Datasheet IS61NP51218-5TQI, IS61NP51218-5TQ, IS61NLP51218-5TQI, IS61NLP51218-5TQ, IS61NLP51218-5BI Datasheet (ISSI)

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This document contains PRELIMINARY INFORMATION data. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
1
PRELIMINARY INFORMATION Rev. 00E
04/26/01
IS61NP25632 IS61NP25636 IS61NP51218 IS61NLP25632 IS61NLP25636 IS61NLP51218
®
FEATURES
• 100 percent bus utilization
• No wait cycles between Read and Write
• Internal self-timed write cycle
• Individual Byte Write Control
• Single R/W (Read/Write) control pin
• Clock controlled, registered address, data and control
• Interleaved or linear burst sequence control using MODE input
• Three chip enables for simple depth expansion and address pipelining for TQFP
• Power Down mode
• Common data inputs and data outputs
CKE pin to enable clock and suspend operation
• JEDEC 100-pin TQFP, 119 PBGA package
• Single +3.3V power supply (± 5%)
• NP Version: 3.3V I/O Supply Voltage
• NLP Version: 2.5V I/O Supply Voltage
• Industrial temperature available
DESCRIPTION
The 8 Meg 'NP' product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, 'no wait' state, device for network and communications customers. They are organized as 262,144 words by 32 bits, 262,144 words by 36 bits and 524,288 words by 18 bits, fabricated with
ISSI
's advanced CMOS technology.
Incorporating a 'no wait' state feature, wait cycles are eliminated when the bus switches from read to write, or write to read. This device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit.
All synchronous inputs pass through registers are controlled by a positive-edge-triggered single clock input. Operations may be suspended and all synchronous inputs ignored when Clock Enable, CKE is HIGH. In this state the internal device will hold their previous values.
All Read, Write and Deselect cycles are initiated by the ADV input. When the ADV is HIGH the internal burst counter is incremented. New external addresses can be loaded when ADV is LOW.
Write cycles are internally self-timed and are initiated by the rising edge of the clock inputs and when WE is LOW. Separate byte enables allow individual bytes to be written.
A burst mode pin (MODE) defines the order of the burst sequence. When tied HIGH, the interleaved burst sequence is selected. When tied LOW, the linear burst sequence is selected.
256K x 32, 256K x 36 and 512K x 18 PIPELINE 'NO WAIT' STATE BUS SRAM
PRELIMINARY INFORMATION
APRIL 2001
FAST ACCESS TIME
Symbol Parameter -133 -100 Units
tKQ Clock Access Time 4.2 5 ns tKC Cycle Time 7.5 10 ns
Frequency 133 100 MHz
2
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PRELIMINARY INFORMATION Rev. 00E
04/26/01
IS61NP25632 IS61NP25636 IS61NP51218
