Datasheet IS93C66-3PI, IS93C66-3P, IS93C66-3GRI, IS93C66-3GI, IS93C66-3G Datasheet (ISSI)

®

IS93C66-3

4,096-BIT SERIAL ELECTRICALLY
ERASABLE PROM

FEATURES

• State-of-the-art architecture
— Non-volatile data storage
— Low voltage operation:

3.0V (Vcc = 2.7V to 6.0V)
— Full TTL compatible inputs and outputs
— Auto increment for efficient data dump

• Low voltage read operation
— Down to 2.7V

• Hardware and software write protection
— Defaults to write-disabled state at power-up
— Software instructions for write-enable/disable

2

• Advanced low voltage CMOS E
technology

• Versatile, easy-to-use interface
— Self-timed programming cycle
— Automatic erase-before-write
— Programming status indicator
— Word and chip erasable
— Stop SK anytime for power savings

• Durable and reliable
— 10-year data retention after 100K write cycles
— 100,000 write cycles
— Unlimited read cycles

PROM

OVERVIEW

The IS93C66-3 is a low cost 4,096-bit, non-volatile, serial
E2PROM. It is fabricated using ISSI's advanced CMOS
E2PROM technology. The IS93C66-3 provides efficient
non-volatile read/write memory arranged as 256 registers
of 16 bits each. Seven 11-bit instructions control the
operation of the device, which includes read, write, and
mode enable functions. The data out pin (DOUT) indicates
the status of the device during in the self-timed non-volatile
programming cycle.

The self-timed write cycle includes an automatic erase­before-write capability. To protect against inadvertent
writes, the WRITE instruction is accepted only while the
chip is in the write enabled state. Data is written in 16 bits
per write instruction into the selected register. If Chip
Select
the Data Output (DOUT) pin will indicate the
status of the chip.

APPLICATIONS

The IS93C66-3 is ideal for high-volume applications
requiring low power and low density storage. This device
uses a low cost, space saving 8-pin package. Candidate
applications include robotics, alarm devices, electronic
locks, meters and instrumentation settings.

(CS)

is brought

ISSI

MARCH 2001

HIGH

after initiation of the write cycle,

READY/BUSY

FUNCTIONAL BLOCK DIAGRAM

DATA

REGISTER

D

IN

CS

SK

ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. G

04/26/01

INSTRUCTION

REGISTER

(11 BITS)

INSTRUCTION

DECODE,

CONTROL,

AND

CLOCK

GENERATION

(16 BITS)

ADDRESS

REGISTER

WRITE

ENABLE

DUMMY

BIT

R/W

AMPS

1 OF 256

DECODER

HIGH VOLTAGE

GENERATOR

EEPROM

(256 X 16)

ARRAY

D

OUT

1

IS93C66-3

®

ISSI

PIN CONFIGURATION

8-Pin DIP

8

VCC

7

NC

6

NC

5

GND

D

CS
SK

D

OUT

1
2
3

IN

4

PIN DESCRIPTIONS

CS Chip Select
SK Serial Data Clock
DIN Serial Data Input
DOUT Serial Data Output
NC Not Connected
Vcc Power
GND Ground

PIN CONFIGURATION

8-Pin

JEDEC

NC

VCC

CS

SK

Small Outline

1
2
3
4

8
7
6
5

“G”

NC
GND
D

OUT

D

IN

PIN CONFIGURATION

8-Pin

D

CS
SK

D

OUT

JEDEC

IN

Small Outline

1
2
3
4

8
7
6
5

“GR”

VCC
NC
NC
GND

ENDURANCE AND DATA RETENTION

The IS93C66-3 is designed for applications requiring up
to 100,000 programming cycles (WRITE, WRALL, ERASE
and ERAL). It provides 10 years of secure data retention,
without power after the execution of 100,000 programming
cycles.

DEVICE OPERATION

The IS93C66-3 is controlled by seven 11-bit instructions.
Instructions are clocked in (serially) on the DIN pin. Each
instruction begins with a logical “1” (the start bit). This is
followed by the opcode (2 bits), the address field (8 bits),
and data, if appropriate. The clock signal (SK) may be
halted at any time and the IS93C66-3 will remain in its last
state. This allows full static flexibility and maximum
power conservation.

