Datasheet IS61SP12836-5TQ, IS61SP12836-166TQ, IS61SP12836-117B, IS61SP12836-117TQ Datasheet (ICSI)

IS61SP12836
128K x 36 SYNCHRONOUS PIPELINED STATIC RAM
FEATURES
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and control
• Pentium™ or linear burst sequence control using MODE input
• Three chip enables for simple depth expansion and address pipelining
• Common data inputs and data outputs
• JEDEC 100-pin LQFP and 119-pin PBGA package
• Single +3.3V, +10%, –5% power supply
• Power-down snooze mode
DESCRIPTION
The ICSI IS61SP12836 is a high-speed, low-power synchro­nous static RAM designed to provide a burstable, high-perfor­mance, secondary cache for the i486™, Pentium™, 680X0™, and PowerPC™ microprocessors. It is organized as 131,072 words by 36 bits, fabricated with ICSI's advanced CMOS technology. The device integrates a 2-bit burst counter, high­speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input.
Write cycles are internally self-timed and are initiated by the rising edge of the clock input. Write cycles can be from one to four bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be written.
BW1 controls DQa, BW2 controls DQb, BW3 controls DQc, BW4 controls DQd, conditioned by BWE being LOW. A LOW
on GW input would cause all bytes to be written.
Bursts can be initiated with either ADSP (Address Status Processor) or ADSC (Address Status Cache Controller) input pins. Subsequent burst addresses can be generated internally by the IS61SP12836 and controlled by the ADV (burst address advance) input pin.
The mode pin is used to select the burst sequence order, Linear burst is achieved when this pin is tied LOW. Interleave burst is achieved when this pin is tied HIGH or left floating.
FAST ACCESS TIME
Symbol Parameter -166 -150 -133 -117 -5 Units
tKQ Clock Access Time 3.5 3.8 4 4 5 ns tKC Cycle Time 6 6.7 7.5 8.5 10 ns
Frenquency 166 150 133 117 100 MHz
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
Integrated Circuit Solution Inc. 1
SSR012-0B
IS61SP12836
BLOCK DIAGRAM
CLK
ADV
ADSC ADSP
CLK
BINARY
COUNTER
CE
CLR
Q0
Q1
MODE
A0
A1
A0’
A1’
128K x 36 MEMORY
ARRAY
A16-A0
GW
BWE BW4
BW3
BW2
BW1
17
D
Q
15 17
ADDRESS
REGISTER
CE
CLK
D
DQd
Q
36
36
BYTE WRITE
REGISTERS
CLK
D
DQc
Q
BYTE WRITE
REGISTERS
CLK
D
DQb
Q
BYTE WRITE
REGISTERS
CLK
DQa
Q
D
BYTE WRITE
REGISTERS
CLK
CE CE2 CE2
D
ENABLE
REGISTER
CE
CLK
D
Q
Q
4
REGISTERS
INPUT
CLK
OUTPUT
REGISTERS
CLK
OE
36
DQ[35:0]
ENABLE
DELAY
REGISTER
CLK
OE
2 Integrated Circuit Solution Inc.
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IS61SP12836
PIN CONFIGURATION
119-pin PBGA (Top View) and 100-Pin LQFP
1 2 3 4 5 6 7
A
VCCQ
B
NC
C
NC
D
DQc1
E
DQc2
F
VCCQ
G
DQc5
H
DQc7
J
VCCQ
K
DQd1
L
DQd4
M
VCCQ
N
DQd6
P
DQd8
R
NC
T
NC
U
VCCQ
A6
CE2
A7
NC
DQc3
DQc4
DQc6
DQc8
VCC
DQd2
DQd3
DQd5
DQd7
NC
A5
NC
NC
A4
A3
A2
GND
GND
GND
BW3
GND
NC
GND
BW4
GND
GND
GND
MODE
A10
NC
ADSP
ADSC
VCC
NC
CE
OE
ADV
GW
VCC
CLK
NC
BWE
A1
A0
VCC
A11
NC
A8
A9
A12
GND
GND
GND
BW2
GND
NC
GND
BW1
GND
GND
GND
NC
A14
NC
A16
CE2
A15
NC
DQb6
DQb5
DQb4
DQb2
VCC
DQa7
DQa5
DQa4
DQa3
NC
A13
NC
NC
VCCQ
NC
NC
DQb8
DQb7
VCCQ
DQb3
DQb1
VCCQ
DQa8
DQa6
VCCQ
DQa2
DQa1
NC
ZZ
VCCQ
DQPc
DQc1 DQc2
VCCQ
GND DQc3 DQc4 DQc5 DQc6
GND
VCCQ
DQc7 DQc8
NC
VCC
NC
GND
DQd1 DQd2
VCCQ
GND
DQd3 DQd4 DQd5 DQd6
GND
VCCQ
DQd7 DQd8 DQPd
A6A7CE
CE2
BW4
BW3
BW2
BW1
CE2
VCC
GND
CLKGWBWEOEADSC
99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
100 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45
A5A4A3A2A1
MODE
A0
NC
NC
VCC
GND
NC
NC
A10
46 47 48 49 50
A11
A12
ADSP
ADVA8A9
A13
A14
A15
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
A16
DQPb DQb8 DQb7 VCCQ GND DQb6 DQb5 DQb4 DQb3 GND VCCQ DQb2 DQb1 GND NC VCC ZZ DQa8 DQa7 VCCQ GND DQa6 DQa5 DQa4 DQa3 GND VCC DQa2 DQa1 DQPa
PIN DESCRIPTIONS
A0, A1 Synchronous Address Inputs. These
pins must tied to the two LSBs of the address bus.
