Datasheet IS61SP12832-5TQI, IS61SP12832-5TQ, IS61SP12832-166TQ, IS61SP12832-166B, IS61SP12832-150TQ Datasheet (ISSI)
...
Integrated Silicon Solution, Inc. — 1-800-379-4774
1
ADVANCE INFORMATION SR038-0D
04/16/99
This document contains ADVANCE INFORMATION data. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible
product. We assume no responsibility for any errors which may appear in this publication. © Copyright 1998, Integrated Silicon Solution, Inc.
FEATURES
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and
control
• Pentium™ or linear burst sequence control
using MODE input
• Three chip enables for simple depth expansion
and address pipelining
• Common data inputs and data outputs
• JEDEC 100-Pin TQFP and
119-pin PBGA package
• Single +3.3V, +10%, –5% power supply
• Power-down snooze mode
DESCRIPTION
The ISSI IS61SP12832 is a high-speed, low-power synchronous static RAM designed to provide a burstable, highperformance, secondary cache for the Pentium™, 680X0™,
and PowerPC™ microprocessors. It is organized as 131,072
words by 32 bits, fabricated with ISSI's advanced CMOS
technology. The device integrates a 2-bit burst counter, highspeed SRAM core, and high-drive capability outputs into a
single monolithic circuit. All synchronous inputs pass through
registers controlled by a positive-edge-triggered single clock
input.
Write cycles are internally self-timed and are initiated by the
rising edge of the clock input. Write cycles can be from one to
four bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be written.
BW1
controls DQa,
BW2
controls DQb,
BW3
controls DQc,
BW4
controls DQd, conditioned by
BWE
being LOW. A LOW
on GW input would cause all bytes to be written.
Bursts can be initiated with either
ADSP
(Address Status
Processor) or
ADSC
(Address Status Cache Controller) input
pins. Subsequent burst addresses can be generated internally by the IS61SP12832 and controlled by the
ADV
(burst
address advance) input pin.
The mode pin is used to select the burst sequence order,
Linear burst is achieved when this pin is tied LOW. Interleave
burst is achieved when this pin is tied HIGH or left floating.
IS61SP12832
128K x 32 SYNCHRONOUS
PIPELINED STATIC RAM
ADVANCE INFORMATION
APRIL 1999
FAST ACCESS TIME
Symbol Parameter -166 -150 -133 -117 -5 Units
tKQ Clock Access Time 3.5 3.8 4 4 5 ns
tKC Cycle Time 6 6.7 7.5 8.5 10 ns
Frenquency 166 150 133 117 100 MHz
ISSI
®
IS61SP12832
2
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ADVANCE INFORMATION SR038-0D
04/16/99
ISSI
®
BLOCK DIAGRAM
17
BINARY
COUNTER
A16-A0
BW1
GW
CLR
CE
CLK
Q0
Q1
MODE
A0’
A0
A1
A1’
CLK
ADV
ADSC
ADSP
15 17
ADDRESS
REGISTER
CE
D
CLK
Q
DQd
BYTE WRITE
REGISTERS
D
CLK
Q
DQc
BYTE WRITE
REGISTERS
D
CLK
Q
DQb
BYTE WRITE
REGISTERS
D
CLK
Q
DQa
BYTE WRITE
REGISTERS
D
CLK
Q
ENABLE
REGISTER
CE
D
CLK
Q
ENABLE
DELAY
REGISTER
D
CLK
Q
BWE
BW4
CE
CE2
CE2
BW2
BW3
128K x 32
MEMORY
ARRAY
32
INPUT
REGISTERS
CLK
OUTPUT
REGISTERS
CLK
32
OE
4
32
OE
DQ[31:0]
IS61SP12832
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ADVANCE INFORMATION SR038-0D
04/16/99
ISSI
®
PIN CONFIGURATION
119-pin PBGA (Top View) and 100-Pin TQFP
PIN DESCRIPTIONS
A0, A1 Synchronous Address Inputs. These
pins must tied to the two LSBs of the
address bus.
