Datasheet IS61LV3216L-20K, IS61LV3216L-15TI, IS61LV3216L-15KI, IS61LV3216L-10K, IS61LV3216L-20T Datasheet (ISSI)
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®
IS61LV3216L
32K x 16 LOW VOLTAGE CMOS STATIC RAM
FEATURES
• High-speed access time: 10, 12, 15, and 20 ns
• CMOS low power operation
— 130 mW (typical) operating
— 150 µW (typical) standby
• TTL compatible interface levels
• Single 3.3V + 10%, –5% power supply for 10
and 12 ns
• Single 3.3V ± 10% power supply for 15
and 20 ns
• Fully static operation: no clock or refresh
required
• Three state outputs
• Industrial temperature available
• Available in 44-pin 400-mil SOJ package and
44-pin TSOP (Type II)
DESCRIPTION
The ISSI IS61LV3216L is a high-speed, 512K static RAM
organized as 32,768 words by 16 bits. It is fabricated using
ISSI's high-performance CMOS technology. This highly reli-
able process coupled with innovative circuit design techniques, yields fast access times with low power consumption.
When CE is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down to
150 µW (typical) with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW Write
Enable (WE) controls both writing and reading of the memory.A
data byte allows Upper Byte (UB) and Lower Byte (LB) access.
The IS61LV3216L is packaged in the JEDEC standard 44-pin
400-mil SOJ and 44-pin TSOP (Type II).
ISSI
DECEMBER 2000
FUNCTIONAL BLOCK DIAGRAM
A0-A14
VCC
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
CE
OE
WE
UB
LB
DECODER
I/O
DATA
CIRCUIT
CONTROL
CIRCUIT
32K x 16
MEMORY ARRAY
COLUMN I/O
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774 1
Rev. A
12/19/00
IS61LV3216L
®
ISSI
PIN CONFIGURATIONS
44-Pin SOJ
NC
A14
A13
A12
A11
CE
I/O0
I/O1
I/O2
I/O3
Vcc
GND
I/O4
I/O5
I/O6
I/O7
WE
A10
A9
A8
A7
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A0
A1
A2
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
Vcc
I/O11
I/O10
I/O9
I/O8
NC
A3
A4
A5
A6
NC
44-Pin TSOP (TYPE II)
A9
A8
A7
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
NC
A14
A13
A12
A11
CE
I/O0
I/O1
I/O2
I/O3
Vcc
GND
I/O4
I/O5
I/O6
I/O7
WE
A10
NC
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A0
A1
A2
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
Vcc
I/O11
I/O10
I/O9
I/O8
NC
A3
A4
A5
A6
NC
PIN DESCRIPTIONS
A0-A14 Address Inputs
I/O0-I/O15 Data Inputs/Outputs
CE Chip Enable Input
OE Output Enable Input
WE Write Enable Input
LB Lower-byte Control (I/O0-I/O7)
UB Upper-byte Control (I/O8-I/O15)
NC No Connection
Vcc Power
GND Ground
TRUTH TABLE
I/O PIN
Mode WE CE OE L B UB I/O0-I/O7 I/O8-I/O15 Vcc Current
Not Selected X H X X X High-Z High-Z ISB1, ISB2
Output Disabled H L H X X High-Z High-Z ICC
X L X H H High-Z High-Z
Read H L L L H DOUT High-Z ICC
H L L H L High-Z DOUT
HLLLL DOUT DOUT
Write L L X L H DIN High-Z ICC
L L X H L High-Z DIN
LLXLL DIN DIN
2 Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
12/19/00
IS61LV3216L
®
ISSI
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCC Supply Voltage with Respect to GND –0.5 to +4.6 V
VTERM Terminal Voltage with Respect to GND –0.5 to Vcc + 0.5 V
TSTG Storage Temperature –65 to +150 °C
PT Power Dissipation 1.0 W
IOUT DC Output Current (LOW) 20 mA
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
OPERATING RANGE
Range Ambient Temperature VCC 10 ns, 12 ns VCC 15 ns, 20 ns
Commercial 0°C to + 70°C 3.3V +10%, –5% 3.3V ± 10%
Industrial –40°C to + 85°C 3.3V +10%, –5% 3.3V ± 10%
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
(1)
1
2
3
4
5
Symbol Parameter Test Conditions Min. Max. Unit
VOH Output HIGH Voltage VCC = Min., IOH = –4.0 mA 2.4 — V
VOL Output LOW Voltage VCC = Min., IOL = 8.0 mA — 0.4 V
VIH Input HIGH Voltage 2 VCC + 0.3 V
VIL Input LOW Voltage
ILI Input Leakage GND - VIN - VCC –1 1 µA
ILO Output Leakage GND - VOUT - VCC, Outputs Disabled –2 2 µA
Note:
IL (min.) = –3.0V for pulse width less than 10 ns.
