Datasheet IS733H Datasheet (ISOCOM)

IS733H

A.C. INPUT PHOTOTRANSISTOR

OPTICALL Y COUPLED

ISOLAT ORS

APPROVALS

l UL recognised, File No. E91231

'X' SPECIFICATION APPROVALS

l VDE 0884 approval pending

l EN60950 approval pending

DESCRIPTION

The IS733H optically coupled isolator consists
of two infrared light emitting diodes connected
in inverse parallel and NPN silicon photo
transistor in a standard 6 pin dual in line plastic
package.

ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)

FEATURES

l Options :-

10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.

l High Isolation Voltage (5.3kV

l AC or polarity insensitive input

l All electrical parameters 100% tested

l Custom electrical selections available

RMS

,7.5kV

APPLICATIONS

l Computer terminals

l Industrial systems controllers

l Telephone sets, Telephone exchangers

l Signal transmission between systems of

different potentials and impedances

PK

Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C

INPUT DIODE

)

Forward Current ±150mA
Peak forward current ±1A
Power Dissipation 230mW

OUTPUT TRANSISTOR

Collector-emitter Voltage BV
Collector-base Voltage BV
Emitter-collector Voltage BV
Emitter-base Voltage BV
Power Dissipation 160mW

CEO

CBO

ECO

EBO

POWER DISSIPATION

Total Power Dissipation 320mW
(derate linearly 4.27mW/°C above 25°C)

35V
35V
6V
6V

ISOCOM COMPONENTS LTD

Unit 25B, Park View Road West,

Park View Industrial Estate, Brenda Road

Hartlepool, Cleveland, TS25 1YD

Tel: [phone] Fax :[phone]

9/6/97

ISOCOM INC

720 E., Park Boulevard, Suite 104,

Plano, TX 75074 USA

Tel: [phone]

Fax: [phone]

DB92067-AAS/A1

ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )

PARAMETER MIN TYP MAX UNITS TEST CONDITION

Input Forward Voltage (VF) 1.2 1.4 V IF = ±20mA

Output Collector-emitter Breakdown (BV

( note 2 )

Collector-base Breakdown (BV
Emitter-base Breakdown (BV
Emitter-collector Breakdown (BV
Collector-emitter Dark Current (I

)35 V IC = 1mA

CEO

)35 V I

CBO

)6 V I

EBO

)6 V IE = 100µA

ECO

) 100 nA VCE = 20V

CEO

C
E

= 100µA
= 100µA

Coupled Current Transfer Ratio (CTR) (note 2 ) 15 30 0 % ±1mAIF , 5V V

Collector-emitter Saturation VoltageV

Input to Output Isolation Voltage V

CE(SAT)

ISO

5300 V
7500 V

Input-output Isolation Resistance R

ISO

5x10

10

Output Rise Time tr 4 18 µsV
Output Fall Time tf 3 18 µsI

0.2 V ±20mAIF , 1mAI

RMS
PK

Ω V

See note 1
See note 1

= 500V (note 1)

IO

= 2V ,

CE

= 2mA, RL = 100Ω

C

CE

C

Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.

9/6/97

DB92067-AAS/A2

Collector Power Dissipation vs. Ambient Temperature

200

(mW)

C

150

(V)

CE(SAT)

Collector-emitter Saturation

Voltage vs. Forward Current

6
5

2mA

=1mA

Ic

8mA

TA = 25°C

5mA

3mA

4

100

50

Collector power dissipation P

0

-30 0 25 50 75 100 125
Ambient temperature TA ( °C )

Forward Current vs. Ambient Temperature

60

50

40

(±mA)

F

30

20

3

2

1

0

Collector-emitter saturation voltage V

0 5 10 15

Forward current IF (±mA)

Collector Current vs. Collector-emitter Voltage

50

40

(mA)

C

30

±50

±30

±20

TA = 25°C

±15

20

±10

Forward current I

10

0

-30 0 25 50 75 100 125
Ambient temperature TA ( °C )

Collector-emitter Saturation

(V)

0.14

CE(SAT)

0.12

Voltage vs. Ambient Temperature

IF = ±20mA

0.10

IC = 1mA

0.08

0.06

0.04

0.02
0

Collector-emitter saturation voltage V

-30 0 25 50 75 100
Ambient temperature TA ( °C )

Collector current I

10

IF = ±5mA

0

0 2 4 6 8 10

Collector-emitter voltage VCE ( V )

Current Transfer Ratio vs. Forward Current

320
280

240

200
160
120

80
40

Current transfer ratio CTR (%)

VCE = 5V
TA = 25°C

0

1 2 5 10 20 50

Forward current IF (±mA)

9/6/97

DB92067-AAS/A2