IS61NLP25632 IS61NLP25636 IS61NLP51218 ISSI
®
BLOCK DIAGRAM
ADV
WE
}
BW
Ÿ
X
(X=a,b,c,d or a,b)
CE
CE2
CE2
CONTROL
LOGIC
256Kx32; 256Kx36;
512Kx18
MEMORY ARRAY
WRITE
ADDRESS
REGISTER
WRITE
ADDRESS
REGISTER
CONTROL
LOGIC
OUTPUT
REGISTER
BUFFER
ADDRESS
REGISTER
A [0:17] or A [0:18]
CLK
CKE
A2-A17 or A2-A18
A0-A1 A'0-A'1
BURST ADDRESS COUNTER
MODE
DATA -I N
REGISTER
DATA -I N
REGISTER
CONTROL
REGISTER
OE
ZZ
32, 36 or 18
K
K
DQa0-DQd7 or DQa0-DQb8 DQPa-DQPd
K
K
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PRELIMINARY INFORMATION Rev. 00E
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IS61NP25632 IS61NP25636 IS61NP51218
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®
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
VCCQ
NC
NC
DQc1
DQc2
VCCQ
DQc5
DQc7
VCCQ
DQd1
DQd4
VCCQ
DQd6
DQd8
NC
NC
VCCQ
A6
CE2
A7
NC
DQc3
DQc4
DQc6
DQc8
VCC
DQd2
DQd3
DQd5
DQd7
NC
A5
NC
NC
A4
A3
A2
GND
GND
GND
BWc
GND
NC
GND
BWd
GND
GND
GND
MODE
A10
NC
NC
ADV
VCC
NC
CE
OE
A17
WE
VCC
CLK
NC
CKE
A1
A0
VCC
A11
NC
A8
A9
A12
GND
GND
GND
BWb
GND
NC
GND
BWa
GND
GND
GND
VCC
A14
NC
A16
CE2
A15
NC
DQb6
DQb5
DQb4
DQb2
VCC
DQa7
DQa5
DQa4
DQa3
NC
A13
NC
NC
VCCQ
NC
NC
DQb8
DQb7
VCCQ
DQb3
DQb1
VCCQ
DQa8
DQa6
VCCQ
DQa2
DQa1
NC
ZZ
VCCQ
1 2 3 4 5 6 7
256K x 32
PIN DESCRIPTIONS
A0, A1 Synchronous Address Inputs. These
pins must tied to the two LSBs of the
address bus. A2-A17 Synchronous Address Inputs CLK Synchronous Clock ADV Synchronous Burst Address Advance
BWa-BWd Synchronous Byte Write Enable WE Write Enable CKE Clock Enable
CE, CE2, CE2 Synchronous Chip Enable OE Output Enable
DQa-DQd Synchronous Data Input/Output MODE Burst Sequence Mode Selection VCC +3.3V Power Supply GND Ground VCCQ
I
solated Output Buffer Supply: +3.3V/2.5V
ZZ Snooze Enable
PIN CONFIGURATION
119-pin PBGA (Top View) and 100-Pin TQFP
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
100
99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
NC DQc1 DQc2
VCCQ
GND DQc3 DQc4 DQc5 DQc6
GND
VCCQ
DQc7 DQc8
VCC
VCC
VCC
GND DQd1 DQd2
VCCQ
GND DQd3 DQd4 DQd5 DQd6
GND
VCCQ
DQd7 DQd8
NC
NC DQb8 DQb7 VCCQ GND DQb6 DQb5 DQb4 DQb3 GND VCCQ DQb2 DQb1 GND VCC VCC ZZ DQa8 DQa7 VCCQ GND DQa6 DQa5 DQa4 DQa3 GND VCCQ DQa2 DQa1 NC
MODE
A5A4A3A2A1
A0
NC
NC
GND
VCC
NC
NC
A10
A11
A12
A13
A14
A15
A16
A6A7CE
CE2
BWd
BWc
BWb
BWa
CE2
VCC
GND
CLKWECKEOEADVNCA17A8A9
4
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IS61NP25632 IS61NP25636 IS61NP51218
IS61NLP25632 IS61NLP25636 IS61NLP51218 ISSI
®
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
VCCQ
NC
NC
DQc1
DQc2
VCCQ
DQc5
DQc7
VCCQ
DQd1
DQd4
VCCQ
DQd6
DQd8
NC
NC
VCCQ
A6
CE2
A7
DQPc
DQc3
DQc4
DQc6
DQc8
VCC
DQd2
DQd3
DQd5
DQd7
DQPd
A5
NC
NC
A4
A3
A2
GND
GND
GND
BWc
GND
NC
GND
BWd
GND
GND
GND
MODE
A10
NC
NC
ADV
VCC
NC
CE
OE
A17
WE
VCC
CLK
NC
CKE
A1