1. V
POWER SUPPLY CHARACTERISTICS
Symbol Parameter Test Conditions Min. Max. Min. Max. Min. Max. Min. Max. Unit
ICC Vcc Dynamic Operating VCC = Max., Com. — 130 — 120 — 110 — 100 mA
Supply Current IOUT = 0 mA, f = fMAX Ind. — — — 130 — 120 — 110
ISB1 TTL Standby Current VCC = Max., Com. — 10 — 10 — 10 — 10 mA
(TTL Inputs) VIN = VIH or VIL Ind.—— —10 —10 —10
ISB2 CMOS Standby VCC = Max., Com.—1—1—1—1mA
Current (CMOS Inputs) CE • VCC – 0.2V, Ind. — — — 1 — 1 — 1
(1)
CE • VIH , f = 0
VIN • VCC – 0.2V, or
VIN - 0.2V, f = 0
(1)
(Over Operating Range)
-10 ns -12 ns -15 ns -20 ns
–0.3 0.8 V
6
7
8
9
10
11
12
Note:
1. At f = f
Integrated Silicon Solution, Inc. — 1-800-379-4774 3
Rev. A
12/19/00
MAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
IS61LV3216L
®
ISSI
CAPACITANCE
(1)
Symbol Parameter Conditions Max. Unit
CIN Input Capacitance VIN = 0V 6 pF
COUT Input/Output Capacitance VOUT = 0V 8 pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
-10 -12 -15 -20
Symbol Parameter Min. Max. Min. Max. Min. Max. Min. Max. Unit
tRC Read Cycle Time 10 — 12 — 15 — 20 — ns
tAA Address Access Time — 10 — 12 — 15 — 20 ns
tOHA Output Hold Time 3 — 3 — 3 — 3 — ns
tACE CE Access Time — 10 — 12 — 15 — 20 ns
tDOE OE Access Time — 5 — 6 — 7 — 8 ns
(2)
tHZOE
tLZOE
tHZCE
tLZCE
OE to High-Z Output 0 5 0 6 0 7 0 8 ns
(2)
OE to Low-Z Output 0 — 0 — 0 — 0 — ns
(2
CE to High-Z Output 0 5 0 6 0 7 0 8 ns
(2)
CE to Low-Z Output 3 — 3 — 3 — 3 — ns
tBA LB, UB Access Time — 5 — 6 — 7 — 8 ns
tHZB LB, UB to High-Z Output 0 5 0 6 0 7 0 8 ns
tLZB LB, UB to Low-Z Output 5 — 5 — 5 — 5 — ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of
0 to 3.0V and output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.
AC TEST CONDITIONS
Parameter Unit
Input Pulse Level 0V to 3.0V
Input Rise and Fall Times 3 ns
Input and Output Timing 1.5V
and Reference Level
Output Load See Figures 1a and 1b
AC TEST LOADS
3.3V
OUTPUT
30 pF
Including
jig and
scope
319 Ω
3.3V
OUTPUT
353 Ω
5 pF
Including
jig and
scope
319 Ω
353 Ω
Figure 1a. Figure 1b.
4 Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
12/19/00
IS61LV3216L
AC WAVEFORMS
®
ISSI
READ CYCLE NO. 1
ADDRESS
D
OUT
READ CYCLE NO. 2
ADDRESS
OE
(1,2)
(Address Controlled) (CE = OE = VIL, UB or LB = VIL)
t
RC
t
AA
t
OHA
PREVIOUS DATA VALID
(1,3)
t
AA
t
RC
DATA VALID
t
OHA
t
1
2
3
4
5
OHA
6
t
DOE
t
CE
t
LZCE
LB, UB
t
OUT
D
Notes:
1. WE is HIGH for a Read Cycle.
2. The device is continuously selected. OE, CE, UB, or LB = V
3. Address is valid prior to or coincident with CE LOW transition.
HIGH-Z
LZB
LZOE
t
ACE
t
BA
t
HZOE
7
t
HZCE
8
t
HZB
DATA VALID
9
IL.