A2-A16 Synchronous Address Inputs
CLK Synchronous Clock ADSP Synchronous Processor Address
Status
ADSC Synchronous Controller Address
Status
ADV Synchronous Burst Address Advance BW1-BW4 Synchronous Byte Write Enable BWE Synchronous Byte Write Enable
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GW Synchronous Global Write Enable CE, CE2, CE2 Synchronous Chip Enable OE Output Enable
DQa-DQd Synchronous Data Input/Output
MODE Burst Sequence Mode Selection
VCC +3.3V Power Supply
GND Ground
VCCQ Isolated Output Buffer Supply: +3.3V
ZZ Snooze Enable
GNDQ Isolated Output Buffer Ground
DQPa-DQPd Parity Data I/O
IS61SP12836
TRUTH TABLE
Address
Operation Used
Deselected, Power-down None H X X X L X X X High-Z Deselected, Power-down None L X H L XXXXHigh-Z Deselected, Power-down None L L X L XXXXHigh-Z Deselected, Power-down None X X H H L X X X High-Z Deselected, Power-down None X 0 X H L X X X High-Z Read Cycle, Begin Burst External L H L L XXXXHigh-Z Read Cycle, Begin Burst External L H L H 0 X Read X High-Z Write Cycle, Begin Burst External L H L H L X Write X High-Z Read Cycle, Continue Burst Next X X X H H L Read L Q Read Cycle, Continue Burst Next X X X H H L Read H High-Z Read Cycle, Continue Burst Next H X X X H L Read L Q Read Cycle, Continue Burst Next H X X X H L Read H High-Z Write Cycle, Continue Burst Next X X X H H L Write X High-Z Write Cycle, Continue Burst Next H X X X H L Write X High-Z Read Cycle, Suspend Burst Current X X X H H H Read L Q Read Cycle, Suspend Burst Current X X X H H H Read H High-Z Read Cycle, Suspend Burst Current H X X X H H Read L Q Read Cycle, Suspend Burst Current H X X X H H Read H High-Z Write Cycle, Suspend Burst Current X X X H H H Write X High-Z Write Cycle, Suspend Burst Current H X X X H H Write X High-Z
CECE
CE CE2
CECE
CE2CE2
CE2
CE2CE2
ADSPADSP
ADSP
ADSPADSP
ADSCADSC
ADSC
ADSCADSC
ADVADV
ADV
ADVADV
WRITEWRITE
WRITE
WRITEWRITE
OEOE
OE DQ
OEOE
PARTIAL TRUTH TABLE
Function
Read H H X X X X Read H L H H H H Write Byte 1 H L L H H H Write All Bytes H LLLLL Write All Bytes L XXXXX
