V
RIPPLE 20mV/DIV
OUT1
V
RIPPLE 20mV/DIV
OUT2
FIGURE 65. LOAD TRANSIENT V
Typical Application Circuits
The typical application circuits (Figures 66, 67 and 68)
generate the 5V/7A, 3.3V/11A, 1.25V/5A, dynamic voltage/10A,
1.5V/5A, 1.05V/5A and external 14V charge pump main
supplies in a notebook computer. The ISL6236 is also equipped
with a secondary feedback, SECFB, used to monitor the output
of the 14V charge pump. In an event when the 14V drops
below its threshold voltage, SECFB comparator will turn on
LGATE1 for 300ns. This will refresh an external 14V charge
pump without overcharging the output voltage. The input supply
range is 5.5V to 25V.
Detailed Description
The ISL6236 dual-buck, BiCMOS, switch-mode
power-supply controller generates logic supply voltages for
notebook computers. The ISL6236 is designed primarily for
battery-powered applications where high efficiency and
low-quiescent supply current are critical. The ISL6236
IL2 5A/DIV
= 1.05V (SKIP)
OUT1
provides a pin-selectable switching frequency, allowing
operation for 200kHz/300kHz, 400kHz/300kHz, or
400kHz/500kHz on the SMPSs.
Light-load efficiency is enhanced by automatic Idle-Mode
operation, a variable-frequency pulse-skipping mode that
reduces transition and gate-charge losses. Each step-down,
power-switching circuit consists of 2 N-channel MOSFETs, a
rectifier, and an LC output filter. The output voltage is the
average AC voltage at the switching node, which is
regulated by changing the duty cycle of the MOSFET
switches. The gate-drive signal to the N-channel high-side
MOSFET must exceed the battery voltage, and is provided
by a flying-capacitor boost circuit that uses a 100nF
capacitor connected to BOOT.
Both SMPS1 and SMPS2 PWM controllers consist of a
triple-mode feedback network and multiplexer, a multi-input
PWM comparator, high-side and low-side gate drivers and
19
FN6373.6
April 29, 2010
Page 20
ISL6236
logic. In addition, SMPS2 can also use REFIN2 to track its
output from 0.5V to 2.50V. The ISL6236 contains
fault-protection circuits that monitor the main PWM outputs for
undervoltage and overvoltage conditions. A power-on
sequence block controls the power-up timing of the main
PWMs and monitors the outputs for undervoltage faults. The
ISL6236 includes an adjustable low drop-out linear regulator.
The bias generator blocks include the linear regulator, 3.3V
precision reference, 2V precision reference and automatic
bootstrap switchover circuit.
The synchronous-switch gate drivers are directly powered
from PVCC, while the high-side switch gate drivers are
indirectly powered from PVCC through an external capacitor
and an internal Schottky diode boost circuit.
An automatic bootstrap circuit turns off the LDO linear
regulator and powers the device from BYP if LDOREFIN is
set to GND or VCC. See Table 1.
TAB L E 1. LDO OUT P UT VOLTAGE TA B LE
LDO VOLTAGECONDITIONSCOMMENT
VOLTAGE at BYP LDOREFIN < 0.3V,
BYP > 4.63V
VOLTAGE at BYP LDOREFIN > VCC - 1V,
BYP > 3V
5VLDOREFIN < 0.3V,
BYP < 4.63V
3.3VLDOREFIN > VCC - 1V,
BYP < 3V
2 x LDOREFIN0.35V < LDOREFIN < 2.25VInternal LDO is
Internal LDO is
disabled.
Internal LDO is
disabled.
Internal LDO is
active.
Internal LDO is
active.
active.
FREE-RUNNING, CONSTANT ON-TIME PWM
CONTROLLER WITH INPUT FEED-FORWARD
The constant on-time PWM control architecture is a
pseudo-fixed-frequency, constant ON-time, current-mode
type with voltage feed-forward. The constant ON-time PWM
control architecture relies on the output ripple voltage to
provide the PWM ramp signal; thus the output filter
capacitor's ESR acts as a current-feedback resistor. The
high-side switch ON-time is determined by a one-shot whose
period is inversely proportional to input voltage and directly
proportional to output voltage. Another one-shot sets a
minimum OFF-time (300ns typ). The ON-time one-shot
triggers when the following conditions are met: the
error comparator's output is high, the synchronous rectifier
current is below the current-limit threshold, and the minimum
off time one-shot has timed out. The controller utilize the
valley point of the output ripple to regulate and determine the
OFF-time.
ON-TIME ONE-SHOT (t
ON
)
Each PWM core includes a one-shot that sets the high-side
switch ON-time for each controller. Each fast, low-jitter,
adjustable one-shot includes circuitry that varies the
ON-time in response to battery and output voltage. The
high-side switch ON-time is inversely proportional to the
battery voltage as measured by the VIN input and
proportional to the output voltage. This algorithm results in a
nearly constant switching frequency despite the lack of a
fixed-frequency clock generator. The benefit of a constant
switching frequency is that the frequency can be selected to
avoid noise-sensitive frequency regions:
See Table 2 for approximate K- factors. Switching frequency
increases as a function of load current due to the increasing
drop across the synchronous rectifier, which causes a faster
inductor-current discharge ramp. ON-times translate only
roughly to switching frequencies. The ON-times established
in the “Electrical Specifications” table starting on page 3 are
influenced by switching delays in the external high-side
power MOSFET. Also, the dead-time effect increases the
effective ON-time, reducing the switching frequency. It
occurs only in PWM mode (SKIP
= VCC) and during
dynamic output voltage transitions when the inductor current
reverses at light or negative load currents. With reversed
inductor current, the inductor's EMF causes PHASE to go
high earlier than normal, extending the ON-time by a period
equal to the UGATE-rising dead time.