A0
VCC
A11
NC
A8
A9
A12
GND
GND
GND
BWb
GND
NC
GND
BWa
GND
GND
GND
VCC
A14
NC
A16
CE2
A15
DQPb
DQb6
DQb5
DQb4
DQb2
VCC
DQa7
DQa5
DQa4
DQa3
DQPa
A13
NC
NC
VCCQ
NC
NC
DQb8
DQb7
VCCQ
DQb3
DQb1
VCCQ
DQa8
DQa6
VCCQ
DQa2
DQa1
NC
ZZ
VCCQ
1 2 3 4 5 6 7
PIN CONFIGURATION
119-pin PBGA (Top View) and 100-Pin TQFP
PIN DESCRIPTIONS
A0, A1 Synchronous Address Inputs. These
pins must tied to the two LSBs of the
address bus. A2-A17 Synchronous Address Inputs CLK Synchronous Clock ADV Synchronous Burst Address Advance
BWa-BWd Synchronous Byte Write Enable WE Write Enable
CKE Clock Enable CE, CE2, CE2 Synchronous Chip Enable OE Output Enable
DQa-DQd Synchronous Data Input/Output MODE Burst Sequence Mode Selection VCC +3.3V Power Supply GND Ground VCCQ
Isolated Output Buffer Supply: +3.3V/2.5V ZZ Snooze Enable DQPa-DQPd Parity Data I/O
256K x 36
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
100
99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
DQPc DQc1 DQc2
VCCQ
GND DQc3 DQc4 DQc5 DQc6
GND
VCCQ
DQc7 DQc8
VCC
VCC
VCC
GND DQd1 DQd2
VCCQ
GND DQd3 DQd4 DQd5 DQd6
GND
VCCQ
DQd7 DQd8
DQPd
DQPb DQb8 DQb7 VCCQ GND DQb6 DQb5 DQb4 DQb3 GND VCCQ DQb2 DQb1 GND VCC VCC ZZ DQa8 DQa7 VCCQ GND DQa6 DQa5 DQa4 DQa3 GND VCCQ DQa2 DQa1 DQPa
MODE
A5A4A3A2A1
A0
NC
NC
GND
VCC
NC
NC
A10
A11
A12
A13
A14
A15
A16
A6A7CE
CE2
BWd
BWc
BWb
BWa
CE2
VCC
GND
CLKWECKEOEADVNCA17A8A9
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PRELIMINARY INFORMATION Rev. 00E
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IS61NP25632 IS61NP25636 IS61NP51218
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®
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
VCCQ
NC
NC
DQ9
NC
VCCQ
NC
DQ12
VCCQ
NC
DQ14
VCCQ
DQ16
NC
NC
NC
VCCQ
A6
CE2
A7
NC
DQ10
NC
DQ11
NC
VCC
DQ13
NC
DQ15
NC
DQP2
A5
A10
NC
A4
A3
A2
GND
GND
GND
BWb
GND
NC
GND
NC
GND
GND
GND
MODE
A11
NC
NC
ADV
VCC
NC
CE
OE
A17
WE
VCC
CLK
NC
CKE
A1
A0
VCC
NC
NC
A8
A9
A12
GND
GND
GND
NC
GND
NC
GND
BWa
GND
GND
GND
VCC
A14
NC
A16
CE2
A15
DQP1
NC
DQ7
NC
DQ5
VCC
NC
DQ3
NC
DQ2
NC
A13
A18
NC
VCCQ
NC
NC
NC
DQ8
VCCQ
DQ6
NC
VCCQ
DQ4
NC
VCCQ
NC
DQ1
NC
ZZ
VCCQ
1 2 3 4 5 6 7
PIN CONFIGURATION
119-pin PBGA (Top View) and 100-Pin TQFP
PIN DESCRIPTIONS
A0, A1 Synchronous Address Inputs. These
pins must tied to the two LSBs of the
address bus. A2-A18 Synchronous Address Inputs CLK Synchronous Clock ADV Synchronous Burst Address Advance
BWa-BWb Synchronous Byte Write Enable WE Write Enable CKE Clock Enable
CE, CE2, CE2 Synchronous Chip Enable OE Output Enable
DQ1-DQ16 Synchronous Data Input/Output MODE Burst Sequence Mode Selection VCC +3.3V Power Supply GND Ground VCCQ
Isolated Output Buffer Supply: +3.3V/2.5V ZZ Snooze Enable DQP1-DQP2 Parity Data I/O DQP1 is parity for
DQ1-8; DQP2 is parity for DQ9-16
512K x 18
