Datasheet IS61LV3216-20TI, IS61LV3216-20T, IS61LV3216-20K, IS61LV3216-15TI, IS61LV3216-15T Datasheet (ICSI)

IS61LV3216

IS61LV3216

32K x 16 LOW VOLTAGE CMOS STATIC RAM

FEATURES

• High-speed access time: 10, 12, 15, and 20 ns

• CMOS low power operation
— 150 mW (typical) operating
— 150 µW (typical) standby

• TTL compatible interface levels

• Single 3.3V ± 10% power supply

• Fully static operation: no clock or refresh
required

• Three state outputs

• Industrial temperature available

• Available in 44-pin 400mil SOJ package and
44-pin TSOP-2

FUNCTIONAL BLOCK DIAGRAM

DESCRIPTION

The ICSI IS61LV3216 is a high-speed, 512K static RAM
organized as 32,768 words by 16 bits. It is fabricated using

ICSI's high-performance CMOS technology. This highly reli-

able process coupled with innovative circuit design techniques,
yields fast access times with low power consumption.

When CE is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down with
CMOS input levels.

Easy memory expansion is provided by using Chip Enable and
Output Enable inputs, CE and OE. The active LOW Write
Enable (WE) controls both writing and reading of the memory.
A data byte allows Upper Byte (UB) and Lower Byte (LB)
access.

The IS61LV3216 is packaged in the JEDEC standard 44-pin
400mil SOJ and 44-pin 400mil TSOP-2.

1

2

3

4

5

6

A0-A14

VCC
GND

I/O0-I/O7

Lower Byte

I/O8-I/O15

Upper Byte

CE
OE

WE

UB

LB

DECODER

I/O

DATA

CIRCUIT

CONTROL

CIRCUIT

7

32K x 16

MEMORY ARRAY

8

9

COLUMN I/O

10

11

12

ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 1997, Integrated Silicon Solution Inc.

Integrated Circuit Solution Inc. 1

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IS61LV3216

PIN CONFIGURATIONS

44-Pin SOJ

44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23

A0
A1
A2
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
Vcc
I/O11
I/O10
I/O9
I/O8
NC
A3
A4
A5
A6
NC

NC
A14
A13
A12
A11

CE

I/O0
I/O1
I/O2
I/O3

Vcc

GND

I/O4
I/O5
I/O6
I/O7

WE

A10

A9
A8
A7

NC

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22

44-Pin TSOP-2

NC
A14
A13
A12
A11

CE

I/O0
I/O1
I/O2
I/O3

Vcc

GND

I/O4
I/O5
I/O6
I/O7

WE

A10

A9
A8
A7

NC

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22

44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23

A0
A1
A2
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
Vcc
I/O11
I/O10
I/O9
I/O8
NC
A3
A4
A5
A6
NC

PIN DESCRIPTIONS

A0-A14 Address Inputs

I/O0-I/O15 Data Inputs/Outputs

CE Chip Enable Input
OE Output Enable Input
WE Write Enable Input

LB Lower-byte Control (I/O0-I/O7)
UB Upper-byte Control (I/O8-I/O15)

NC No Connection

Vcc Power

GND Ground

TRUTH TABLE

I/O PIN

Mode

WEWE

WE

WEWE

Not Selected X H X X X High-Z High-Z ISB1, ISB2
Output Disabled H L H X X High-Z High-Z ICC

X L X H H High-Z High-Z

Read H L L L H DOUT High-Z ICC

H L L H L High-Z DOUT
HLLLL DOUT DOUT

Write L L X L H DIN High-Z ICC

L L X H L High-Z DIN
LLXLL DIN DIN

CECE

CE

CECE

OEOE

OE

OEOE

LBLB

LB

LBLB

UBUB

UB I/O0-I/O7 I/O8-I/O15 Vcc Current

UBUB

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IS61LV3216

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

VCC Supply Voltage with Respect to GND –0.5 to +4.6 V
VTERM Terminal Voltage with Respect to GND –0.5 to Vcc + 0.5 V
TSTG Storage Temperature –65 to +150 °C
PT Power Dissipation 1.0 W
IOUT DC Output Current (LOW) 20 mA

OPERATING RANGE

Range Ambient Temperature VCC

Commercial 0°C to +70°C 3.3V ± 10%

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol Parameter Test Conditions Min. Max. Unit

VOH Output HIGH Voltage VCC = Min., IOH = –4.0 mA 2.4 — V

VOL Output LOW Voltage VCC = Min., IOL = 8.0 mA — 0.4 V

(1)

Note:

1. Stress greater than those listed under
ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the
device. This is a stress rating only and
functional operation of the device at
these or any other conditions above
those indicated in the operational sec­tions of this specification is not implied.
Exposure to absolute maximum rat­ing conditions for extended periods
may affect reliability.

