64K x 32 SYNCHRONOUS STATIC RAM
WITH NO-WAIT STATE BUS FEATURE
FEATURES
• Fast access time:
– 5 ns-100 MHz; 6 ns-83 MHz;
– 7 ns-75 MHz; 8 ns-66 MHz
• No wait cycles between Read and Write
• Internal self-timed write cycle
• Individual Byte Write Control
• Clock controlled, registered address, data and
control
• Pentium™ or linear burst sequence control
using MODE input
• Three chip enables for simple depth expansion
and address pipelining
• Common data inputs and data outputs
• JEDEC 100-pin TQFP and PQFP package
• Single +3.3V power supply
• Optional data strobe pin (#80) for latching data
(See page 12 for detailed timing)
DESCRIPTION
The IS61NW6432 is a high-speed, low-power synchronous
static RAM designed to provide a burstable, highperformance, 'no-wait' bus, secondary cache for the Pentium,
680X0, and Power PC microprocessors. It is organized as
65,536 words by 32 bits, fabricated with ISSI's advanced
CMOS technology.
Incorporating a 'no-wait' bus, wait cycles are eliminated when
the bus switches from read to write, or write to read. This
device integrates a 2-bit burst counter, high-speed SRAM
core, and high-drive capability outputs into a single monolithic
circuit.
All synchronous inputs pass through registers controlled by a
positive-edge-triggered clock input. Operations may be
suspended and all synchronous inputs ignored when Clock
Enable,
their previous values.
When the ADV/LD is HIGH the internal burst counter is
incremented. New external addresses can be loaded when
ADV/LD is LOW.
Write cycles are internally self-timed and are initiated by the
rising edge of the clock inputs and when RD/WE is LOW.
Separate byte enables allow individual bytes to be written.
BW1
I/O17-I/O24;
when
CEN
is HIGH. In this state the internal device will hold
controls I/O1-I/O8;
BW4
BW1, BW2, BW3
ADVANCE INFORMATION
JULY 1998
BW2
controls I/O9-I/O16;
controls I/O25-I/O32. All Bytes are written
, and
BW4
are LOW.
BW3
controls
MODE pin upon power up is in interleave burst mode. It can be
connected to GNDQ or VCCQ to alter power up state.
Begin New Write CycleExternalLLLLValidL-H
Begin New Read CycleExternalHLLLXL-H
Advance Burst Counter
(2)
InternalXXHLValidL-H
(Burst Write)
Advance Burst CounterInternalXXHLXL-H
(Burst Read)
Deselect (2 Cycle)
Hold/NOOP
Notes:
1. "X" Means don't care.
2. When ADV/LD signal is sampled HIGH, the internal burst counter is incremented. The R/W signal is ignored when the
counter is advanced. Therefore, the nature of the burst cycle (Read or Write) is determined by the status of the R/W signal
when the first address is loaded at the beginning of the burst cycle.
3. Deselect cycle is initiated when
tri-state two cycles after deselect is initiated.
4. When
CEN
The state of all the internal registers remains unchanged.
(3)
(4)
CEx
is sampled high at the rising edge of clock, that clock edge is blocked from propogating through the part.
XXHLLXL-H
XXXXHXL-H
is sampled HIGH and ADV/LD sampled LOW at rising edge of clock. The data bus will
CLK
PARTIAL TRUTH TABLE (Non-burst)
FunctionR/
W
WW
BW1BW1
BW1
BW1BW1
BW2BW2
BW2
BW2BW2
BW3BW3
BW3
BW3BW3
BW4BW4
BW4
BW4BW4
CExCEx
CEx
CExCEx
ADV/
WW
ReadHXXXXL L
Write Byte 1LLHHHLL
Write Byte 2LHLHHLL
Write Byte 3LHHLHLL
Write Byte 4LHHHLLL
Write All BytesLLLLLL L
FUNCTIONAL TIMING DIAGRAM
CYCLE
CLOCK
ADDRESS
(A0-A15)
CONTROL
(BWx, R/W, ADV/LD)
n+29n+30n+31n+32n+33n+34n+35n+36n+37
A29A30A31A32A33A34A35A36A37
C29C30C31C32C33C34C35C36C37
LDLD
LD
LDLD
4
DATA
(I/O1-I/O32)
D27D28D29D30D31D32D33D34D35
Integrated Silicon Solution, Inc.