10
11
12
Integrated Silicon Solution, Inc. — 1-800-379-4774 5
Rev. A
12/19/00
IS61LV3216L
®
ISSI
WRITE CYCLE SWITCHING CHARACTERISTICS
-10 -12 -15 -20
Symbol Parameter Min. Max. Min. Max. Min. Max. Min. Max. Unit
(1,3)
(Over Operating Range)
tWC Write Cycle Time 10 — 12 — 15 — 20 — ns
tSCE CE to Write End 8 — 9 — 10 — 12 — ns
tAW Address Setup Time 9 — 10 — 10 — 12 — ns
to Write End
tHA Address Hold from Write End 1 — 1 — 1 — 1 — ns
tSA Address Setup Time 0 — 0 — 0 — 0 — ns
tPWB LB, UB Valid to End of Write 9 — 10 — 11 — 12 — ns
tPWE WE Pulse Width 7 — 8 — 10 — 11 — ns
tSD Data Setup to Write End 5 — 6 — 7 — — 8 ns
tHD Data Hold from Write End 0 — 0 — 0 — 0 — ns
(2)
tHZWE
tLZWE
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse
levels of 0 to 3.0V and output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100%
tested.
3. The internal write time is defined by the overlap of CE LOW and UB or LB, and WE LOW. All signals must be
in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and
Hold timing are referenced to the rising or falling edge of the signal that terminates the write.
WE LOW to High-Z Output — 5 — 6 — 7 — 8 ns
(2)
WE HIGH to Low-Z Output 1 — 1 — 1 — 1 — ns
6 Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
12/19/00
IS61LV3216L
AC WAVEFORMS
®
ISSI
WRITE CYCLE NO. 1 (WE Controlled)
ADDRESS
CE
LB, UB
WE
t
SA
WRITE
(1)
(1,2)
t
AW
t
SCE
t
PWB
t
t
PWE
WC
t
1
2
HA
3
4
5
6
t
t
SD
D
IN
t
HZWE
D
OUT
Notes:
1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the CE and WE inputs and at least
one of the LB and UB inputs being in the LOW state.
2. WRITE = (CE)
[ (LB) = (UB) ] (WE).
UNDEFINED UNDEFINED
HD
t
LZWE
HIGH-ZHIGH-Z
7
8
9
10
11
12
Integrated Silicon Solution, Inc. — 1-800-379-4774 7
Rev. A
12/19/00
IS61LV3216L
®
ISSI
ORDERING INFORMATION
Commercial Range: 0°C to +70°C
Speed (ns) Order Part No. Package
10 IS61LV3216L-10T Plastic TSOP (Type II)
IS61LV3216L-10K 400-mil Plastic SOJ
12 IS61LV3216L-12T Plastic TSOP (Type II)
IS61LV3216L-12K 400-mil Plastic SOJ
15 IS61LV3216L-15T Plastic TSOP (Type II)
IS61LV3216L-15K 400-mil Plastic SOJ
20 IS61LV3216L-20T Plastic TSOP (Type II)
IS61LV3216L-20K 400-mil Plastic SOJ
ORDERING INFORMATION
Industrial Range: –40°C to +85°C
Speed (ns) Order Part No. Package
12 IS61LV3216L-12TI Plastic TSOP (Type II)
IS61LV3216L-12KI 400-mil Plastic SOJ
15 IS61LV3216L-15TI Plastic TSOP (Type II)
IS61LV3216L-15KI 400-mil Plastic SOJ
20 IS61LV3216L-20TI Plastic TSOP (Type II)
IS61LV3216L-20KI 400-mil Plastic SOJ
®
ISSI
Integrated Silicon Solution, Inc.
2231 Lawson Lane
Santa Clara, CA 95054
Tel: 1-800-379-4774
Fax: (408) 588-0806
E-mail: sales@issi.com
www.issi.com
8 Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
12/19/00
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