A2-A16 Synchronous Address Inputs
CLK Synchronous Clock
ADSP
Synchronous Processor Address
Status
ADSC
Synchronous Controller Address
Status
ADV
Synchronous Burst Address Advance
BW1-BW4
Synchronous Byte Write Enable
BWE
Synchronous Byte Write Enable
GW
Synchronous Global Write Enable
CE, CE2
, CE2 Synchronous Chip Enable
OE
Output Enable
DQa-DQd Synchronous Data Input/Output
MODE Burst Sequence Mode Selection
VCC +3.3V Power Supply
GND Ground
VCCQ Isolated Output Buffer Supply:
+3.3V
ZZ Snooze Enable
GNDQ Isolated Output Buffer Ground
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
VCCQ
NC
NC
DQc1
DQc2
VCCQ
DQc5
DQc7
VCCQ
DQd1
DQd4
VCCQ
DQd6
DQd8
NC
NC
VCCQ
A6
CE2
A7
NC
DQc3
DQc4
DQc6
DQc8
VCC
DQd2
DQd3
DQd5
DQd7
NC
A5
NC
NC
A4
A3
A2
GND
GND
GND
BW3
GND
NC
GND
BW4
GND
GND
GND
MODE
A10
NC
ADSP
ADSC
VCC
NC
CE
OE
ADV
GW
VCC
CLK
NC
BWE
A1
A0
VCC
A11
NC
A8
A9
A12
GND
GND
GND
BW2
GND
NC
GND
BW1
GND
GND
GND
NC
A14
NC
A16
CE2
A15
NC
DQb6
DQb5
DQb4
DQb2
VCC
DQa7
DQa5
DQa4
DQa3
NC
A13
NC
NC
VCCQ
NC
NC
DQb8
DQb7
VCCQ
DQb3
DQb1
VCCQ
DQa8
DQa6
VCCQ
DQa2
DQa1
NC
ZZ
VCCQ
1 2 3 4 5 6 7
NC
DQb8
DQb7
VCCQ
GND
DQb6
DQb5
DQb4
DQb3
GND
VCCQ
DQb2
DQb1
GND
NC
VCC
ZZ
DQa8
DQa7
VCCQ
GND
DQa6
DQa5
DQa4
DQa3
GND
VCC
DQa2
DQa1
NC
A6
A7CECE2
BW4
BW3
BW2
BW1
CE2
VCC
GND
CLK
GW
BWE
OE
ADSC
ADSPADV
A8
A9
NC
DQc1
DQc2
VCCQ
GND
DQc3
DQc4
DQc5
DQc6
GND
VCCQ
DQc7
DQc8
NC
VCC
NC
GND
DQd1
DQd2
VCCQ
GND
DQd3
DQd4
DQd5
DQd6
GND
VCCQ
DQd7
DQd8
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
100
99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45
MODE
A5A4A3A2A1
A0
NC
NC
GND
VCC
NC
NC
A10
A11
A12
A13
A14
A15
A16
46 47 48 49 50
IS61SP12832
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ADVANCE INFORMATION SR038-0D
04/16/99
ISSI
®
TRUTH TABLE
Address
Operation Used
CECE
CECE
CE
CE2
CE2CE2
CE2CE2
CE2
ADSPADSP
ADSPADSP
ADSP
ADSCADSC
ADSCADSC
ADSC
ADVADV
ADVADV
ADV
WRITEWRITE
WRITEWRITE
WRITE
OEOE
OEOE
OE
DQ
Deselected, Power-down None H X X X L X X X High-Z
Deselected, Power-down None L X H L XXXXHigh-Z
Deselected, Power-down None L L X L XXXXHigh-Z
Deselected, Power-down None X X H H L X X X High-Z
Deselected, Power-down None X 0 X H L X X X High-Z
Read Cycle, Begin Burst External L H L L XXXXHigh-Z
Read Cycle, Begin Burst External L H L H 0 X Read X High-Z
Write Cycle, Begin Burst External L H L H L X Write X High-Z
Read Cycle, Continue Burst Next X X X H H L Read L Q
Read Cycle, Continue Burst Next X X X H H L Read H High-Z
Read Cycle, Continue Burst Next H X X X H L Read L Q
Read Cycle, Continue Burst Next H X X X H L Read H High-Z
Write Cycle, Continue Burst Next X X X H H L Write X High-Z
Write Cycle, Continue Burst Next H X X X H L Write X High-Z
Read Cycle, Suspend Burst Current X X X H H H Read L Q