ADVANCE INFORMATION SR050-0B
07/15/98
IS61NW6432
TYPICAL OPERATION (
Cycle AddressR/
CE1, CE3
WW
W
WW
and
ADV/
CEN
are LOW, CE2 is HIGH, Non-Burst Operation)
LDLD
LD
LDLD
CExCEx
CEx
CExCEx
CENCEN
CEN
CENCEN
nA0HLLLX?D–2?
n+1 A1LLLLL?D–1 ?
n+2A2HLLLXLD0Data Out
n+3A3LLLLLXD1Data In
n+4A4HLLLXLD2Data Out
n+5A5LLLLLXD3Data In
n+6A6HLLLXLD4Data Out
n+7A7LLLLLXD5Data In
n+8A8HLLLXLD6Data Out
n+9A9LLLLLXD7Data In
n+10A10HLLLXLD8Data Out
n+11A11HLLLXXD9Data In
n+12A12LLLLLLD10 Data Out
n+13A13LLLLLLD11 Data Out
n+14A14HLLLXXD12Data In
n+15A15HLLLXXD13Data In
n+16A16HLLLXLD14Data Out
n+17A17LLLLLLD15 Data Out
n+18A18LLLLLLD16 Data Out
n+19A19LLLLLXD17Data In
n+20A20HLLLXXD18Data In
n+21A21HLLLXXD19Data In
Note:
1. H = High; L = Low; X = Don't Care; ? = Don't Know; Z = High Impedance
BWxBWx
BWx
BWxBWx
OEOE
OE
OEOE
I/OComments
Integrated Silicon Solution, Inc.
ADVANCE INFORMATION SR050-0B
07/15/98
5
IS61NW6432
READ OPERATION
CycleAddressR/
nA0HLLLXXXAddress and Control meet setup
n+1XXXLLXXXClock Setup Valid
n+2XXXXXXLD0Contents of Address A0 Read Out
WW
W
WW
ADV/
LDLD
LD
LDLD
CExCEx
CEx
CExCEx
CENCEN
CEN
CENCEN
BWxBWx
BWx
BWxBWx
OEOE
OE
I/O Comments
OEOE
BURST READ OPERATION
CycleAddressR/
nA0HLLLXXXAddress and Control meet setup
n+1XXHXLXXXClock Setup Valid, Advance Counter
n+2XXHXLXLD0Address A0 Read Out, Inc. Count
n+3XXHXLXLD0+1Address A0+1 Read Out, Inc. Count
n+4XXHXLXLD0+2Address A0+2 Read Out, Inc. Count
n+5A1HLLLXLD0+3Address A0+3 Read Out, Load A1
n+6XXHXLXLD0Address A0 Read Out, Inc. Count
n+7XXHXLXLD1Address A1 Read Out, Inc. Count
n+8A2HLLLXLD1+1Address A1+1 Read Out, Load A2
WW
W
WW
ADV/
LDLD
LD
LDLD
CExCEx
CEx
CExCEx
CENCEN
CEN
CENCEN
BWxBWx
BWx
BWxBWx
OEOE
OE
I/O Comments
OEOE
WRITE OPERATION
CycleAddressR/
nA0LLLLLXXAddress and Control meet setup
n+1XXXLLXXXClock Setup Valid
n+2XXXXLXXD0Write D0 to Address A0
WW
W
WW
ADV/LD
CExCEx
CEx
CExCEx
CENCEN
CEN
CENCEN
BWxBWx
BWx
BWxBWx
OEOE
OE
I/O Comments
OEOE
BURST WRITE OPERATION
CycleAddressR/
nA0LLLLLXXAddress and Control meet setup
n+1XXHXLLXXClock Setup Valid, Inc. Count
n+2XXHXLLXD0Address A0 Write, Inc. Count
n+3XHHLLXXD0+1Address A0+1 Write, Inc. Count
n+4XXHXLLXD0+2Address A0+2 Write, Inc. Count
n+5A1LLLLLXD0+3Address A0+3 Write, Load A1
n+6XXHXLLXD0Address A0 Write, Inc. Count
n+7XXHXLLXD1Address A1 Write, Inc. Count
n+8A2LLLLLXD1+1Address A1+1 Write, Load A2
Note:
1. H = High; L = Low; X = Don't Care; ? = Don't Know; Z = High Impedance
WW
W
WW
ADV/
LDLD
LD
LDLD
CExCEx
CEx
CExCEx
CENCEN
CEN
CENCEN
BWxBWx
BWx
BWxBWx
OEOE
OE
I/O Comments
OEOE
6
Integrated Silicon Solution, Inc.