Read (READ)

The READ instruction is the only instruction that outputs
serial data on the DOUT pin. After the read instruction and
address have been decoded, data is transferred from the
selected memory register into a 16-bit serial shift register.
(Please note that one logical “0” bit precedes the actual
16-bit output data string.) The output on DOUT changes
during the low-to-high transitions of SK (see Figure 3).

Low Voltage Read

The IS93C66-3 has been designed to ensure that data
read operations are reliable in low voltage environments.
The IS93C66-3 is guaranteed to provide accurate data
during read operations with Vcc as low as 2.7V.

Auto Increment Read Operations

In the interest of memory transfer operation applications,
the IS93C66-3 has been designed to output a continuous
stream of memory content in response to a single read
operation instruction. To utilize this function, the system
asserts a read instruction specifying a start location
address. Once the 16 bits of the addressed word have
been clocked out, the data in consecutively higher address
locations (the address
dress of

“111111"

) is output. The address will wrap around
continuously with
control pin is brought

“000000”

CS HIGH

LOW

. This allows for single instruction

is assumed as the ad-

until the chip select

(CS)

data dumps to be executed with a minimum of firmware
overhead.

Write Enable (WEN)

The write enable (WEN) instruction must be executed
before any device programming (WRITE, WRALL, ERASE,
and ERAL) can be done. When Vcc is applied, this device
powers up in the write disabled state. The device then

2

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. G

04/26/01

IS93C66-3

®

ISSI

remains in a write disabled state until a WEN instruction
is executed. Thereafter, the device remains enabled until
a WDS instruction is executed or until Vcc is removed.
(NOTE: Neither the WEN nor the WDS instruction has any
effect on the READ instruction.) (See Figure 4.)

Write (WRITE)

The WRITE instruction includes 16 bits of data to be
written into the specified register. After the last data bit
has been applied to DIN, and before the next rising edge of
SK, CS must be brought LOW. The falling edge of CS
initiates the self-timed programming cycle.

After a minimum wait of 250 ns (5V operation) from the
falling edge of CS (tCS), if CS is brought HIGH, DOUT will
indicate the READY/BUSY status of the chip: logical “0”
means programming is still in progress; logical “1” means
the selected register has been written, and the part is
ready for another instruction (see Figure 5). (NOTE: The
combination of CS HIGH, DIN HIGH and the rising edge of
the SK clock, resets the READY/BUSY flag. Therefore, it
is important if you want to access the READY/BUSY flag
not to reset it through this combination of control signals.)
Before a WRITE instruction can be executed, the device
must be write enabled (see WEN).

Write All (WRALL)

The write all (WRALL) instruction programs all registers
with the data pattern specified in the instruction. While the
WRALL instruction is being loaded, the address field
becomes a sequence of “Don’t Care” bits (see Figure 6).

As with the WRITE instruction, if CS is brought HIGH after
a minimum wait of 250 ns (tCS), the DOUT pin indicates the
READY/BUSY status of the chip (see Figure 6).

rite Disable (WDS)

W

The write disable (WDS) instruction disables all
programming capabilities. This protects the entire part
against accidental modification of data until a WEN
instruction is executed. (When Vcc is applied, this part
powers up in the write disabled state.) To protect data, a
WDS instruction should be executed upon completion of
each programming operation. (NOTE: Neither the WEN
nor the WDS instruction has any effect on the READ
instruction.) (See Figure 7.)

Erase Register (ERASE)

After the erase instruction is entered, CS must be brought
LOW. The falling edge of CS initiates the self-timed
internal programming cycle. Bringing CS HIGH after a
minimum of tCS, will cause DOUT to indicate the
status of the chip: a logical “0” indicates programming is
still in progress; a logical “1” indicates the erase cycle is
complete and the part is ready for another instruction (see
Figure 8).

READ/BUSY

Erase All (ERAL)

Full chip erase is provided for ease of programming.
Erasing the entire chip involves setting all bits in the entire
memory array to a logical “1” (see Figure 9).