TABLE 2. APPROXIMATE K-FACTOR ERRORS
APPROXIMATE
K-FACTOR
ERROR (%)
SMPS
(t
= GND, REF,
ON
or OPEN), V
= GND),
(t
ON
V
OUT2
(t
= VCC),
ON
V
OUT1
= VCC, REF,
(t
ON
or OPEN), V
OUT1
OUT2
SWITCHING
FREQUENCY
(kHz)
4002.5±10
5002.0±10
2005.0±10
3003.3±10
K-FACTOR
(µs)
For loads above the critical conduction point, the actual
switching frequency is:
LDOREFIN TIED TO GND = 5V
LDOREFIN TIED TO VCC = 3.3V
Q1a
Q1b
REFIN2: DYNAMIC 0V TO 2.5V
REFIN2 TIED TO VREF3 = 1.05V
REFIN2 TIED TO VCC = 3.3V
C1
C1
10
10
µF
L2: 2.2µF
SI4816BDY
VCC
R4
200kΩ
LDO
OUT2
1.05V/5A
C6
4.7µF
VCC
F
C2
C2
330µF
4mΩ
6.3V
R6
200kΩ
FREQUENCY-DEPENDENT COMPONENTS
1.5V/1.05V SMPS
SWITCHING
FREQUENCY
t
=VCC
ON
200kHz/300kHz
L13.3µH
L22.7µH
C2330µF
C11330µF
FIGURE 67. ISL6236 TYPICAL SYSTEM REGULATOR APPLICATION CIRCUIT WITHOUT CHARGE PUMP
22
FN6373.6
April 29, 2010
Page 23
OUT1
5V/7A
C11
330µF
9mΩ
6.3V
C12
0.1µF
CP
14V/10mA
C15
0.1µF
D1
D1a
D1b
D2a
D2b
C10
10µF
R1
200kΩ
VIN: 5.5V TO 25V
Q3
IRF7807V
L1: 4.7µH
Q4
IRF7811AV
D3
C8
0.1µF
C14
0.1µF
D2
R2
39.2kΩ
C9
C9
0.1µF
VCC
FB1 TIED TO GND = 5V
FB1 TIED TO VCC = 1.5V
R3
200kΩ
ON
OFFONOFFOFF
GND
PVCC
VIN
BOOT1
UGATE1
PHASE1
LGATE1
OUT1
EN1
BYP
FB1
AGND
ILIM1
SKIP
EN LDO
SECFB
TON
ISL6236
C5
1µF
VCC
ISL6236
PAD
LDO
LDOREFIN
BOOT2
UGATE2
PHASE2
LGATE2
PGND
OUT2
EN2
REFIN2
ILIM2
VREF3
REF
POK1
POK2
R5
150kΩ
LDOREFIN TIED TO GND = 5V
LDOREFIN TIED TO VCC = 3.3V
C1
C1
10µF
10
Q1
C4
0.1µF
VCC
VCC
C3
OPEN
C7
0.1µF
IRF7821
L2: 4.7µH
Q2
IRF7832
REFIN2: DYNAMIC 0 TO 2V
REFIN2 TIED TO VREF3 = 1.05V
REFIN2 TIED TO VCC = 3.3V
VCC
LDO
R4
200kΩ
C6
4.7µF
OUT2
3.3V/11A
C2
C2
330µF
VCC
R6
200kΩ
9mΩ
4V
FREQUENCY-DEPENDENT COMPONENTS
=REF
t
5V/3.3V SMPS
SWITCHING
FREQUENCY
t
=VCC
ON
200kHz/300kHz400kHz/300kHz400kHz/500kHz
ON
(OR OPEN)t
ON
=GND
L16.8µH6.8µH4.7µH
L27.6µH4.7µH4.7µH
C22x470µF2x330µF2x330µF
C11330µF330µF330µF
FIGURE 68. ISL6236 TYPICAL SYSTEM REGULATOR APPLICATION CIRCUIT WITH 14V CHARGE PUMP
23
FN6373.6
April 29, 2010
Page 24
ISL6236
I
TON
SKIP
BOOT1
UGATE1
PHASE1
LGATE1
GND
ILIM1
SECFB
FB1
OUT1
BYP
LDO
LDOREFIN
PVCC
SMPS1
SYNCHRONOUS
PWM BUCK
CONTROLLER
OUT1
SW THRESHOLD
-
-+-
+
+
LDO
EN1
POK1
SMPS2
SYNCHRONOUS
PWM BUCK
CONTROLLER
EN2
POK2
OUT2
INTERNAL
LOGIC
PVCC
10
BOOT2
UGATE2
PHASE2
LGATE2
PGND
ILIM2
REFIN2
OUT2
POK2
POK1
VCC
Ω
VIN
EN LDO
EN1
EN2
POWER-ON
POWER-ON
SQUENCE
SEQUENCE
CLEAR FAULT
CLEAR FAULT
LATCH
LATCH
VREF3
THERMAL
THERMAL
SHUTDOWN
SHUTDOWN
REF
FIGURE 69. DETAILED FUNCTIONAL DIAGRAM ISL6236
PVCC
VREF3
REF
24
FN6373.6
April 29, 2010
Page 25
VIN
VIN
ILIM
t
ON
5µA
+
++
OUT
REFIN2 (SMPS2)
VREF
+
+
SLOPE COMP
ISL6236
+
+
+
+
+
COMP
MIN. t
Q
ONE SHOT
BOOT
UV
DETECT
OFF
R
R
R
S
S
S
TRIG
Q
Q
Q
Q
Q
TO UGATE DRIVER
BOOT
PHASE
OUT
FB
VCC
FB
DECODER
0.9V
1.1V
0.7V
REF
REF
REF
+
+
+
+
FIGURE 70. PWM CONTROLLER (ONE SIDE ONLY)
Automatic Pulse-Skipping Switchover
(Idle Mode)
In Idle Mode (SKIP = GND), an inherent automatic switchover
to PFM takes place at light loads. This switchover is affected
by a comparator that truncates the low-side switch ON-time at
the inductor current's zero crossing. This mechanism causes
the threshold between pulse-skipping PFM and non-skipping
PWM operation to coincide with the boundary between
continuous and discontinuous inductor-current operation (also
known as the critical conduction point):
KV
⋅
VINV
I
LOAD SKIP()
=
OUT
------------------------
2L⋅
–
OUT
------------------------------- -
V
IN
(EQ. 3)
Â
S
+
++
+
++
+
++
OV LATCH
UV LATCH
+
+
+
SKIP
PGOOD
BLANKING
INDUCTOR CURRENT
S
S
S
R
R
R
20ms
Δ
t
t
t
t
Q
Q
Q
Q
Q
I
FAU LT
FAULT
LATCH
LATCH
LOGIC
=
=
=
=
VIN-V
VIN-V
VIN-V
V-V
OUT
L
L
L
TO LGATE DRIVER
ONE-SHOT
SECFB
+
SMSP1 ONLY
2V
I
I
I
I
PEAK
PEAK
PEAK
PEAK
I
LOAD
= I
PEAK/2
where K is the ON-time scale factor (see “ON-TIME ONESHOT (t
PFM/PWM crossover occurs, I
)” on page 20). The load-current level at which
ON
LOAD(SKIP)
, is equal to half
the peak-to-peak ripple current, which is a function of the
inductor value (Figure 71). For example, in the ISL6236
typical application circuit with V
=5V, VIN=12V,
OUT1
L = 7.6µH, and K = 5µs, switchover to pulse-skipping
operation occurs at I
= 0.96A or about on-fifth full load.
LOAD
The crossover point occurs at an even lower value if a
swinging (soft-saturation) inductor is used.
25
ON-TIMETIME
0
FIGURE 71. ULTRASONIC CURRENT WAVEFORMS
The switching waveforms may appear noisy and
asynchronous when light loading causes pulse-skipping
operation, but this is a normal operating condition that
results in high light-load efficiency. Trade-offs in PFM noise
vs light-load efficiency are made by varying the inductor
value. Generally, low inductor values produce a broader
efficiency vs load curve, while higher values result in higher
FN6373.6
April 29, 2010
Page 26
ISL6236
full-load efficiency (assuming that the coil resistance remains
fixed) and less output voltage ripple. Penalties for using
higher inductor values include larger physical size and
degraded load-transient response (especially at low
input-voltage levels).