4 Integrated Circuit Solution Inc.
GWGW
GW
GWGW
BWEBWE
BWE
BWEBWE
BW1BW1
BW1
BW1BW1
BW2BW2
BW2
BW2BW2
BW3BW3
BW3
BW3BW3
BW4BW4
BW4
BW4BW4
SSR012-0B
IS61SP12836
INTERLEAVED BURST ADDRESS TABLE (MODE = VCCQ or No Connect)
External Address 1st Burst Address 2nd Burst Address 3rd Burst Address
A1 A0 A1 A0 A1 A0 A1 A0
00 01 10 11 01 00 11 10 10 11 00 01 11 10 01 00
LINEAR BURST ADDRESS TABLE (MODE = GNDQ)
0,0
0,1A1, A0 = 1,1
1,0
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
TBIAS Temperature Under Bias –40 to +85 °C TSTG Storage Temperature –55 to +150 °C PD Power Dissipation 1.6 W IOUT Output Current (per I/O) 100 mA VIN, VOUT Voltage Relative to GND for I/O Pins –0.5 to VCCQ + 0.3 V VIN Voltage Relative to GND for –0.5 to VCC + 0.5 V
for Address and Control Inputs
VCC Voltage on Vcc Supply Relatiive to GND –0.5 to 4.6 V
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. This device contains circuity to protect the inputs against damage due to high static voltages or electric fields; however, precautions may be taken to avoid application of any voltage higher than maximum rated voltages to this high-impedance circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
(1)
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IS61SP12836
OPERATING RANGE
Range Ambient Temperature VCC
Commercial 0°C to +70°C 3.3V, +10%, –5%
Industrial –40°C to +85°C 3.3V, +10%, –5%
DC ELECTRICAL CHARACTERISTICS
(1)
(Over Operating Range)
Symbol Parameter Test Conditions Min. Max. Unit
VOH Output HIGH Voltage IOH = –4.0 mA 2.4 V
VOL Output LOW Voltage IOL = 8.0 mA 0.4 V
VIH Input HIGH Voltage 2.0 VCCQ + 0.3 V
VIL Input LOW Voltage –0.3 0.8 V
I
LI Input Leakage Current GND < VIN < VCCQ
(2)
Com. –2 2 µA
Ind. –5 5
LO Output Leakage Current GND < VOUT < VCCQ, OE = VIH Com. –2 2 µA
I
Ind. –5 5
POWER SUPPLY CHARACTERISTICS (Over Operating Range)
-166 -150 -133 -117 -5
Symbol Parameter Test Conditions
ICC AC Operating Device Selected, Com. 200 230 190 220 180 210 175 205 170 200 mA
Supply Current All Inputs = VIL or VIH Ind. 200 230 190 220 185 215 180 210 mA
OE = VIH, Vcc = Max. Cycle Time > tKC min.
ISB Standby Current Device Deselected, Com. 45 70 45 70 45 70 45 65 45 65 mA
VCC = Max., Ind. 50 80 50 80 50 75 50 75 mA All Inputs = VIH or VIL CLK Cycle Time > tKC min.
Typ. Max. Typ. Max. Typ. Max. Typ. Max Typ. Max. Uni
t
IZZ Power-down Mode ZZ = VCCQ Com. 5 5 5 5 5 mA
Current Clock Running Ind. 15 15 15 15 15 mA
All Inputs < GND + 0.2V or > Vcc – 0.2V
Notes:
1. The MODE pin has an internal pullup. This pin may be a No Connect, tied to GND, or tied to V
2. The MODE pin should be tied to Vcc or GND. It exhibits ±10 µA maximum leakage current when tied to or
> Vcc – 0.2V.
CCQ.
< GND + 0.2V
6 Integrated Circuit Solution Inc.
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IS61SP12836