Read Cycle, Suspend Burst Current X X X H H H Read H High-Z
Read Cycle, Suspend Burst Current H X X X H H Read L Q
Read Cycle, Suspend Burst Current H X X X H H Read H High-Z
Write Cycle, Suspend Burst Current X X X H H H Write X High-Z
Write Cycle, Suspend Burst Current H X X X H H Write X High-Z
PARTIAL TRUTH TABLE
Function
GWGW
GWGW
GW
BWEBWE
BWEBWE
BWE
BW1BW1
BW1BW1
BW1
BW2BW2
BW2BW2
BW2
BW3BW3
BW3BW3
BW3
BW4BW4
BW4BW4
BW4
Read H H X X X X
Read H L H H H H
Write Byte 1 H L L H H H
Write All Bytes H LLLLL
Write All Bytes L XXXXX
IS61SP12832
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ADVANCE INFORMATION SR038-0D
04/16/99
ISSI
®
INTERLEAVED BURST ADDRESS TABLE (MODE = VCCQ or No Connect)
External Address 1st Burst Address 2nd Burst Address 3rd Burst Address
A1 A0 A1 A0 A1 A0 A1 A0
00 01 10 11
01 00 11 10
10 11 00 01
11 10 01 00
LINEAR BURST ADDRESS TABLE (MODE = GNDQ)
0,0
1,0
0,1A1', A0' = 1,1
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter Value Unit
TBIAS Temperature Under Bias –40 to +85 °C
TSTG Storage Temperature –55 to +150 °C
PD Power Dissipation 1.6 W
IOUT Output Current (per I/O) 100 mA
VIN, VOUT Voltage Relative to GND for I/O Pins –0.5 to VCCQ + 0.3 V
VIN Voltage Relative to GND for –0.5 to VCC + 0.5 V
for Address and Control Inputs
VCC Voltage on Vcc Supply Relatiive to GND –0.5 to 4.6 V
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. This device contains circuity to protect the inputs against damage due to high static voltages
or electric fields; however, precautions may be taken to avoid application of any voltage higher
than maximum rated voltages to this high-impedance circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
IS61SP12832
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ADVANCE INFORMATION SR038-0D
04/16/99
ISSI
®
OPERATING RANGE
Range Ambient Temperature VCC
Commercial 0°C to +70°C 3.3V, +10%, –5%
Industrial –40°C to +85°C 3.3V, +10%, –5%
DC ELECTRICAL CHARACTERISTICS
(1)
(Over Operating Range)
Symbol Parameter Test Conditions Min. Max. Unit
VOH Output HIGH Voltage IOH = –4.0 mA 2.4 — V
VOL Output LOW Voltage IOL = 8.0 mA — 0.4 V
VIH Input HIGH Voltage 2.0 VCCQ + 0.3 V
VIL Input LOW Voltage –0.3 0.8 V
ILI Input Leakage Current GND ≤ VIN ≤ VCCQ
(2)
Com. –2 2 µA
Ind. –5 5
ILO Output Leakage Current GND ≤ VOUT ≤ VCCQ, OE = VIH Com. –2 2 µA
Ind. –5 5
POWER SUPPLY CHARACTERISTICS (Over Operating Range)
-166 -150 -133 -117 -5
Symbol Parameter Test Conditions
Typ. Max. Typ. Max. Typ. Max. Typ. Max Typ. Max. Uni
t
ICC AC Operating Device Selected, Com. 200 230 190 220 180 210 175 205 170 200 mA
Supply Current All Inputs = VIL or VIH Ind. — — 200 230 190 220 185 215 180 210 mA
OE
= VIH, Vcc = Max.
Cycle Time ≥ tKC min.