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
100
99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
NC NC NC
VCCQ
GND
NC NC
DQ9
DQ10
GND
VCCQ
DQ11 DQ12
VCC VCC VCC
GND DQ13 DQ14
VCCQ
GND DQ15 DQ16 DQP2
NC
GND
VCCQ
NC NC NC
A10 NC NC VCCQ GND NC DQP1 DQ8 DQ7 GND VCCQ DQ6 DQ5 GND VCC VCC ZZ DQ4 DQ3 VCCQ GND DQ2 DQ1 NC NC GND VCCQ NC NC NC
MODE
A5A4A3A2A1
A0
NC
NC
GND
VCC
NC
NC
A11
A12
A13
A14
A15
A16
A17
A6A7CE
CE2NCNC
BWb
BWa
CE2
VCC
GND
CLKWECKEOEADVNCA18A8A9
6
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IS61NP25632 IS61NP25636 IS61NP51218
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®
SYNCHRONOUS TRUTH TABLE
(1)
Address
Operation Used CS1 CS2 CS2 ADV WE BWx OE CKE CLK
Not Selected Continue N/A X X X H X X X L Begin Burst Read External Address L H L L H X L L Continue Burst Read Next Address X X X H X X L L NOP/Dummy Read External Address L H L L H X H L Dummy Read Next Address X X X H X X H L Begin Burst Write External Address L H L L L L X L Continue Burst Write Next Address X X X H X L X L NOP/Write Abort N/A L H L L L H X L Write Abort Next Address X X X H X H X L Ignore Clock Current Address X X X X X X X H
Notes:
1. "X" means don't care.
2. The rising edge of clock is symbolized by
3. A continue deselect cycle can only be entered if a deselect cycle is executed first.
4. WE = L means Write operation in Write Truth Table. WE = H means Read operation in Write Truth Table.
5. Operation finally depends on status of asynchronous pins (ZZ and OE).
BURST
READ
DESELECT
BURST WRITE
BEGIN
READ
BEGIN WRITE
READ
WRITE
READ
WRITE
BURST
BURST
BURST
DS
DS
DS
READ
DSDS
READ WRITE
WRITE
BURST
BURST
WRITE
READ
STATE DIAGRAM
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IS61NP25632 IS61NP25636 IS61NP51218
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®
ASYNCHRONOUS TRUTH TABLE
(1)
Operation ZZ OE I/O STATUS
Sleep Mode H X High-Z
Read
LL DQ
L H High-Z Write L X Din, High-Z Deselected L X High-Z
Notes:
1. X means "Don't Care".
2. For write cycles following read cycles, the output buffers must be disabled with OE, otherwise data bus contention will occur.
3. Sleep Mode means power Sleep Mode where stand-by current does not depend on cycle time.
4. Deselected means power Sleep Mode where stand-by current depends on cycle time.
WRITE TRUTH TABLE (x18)
Operation WE BWa BWb
READ H X X WRITE BYTE a L L H WRITE BYTE b L H L WRITE ALL BYTEs L L L WRITE ABORT/NOP L H H
Notes:
1. X means "Don't Care".
2. All inputs in this table must beet setup and hold time around the rising edge of CLK.
WRITE TRUTH TABLE (x32/x36)
Operation WE BWa BWb BWc BWd
READ H XXXX WRITE BYTE a L L H H H WRITE BYTE b L H L H H WRITE BYTE c L H H L H WRITE BYTE d L H H H L WRITE ALL BYTEs L L L L L WRITE ABORT/NOP L H H H H
Notes:
1. X means "Don't Care".
2. All inputs in this table must beet setup and hold time around the rising edge of CLK.
8
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IS61NP25632 IS61NP25636 IS61NP51218
IS61NLP25632 IS61NLP25636 IS61NLP51218 ISSI
®
INTERLEAVED BURST ADDRESS TABLE (MODE = VCC)
External Address 1st Burst Address 2nd Burst Address 3rd Burst Address
A1 A0 A1 A0 A1 A0 A1 A0
00 01 10 11 01 00 11 10 10 11 00 01 11 10 01 00
LINEAR BURST ADDRESS TABLE (MODE = GND)
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter Value Unit
TBIAS Temperature Under Bias –10 to +85 °C TSTG Storage Temperature –65 to +150 °C PD Power Dissipation 1.6 W IOUT Output Current (per I/O) 100 mA VIN, VOUT Voltage Relative to GND for I/O Pins –0.5 to VCCQ + 0.3 V VIN Voltage Relative to GND for –0.3 to 4.6 V
for Address and Control Inputs
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause perma­nent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specifi­cation is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. This device contains circuity to protect the inputs against damage due to high static voltages or electric fields; however, precautions may be taken to avoid application of any voltage higher than maximum rated voltages to this high-impedance circuit.
3.
This device contains circuitry that will ensure the output devices are in High-Z at power up.
0,0
1,0
0,1A1', A0' = 1,1
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PRELIMINARY INFORMATION Rev. 00E
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IS61NP25632 IS61NP25636 IS61NP51218
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®
OPERATING RANGE
Range Ambient Temperature VCC VCCQ
Commercial 0°C to +70°C 3.3V ± 5% 3.3V ± 5%
3.3V ± 5% 2.5V ± 5%
Industrial -40°C to +85°C 3.3V ± 5% 3.3V ± 5%
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-133 -100 MAX MAX
Symbol Parameter Test Conditions
x18 x32/36 x18 x32/36 Uni
t
ICC AC Operating Device Selected, Com. 350 350 300 300 mA
Supply Current OE = VIH, ZZ ≤ VIL,IND. —— 350 350
All Inputs 0.2V OR VCC – 0.2V, Cycle Time ≥ tKC min.
ISB Standby Current Device Deselected, COM.9090 8080 mA
TTL Input VCC = Max., Ind. —— 90 90
All Inputs 0.2V OR VCC – 0.2V, ZZ VIL, f = Max.
ISBI Standby Current Device Deselected, Com. 20 20 20 20 mA
CMOS Input VCC = Max., Ind. —— 25 25
VIN ≤ GND + 0.2V or ≥ VCC – 0.2V f = 0
Note:
1. MODE pin has an internal pullup and should be tied to Vcc or GND. It exhibits ±30 µA maximum leakage current when tied to GND + 0.2V or Vcc – 0.2V.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
2.5V 3.3V
Symbol Parameter Test Conditions Min. Max. Min. Max. Unit
VOH Output HIGH Voltage IOH = –4.0 mA (3.3V) 2.0 2.4 V
IOH = 1.0 mA (2.5V)
VOL Output LOW Voltage IOL = 8.0 mA (3.3V) 0.4 0.4 V
IOL = 1.0 mA (2.5V) VIH Input HIGH Voltage 1.7 VCC + 0.3 2.0 VCC + 0.3 V VIL Input LOW Voltage –0.3 0.7 –0.3 0.8 V ILI Input Leakage Current GND VIN VCC
(1)
–55 –55 µA
ILO Output Leakage Current GND VOUT VCCQ, OE = VI –55 –55 µA
10
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IS61NP25632 IS61NP25636 IS61NP51218
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®
3.3V I/O AC TEST CONDITIONS
Parameter Unit
Input Pulse Level 0V to 3.0V Input Rise and Fall Times 1.5 ns Input and Output Timing 1.5V
and Reference Level Output Load See Figures 1 and 2
3.3V I/O OUTPUT LOAD EQUIVALENT
ZO = 50
1.5V
50
OUTPUT
317
5 pF Including jig and scope
351
OUTPUT
+3.3V
Figure 1 Figure 2
CAPACITANCE
(1,2)
Symbol Parameter Conditions Max. Unit
CIN Input Capacitance VIN = 0V 6 pF COUT Input/Output Capacitance VOUT = 0V 8 pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A = 25°C, f = 1 MHz, Vcc = 3.3V.