ADVANCE INFORMATION SR050-0B
07/15/98
IS61NW6432
READ OPERATION WITH CLOCK ENABLE USED
CycleAddressR/
nA0HLLLXXXAddress and Control meet setup
n+1XXXXHXXXClock n+1 Ignored
n+2A1HLLLXXXClock Valid
n+3XXXXHXLD0Clock Ignored. Data D0 is on the bus
n+4XXXXHXLD0Clock Ignored. Data D0 is on the bus
n+5A2HLLLXLD0Address A0 Read Out (bus trans.)
n+6A3?LLLXLD1Address A1 Read Out (bus trans.)
n+7A4?LLLXLD2Address A2 Read Out (bus trans.)
WW
W
WW
ADV/
LDLD
LD
LDLD
CExCEx
CEx
CExCEx
CENCEN
CEN
CENCEN
BWxBWx
BWx
BWxBWx
OEOE
OE
I/O Comments
OEOE
WRITE OPERATION WITH CLOCK ENABLE USED
CycleAddressR/
nA0LLLLLXXAddress and Control meet setup
n+1XXXXHXXXClock n+1 Ignored
n+2A1LLLLLXXClock Valid
n+3XXXXHXLdiClock Ignored.
n+4XXXXHXLdiClock Ignored.
n+5A2LLLLLLD0Write data D0 (bus trans.)
n+6A3?LLLLLD1Write data D1 (bus trans.)
n+7A4?LLLLLD2Write data D2 (bus trans.)
Note:
1. H = High; L = Low; X = Don't Care; ? = Don't Know; Z = High Impedance; di could be D0 if desired.
WW
W
WW
ADV/
LDLD
LD
LDLD
CExCEx
CEx
CExCEx
CENCEN
CEN
CENCEN
BWxBWx
BWx
BWxBWx
OEOE
OE
I/O Comments
OEOE
Integrated Silicon Solution, Inc.
ADVANCE INFORMATION SR050-0B
07/15/98
7
IS61NW6432
INTERLEAVED BURST ADDRESS TABLE (MODE = VCCQ or No Connect)
TBIASTemperature Under Bias–10 to +85°C
TSTGStorage Temperature–55 to +150°C
PDPower Dissipation1.8W
IOUTOutput Current (per I/O)100mA
VIN, VOUT Voltage Relative to GND for I/O Pins–0.5 to VCCQ + 0.3V
VINVoltage Relative to GND for–0.5 to 5.5V
for Address and Control Inputs
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. This device contains circuity to protect the inputs against damage due to high static
voltages or electric fields; however, precautions may be taken to avoid application of
any voltage higher than maximum rated voltages to this high-impedance circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power
Output Disable to Output High-Z—3.5—3.5—3.5—3.5ns
tASAddress Setup Time2.0—2.0—2.0—2.0—ns
tWSRead/Write Setup Time2.0—2.0—2.0—2.0—ns
tCESChip Enable Setup Time2.0—2.0—2.0—2.0—ns
tSEClock Enable Setup Time2.0—2.0—2.0—2.0—ns
tAVSAddress Advance Setup Time2.0—2.0—2.0—2.0—ns
tAHAddress Hold Time0.5—0.5—0.5—0.5—ns
tHEClock EnableHold Time0.5—0.5—0.5—0.5—ns
tWHWrite Hold Time0.5—0.5—0.5—0.5—ns
tCEHChip Enable Hold Time0.5—0.5—0.5—0.5—ns
tALSAdvance/Load (ADV/LD) Setup Time2.0—2.0—2.0—2.0—ns
tALHAdvance/Load (ADV/LD) Hold Time0.5—0.5—0.5—0.5—ns
tdsData Setup Time2.0—2.0—2.0—2.0—ns
tdhData Hold Time0.5—0.5—0.5—0.5—ns
tzqI/O From Tri-State to Valid1.52.51.52.51.52.51.52.5ns
Notes:
1. Configuration signal MODE is static and must not change during normal operation.
2. Guaranteed but not 100% tested. This parameter is periodically sampled.
3. Tested with load in Figure 2.
Integrated Silicon Solution, Inc.
ADVANCE INFORMATION SR050-0B
07/15/98
11
IS61NW6432
READ/WRITE CYCLE TIMING
tKC
CLK
tSEtHE
CEN
tALStALH
ADV/LD
tAS
A15-A0
R/W
BW4-BW1
tCEStCEH
CE1
tCEStCEH
CE2
tCEStCEH
CE3
tAH
RD1
tWStWH
RD2RD3
tOEQ
tKLtKH
WR1
tWStWH
WR1
RD4
tAVS
RD5
Unselected with CE3
tOEHZ
OE
DATAOUT
DATA
STROBE
DATA
IN
High-Z
High-Z
High-Z
tOELZ
1a2a
tZQ
tKQLZ
tKQ
3a
tKQX
tDStDH
Single ReadSingle Write
tOEQX
High-Z
1a
tKQ
4a4b4c4d
Burst Read
tKQX
tKQHZ
High-Z
Unselected
12
Integrated Silicon Solution, Inc.
ADVANCE INFORMATION SR050-0B
07/15/98
IS61NW6432
ORDERING INFORMATION
Commercial Range: 0°C to +70°C
Speed (ns)Order Part NumberPackage
5IS61NW6432-5TQTQFP
IS61NW6432-5PQPQFP
6IS61NW6432-6TQTQFP
IS61NW6432-6PQPQFP
7IS61NW6432-7TQTQFP
IS61NW6432-7PQPQFP
8IS61NW6432-8TQTQFP
IS61NW6432-8PQPQFP
NOTICE
Integrated Silicon Solution, Inc., reserves the right to make changes to the products contained in this publication in order to
improve design, performance or reliability. Integrated Silicon Solution, Inc. assumes no responsibility for the use of any
circuits described herein, conveys no license under any patent or other right, and makes no representation that the circuits
are free of patent infringement. Charts and schedules contained herein reflect representative operating parameters, and may
vary depending upon a user's specific application. While the information in this publication has been carefully checked,
Integrated Silicon Solution, Inc. shall not be liable for any damages arising as a result of any error or omission.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure
or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect
its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc.
receives written assurances, to its satisfaction, that: (a) the risk of injury or damage has been minimized; (b) the user assumes
all such risks; and (c) potential liability of Integrated Silicon Solution, Inc. is adequately protected under the circumstances.
Copyright 1998 Integrated Silicon Solution, Inc.
Reproduction in whole or in part, without the prior written consent of Integrated Silicon Solution, Inc., is prohibited.
ISSI
Integrated Silicon Solution, Inc.
2231 Lawson Lane
Santa Clara, CA 95054
Tel: 1-800-379-4774
Fax: (408) 588-0806
e-mail: sales@issi.com
http://www.issi.com
®
Integrated Silicon Solution, Inc.
ADVANCE INFORMATION SR050-0B
07/15/98
13
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