DC output accuracy specifications refer to the trip level of the
error comparator. When the inductor is in continuous
conduction, the output voltage has a DC regulation higher
than the trip level by 50% of the ripple. In discontinuous
conduction (SKIP
= GND, light load), the output voltage has
a DC regulation higher than the trip level by approximately
1.0% due to slope compensation.
Forced-PWM Mode
The low-noise, forced-PWM (SKIP = VCC) mode disables
the zero-crossing comparator, which controls the low-side
switch ON-time. Disabling the zero-crossing detector causes
the low-side, gate-drive waveform to become the
complement of the high-side, gate-drive waveform. The
inductor current reverses at light loads as the PWM loop
strives to maintain a duty ratio of V
OUT/VIN
. The benefit of
forced-PWM mode is to keep the switching frequency fairly
constant, but it comes at a cost: the no-load battery current
can be 10mA to 50mA, depending on switching frequency
and the external MOSFETs.
Forced-PWM mode is most useful for reducing
audio-frequency noise, improving load-transient response,
providing sink-current capability for dynamic output voltage
adjustment, and improving the cross-regulation of
multiple-output applications that use a flyback transformer or
coupled inductor.
Leaving SKIP unconnected or connecting SKIP to REF
activates a unique pulse-skipping mode with a minimum
switching frequency of 25kHz. This ultrasonic pulse-skipping
mode eliminates audio-frequency modulation that would
otherwise be present when a lightly loaded controller
automatically skips pulses. In ultrasonic mode, the controller
automatically transitions to fixed-frequency PWM operation
when the load reaches the same critical conduction point
(ILOAD(SKIP)).
An ultrasonic pulse occurs when the controller detects that
no switching has occurred within the last 20µs. Once
triggered, the ultrasonic controller pulls LGATE high, turning
on the low-side MOSFET to induce a negative inductor
current. After FB drops below the regulation point, the
controller turns off the low-side MOSFET (LGATE pulled low)
and triggers a constant ON-time (UGATE driven high). When
the ON-time has expired, the controller re-enables the
low-side MOSFET until the controller detects that the
inductor current dropped below the zero-crossing threshold.
Starting with a LGATE pulse greatly reduces the peak output
voltage when compared to starting with a UGATE pulse, as
long as VFB < VREF, LGATE is off and UGATE is on, similar
to pure SKIP mode.
40µs (MAX)
INDUCTOR
CURRENT
ZERO-CROSSING
Zero-Crossing
DETECTION
Detection
0A
FB<REG.POINT
FB<Reg.Point
ON-TIME (t
ON-TIME (tON)
FIGURE 72. ULTRASONIC CURRENT WAVEFORMS
)ON
)
Reference and Linear Regulators (VREF3,
REF, LDO and 14V Charge Pump)
The 3.3V reference (VREF3) is accurate to ±1.5%
over-temperature, making VREF3 useful as a precision
system reference. VREF3 can supply up to 5mA for external
loads. Bypass VREF3 to GND with a 0.01µF capacitor.
Leave it open if there is no load.
The 2V reference (REF) is accurate to ±1% over-temperature,
also making REF useful as a precision system reference.
Bypass REF to GND with a 0.1µF (min) capacitor. REF can
supply up to 50µA for external loads.
An internal regulator produces a fixed 5V
(LDOREFIN < 0.2V) or 3.3V (LDOREFIN > VCC - 1V). In an
adjustable mode, the LDO output can be set from 0.7V to
4.5V. The LDO output voltage is equal to two times the
LDOREFIN voltage. The LDO regulator can supply up to
100mA for external loads. Bypass LDO with a minimum
4.7µF ceramic capacitor. When the LDOREFIN < 0.2V and
BYP voltage is 5V, the LDO bootstrap-switchover to an
internal 0.7Ω P-Channel MOSFET switch connects BYP to
LDO pin while simultaneously shutting down the internal
linear regulator. These actions bootstrap the device,
powering the loads from the BYP input voltages, rather than
through internal linear regulators from the battery. Similarly,
when the BYP = 3.3V and LDOREFIN = VCC, the LDO
bootstrap-switchover to an internal 1.5Ω P-Channel
MOSFET switch connects BYP to LDO pin while
simultaneously shutting down the internal linear regulator.
No switchover action in adjustable mode.
In Figure 68, the external 14V charge pump is driven by
LGATE1. When LGATE1 is low, D1a charged C8 sourced
from OUT1. C8 voltage is equal to OUT1 minus a diode
drop. When LGATE1 transitions to high, the charges from C8
will transfer to C
through D1b and charge it to VLGATE1
12
26
FN6373.6
April 29, 2010
Page 27
ISL6236
plus VC8. As LGATE1 transitions low on the next cycle, C
12
will charge C14 to its voltage minus a diode drop through
D2a. Finally, C
charges C15 through D2b when LAGET1
14
switched to high. CP output voltage is:
CPV
OUT1
2V
LGATE1
4V
⋅–⋅+=
D
(EQ. 4)
where:
•V
•V
is the peak voltage of the LGATE1 driver
LGATE1
is the forward diode dropped across the Schottkys
D
SECFB is used to monitor the charge pump through resistive
divider. In an event when SECFB dropped below 2V, the
detection circuit force the highside MOSFET (SMPS1) off
and the low-side MOSFET (SMPS1) on for 300ns to allow
CP to recharge and SECFB rise above 2V. In the event of an
overload on CP where SECFB can not reach more than 2V,
the monitor will be deactivated. Special care should be taken
to ensure enough normal voltage ripple on each cycle as to
prevent CP shut-down. The SECFB pin has ~17mV of
hysteresis, so the ripple should be enough to bring the
SECFB voltage above the threshold by ~3x the hysteresis,
or (2V + 3*17mV) = 2.051V. Reducing the CP decoupling
capacitor and placing a small ceramic capacitor (10pF to
47pF) in parallel with the upper leg of the SECFB resistor
feedback network (R
of Figure 68), will also increase the
1
robustness of the charge pump.
For lower power dissipation, the ISL6236 uses the
ON-resistance of the synchronous rectifier as the
current-sense element. Use the worst-case maximum value
for r
for the rise in r
from the MOSFET data sheet. Add some margin
DS(ON)
with temperature. A good general rule
DS(ON)
is to allow 0.5% additional resistance for each °C of
temperature rise. The ISL6236 controller has a built-in 5µA
current source, as shown in Figure 74. Place the hottest
power MOSEFTs as close to the IC as possible for best
thermal coupling. The current limit varies with the
ON-resistance of the synchronous rectifier. When combined
with the undervoltage-protection circuit, this current-limit
method is effective in almost every circumstance.