CAPACITANCE
(1,2)
Symbol Parameter Conditions Max. Unit
CIN Input Capacitance VIN = 0V 5 pF
COUT Input/Output Capacitance VOUT = 0V 8 pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A = 25°C, f = 1 MHz, Vcc = 3.3V.
AC TEST CONDITIONS
Parameter Unit
Input Pulse Level 0V to 3.0V Input Rise and Fall Times 1.5 ns Input and Output Timing 1.5V
and Reference Level Output Load See Figures 1 and 2
AC TEST LOADS
Z
O
= 50
3.3V
317
Output Buffer
30 pF
Figure 1
1.5V
50
OUTPUT
5 pF
Including
jig and
scope
Figure 2
351
Integrated Circuit Solution Inc. 7
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IS61SP12836
READ/WRITE CYCLE SWITCHING CHARACTERISTICS (Over Operating Range)
-166 -150 -133 -117 -5
Symbol Parameter Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit
fMAX Clock Frequency 166 150 133 117 100 MHz
tKC Cycle Time 6 6.7 7.5 8.5 10 ns
tKH Clock High Time 2.4 2.6 2.8 3.4 4 ns
tKL Clock Low Time 2.4 2.6 2.8 3.4 4 ns
tKQ Clock Access Time 3.5 3.8 4 4 5 ns
(1)
tKQX
tKQLZ
tKQHZ
tOEQ Output Enable to Output Valid 3.5 3.5 3.8 4 5 ns
tOEQX
tOELZ
tOEHZ
tAS Address Setup Time 1.5 1.5 1.5 1.5 1.5 ns
tSS Address Status Setup Time 1.5 1.5 1.5 1.5 1.5 ns
Clock High to Output Invalid 1.5 1.5 1.5 1.5 2.5 ns
(1,2)
Clock High to Output Low-Z 0 0 0 0 0 ns
(1,2)
Clock High to Output High-Z 1.5 6 1.5 6.7 1.5 7.5 1.5 8.5 1.5 10 ns
(1)
Output Disable to Output Invalid 0 0 0 0 0 ns
(1,2)
Output Enable to Output Low-Z 0 0 0 0 0 ns
(1,2)
Output Disable to Output High-Z 2 3.5 2 3.5 2 3.8 2 4 2 5 ns
tWS Write Setup Time 1.5 1.5 1.5 1.5 1.5 ns
tCES Chip Enable Setup Time 1.5 1.5 1.5 1.5 1.5 ns
tAVS Address Advance Setup Time 1.5 1.5 1.5 1.5 1.5 ns
tAH Address Hold Time 0.5 0.5 0.5 0.5 0.5 ns
tSH Address Status Hold Time 0.5 0.5 0.5 0.5 0.5 ns
tWH Write Hold Time 0.5 0.5 0.5 0.5 0.5 ns
tCEH Chip Enable Hold Time 0.5 0.5 0.5 0.5 0.5 ns
tAVH Address Advance Hold Time 0.5 0.5 0.5 0.5 0.5 ns
Note:
1. Guaranteed but not 100% tested. This parameter is periodically sampled.
2. Tested with load in Figure 2.
8 Integrated Circuit Solution Inc.
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IS61SP12836
READ/WRITE CYCLE TIMING
CLK
t
t
SH
KH
ADSP
t
SS
t
KC
t
KL
ADSP is blocked by CE inactive
ADSC
ADV
A16-A0
GW
BWE
BW4-BW1
CE
CE2
t
AS
t
AH
RD1 RD2
t
WS
t
WS
t
CES
t
CES
t
CEH
t
CEH
t
SS
t
WH
t
WH
ADSC initiate read
t
AVS
t
SH
t
AVH
Suspend Burst
RD3
CE Masks ADSP
CE2 and CE2 only sampled with ADSP or ADSC
Unselected with CE2
t
CES
t
CEH
CE2
t
t
OEQ
OEHZ
OE
t
KQX
t
KQHZ
DATA
OUT
DATA
IN
High-Z
High-Z
t
t
KQLZ
OELZ
t
KQ
t
OEQX
1a
2a 2b
2c 2d 3a
Pipelined Read
Single Read
Burst Read
Unselected
Integrated Circuit Solution Inc. 9
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IS61SP12836
WRITE CYCLE SWITCHING CHARACTERISTICS (Over Operating Range)