INSTRUCTION SET

Instruction Start Bit OP Code Address Input Data

READ 1 10 (A7-A0)
WEN 1 00 11XXXXXX

(Write Enable)
WRITE 1 01 (A7-A0) D15-D0
WRALL 1 00 01XXXXXX D15-D0

(Write All Registers)

WDS 1 00 00XXXXXX
(Write Disable)

ERASE 1 11 (A7-A0)
ERAL 1 00 10XXXXXX

(Erase All Registers)

Note: 1. If input data is not 16 bits exactly, the last 16 bits will be taken as input data (a word).

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. G

04/26/01

(1)

(1)

3

IS93C66-3

®

ISSI

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

VGND Voltage with Respect to GND –0.3 tp +6.5 V
TBIAS Temperature Under Bias (IS93C46-3) 0 to +70 °C
TBIAS Temperature Under Bias (IS93C46-3I) –40 to +85 °C
TSTG Storage Temperature –65 to +125 °C

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.

(1)

OPERATING RANGE

Range Ambient Temperature VCC

Commercial 0°C to +70°C 2.7V to 6.0V
Industrial –40°C to +85°C 2.7V to 6.0V

CAPACITANCE

Symbol Parameter Conditions Max. Unit

CIN Input Capacitance VIN = 0V 5 pF
COUT Output Capacitance VOUT = 0V 5 pF

FIGURE 1. AC TEST CONDITIONS

+2.08V

800Ω

D

OUT

100 pF

Vcc = 5.0V

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Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. G

04/26/01

®

IS93C66-3

ISSI

DC ELECTRICAL CHARACTERISTICS

TA = 0°C to +70°C for IS93C66-3 and –40°C to +85°C for IS93C66-3I.

Symbol Parameter Test Conditions Vcc Min. Max. Unit

VOL Output LOW Voltage IOL = 10 µA CMOS 2.7V to 3.3V — 0.2 V
VOL1 Output LOW Voltage IOL = 2.1 mA TTL 4.5V to 5.5V — 0.4 V
VOH Output HIGH Voltage IOH = –10 µA CMOS 2.7V to 3.3V VCC – 0.2 — V
VOH1 Output HIGH Voltage IOH = –400 µA TTL 4.5V to 5.5V 2.4 — V
VIH Input HIGH Voltage 2.7V to 3.3V 2.4 VCC V

4.5V to 5.5V 2 VCC

VIL Input LOW Voltage 2.7V to 3.3V –0.1 0.6 V

4.5V to 5.5V –0.1 0.8
ILI Input Leakage VIN = 0V to VCC (CS, SK, DIN)11µA
ILO Output Leakage VOUT = 0V to VCC, CS = 0V 1 1 µA

POWER SUPPLY CHARACTERISTICS

TA = 0°C to +70°C for IS93C66-3 and –40°C to +85°C for IS93C66-3I.

IS93C66-3 IS93C66-3I

Symbol Parameter Test Conditions Vcc Mi n. Typ. Max. Min. Typ. Max. Unit

ICC Vcc Operating CS = VIH, SK = 1 MHz 2.7V to 3.3V — 0.5 2 — 0.5 2 mA

Supply Current CMOS Input Levels

ICC Vcc Operating CS = VIH, SK = 1 MHz 4.5V to 5.5V — 46 — 46 mA

Supply Current CMOS Input Levels

ISB Standby Current CS = DIN = SK = 0V 2.7V to 3.3V — 210 — 210 µA

4.5V to 5.5V — 10 50 — 10 50

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. G

04/26/01

5

IS93C66-3

ISSI

AC ELECTRICAL CHARACTERISTICS

TA = 0°C to +70°C for IS93C66-3 and –40°C to +85°C for IS93C66-3.