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IS61NP25632 IS61NP25636 IS61NP51218
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2.5V I/O AC TEST CONDITIONS
Parameter Unit
Input Pulse Level 0V to 2.5V Input Rise and Fall Times 1.5 ns Input and Output Timing 1.25V
and Reference Level Output Load See Figures 3 and 4
2.5V I/O OUTPUT LOAD EQUIVALENT
ZO = 50
1.25V
50
OUTPUT
1,667
5 pF Including jig and scope
1,538
OUTPUT
+2.5V
Figure 3 Figure 4
12
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IS61NP25632 IS61NP25636 IS61NP51218
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®
READ/WRITE CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
-133 -100
Symbol Parameter Min. Max. Min. Max. Unit
fmax Clock Frequency 133 100 MHz tKC Cycle Time 7.5 10 ns tKH Clock High Time 3 3 ns tKL Clock Low Time 3 3 ns tKQ Clock Access Time 4.2 5ns tKQX
(2)
Clock High to Output Invalid 1.5 1.5 ns
tKQLZ
(2,3)
Clock High to Output Low-Z 0 0 ns
tKQHZ
(2,3)
Clock High to Output High-Z 3.5 3.5 ns tOEQ Output Enable to Output Valid 4.2 5ns tOELZ
(2,3)
Output Enable to Output Low-Z 0 0 ns tOEHZ
(2,3)
Output Disable to Output High-Z 3.5 3.5 ns tAS Address Setup Time 1.5 1.5 ns tWS Read/Write Setup Time 1.5 1.5 ns tCES Chip Enable Setup Time 1.5 1.5 ns tSE Clock Enable Setup Time 1.5 1.5 ns tAVS Address Advance Setup Time 1.5 1.5 ns tDS Data Setup Time 2.0 2.0 ns tAH Address Hold Time 0.5 0.5 ns tHE Clock EnableHold Time 0.5 0.5 ns tWH Write Hold Time 0.5 0.5 ns tCEH Chip Enable Hold Time 0.5 0.5 ns tADVH Address Advance Hold Time 0.5 0.5 ns tDH Data Hold Time 0.5 0.5 ns tPDS ZZ High to Power Down 2 2 cyc tPUS ZZ Low to Power Down 2 2 cyc
Notes:
1. Configuration signal MODE is static and must not change during normal operation.
2. Guaranteed but not 100% tested. This parameter is periodically sampled.
3. Tested with load in Figure 2.
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PRELIMINARY INFORMATION Rev. 00E
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IS61NP25632 IS61NP25636 IS61NP51218
IS61NLP25632 IS61NLP25636 IS61NLP51218 ISSI
®
SLEEP MODE TIMING
Don't Care
Deselect or Read Only
Deselect or Read Only
t
RZZI
K
ZZ
Isupply
All Inputs (except ZZ)
Outputs (Q)
I
SB2
ZZ setup cycle ZZ recovery cycle
Normal
operation
cycle
t
PDS
t
PUS
t
ZZI
High-Z
SLEEP MODE ELECTRICAL CHARACTERISTICS
Symbol Parameter Conditions Min. Max. Unit
ISB2 Current during SLEEP MODE ZZ Vih 10 mA tPDS ZZ active to input ignored 2 cycle tPUS ZZ inactive to input sampled 2 cycle tZZI ZZ active to SLEEP current 2 cycle tRZZI ZZ inactive to exit SLEEP current 0 ns
14
Integrated Silicon Solution, Inc. 1-800-379-4774
PRELIMINARY INFORMATION Rev. 00E
04/26/01
IS61NP25632 IS61NP25636 IS61NP51218
IS61NLP25632 IS61NLP25636 IS61NLP51218 ISSI
®
READ CYCLE TIMING
t
DS
Clock
ADV
A17 - A0 or A18 - A0
WE
CKE
CE
OE
Data Out
A1
A2
A3
t
KH
t
KL
t
KC
Q3-3 Q3-4Q3-2Q3-1Q2-4Q2-3Q2-2Q2-1
Don't Care Undefined
NOTES: WE = L and BWX = L
CE = L means CE1 = L, CE2 = H and CE2 = L CE = H means CE1 = H, or CE1 = L and CE2 = H, or CE1 = L and CE2 = L
t
OEHZ
t
SE
t
HE
t
AS
t
AH
t
WS
t
WH
t
CES
t
CEH
t
ADVS
t
ADVH
t
KQHZ
t
KQ
t
OEQ
t
OEHZ
Q1-1
Integrated Silicon Solution, Inc. 1-800-379-4774
15
PRELIMINARY INFORMATION Rev. 00E
04/26/01
IS61NP25632 IS61NP25636 IS61NP51218
IS61NLP25632 IS61NLP25636 IS61NLP51218 ISSI
®
WRITE CYCLE TIMING
t
DS
t
DH
Clock
ADV
A17 - A0 or A18 - A0
WE
CKE
CE
OE
Data In
Data Out
A1
A2
A3
t
KH
t
KL
t
KC
t
SE
t
HE
D3-3 D3-4D3-2D3-1D2-4D2-3D2-2D2-1D1-1
Don't Care Undefined
NOTES: WE = L and BWX = L
CE = L means CE1 = L, CE2 = H and CE2 = L CE = H means CE1 = H, or CE1 = L and CE2 = H, or CE1 = L and CE2 = L
t
OEHZ
Q0-3 Q0-4
16
Integrated Silicon Solution, Inc. 1-800-379-4774
PRELIMINARY INFORMATION Rev. 00E
04/26/01
IS61NP25632 IS61NP25636 IS61NP51218
IS61NLP25632 IS61NLP25636 IS61NLP51218 ISSI
®
SINGLE READ/WRITE CYCLE TIMING
Clock
CKE
Address
WRITE
CS
ADV
OE
Data Out
Data In
D5
t
CEStCEH
tCHt
CL
t
CYC
Don't Care Undefined
NOTES: WRITE = L means WE = L and BWx = L
CS = L means CS
1
= L, CS2 = H and CS2 = L
CS = H means CS
1
= H, or CS1 = L and CS2 = H, or CS1 = L and CS2 = L
D2
t
LZOE
t
OE
A1 A2 A3 A4 A5 A6 A7 A8 A9
Q1 Q3 Q4 Q6 Q7
t
DS
t
DH
Integrated Silicon Solution, Inc. 1-800-379-4774
17
PRELIMINARY INFORMATION Rev. 00E
04/26/01
IS61NP25632 IS61NP25636 IS61NP51218
IS61NLP25632 IS61NLP25636 IS61NLP51218 ISSI
®
CKE OPERATION TIMING
A1 A2 A3 A4 A5 A6
Q1 Q3 Q4
Clock
CKE
Address
WRITE