1

2

3

4

5

VIH Input HIGH Voltage 2.2 VCC + 0.3 V

VIL Input LOW Voltage

ILI Input Leakage GND ≤ VIN ≤ VCC –2 2 µA

ILO Output Leakage GND ≤ VOUT ≤ VCC, Outputs Disabled –2 2 µA

Notes:

1. VIL (min.) = –3.0V for pulse width less than 10 ns.

POWER SUPPLY CHARACTERISTICS

Symbol Parameter Test Conditions Min. Max. Min. Max. Min. Max. Min. Max. Unit

ICC Vcc Dynamic Operating VCC = Max., Com. — 220 — 200 — 180 — 160 mA

Supply Current IOUT = 0 mA, f = fMAX Ind. — — — 230 — 200 — 180

ISB1 TTL Standby Current VCC = Max., Com. — 10 — 10 — 10 — 10 mA

(TTL Inputs) VIN = VIH or VIL Ind. — — — 20 — 20 — 20

ISB2 CMOS Standby VCC = Max., Com. — 5 — 5 — 5 — 5 mA

Current (CMOS Inputs) CE ≥ VCC – 0.2V, Ind. — — — 10 — 10 — 10

Note:

1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

(1)

CE ≥ VIH , f = 0

VIN ≥ VCC – 0.2V, or
VIN ≤ 0.2V, f = 0

(1)

(Over Operating Range)

-10 ns -12 ns -15 ns -20 ns

–0.3 0.8 V

6

7

8

9

10

11

12

Integrated Circuit Solution Inc. 3

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IS61LV3216

CAPACITANCE

(1)

Symbol Parameter Conditions Max. Unit

CIN Input Capacitance VIN = 0V 6 pF

COUT Input/Output Capacitance VOUT = 0V 8 pF

Note:

1. Tested initially and after any design or process changes that may affect these parameters.

READ CYCLE SWITCHING CHARACTERISTICS

(1)

(Over Operating Range)

-10 -12 -15 -20

Symbol Parameter Min. Max. Min. Max. Min. Max. Min. Max. Unit

tRC Read Cycle Time 10 — 12 — 15 — 20 — ns

tAA Address Access Time — 10 — 12 — 15 — 20 ns

tOHA Output Hold Time 3 — 3 — 3 — 3 — ns
tACE CE Access Time — 10 — 12 — 15 — 20 ns
tDOE OE Access Time — 5 — 6 — 7 — 8 ns

(2)

tHZOE

tLZOE

tHZCE

tLZCE

OE to High-Z Output 0 5 0 6 0 7 0 8 ns

(2)

OE to Low-Z Output 0 — 0 — 0 — 0 — ns

(2

CE to High-Z Output 0 5 0 6 0 7 0 8 ns

(2)

CE to Low-Z Output 4 — 4 — 4 — 4 — ns

tBA LB, UB Access Time — 5 — 6 — 7 — 8 ns
tHZB LB, UB to High-Z Output 0 5 0 6 0 7 0 8 ns
tLZB LB, UB to Low-Z Output 5 — 5 — 5 — 5 — ns

Notes:

1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of
0 to 3.0V and output loading specified in Figure 1a.

2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.

3. Not 100% tested.

AC TEST CONDITIONS

Parameter Unit

Input Pulse Level 0V to 3.0V
Input Rise and Fall Times 3 ns
Input and Output Timing 1.5V

and Reference Level
Output Load See Figures 1a and 1b

30 pF

Including

jig and

scope

480 Ω

255 Ω

5V

OUTPUT

5 pF

Including

jig and

scope

480 Ω

255 Ω

AC TEST LOADS

5V

OUTPUT

Figure 1a. Figure 1b.