R
ILIM
V
V
++
++
ILIM
ILIM
VCC
VCC
5
5µA
+
+
+
+
TO CURRENT
9R
9R
LIMIT LOGIC
R
R
Current-Limit Circuit (ILIM) with r
DS(ON)
Temperature Compensation
The current-limit circuit employs a "valley" current-sensing
algorithm. The ISL6236 uses the ON-resistance of the
synchronous rectifier as a current-sensing element. If the
magnitude of the current-sense signal at PHASE is above
the current-limit threshold, the PWM is not allowed to initiate
a new cycle. The actual peak current is greater than the
current-limit threshold by an amount equal to the inductor
ripple current. Therefore, the exact current-limit
characteristic and maximum load capability are a function of
the current-limit threshold, inductor value and input and
output voltage.
I
PEAK
I
LOAD
I
LIMIT
I
I
I
I
LOAD(MAX)
INDUCTOR CURRENT
FIGURE 73. “VALLEY” CURRENT LIMIT THRESHOLD POINT
I
I
=
=
=
VALLIM
)(
)(
)(
)(
LOAD
TIME
Δ
I
-
-
-
-=
2
Δ
FIGURE 74. CURRENT LIMIT BLOCK DIAGRAM
A negative current limit prevents excessive reverse inductor
currents when VOUT sinks current. The negative
current-limit threshold is set to approximately 120% of the
positive current limit and therefore tracks the positive current
limit when ILIM is adjusted. The current-limit threshold is
adjusted with an external resistor for ISL6236 at ILIM. The
current-limit threshold adjustment range is from 20mV to
200mV. In the adjustable mode, the current-limit threshold
voltage is 1/10th the voltage at ILIM. The voltage at ILIM pin
is the product of 5µA*R
. The threshold defaults to
ILIM
100mV when ILIM is connected to VCC. The logic threshold
for switch-over to the 100mV default value is approximately
VCC -1V.
The PC board layout guidelines should be carefully
observed to ensure that noise and DC errors do not corrupt
the current-sense signals at PHASE.
I
MOSFET Gate Drivers (UGATE, LGATE)
The UGATE and LGATE gate drivers sink 2.0A and 3.3A
respectively of gate drive, ensuring robust gate drive for
high-current applications. The UGATE floating high-side
MOSFET drivers are powered by diode-capacitor charge
pumps at BOOT. The LGATE synchronous-rectifier drivers
are powered by PVCC.
27
FN6373.6
April 29, 2010
Page 28
5V
5V
5V
5V
BOOT
BOOT
BOOT
BOOT
BOOT
ISL6236
where:
• PVCC is 5V
•C
10
10
10
10
10
Ω
VIN
is the gate capacitance of the high-side MOSFET
GS
UGATE
UGATE
UGATE
UGATE
C
BOOT
PHASE
ISL88732
ISL88732ISL88733
ISL88733
ISL6236
ISL6236
ISL88734
ISL88734
FIGURE 75. REDUCING THE SWITCHING-NODE RISE TIME
Q1
OUT
OUT
OUT
OUT
The internal pull-down transistors that drive LGATE low have
a 0.6Ω typical ON-resistance. These low ON-resistance
pull-down transistors prevent LGATE from being pulled up
during the fast rise time of the inductor nodes due to
capacitive coupling from the drain to the gate of the low-side
synchronous-rectifier MOSFETs. However, for high-current
applications, some combinations of high- and low-side
MOSFETs may cause excessive gate-drain coupling, which
leads to poor efficiency and EMI-producing shoot-through
currents. Adding a 1Ω resistor in series with BOOT
increases the turn-on time of the high-side MOSFETs at the
expense of efficiency, without degrading the turn-off time
(Figure 75).
Adaptive dead-time circuits monitor the LGATE and UGATE
drivers and prevent either FET from turning on until the other is
fully off. This algorithm allows operation without shoot-through
with a wide range of MOSFETs, minimizing delays and
maintaining efficiency. There must be low resistance, low
inductance paths from the gate drivers to the MOSFET gates
for the adaptive dead-time circuit to work properly. Otherwise,
the sense circuitry interprets the MOSFET gate as "off" when
there is actually charge left on the gate. Use very short, wide
traces measuring 10 to 20 squares (50 mils to 100 mils wide if
the MOSFET is 1” from the device).
Boost-Supply Capacitor Selection (Buck)
The boost capacitor should be 0.1µF to 4.7µF, depending on
the input and output voltages, external components, and PC
board layout. The boost capacitance should be as large as
possible to prevent it from charging to excessive voltage, but
small enough to adequately charge during the minimum
low-side MOSFET conduction time, which happens at
maximum operating duty cycle (this occurs at minimum input
voltage). The minimum gate to source voltage (V
determined by:
C
BOOT
V
GS MIN()
PVCC
---------------------------------------
⋅=
C
+
BOOTCGS
GS(MIN)
) is
(EQ. 5)
Boost-Supply Refresh Monitor
In pure skip mode, the converter frequency can be very low
with little to no output loading. This produces very long off
times, where leakage can bleed down the BOOT capacitor
voltage. If the voltage falls too low, the converter may not be
able to turn on UGATE when the output voltage falls to the
reference. To prevent this, the ISL6236 monitors the BOOT
capacitor voltage, and if it falls below 3V, it initiates an
LGATE pulse, which will refresh the BOOT voltage.
POR, UVLO and Internal Digital Soft-Start
Power-on reset (POR) occurs when VIN rises above
approximately 3V, resetting the undervoltage, overvoltage,
and thermal-shutdown fault latches. PVCC
undervoltage-lockout (UVLO) circuitry inhibits switching
when PVCC is below 4V. LGATE is low during UVLO. The
output voltages begin to ramp up once PVCC exceeds its 4V
UVLO and REF is in regulation. The internal digital soft-start
timer begins to ramp up the maximum-allowed current limit
during start-up. The 1.7ms ramp occurs in five steps. The
step size are 20%, 40%, 60%, 80% and 100% of the positive
current limit value.
Power-Good Output (POK)
The POK comparator continuously monitors both output
voltages for undervoltage conditions. POK is actively held
low in shutdown, standby, and soft-start. POK1 releases and
digital soft-start terminates when V
error-comparator threshold. POK1 goes low if V
turns off or is 10% below its nominal regulation point. POK1
is a true open-drain output. Likewise, POK2 is used to
monitor V
OUT2
.
Fault Protection
The ISL6236 provides overvoltage/undervoltage fault
protection in the buck controllers. Once activated, the
controller continuously monitors the output for undervoltage
and overvoltage fault conditions.