ISB Standby Current Device Deselected, Com. 45 70 45 70 45 70 45 65 45 65 mA
VCC = Max., Ind. — — 50 80 50 80 50 75 50 75 mA
All Inputs = VIH or VIL
CLK Cycle Time ≥ tKC min.
IZZ Power-down Mode ZZ = VCCQ Com. — 5 — 5 — 5 — 5 — 5 mA
Current Clock Running Ind. — 15 — 15 — 15 — 15 — 15 mA
All Inputs ≤ GND + 0.2V
or ≥ Vcc – 0.2V
Notes:
1. The MODE pin has an internal pullup. This pin may be a No Connect, tied to GND, or tied to V
CCQ.
2. The MODE pin should be tied to Vcc or GND. It exhibits ±10 µA maximum leakage current when tied to ≤ GND + 0.2V
or ≥ Vcc – 0.2V.
IS61SP12832
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ADVANCE INFORMATION SR038-0D
04/16/99
ISSI
®
CAPACITANCE
(1,2)
Symbol Parameter Conditions Max. Unit
CIN Input Capacitance VIN = 0V 5 pF
COUT Input/Output Capacitance VOUT = 0V 8 pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A = 25°C, f = 1 MHz, Vcc = 3.3V.
AC TEST CONDITIONS
Parameter Unit
Input Pulse Level 0V to 3.0V
Input Rise and Fall Times 1.5 ns
Input and Output Timing 1.5V
and Reference Level
Output Load See Figures 1 and 2
AC TEST LOADS
Output
Buffer
Z
O
= 50Ω
1.5V
50Ω
30 pF
Figure 2
317 Ω
5 pF
Including
jig and
scope
351 Ω
OUTPUT
3.3V
Figure 1
IS61SP12832
8
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ADVANCE INFORMATION SR038-0D
04/16/99
ISSI
®
READ/WRITE CYCLE SWITCHING CHARACTERISTICS (Over Operating Range)
-166 -150 -133 -117 -5
Symbol Parameter Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit
fMAX Clock Frequency — 166 — 150 — 133 — 117 — 100 MHz
tKC Cycle Time 6 — 6.7 — 7.5 — 8.5 — 10 — ns
tKH Clock High Time 2.4 — 2.6 — 2.8 — 3.4 — 4 — ns
tKL Clock Low Time 2.4 — 2.6 — 2.8 — 3.4 — 4 — ns
tKQ Clock Access Time — 3.5 — 3.8 — 4 — 4 — 5 ns
tKQX
(1)
Clock High to Output Invalid 1.5 — 1.5 — 1.5 — 1.5 — 2.5 — ns
tKQLZ
(1,2)
Clock High to Output Low-Z 0 — 0 — 0 — 0 — 0 — ns
tKQHZ
(1,2)
Clock High to Output High-Z 1.5 6 1.5 6.7 1.5 7.5 1.5 8.5 1.5 10 ns
tOEQ Output Enable to Output Valid — 3.5 — 3.5 — 3.8 — 4 — 5 ns
tOEQX
(1)
Output Disable to Output Invalid 0 — 0 — 0 — 0 — 0 — ns
tOELZ
(1,2)
Output Enable to Output Low-Z 0 — 0 — 0 — 0 — 0 — ns
tOEHZ
(1,2)
Output Disable to Output High-Z 2 3.5 2 3.5 2 3.8 2 4 2 5 ns
tAS Address Setup Time 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — ns
tSS Address Status Setup Time 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — ns
tWS Write Setup Time 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — ns
tCES Chip Enable Setup Time 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — ns
tAVS Address Advance Setup Time 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — ns
tAH Address Hold Time 0.5 — 0.5 — 0.5 — 0.5 — 0.5 — ns
tSH Address Status Hold Time 0.5 — 0.5 — 0.5 — 0.5 — 0.5 — ns
tWH Write Hold Time 0.5 — 0.5 — 0.5 — 0.5 — 0.5 — ns
tCEH Chip Enable Hold Time 0.5 — 0.5 — 0.5 — 0.5 — 0.5 — ns
tAVH Address Advance Hold Time 0.5 — 0.5 — 0.5 — 0.5 — 0.5 — ns
Note:
1. Guaranteed but not 100% tested. This parameter is periodically sampled.
2. Tested with load in Figure 2.
IS61SP12832
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ADVANCE INFORMATION SR038-0D
04/16/99
ISSI
®
READ/WRITE CYCLE TIMING
Single Read
High-Z
High-Z
DATA
OUT
DATA
IN
OE
CE2
CE2
CE
BW4-BW1
BWE
GW
A15-A0
ADV
ADSC
ADSP
CLK
RD1 RD2
1a
2c 2d 3a
Unselected
Burst Read
t
KQX
t
KC
t
KL
t
KH
t
SS
t
SH
t
SS
t
SH
t
AS
t
AH
t
WS
t
WH
t
WS
t
WH
RD3
t
CES
t
CEH
t
CES
t
CEH
t
CES
t
CEH
CE2 and CE2 only sampled with ADSP or ADSC
CE Masks ADSP
Unselected with CE2
t
OEQ
t
OEQX
t
OELZ
t
KQLZ
t
KQ
t
OEHZ
t
KQHZ
ADSC initiate read
ADSP is blocked by CE inactive
t
AVH
t
AVS
Suspend Burst
Pipelined Read
2a 2b
IS61SP12832
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ADVANCE INFORMATION SR038-0D
04/16/99
ISSI
®
WRITE CYCLE SWITCHING CHARACTERISTICS (Over Operating Range)
-166 -150 -133 -117 -5
Symbol Parameter Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit
tKC Cycle Time 6 — 6.7 — 7.5 — 8.5 — 10 — ns
tKH Clock High Time 2.4 — 2.6 — 2.8 — 3.4 — 4 — ns
tKL Clock Low Time 2.4 — 2.6 — 2.8 — 3.4 — 4 — ns
tAS Address Setup Time 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — ns
tSS Address Status Setup Time 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — ns
tWS Write Setup Time 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — ns
tDS Data In Setup Time 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — ns
tCES Chip Enable Setup Time 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — ns
tAVS Address Advance Setup Time 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — ns
tAH Address Hold Time 0.5 — 0.5 — 0.5 — 0.5 — 0.5 — ns
tSH Address Status Hold Time 0.5 — 0.5 — 0.5 — 0.5 — 0.5 — ns
tDH Data In Hold Time 0.5 — 0.5 — 0.5 — 0.5 — 0.5 — ns
tWH Write Hold Time 0.5 — 0.5 — 0.5 — 0.5 — 0.5 — ns
tCEH Chip Enable Hold Time 0.5 — 0.5 — 0.5 — 0.5 — 0.5 — ns
tAVH Address Advance Hold Time 0.5 — 0.5 — 0.5 — 0.5 — 0.5 — ns
IS61SP12832
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ADVANCE INFORMATION SR038-0D
04/16/99
ISSI
®
WRITE CYCLE TIMING
Single Write
DATA
OUT
DATA
IN
OE
CE2
CE2
CE
BW4-BW1
BWE
GW
A16-A0
ADV
ADSC
ADSP
CLK
WR1 WR2
Unselected
Burst Write
t
KC
t
KL
t
KH
t
SS
t
SH
t
AS
t
AH
t
WS
t
WH
t
WS
t
WH
WR3
t
CES
t
CEH
t
CES
t
CEH
t
CES
t
CEH
CE2 and CE2 only sampled with ADSP or ADSC
CE Masks ADSP
Unselected with CE2
ADSC initiate Write
ADSP is blocked by CE inactive
t
AVH
t
AVS
ADV must be inactive for ADSP Write
WR1 WR2
t
WS
t
WH
WR3
t
WS
t
WH
High-Z
High-Z
1a
3a
t
DS
t
DH
BW4-BW1 only are applied to first cycle of WR2
Write
2c 2d2b2a
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ADVANCE INFORMATION SR038-0D
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ISSI