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IS61LV3216

AC WAVEFORMS

READ CYCLE NO. 1

ADDRESS

D

OUT

READ CYCLE NO. 2

ADDRESS

OE

(1,2)

(Address Controlled) (CE = OE = VIL, UB or LB = VIL)

t

RC

t

AA

t

OHA

PREVIOUS DATA VALID

(1,3)

t

RC

t

AA

DATA VALID

t

OHA

t

OHA

1

2

3

4

5

6

t

DOE

t

CE

t

LZCE

LB, UB

t

OUT

D

Notes:

1. WE is HIGH for a Read Cycle.

2. The device is continuously selected. OE, CE, UB, or LB = V

3. Address is valid prior to or coincident with CE LOW transition.

HIGH-Z

LZB

LZOE

t

ACE

t

BA

t

HZOE

7

t

HZCE

8

t

HZB

DATA VALID

9

IL.

10

11

12

Integrated Circuit Solution Inc. 5

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IS61LV3216

WRITE CYCLE SWITCHING CHARACTERISTICS

(1,3)

(Over Operating Range)

-10 -12 -15 -20

Symbol Parameter Min. Max. Min. Max. Min. Max. Min. Max. Unit

tWC Write Cycle Time 10 — 12 — 15 — 20 — ns
tSCE CE to Write End 9 — 10 — 11 — 12 — ns

tAW Address Setup Time 9 — 10 — 11 — 12 — ns

to Write End

tHA Address Hold from Write End 0 — 0 — 0 — 0 — ns

tSA Address Setup Time 0 — 0 — 0 — 0 — ns
tPWB LB, UB Valid to End of Write 9 — 10 — 11 — 12 — ns
tPWE WE Pulse Width 7 — 8 — 10 — 11 — ns

tSD Data Setup to Write End 5 — 6 — 7 — — 8 ns

tHD Data Hold from Write End 0 — 0 — 0 — 0 — ns

(2)

tHZWE

tLZWE

Notes:

1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V
and output loading specified in Figure 1a.

2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.

3. The internal write time is defined by the overlap of CE LOW and UB or LB, and WE LOW. All signals must be in valid states to
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the
rising or falling edge of the signal that terminates the write.

WE LOW to High-Z Output — 5 — 6 — 7 — 8 ns

(2)

WE HIGH to Low-Z Output 1 — 1 — 1 — 1 — ns

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IS61LV3216

AC WAVEFORMS

WRITE CYCLE NO. 1 (

ADDRESS

CE

LB, UB

WE

WRITE

(1)

WEWE

WE Controlled)

WEWE

t

SA

(1,2)

t

AW

t

SCE

t

PWB

t

t

PWE

WC

t

1

2

HA

3

4

5

6

t

t

SD

D

IN

t

HZWE

D

OUT

Notes:

1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the CE and WE inputs and at least
one of the LB and UB inputs being in the LOW state.

2. WRITE = (CE)

[ (LB) = (UB) ] (WE).

UNDEFINED UNDEFINED

HD

t

LZWE

HIGH-ZHIGH-Z

7

8

9

10

11

12

Integrated Circuit Solution Inc. 7

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IS61LV3216

ORDERING INFORMATION
Commercial Range: 0°C to +70°C

Speed (ns) Order Part No. Package

10 IS61LV3216-10T 400mil TSOP-2
10 IS61LV3216-10K 400mil SOJ

12 IS61LV3216-12T 400mil TSOP-2
12 IS61LV3216-12K 400mil SOJ

15 IS61LV3216-15T 400mil TSOP-2
15 IS61LV3216-15K 400mil SOJ

20 IS61LV3216-20T 400mil TSOP-2
20 IS61LV3216-20K 400mil SOJ

ORDERING INFORMATION
Industrial Range: –40°C to +85°C

Speed (ns) Order Part No. Package

12 IS61LV3216-12TI 400mil TSOP-2
12 IS61LV3216-12KI 400mil SOJ

15 IS61LV3216-15TI 400mil TSOP-2
15 IS61LV3216-15KI 400mil SOJ

20 IS61LV3216-20TI 400mil TSOP-2
20 IS61LV3216-20KI 400mil SOJ

Integrated Circuit Solution Inc.

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http://www.icsi.com.tw

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