CS
ADV
OE
Data Out
Data In
D2
t
CEStCEH
tCHt
CL
t
CYC
t
LZC
t
HZC
t
CD
t
DH
t
DS
Don't Care Undefined
NOTES: WRITE = L means WE = L and BWx = L
CS = L means CS
1
= L, CS2 = H and CS2 = L
CS = H means CS
1
= H, or CS1 = L and CS2 = H, or CS1 = L and CS2 = L
18
Integrated Silicon Solution, Inc. 1-800-379-4774
PRELIMINARY INFORMATION Rev. 00E
04/26/01
IS61NP25632 IS61NP25636 IS61NP51218
IS61NLP25632 IS61NLP25636 IS61NLP51218 ISSI
®
CS OPERATION TIMING
Don't Care Undefined
Clock
CKE
Address
WRITE
CS
ADV
OE
Data Out
Data In
t
CEStCEH
tCHt
CL
t
CYC
NOTES: WRITE = L means WE = L and BWx = L
CS = L means CS
1
= L, CS2 = H and CS2 = L
CS = H means CS
1
= H, or CS1 = L and CS2 = H, or CS1 = L and CS2 = L
D5
D2
t
DH
t
DS
t
LZOE
t
OE
Q1 Q2 Q4
t
HZC
t
LZC
t
CD
A1 A2 A3 A4 A5
Integrated Silicon Solution, Inc. 1-800-379-4774
19
PRELIMINARY INFORMATION Rev. 00E
04/26/01
IS61NP25632 IS61NP25636 IS61NP51218
IS61NLP25632 IS61NLP25636 IS61NLP51218 ISSI
®
ORDERING INFORMATION Commercial Range: 0°C to +70°C
Frequency Order Part Number Package
256Kx32
133 IS61NP25632-133TQ TQFP
IS61NP25632-133B PBGA
100 IS61NP25632-5TQ TQFP
IS61NP25632-5B PBGA
256Kx36
133 IS61NP25636-133TQ TQFP
IS61NP25636-133B PBGA
100 IS61NP25636-5TQ TQFP
IS61NP25636-5B PBGA
512Kx18
133 IS61NP51218-133TQ TQFP
IS61NP51218-133B PBGA
100 IS61NP51218-5TQ TQFP
IS61NP51218-5B PBGA
Industrial Range: -40°C to +85°C
Frequency Order Part Number Package
256Kx32
133 IS61NP25632-133TQI TQFP
IS61NP25632-133BI PBGA
100 IS61NP25632-5TQI TQFP
IS61NP25632-5BI PBGA
256Kx36
133 IS61NP25636-133TQI TQFP
IS61NP25636-133BI PBGA
100 IS61NP25636-5TQI TQFP
IS61NP25636-5BI PBGA
512Kx18
133 IS61NP51218-133TQI TQFP
IS61NP51218-133BI PBGA
100 IS61NP51218-5TQI TQFP
IS61NP51218-5BI PBGA
20
Integrated Silicon Solution, Inc. 1-800-379-4774
PRELIMINARY INFORMATION Rev. 00E
04/26/01
IS61NP25632 IS61NP25636 IS61NP51218
IS61NLP25632 IS61NLP25636 IS61NLP51218 ISSI
®
ORDERING INFORMATION Commercial Range: 0°C to +70°C
Frequency Order Part Number Package
256Kx32
133 IS61NLP25632-133TQ TQFP
IS61NLP25632-133B PBGA
100 IS61NLP25632-5TQ TQFP
IS61NLP25632-5B PBGA
256Kx36
133 IS61NLP25636-133TQ TQFP
IS61NLP25636-133B PBGA
100 IS61NLP25636-5TQ TQFP
IS61NLP25636-5B PBGA
512Kx18
133 IS61NLP51218-133TQ TQFP
IS61NLP51218-133B PBGA
100 IS61NLP51218-5TQ TQFP
IS61NLP51218-5B PBGA
ISSI
®
Integrated Silicon Solution, Inc.
2231 Lawson Lane
Santa Clara, CA 95054
Tel: 1-800-379-4774
Fax: (408) 588-0806
E-mail: sales@issi.com
www.issi.com
Industrial Range: -40°C to +85°C
Frequency Order Part Number Package
256Kx32
100 IS61NLP25632-5TQI TQFP
IS61NLP25632-5BI PBGA
256Kx36
100 IS61NLP25636-5TQI TQFP 100 IS61NLP25636-5BI PBGA
512Kx18
100 IS61NLP51218-5TQI TQFP 100 IS61NLP51218-5BI PBGA
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