OUT-OF-BOUND CONDITION
When the output voltage is 5% above the set voltage, the
out-of-bound condition activates. LGATE turns on until
output reaches within regulation. Once the output is within
regulation, the controller will operate as normal. It is the "first
line of defense" before OVP. The output voltage ripple must
be sized low enough as to not nuisance trip the OOB
threshold. The equations in “Output Capacitor Selection” on
page 31 should be used to size the output voltage ripple
below 3% of the nominal output voltage set point.
outputs reach the
OUT1
OUT1
output
28
FN6373.6
April 29, 2010
Page 29
ISL6236
OVERVOLTAGE PROTECTION
When the output voltage of V
is 11% (16% for V
OUT1
OUT2
above the set voltage, the overvoltage fault protection
activates. This latches on the synchronous rectifier MOSFET
with 100% duty cycle, rapidly discharging the output
capacitor until the negative current limit is achieved. Once
negative current limit is met, UGATE is turned on for a
minimum ON-time, followed by another LGATE pulse until
negative current limit. This effectively regulates the
discharge current at the negative current limit in an effort to
prevent excessively large negative currents that cause
potentially damaging negative voltages on the load. Once an
overvoltage fault condition is set, it can only be reset by
toggling SHDN
, EN, or cycling VIN (POR).
UNDERVOLTAGE PROTECTION
When the output voltage drops below 70% of its regulation
voltage for at least 100µs, the controller sets the fault latch
and begins the discharge mode (see “Shutdown Mode” on
page 29 and “Discharge Mode (Soft-Stop)” on page 29).
UVP is ignored for at least 20ms (typical), after start-up or
after a rising edge on EN. Toggle EN or cycle VIN (POR) to
clear the undervoltage fault latch and restart the controller.
UVP only applies to the buck outputs.
THERMAL PROTECTION
The ISL6236 has thermal shutdown to protect the devices
from overheating. Thermal shutdown occurs when the die
temperature exceeds +150°C. All internal circuitry shuts
down during thermal shutdown. The ISL6236 may trigger
thermal shutdown if LDO is not bootstrapped from OUT
while applying a high input voltage on V
and drawing the
IN
maximum current (including short circuit) from LDO. Even if
LDO is bootstrapped from OUT, overloading the LDO causes
large power dissipation on the bootstrap switches, which
)
may result in thermal shutdown. Cycling EN, EN LDO, or
VIN (POR) ends the thermal-shutdown state.
Discharge Mode (Soft-Stop)
When a transition to standby or shutdown mode occurs, or
the output undervoltage fault latch is set, the outputs
discharge to GND through an internal 25Ω switch. The
reference remains active to provide an accurate threshold
and to provide overvoltage protection.
Shutdown Mode
The ISL6236 SMPS1, SMPS2 and LDO have independent
enabling control. Drive EN1, EN2 and EN LDO below the
precise input falling-edge trip level to place the ISL6236 in its
low-power shutdown state. The ISL6236 consumes only
20µA of quiescent current while in shutdown. When
shutdown mode activates, the 3.3V VREF3 remain on. Both
SMPS outputs are discharged to 0V through a 25Ω switch.
Power-Up Sequencing and On/Off Controls (EN)
EN1 and EN2 control SMPS power-up sequencing. EN1 or
EN2 rising above 2.4V enables the respective outputs. EN1
or EN2 falling below 1.6V disables the respective outputs.
Connecting EN1 or EN2 to REF will force its outputs off while
the other output is below regulation. The sequenced SMPS
will start once the other SMPS reaches regulation. The
second SMPS remains on until the first SMPS turns off, the
device shuts down, a fault occurs or PVCC goes into
undervoltage lockout. Both supplies begin their power-down
sequence immediately when the first supply turns off. Driving
EN below 0.8V clears the overvoltage, undervoltage and
thermal fault latches.
TABLE 3. OPERATING-MODE TRUTH TABLE
MODECONDITIONCOMMENT
Power-UpPVCC < UVLO threshold.Transitions to discharge mode after a VIN POR and after REF becomes valid. LDO,
VREF3, and REF remain active.
RunEN LDO = high, EN1 or EN2
enabled.
Overvoltage
Protection
Undervoltage
Protection
DischargeEither SMPS output is still high in
StandbyEN1, EN2 < startup threshold, EN
ShutdownEN1, EN2, EN LDO = lowDischarge switch (25Ω) connects OUT to PGND. All circuitry off except VREF3.
Thermal ShutdownTJ > +150°CAll circuitry off. Exited by VIN POR or cycling EN. VREF3 remain active.
Either output > 111% (VOUT1) or
116% (VOUT2) of nominal level.
Either output < 70% of nominal after
20ms time-out expires and output is
enabled.
either standby mode or shutdown
mode
LDO = High
29
Normal operation
LGATE is forced high. LDO, VREF3 and REF active. Exited by a VIN POR, or by
toggling EN1 or EN2.
The internal 25Ω switch turns on. LDO, VREF3 and REF are active. Exited by a VIN
POR or by toggling EN1 or EN2.
Discharge switch (25Ω) connects OUT to GND. One output may still run while the
other is in discharge mode. Activates when PVCC is in UVLO, or transition to UVLO,
standby, or shutdown has begun. LDO, VREF3 and REF active.
LDO, VREF3 and REF active.
FN6373.6
April 29, 2010
Page 30
ISL6236
TABLE 4. SHUTDOWN AND STANDBY CONTROL LOGIS
VEN LDOVEN1 (V)VEN2 (V)LDOSMPS1SMPS2
LowLowLowOffOffOff
“>2.5” → HighLowLowOnOffOff
“>2.5” → HighHighHighOnOnOn
“>2.5” → HighHighLowOnOnOff
“>2.5” → HighLowHighOnOffOn
“>2.5” → HighHighREFOnOnOn (after SMPS1 is up)
“>2.5” → HighREFHighOnOn (after SMPS2 is up)On
Adjustable-Output Feedback (Dual-Mode FB)
Connect FB1 to GND to enable the fixed 5V or tie FB1 to
VCC to set the fixed 1.5V output. Connect a resistive
voltage-divider at FB1 between OUT1 and GND to adjust the
respective output voltage between 0.7V and 5.5V
(Figure 76). Choose R
for R
using Equation 6.
1
V
⎛⎞
OUT1
R1R
where V
-------------------
⋅=
⎜⎟
2
V
⎝⎠
FB1
= 0.7V nominal.
FB1
to be approximately 10k and solve
2
1–
(EQ. 6)
Likewise, connect REFIN2 to VCC to enable the fixed 3.3V
or tie REFIN2 to VREF3 to set the fixed 1.05V output. Set
REFIN2 from 0V to 2.50V for SMPS2 tracking mode
(Figure 77).
VR
⎛⎞
R
3R4
-------------------
⋅=
⎝⎠
V
1–
OUT2
(EQ. 7)
where:
• VR = 2V nominal (if tied to REF)
or
• VR = 3.3V nominal (if tied to VREF3)
Design Procedure
Establish the input voltage range and maximum load current
before choosing an inductor and its associated ripple current
ratio (LIR). The following four factors dictate the rest of the
design:
1. Input Voltage Range. The maximum value (V
IN(MAX)
must accommodate the maximum AC adapter voltage.
The minimum value (V
) must account for the
IN(MIN)
lowest input voltage after drops due to connectors, fuses
and battery selector switches. Lower input voltages result
in better efficiency.