-166 -150 -133 -117 -5
Symbol Parameter Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit
tKC Cycle Time 6 6.7 7.5 8.5 10 ns
tKH Clock High Time 2.4 2.6 2.8 3.4 4 ns
tKL Clock Low Time 2.4 2.6 2.8 3.4 4 ns
tAS Address Setup Time 1.5 1.5 1.5 1.5 1.5 ns
tSS Address Status Setup Time 1.5 1.5 1.5 1.5 1.5 ns
tWS Write Setup Time 1.5 1.5 1.5 1.5 1.5 ns
tDS Data In Setup Time 1.5 1.5 1.5 1.5 1.5 ns
tCES Chip Enable Setup Time 1.5 1.5 1.5 1.5 1.5 ns
tAVS Address Advance Setup Time 1.5 1.5 1.5 1.5 1.5 ns
tAH Address Hold Time 0.5 0.5 0.5 0.5 0.5 ns
tSH Address Status Hold Time 0.5 0.5 0.5 0.5 0.5 ns
tDH Data In Hold Time 0.5 0.5 0.5 0.5 0.5 ns
tWH Write Hold Time 0.5 0.5 0.5 0.5 0.5 ns
tCEH Chip Enable Hold Time 0.5 0.5 0.5 0.5 0.5 ns
tAVH Address Advance Hold Time 0.5 0.5 0.5 0.5 0.5 ns
10 Integrated Circuit Solution Inc.
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IS61SP12836
WRITE CYCLE TIMING
CLK
t
SS
ADSP
ADSC
ADV
t
AS
t
SH
t
AH
t
KH
t
t
SS
KC
t
KL
t
SH
ADSP is blocked by CE inactive
A16-A0
GW
BWE
BW4-BW1
CE
CE2
CE2
OE
RD1 WR1
t
WS
t
WS
t
CES
t
CES
t
CES
t
CEH
t
CEH
t
CEH
t
OEQ
t
WH
t
WH
RD2 RD3
t
WS
t
WH
WR1
CE Masks ADSP
CE2 and CE2 only sampled with ADSP or ADSC
t
OEHZ
Unselected with CE2
t
KQX
t
KQHZ
Unselected
DATA
OUT
DATA
IN
High-Z
High-Z
t
OELZ
t
KQLZ
t
Single Read
KQ
t
OEQX
1a
t
KQX
t
KQHZ
t
DS
Single Write
1a
t
2a 2b 2c 2d
DH
Burst Read
Integrated Circuit Solution Inc. 11
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IS61SP12836
SNOOZE AND RECOVERY CYCLE SWITCHING CHARACTERISTICS (Over Operating Range)
-166 -150 -133 -117 -5
Symbol Parameter Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit
tKC Cycle Time 6 6.7 7.5 8.5 10 ns
tKH Clock High Time 2.4 2.6 2.8 3.4 4 ns
tKL Clock Low Time 2.4 2.6 2.8 3.4 4 ns
tKQ Clock Access Time 3.5 3.8 4 4 5 ns
(1)
tKQX
tKQLZ
tKQHZ
tOEQ Output Enable to Output Valid 3.5 3.5 3.9 4 5 ns
tOEQX
tOELZ
tOEHZ
tAS Address Setup Time 1.5 1.5 1.5 1.5 1.5 ns
tSS Address Status Setup Time 1.5 1.5 1.5 1.5 1.5 ns
tCES Chip Enable Setup Time 1.5 1.5 1.5 1.5 1.5 ns
Clock High to Output Invalid 1.5 1.5 1.5 2 2.5 ns
(1,2)
Clock High to Output Low-Z 0 0 0 0 0 ns
(1,2)
Clock High to Output High-Z 1.5 3.6 1.5 6.7 1.5 7.5 1.5 8.5 1.5 10 ns
(1)
Output Disable to Output Invalid 0 0 0 0 0 ns
(1,2)
Output Enable to Output Low-Z 0 0 0 0 0 ns
(1,2)
Output Disable to Output High-Z 2 3.5 2 3.5 2 3.8 2 4 2 5 ns
tAH Address Hold Time 0.5 0.5 0.5 0.5 0.5 ns
tSH Address Status Hold Time 0.5 0.5 0.5 0.5 0.5 ns
tCEH Chip Enable Hold Time 0.5 0.5 0.5 0.5 0.5 ns
tZZS ZZ Standby 2 2 2 2 2 cyc
tZZREC ZZ Recovery 2 2 2 2 2 cyc
Notes:
1. Guaranteed but not 100% tested. This parameter is periodically sampled.
2. Tested with load in Figure 2.
12 Integrated Circuit Solution Inc.
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IS61SP12836
SNOOZE AND RECOVERY CYCLE TIMING
t
KC
CLK
t
KL
ADSP
ADSC
ADV
t
t
SS
AS
t
SH
t
AH
t
KH
A16-A0
GW
BWE
BW4-BW1
CE
CE2
CE2
OE
t
CES
t
CES
t
CES
RD1
t
CEH
t
CEH
t
CEH
t
OEQ
t
OEHZ
RD2
t
OEQX
1a
t
KQX
t
KQHZ
t
ZZS
t
ZZREC
DATA
OUT
DATA
IN
High-Z
High-Z
t
t
KQLZ
OELZ
t
KQ
ZZ
Single Read
Snooze with Data Retention
Read
Integrated Circuit Solution Inc. 13
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IS61SP12836
ORDERING INFORMATION Commercial Range: 0°C to +70°C
Speed Order Part Number Package
166 MHz IS61SP12836-166TQ 14*20*1.4mm LQFP
IS61SP12836-166B 14*22mm PBGA
150 MHz IS61SP12836-150TQ 14*20*1.4mm LQFP
IS61SP12836-150B 14*22mm PBGA
133 MHz IS61SP12836-133TQ 14*20*1.4mm LQFP
IS61SP12836-133B 14*22mm PBGA
117 MHz IS61SP12836-117TQ 14*20*1.4mm LQFP
IS61SP12836-117B 14*22mm PBGA
5 ns IS61SP12836-5TQ 14*20*1.4mm LQFP
IS61SP12836-5B 14*22mm PBGA
Integrated Circuit Solution Inc.
HEADQUARTER:
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HSIN-CHU, TAIWAN, R.O.C.
TEL: 886-3-5780333
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TEL: 886-2-26962140
FAX: 886-2-26962252
http://www.icsi.com.tw
14 Integrated Circuit Solution Inc.
SSR012-0B
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