IS93C66-3 IS93C66-3I

Symbol Parameter Test Conditions Vcc Min. Max. Min. Max. Unit

SK SK Clock Frequency 2.7V to 6.0V 0 1 0 1 MHz

f

4.5V to 6.0V 0 1 0 1 MHz

tSKH SK HIGH Time 2.7V to 6.0V 500 — 500 — ns

4.5V to 6.0V 250 — 250 —

SKL SK LOW Time 2.7V to 6.0V 1 — 1 — µs

t

4.5V to 6.0V 250 — 250 — ns

t

CS Minimum CS LOW Time 2.7V to 6.0V 500 — 500 — ns

4.5V to 6.0V 250 — 250 —

tCSS CS Setup Time Relative to SK 2.7V to 6.0V 100 — 100 — ns

4.5V to 6.0V 50 — 50 — ns

tDIS DIN Setup Time Relative to SK 2.7V to 6.0V 200 — 200 — ns

4.5V to 6.0V 100 — 100 — ns

®

tCSH CS Hold Time Relative to SK 2.7V to 6.0V 0 — 0 — ns

4.5V to 6.0V 0 — 0 —

tDIH DIN Hold Time Relative to SK 2.7V to 6.0V 400 — 400 — ns

4.5V to 6.0V 100 — 100 —

tPD1 Output Delay to “1” AC Test 2.7V to 6.0V — 500 — 500 ns

4.5V to 6.0V — 500 — 500

tPD0 Output Delay to “0” AC Test 2.7V to 6.0V — 500 — 500 ns

4.5V to 6.0V — 500 — 500

tSV CS to Status Valid AC Test, CL = 100 pF 2.7V to 6.0V — 500 — 500 ns

4.5V to 6.0V — 500 — 500

tDF CS to DOUT in 3-state CS = VIL 2.7V to 6.0V — 200 — 200 ns

4.5V to 6.0V — 100 — 100

tWP Write Cycle Time 2.7V to 6.0V — 10 — 10 ms

4.5V to 6.0V — 10 — 10

6

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. G

04/26/01

IS93C66-3

AC WAVEFORMS

FIGURE 2. SYNCHRONOUS DATA TIMING

®

ISSI

CS

tCSS tSKL tCSH

SK

tDIS tDIH

DIN

DOUT

(READ)

OUT

D

(WRITE)
(WRALL)
(ERASE)

(ERAL)

tSV

FIGURE 3. READ CYCLE TIMING

tSKH

tPD0

T

tPD1 tDF

tDF

STATUS VALID

CS

SK

D

IN

D

OUT

*

Address Pointer Cycles to the Next Register

110A5 A0

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. G

04/26/01

D15 D0

0

t

CS

*

7

IS93C66-3

FIGURE 4. SYNCHRONOUS DATA TIMING

CS

SK

D

IN

DOUT = 3-state

FIGURE 5. WRITE (WRITE) CYCLE TIMING

1100 1

®

ISSI

tCS

CS

SK

D

IN

D

OUT

110A5A0

FIGURE 6. WRITE ALL (WRALL) TIMING

CS

SK

t

CS

D15 D0

t

SV

BUSY READY

t

WP

tCS

t

DF

D

DOUT

IN

110

00

8

D15 D0

tSV

BUSY READY

tWP

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. G

04/26/01

IS93C66-3

FIGURE 7. WRITE DISABLE (WDS) CYCLE TIMING

t

CS

CS

SK

®

ISSI

D

IN

100

00

DOUT = 3-STATE

FIGURE 8. ERASE (REGISTER ERASE) CYCLE TIMING

SK

t

CS

CS

D

IN

D

OUT

111A4

A5

A0

t

SV

BUSY READY

t

WP

t

DF

FIGURE 9. ERASE ALL (ERAL) CYCLE TIMING

SK

t

CS

CS

D

IN

D

OUT

Note for Figures 8 and 9:

After the completion of the instruction (D
indicates BUSY status) then performs another instruction would cause device malfunction.

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. G

04/26/01

010

OUT is in READY status) then it may perform another instruction. If device is in BUSY status (DOUT

10

t

SV

BUSY READY

t

WP

t

DF

9

IS93C66-3

®

ISSI

ORDERING INFORMATION
Commercial Range: 0°C to +70°C

Speed (MHz) Order Part No. Package

1 IS93C66-3P 300-mil Plastic DIP
1 IS93C66-3G Small Outline (JEDEC)
1 IS93C66-3GR Small Outline (JEDEC)

Industrial Range: –40°C to +85°C

Speed (MHz) Order Part No. Package

1 IS93C66-3PI 300-mil Plastic DIP
1 IS93C66-3GI Small Outline (JEDEC)
1 IS93C66-3GRI Small Outline (JEDEC)

10

®

ISSI

Integrated Silicon Solution, Inc.

2231 Lawson Lane

Santa Clara, CA 95054

Tel: [phone]

Fax: [phone]

E-mail: [e-mail]

www.issi.com

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. G

04/26/01