®
SNOOZE AND RECOVERY CYCLE SWITCHING CHARACTERISTICS (Over Operating Range)
-166 -150 -133 -117 -5
Symbol Parameter Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit
tKC Cycle Time 6 — 6.7 — 7.5 — 8.5 — 10 — ns
tKH Clock High Time 2.4 — 2.6 — 2.8 — 3.4 — 4 — ns
tKL Clock Low Time 2.4 — 2.6 — 2.8 — 3.4 — 4 — ns
tKQ Clock Access Time — 3.5 — 3.8 — 4 — 4 — 5 ns
tKQX
(1)
Clock High to Output Invalid 1.5 — 1.5 — 1.5 — 2 — 2.5 — ns
tKQLZ
(1,2)
Clock High to Output Low-Z 0 — 0 — 0 — 0 — 0 — ns
tKQHZ
(1,2)
Clock High to Output High-Z 1.5 3.6 1.5 6.7 1.5 7.5 1.5 8.5 1.5 10 ns
tOEQ Output Enable to Output Valid — 3.5 — 3.5 — 3.9 — 4 — 5 ns
tOEQX
(1)
Output Disable to Output Invalid 0 — 0 — 0 — 0 — 0 — ns
tOELZ
(1,2)
Output Enable to Output Low-Z 0 — 0 — 0 — 0 — 0 — ns
tOEHZ
(1,2)
Output Disable to Output High-Z 2 3.5 2 3.5 2 3.8 2 4 2 5 ns
tAS Address Setup Time 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — ns
tSS Address Status Setup Time 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — ns
tCES Chip Enable Setup Time 1.5 — 1.5 — 1.5 — 1.5 — 1.5 — ns
tAH Address Hold Time 0.5 — 0.5 — 0.5 — 0.5 — 0.5 — ns
tSH Address Status Hold Time 0.5 — 0.5 — 0.5 — 0.5 — 0.5 — ns
tCEH Chip Enable Hold Time 0.5 — 0.5 — 0.5 — 0.5 — 0.5 — ns
tZZS ZZ Standby 2 — 2 — 2 — 2 — 2 — cyc
tZZREC ZZ Recovery 2 — 2 — 2 — 2 — 2 — cyc
Notes:
1. Guaranteed but not 100% tested. This parameter is periodically sampled.
2. Tested with load in Figure 2.
IS61SP12832
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13
ADVANCE INFORMATION SR038-0D
04/16/99
ISSI
®
SNOOZE AND RECOVERY CYCLE TIMING
Single Read
High-Z
High-Z
DATA
OUT
DATA
IN
ZZ
OE
CE2
CE2
CE
BW4-BW1
BWE
GW
A16-A0
ADV
ADSC
ADSP
CLK
RD1
1a
Read
Snooze with Data Retention
t
KC
t
KL
t
KH
t
SS
t
SH
t
AS
t
AH
RD2
t
CES
t
CEH
t
CES
t
CEH
t
CES
t
CEH
t
OEQ
t
OEQX
t
OELZ
t
KQLZ
t
KQ
t
OEHZ
t
KQX
t
KQHZ
t
ZZS
t
ZZREC
IS61SP12832
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ADVANCE INFORMATION SR038-0D
04/16/99
ISSI
®
ORDERING INFORMATION
Commercial Range: 0°C to +70°C
Speed Order Part Number Package
166 MHz IS61SP12832-166TQ TQFP
IS61SP12832-166B PBGA
150 MHz IS61SP12832-150TQ TQFP
IS61SP12832-150B PBGA
133 MHz IS61SP12832-133TQ TQFP
IS61SP12832-133B PBGA
117 MHz IS61SP12832-117TQ TQFP
IS61SP12832-117B PBGA
5 ns IS61SP12832-5TQ TQFP
IS61SP12832-5B PBGA
Industrial Range: –40°C to +85°C
Speed Order Part Number Package
150 MHz IS61SP12832-150TQI TQFP
133 MHz IS61SP12832-133TQI TQFP
117 MHz IS61SP12832-117TQI TQFP
5 ns IS61SP12832-5TQI TQFP
ISSI
®
Integrated Silicon Solution, Inc.
2231 Lawson Lane
Santa Clara, CA 95054
Tel: 1-800-379-4774
Fax: (408) 588-0806
E-mail: sales@issi.com
www.issi.com
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