2. Maximum Load Current. The peak load current
(I
LOAD(MAX)
) determines the instantaneous component
stress and filtering requirements and thus drives output
capacitor selection, inductor saturation rating and the
design of the current-limit circuit. The continuous load
current (I
) determines the thermal stress and drives
LOAD
)
the selection of input capacitors, MOSFETs and other
critical heat-contributing components.
3. Switching Frequency. This choice determines the basic
trade-off between size and efficiency. The optimal
frequency is largely a function of maximum input voltage
and MOSFET switching losses.
4. Inductor Ripple Current Ratio (LIR). LIR is the ratio of
the peak-peak ripple current to the average inductor
current. Size and efficiency trade-offs must be
considered when setting the inductor ripple current ratio.
Low inductor values cause large ripple currents, resulting
in the smallest size, but poor efficiency and high output
noise. Also, total output ripple above 3.5% of the output
regulation will cause the controller to trigger out-of-bound
condition. The minimum practical inductor value is one
that causes the circuit to operate at critical conduction
(where the inductor current just touches zero with every
cycle at maximum load). Inductor values lower than this
grant no further size-reduction benefit.
The ISL6236 pulse-skipping algorithm (SKIP
= GND)
initiates skip mode at the critical conduction point, so the
inductor's operating point also determines the load
current at which PWM/PFM switchover occurs. The
optimum LIR point is usually found between 25% and
50% ripple current.
V
IN
UGATE1
ISL6236
LGATE1
OUT1
FB1
FIGURE 76. SETTING V
Q3
Q4
R1
R2
WITH A RESISTOR DIVIDER
OUT1
OUT1
30
FN6373.6
April 29, 2010
Page 31
ISL6236
V
IN
UGATE2
UGATE
UGATE2
UGATE
ISL88732
ISL88732
ISL6236
ISL88733
ISL6236
ISL88733ISL88734
ISL88734
LGATE
LGATE2
LGATE
LGATE2
VOUT
OUT2
VOUT
OUT2
FB
FB
REFIN2
REFIN2
R4
FIGURE 77. SETTING V
TRACKING
Q1
Q2
Q2
Q2
Q2
VR
VR
R3
WITH A VOLTAGE DIVIDER FOR
OUT2
OUT2
Inductor Selection
The switching frequency (ON-time) and operating point (%
ripple or LIR) determine the inductor value as follows:
Find a low-loss inductor having the lowest possible DC
resistance that fits in the allotted dimensions. Ferrite cores
are often the best choice. The core must be large enough
not to saturate at the peak inductor current (IPEAK):
IPEAKI
The inductor ripple current also impacts transient response
performance, especially at low V
inductor values allow the inductor current to slew faster,
replenishing charge removed from the output filter capacitors
by a sudden load step. The peak amplitude of the output
transient (VSAG) is also a function of the maximum duty
factor, which can be calculated from the ON-time and
minimum OFF-time:
where minimum OFF-time = 0.35µs (max) and K is from
Table 2.
+()
LOAD MAX()
LOAD(MAX)
LOAD MAX()
LOAD MAX()
⋅⋅
OUTVOUT
=5A, VIN=12V, V
(EQ. 8)
=5V,
OUT2
8.3μ H==
LIR 2⁄()I
⋅[]+=
LOAD MAX()
IN-VOUT
V
⎛⎞
⎛⎞
2
OUT_
-------------------
LK
⋅
⎜⎟
⎜⎟
V
⎝⎠
⎝⎠
IN
–
V
⎛⎞
INVOUT
------------------------------- -
K
⎜⎟
V
⎝⎠
IN
differences. Low
+
t
OFF MIN()
-
t
OFF MIN()
(EQ. 9)
(EQ. 10)
(EQ. 11)
Determining the Current Limit
The minimum current-limit threshold must be great enough
to support the maximum load current when the current limit
is at the minimum tolerance value. The valley of the inductor
current occurs at I
LOAD(MAX)
minus half of the ripple
current; therefore:
I
LIMIT LOW()ILOAD MAX()
where: I
LIMIT(LOW)
= minimum current-limit threshold
voltage divided by the r
DS(ON)
LIR 2⁄()I
⋅[]–>
of Q2/Q4.
LOAD MAX()
Use the worst-case maximum value for r
MOSFET Q
rise in r
DS(ON)
data sheet and add some margin for the
2/Q4
with temperature. A good general rule is to
DS(ON)
(EQ. 12)
from the
allow 0.2% additional resistance for each °C of temperature
rise.
Examining the 5A circuit example with a maximum
r
DS(ON)
=5mΩ at room temperature. At +125°C reveals the
following:
I
LIMIT LOW()
4.17A 4.12A>
25m V()5mΩ 1.2×()5A0.35 2⁄()5A–>()⁄=
(EQ. 13)
(EQ. 14)
4.17A is greater than the valley current of 4.12A, so the
circuit can easily deliver the full-rated 5A using the 30mV
nominal current-limit threshold voltage.
Output Capacitor Selection
The output filter capacitor must have low enough equivalent
series resistance (ESR) to meet output ripple and
load-transient requirements, yet have high enough ESR to
satisfy stability requirements. The output capacitance must
also be high enough to absorb the inductor energy while
transitioning from full-load to no-load conditions without
tripping the overvoltage fault latch. In applications where the
output is subject to large load transients, the output
capacitor's size depends on how much ESR is needed to
prevent the output from dipping too low under a load
transient. Ignoring the sag due to finite capacitance:
V
DIP
----------------------------------
≤
R
SER
I
LOAD MAX()
where V
is the maximum-tolerable transient voltage drop.
DIP
In non-CPU applications, the output capacitor's size
depends on how much ESR is needed to maintain an
acceptable level of output voltage ripple:
V
PP–
-----------------------------------------------
≤
R
ESR
LIRI
⋅
LOAD MAX()
where V
is the peak-to-peak output voltage ripple. The
P-P
actual capacitance value required relates to the physical size
needed to achieve low ESR, as well as to the chemistry of
the capacitor technology. Thus, the capacitor is usually
(EQ. 15)
(EQ. 16)
31
FN6373.6
April 29, 2010
Page 32
)
)
)
ISL6236
selected by ESR and voltage rating rather than by
capacitance value (this is true of tantalum, OS-CON, and
other electrolytic-type capacitors).
When using low-capacity filter capacitors such as polymer
types, capacitor size is usually determined by the capacity
required to prevent V
SAG
and V
from tripping the
SOAR
undervoltage and overvoltage fault latches during load
transients in ultrasonic mode.
For low input-to-output voltage differentials (V
IN/VOUT
< 2),
additional output capacitance is required to maintain stability
and good efficiency in ultrasonic mode. The amount of
overshoot due to stored inductor energy can be calculated as:
2
V
SOAR
where I
I
PEAK
------------------------------------------------
=
2C
⋅⋅
is the peak inductor current.
PEAK
L⋅
OUTVOUT_
(EQ. 17
Input Capacitor Selection
The input capacitors must meet the input-ripple-current
(I
) requirement imposed by the switching current. The
RMS
ISL6236 dual switching regulator operates at different
frequencies. This interleaves the current pulses drawn by
the two switches and reduces the overlap time where they
add together. The input RMS current is much smaller in
comparison than with both SMPSs operating in phase. The
input RMS current varies with load and the input voltage.
The maximum input capacitor RMS current for a single
SMPS is given by:
The ESR of the input-capacitor is important for determining
capacitor power dissipation. All the power (I
RMS
2
x ESR)
heats up the capacitor and reduces efficiency. Nontantalum
chemistries (ceramic or OS-CON) are preferred due to their
low ESR and resilience to power-up surge currents. Choose
input capacitors that exhibit less than +10°C temperature
rise at the RMS input current for optimal circuit longevity.
Place the drains of the high-side switches close to each
other to share common input bypass capacitors.
Power MOSFET Selection
Most of the following MOSFET guidelines focus on the
challenge of obtaining high load-current capability (>5A)
when using high-voltage (>20V) AC adapters. Low-current
applications usually require less attention.
Choose a high-side MOSFET (Q
losses equal to the switching losses at the typical battery
voltage for maximum efficiency. Ensure that the conduction
losses at the minimum input voltage do not exceed the
package thermal limits or violate the overall thermal budget.
) that has conduction
1/Q3
Ensure that conduction losses plus switching losses at the
maximum input voltage do not exceed the package ratings
or violate the overall thermal budget.
Choose a synchronous rectifier (Q
possible r
. Ensure the gate is not pulled up by the
DS(ON)
) with the lowest
2/Q4
high-side switch turning on due to parasitic drain-to-gate
capacitance, causing cross-conduction problems. Switching
losses are not an issue for the synchronous rectifier in the
buck topology since it is a zero-voltage switched device
when using the buck topology.
MOSFET Power Dissipation
Worst-case conduction losses occur at the duty-factor
extremes. For the high-side MOSFET, the worst-case power
dissipation (PD) due to the MOSFET's r
minimum battery voltage:
V
⎛⎞
OUT_
Resistance()
PD Q
H
------------------------
⎜⎟
V
⎝⎠
IN MIN()
()2r
I
LOAD
Generally, a small high-side MOSFET reduces switching
losses at high input voltage. However, the r
to stay within package power-dissipation limits often limits
how small the MOSFET can be. The optimum situation
occurs when the switching (AC) losses equal the conduction
(r
DS(ON)
) losses.
Switching losses in the high-side MOSFET can become an
insidious heat problem when maximum battery voltage is
applied, due to the squared term in the CV
equation. Reconsider the high-side MOSFET chosen for
adequate r
at low battery voltages if it becomes
DS(ON)
extraordinarily hot when subjected to V
Calculating the power dissipation in NH (Q1/Q3) due to
switching losses is difficult since it must allow for quantifying
factors that influence the turn-on and turn-off times. These
factors include the internal gate resistance, gate charge,
threshold voltage, source inductance, and PC board layout
characteristics. The following switching-loss calculation
provides only a very rough estimate and is no substitute for
bench evaluation, preferably including verification using a
thermocouple mounted on NH (Q
For the synchronous rectifier, the worst-case power
dissipation always occurs at maximum battery voltage:
V
PD QL() 1
⎛⎞
⎜⎟
⎝⎠
OUT
--------------------------
–
V
IN MAX()
I
LOAD
2
r
⋅=
DS ON()
occurs at the
DS(ON)
⋅=
DS ON()
DS(ON)
2
f switching-loss
IN(MAX)
.
⋅⋅
I
GATE
(EQ. 19
required
(EQ. 20
(EQ. 21)
32
FN6373.6
April 29, 2010
Page 33
ISL6236
The absolute worst case for MOSFET power dissipation
occurs under heavy overloads that are greater than
I
LOAD(MAX)
but are not quite high enough to exceed the
current limit and cause the fault latch to trip. To protect
against this possibility, "overdesign" the circuit to tolerate:
I
LOADILIMIT HIGH()
where I
LIMIT(HIGH)
is the maximum valley current allowed
LIR()2⁄()I
⋅+=
LOAD MAX()
(EQ. 22)
by the current-limit circuit, including threshold tolerance and
resistance variation.
Rectifier Selection
Current circulates from ground to the junction of both
MOSFETs and the inductor when the high-side switch is off.
As a consequence, the polarity of the switching node is
negative with respect to ground. This voltage is approximately
-0.7V (a diode drop) at both transition edges while both
switches are off (dead time). The drop is I
L
x r
DS(ON)
when
the low-side switch conducts.
The rectifier is a clamp across the synchronous rectifier that
catches the negative inductor swing during the dead time
between turning the high-side MOSFET off and the
synchronous rectifier on. The MOSFETs incorporate a
high-speed silicon body diode as an adequate clamp diode if
efficiency is not of primary importance. Place a Schottky
diode in parallel with the body diode to reduce the forward
voltage drop and prevent the Q2/Q4 MOSFET body diodes
from turning on during the dead time. Typically, the external
diode improves the efficiency by 1% to 2%. Use a Schottky
diode with a DC current rating equal to one-third of the load
current. For example, use an MBR0530 (500mA-rated) type
for loads up to 1.5A, a 1N5817 type for loads up to 3A, or a
1N5821 type for loads up to 10A. The rectifier's rated
reverse breakdown voltage must be at least equal to the
maximum input voltage, preferably with a 20% derating
factor.
Applications Information
Dropout Performance
The output voltage-adjust range for continuous-conduction
operation is restricted by the nonadjustable 350ns (max)
minimum OFF-time one-shot. Use the slower 5V SMPS for
the higher of the two output voltages for best dropout
performance in adjustable feedback mode. The duty-factor
limit must be calculated using worst-case values for on - and
OFF-times, when working with low input voltages.
Manufacturing tolerances and internal propagation delays
introduce an error to the t
transient-response performance of buck regulators operated
close to dropout is poor, and bulk output capacitance must
often be added (see Equation 11 on page 31).
The absolute point of dropout occurs when the inductor
current ramps down during the minimum OFF-time
(ΔI
) as much as it ramps up during the ON-time
DOWN
K-factor. Also, keep in mind that
ON
). The ratio h = ΔIUP/ΔI
( ΔI
UP
indicates the ability to
DOWN
slew the inductor current higher in response to increased
load, and must always be greater than 1. As h approaches 1,
the absolute minimum dropout point, the inductor current is
less able to increase during each switching cycle and V
SAG
greatly increases unless additional output capacitance is
used.
A reasonable minimum value for h is 1.5, but this can be
adjusted up or down to allow trade-offs between V
SAG,
output capacitance and minimum operating voltage. For a
given value of h, the minimum operating voltage can be
calculated as:
the discharge and charge paths (see “ON-TIME ONE-SHOT
(t
)” on page 20), t
ON
OFF(MIN)
is from the “Electrical
Specifications” table, which starts on page 3 and K is taken
from Table 2. The absolute minimum input voltage is
calculated with h = 1.
Operating frequency must be reduced or h must be
increased and output capacitance added to obtain an
acceptable V
required minimum input voltage. Calculate V
if calculated V
SAG
is greater than the
IN(MIN)
to be sure
SAG
of adequate transient response if operation near dropout is
anticipated.
DROPOUT DESIGN EXAMPLE
ISL6236: With V
t
OFF(MIN)
= 350ns, V
h = 1.5, the minimum V
V
IN MIN()
----------------------------------------------
1
–
=5V, fSW= 400kHz, K = 2.25µs,
OUT2
DROP1=VDROP2
is:
IN
5V 0.1V+()
0.35μ s1.5⋅
⎛⎞
-------------------------------
⎝⎠
2.25μ s
0.1V 0.1V 6.65V=–+=
= 100mV, and
(EQ. 24)
Calculating with h = 1 yields:
V
IN MIN()
Therefore, V
5V 0.1V+()
-----------------------------------------
0.35μ s1⋅
⎛⎞
--------------------------
1
–
⎝⎠
2.25μ s
must be greater than 6.65V. A practical input
IN
0.1V 0.1V 6.04V=–+=
(EQ. 25)
voltage with reasonable output capacitance would be 7.5V.
PC Board Layout Guidelines
Careful PC board layout is critical to achieve minimal switching
losses and clean, stable operation. This is especially true when
multiple converters are on the same PC board where one
circuit can affect the other. Refer to the ISL6236 Evaluation Kit
Application Notes (AN1271 and AN1272) for a specific layout
example.
33
FN6373.6
April 29, 2010
Page 34
ISL6236
Mount all of the power components on the top side of the board
with their ground terminals flush against one another, if
possible. Follow these guidelines for good PC board layout:
• Isolate the power components on the top side from the
sensitive analog components on the bottom side with a
ground shield. Use a separate PGND plane under the
OUT1 and OUT2 sides (called PGND1 and PGND2). Avoid
the introduction of AC currents into the PGND1 and PGND2
ground planes. Run the power plane ground currents on the
top side only, if possible.
• Use a star ground connection on the power plane to
minimize the crosstalk between OUT1 and OUT2.
• Keep the high-current paths short, especially at the
ground terminals. This practice is essential for stable,
jitter-free operation.
• Keep the power traces and load connections short. This
practice is essential for high efficiency. Using thick copper
PC boards (2oz vs 1oz) can enhance full-load efficiency
by 1% or more. Correctly routing PC board traces must be
approached in terms of fractions of centimeters, where a
single mΩ of excess trace resistance causes a
measurable efficiency penalty.
• PHASE (ISL6236) and GND connections to the
synchronous rectifiers for current limiting must be made
using Kelvin-sense connections to guarantee the
current-limit accuracy with 8 Ld SO MOSFETs. This is best
done by routing power to the MOSFETs from outside using
the top copper layer, while connecting PHASE traces
inside (underneath) the MOSFETs.
• When trade-offs in trace lengths must be made, it is
preferable to allow the inductor charging path to be made
longer than the discharge path. For example, it is better to
allow some extra distance between the input capacitors
and the high-side MOSFET than to allow distance
between the inductor and the synchronous rectifier or
between the inductor and the output filter capacitor.
• Ensure that the OUT connection to COUT is short and
direct. However, in some cases it may be desirable to
deliberately introduce some trace length between the OUT
connector node and the output filter capacitor.
• Route high-speed switching nodes (BOOT, UGATE,
PHASE, and LGATE) away from sensitive analog areas
(REF, ILIM, and FB). Use PGND1 and PGND2 as an EMI
shield to keep radiated switching noise away from the IC's
feedback divider and analog bypass capacitors.
• Make all pin-strap control input connections (SKIP
, ILIM,
etc.) to GND or VCC of the device.
Layout Procedure
Place the power components first with ground terminals
adjacent (Q
these connections on the top layer with wide, copper-filled
areas.
Mount the controller IC adjacent to the synchronous rectifier
MOSFETs close to the hottest spot, preferably on the back
side in order to keep UGATE, GND, and the LGATE gate
drive lines short and wide. The LGATE gate trace must be
short and wide, measuring 50 mils to 100 mils wide if the
MOSFET is 1” from the controller device.
Group the gate-drive components (BOOT capacitor, VIN
bypass capacitor) together near the controller device.
Make the DC/DC controller ground connections as follows:
1. Near the device, create a small analog ground plane.
2. Connect the small analog ground plane to GND and use
the plane for the ground connection for the REF and VCC
bypass capacitors, FB dividers and ILIM resistors (if any).
3. Create another small ground island for PGND and use
the plane for the VIN bypass capacitor, placed very close
to the device.
4. Connect the GND and PGND planes together at the
metal tab under device.
On the board's top side (power planes), make a star ground
to minimize crosstalk between the two sides. The top-side
star ground is a star connection of the input capacitors and
synchronous rectifiers. Keep the resistance low between the
star ground and the source of the synchronous rectifiers for
accurate current limit. Connect the top-side star ground
(used for MOSFET, input, and output capacitors) to the small
island with a single short, wide connection (preferably just a
via). Create PGND islands on the layer just below the
topside layer (refer to the ISL6236 Evaluation Kit Application
Notes, AN1271 and AN1272) to act as an EMI shield if
multiple layers are available (highly recommended). Connect
each of these individually to the star ground via, which
connects the top side to the PGND plane. Add one more
solid ground plane under the device to act as an additional
shield, and also connect the solid ground plane to the star
ground via.
Connect the output power planes (VCORE and system
ground planes) directly to the output filter capacitor positive
and negative terminals with multiple vias.
source, CIN, C
2/Q4
). If possible, make all
OUT
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Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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34
FN6373.6
April 29, 2010
Page 35
Package Outline Drawing
L32.5x5B
32 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE
Rev 2, 11/07
5.00
6
PIN 1
INDEX AREA
ISL6236
4X
3.5
0.50
A
B
25
24
28X
32
6
PIN #1 INDEX AREA
1
(4X)0.15
( 4. 80 TYP )
TOP VIEW
( 3. 30 )
TYPICAL RECOMMENDED LAND PATTERN
5.00
( 28X 0 . 5 )
(32X 0 . 23 )
( 32X 0 . 60)
0 . 90 ± 0.1
17
16
32X 0.40 ± 0.104
C
BOTTOM VIEW
SIDE VIEW
0 . 2 REF
0 . 00 MIN.
0 . 05 MAX.
DETAIL "X"
9
5
3 .30 ± 0 . 15
8
M0.10 C B
32X 0.23
SEE DETAIL "X"
0.10
BASE PLANE
A
+ 0.07
- 0.05
C
C
SEATING PLANE
0.08 C
35
NOTES:
Dimensions are in millimeters.1.
Dimensions in ( ) for Reference Only.
2.
Dimensioning and tolerancing conform to AMSE Y14.5m-1994.